JPS5923875A - ドライエツチング方法 - Google Patents
ドライエツチング方法Info
- Publication number
- JPS5923875A JPS5923875A JP13412482A JP13412482A JPS5923875A JP S5923875 A JPS5923875 A JP S5923875A JP 13412482 A JP13412482 A JP 13412482A JP 13412482 A JP13412482 A JP 13412482A JP S5923875 A JPS5923875 A JP S5923875A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- silicon
- sif4
- dry
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001312 dry etching Methods 0.000 title claims abstract description 10
- 238000000034 method Methods 0.000 title claims description 17
- 229910004014 SiF4 Inorganic materials 0.000 claims abstract description 9
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000005530 etching Methods 0.000 abstract description 32
- 238000011109 contamination Methods 0.000 abstract description 12
- 239000000758 substrate Substances 0.000 abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- 238000009832 plasma treatment Methods 0.000 abstract description 5
- 238000011282 treatment Methods 0.000 abstract description 5
- 229910052681 coesite Inorganic materials 0.000 abstract description 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 4
- 238000001020 plasma etching Methods 0.000 abstract description 4
- 229910052682 stishovite Inorganic materials 0.000 abstract description 4
- 229910052905 tridymite Inorganic materials 0.000 abstract description 4
- 238000004140 cleaning Methods 0.000 abstract description 3
- 229920000642 polymer Polymers 0.000 abstract description 2
- 239000008246 gaseous mixture Substances 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 239000007789 gas Substances 0.000 description 11
- 238000005108 dry cleaning Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 239000002210 silicon-based material Substances 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- BJSDNVVWJYDOLK-UHFFFAOYSA-N 2-[1-[(4-chlorophenyl)-oxomethyl]-5-methoxy-2-methyl-3-indolyl]-1-(4-morpholinyl)ethanone Chemical compound CC1=C(CC(=O)N2CCOCC2)C2=CC(OC)=CC=C2N1C(=O)C1=CC=C(Cl)C=C1 BJSDNVVWJYDOLK-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241001580033 Imma Species 0.000 description 1
- 235000014548 Rubus moluccanus Nutrition 0.000 description 1
- 229910005091 Si3N Inorganic materials 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- UUZZMWZGAZGXSF-UHFFFAOYSA-N peroxynitric acid Chemical compound OON(=O)=O UUZZMWZGAZGXSF-UHFFFAOYSA-N 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13412482A JPS5923875A (ja) | 1982-07-30 | 1982-07-30 | ドライエツチング方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13412482A JPS5923875A (ja) | 1982-07-30 | 1982-07-30 | ドライエツチング方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5923875A true JPS5923875A (ja) | 1984-02-07 |
JPS6231071B2 JPS6231071B2 (enrdf_load_stackoverflow) | 1987-07-06 |
Family
ID=15121020
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13412482A Granted JPS5923875A (ja) | 1982-07-30 | 1982-07-30 | ドライエツチング方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5923875A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS639121A (ja) * | 1986-06-30 | 1988-01-14 | Toshiba Corp | ドライエツチング方法 |
EP1619269A3 (en) * | 2004-07-23 | 2006-11-08 | Air Products And Chemicals, Inc. | Method for enhancing fluorine utilization |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63183077U (enrdf_load_stackoverflow) * | 1987-05-19 | 1988-11-25 | ||
JPH01257439A (ja) * | 1987-07-17 | 1989-10-13 | Nippon Flour Mills Co Ltd | パスタ類、麺類の調理方法および調理用耐熱容器、包装麺類 |
JPH0162723U (enrdf_load_stackoverflow) * | 1987-10-14 | 1989-04-21 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5565364A (en) * | 1978-11-08 | 1980-05-16 | Toshiba Corp | Etching method |
JPS56144543A (en) * | 1980-03-17 | 1981-11-10 | Ibm | Method of manufacturing semiconductor device |
-
1982
- 1982-07-30 JP JP13412482A patent/JPS5923875A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5565364A (en) * | 1978-11-08 | 1980-05-16 | Toshiba Corp | Etching method |
JPS56144543A (en) * | 1980-03-17 | 1981-11-10 | Ibm | Method of manufacturing semiconductor device |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS639121A (ja) * | 1986-06-30 | 1988-01-14 | Toshiba Corp | ドライエツチング方法 |
EP1619269A3 (en) * | 2004-07-23 | 2006-11-08 | Air Products And Chemicals, Inc. | Method for enhancing fluorine utilization |
KR100760891B1 (ko) | 2004-07-23 | 2007-09-27 | 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 | 불소 이용 강화를 위한 방법 |
Also Published As
Publication number | Publication date |
---|---|
JPS6231071B2 (enrdf_load_stackoverflow) | 1987-07-06 |
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