JPS5929053U - semiconductor equipment - Google Patents
semiconductor equipmentInfo
- Publication number
- JPS5929053U JPS5929053U JP12476582U JP12476582U JPS5929053U JP S5929053 U JPS5929053 U JP S5929053U JP 12476582 U JP12476582 U JP 12476582U JP 12476582 U JP12476582 U JP 12476582U JP S5929053 U JPS5929053 U JP S5929053U
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- constructed
- layers
- semiconductor equipment
- well region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図ａおよびｂは本考案の実施例の平面説明図、およ
び断面設面図をそれぞれ示す。
１、 １’、 ９． ９’・・・・・・２層の多結晶
シリコン単位抵抗体、２．５・・・・・・引出し導体、
３．６・・・・・・コンタクト、４・・・・・・ウェル
抵抗体、７・・・・・・厚い酸化膜、８・・・・・・シ
リコン基板、１０・・・・・・拡散層、１１・・・・・
・相互接続導体、１２・・・・・・相互接続導体および
引出し導体。Figures 1a and 1b show an explanatory plan view and a sectional view of an embodiment of the present invention, respectively. 1, 1', 9. 9'...Two-layer polycrystalline silicon unit resistor, 2.5... Output conductor,
3.6... Contact, 4... Well resistor, 7... Thick oxide film, 8... Silicon substrate, 10... Diffusion layer, 11...
- Interconnection conductor, 12...Interconnection conductor and extraction conductor.
Claims (1)
領域を抵抗体となし、前記ウェル領域上に厚い酸化膜を
形成し、前記厚い酸化膜上に、少なくとも２種類以上の
単位抵抗体を２層の多結晶シリコンを用いて構成し、２
層の多結晶シリコン単位抵抗体を導体を用いて相互接続
することにより、抵抗群を構成したことを特徴とする半
導体装置。A well region formed by impurities of conductivity type opposite to that of the silicon substrate is used as a resistor, a thick oxide film is formed on the well region, and at least two or more types of unit resistors are formed in two layers on the thick oxide film. Constructed using polycrystalline silicon, 2
1. A semiconductor device characterized in that a resistor group is constructed by interconnecting polycrystalline silicon unit resistors in layers using a conductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12476582U JPS5929053U (en) | 1982-08-18 | 1982-08-18 | semiconductor equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12476582U JPS5929053U (en) | 1982-08-18 | 1982-08-18 | semiconductor equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5929053U true JPS5929053U (en) | 1984-02-23 |
Family
ID=30284292
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12476582U Pending JPS5929053U (en) | 1982-08-18 | 1982-08-18 | semiconductor equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5929053U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5655915A (en) * | 1979-10-12 | 1981-05-16 | Asahi Optical Co Ltd | Zoom lens |
-
1982
- 1982-08-18 JP JP12476582U patent/JPS5929053U/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5655915A (en) * | 1979-10-12 | 1981-05-16 | Asahi Optical Co Ltd | Zoom lens |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS58446U (en) | Hybrid integrated circuit device | |
| JPS5929053U (en) | semiconductor equipment | |
| JPS5929054U (en) | semiconductor equipment | |
| JPS592159U (en) | transistor device | |
| JPS60942U (en) | semiconductor equipment | |
| JPS5812949U (en) | Multilayer wiring structure of semiconductor integrated circuits | |
| JPS58444U (en) | Multilayer wiring structure of semiconductor devices | |
| JPS5846460U (en) | Hybrid integrated circuit device | |
| JPS6115755U (en) | Semiconductor device with built-in resistor | |
| JPS64348U (en) | ||
| JPS58182443U (en) | semiconductor equipment | |
| JPS602828U (en) | Semiconductor integrated circuit device | |
| JPS592160U (en) | Connection structure of semiconductor devices | |
| JPS60149136U (en) | integrated circuit elements | |
| JPS58159757U (en) | semiconductor equipment | |
| JPS60144255U (en) | transistor | |
| JPS60125751U (en) | semiconductor switching device | |
| JPS5866655U (en) | semiconductor resistance chip | |
| JPS6127255U (en) | Semiconductor device with markings on bonding pad | |
| JPS60136155U (en) | semiconductor equipment | |
| JPS60109354U (en) | Hybrid integrated circuit device | |
| JPS60137450U (en) | semiconductor resistance device | |
| JPS6057133U (en) | Wiring structure of semiconductor integrated circuit | |
| JPS60125749U (en) | semiconductor switching device | |
| JPS5853160U (en) | Amorphous semiconductor device |