JPS59232439A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS59232439A JPS59232439A JP58107150A JP10715083A JPS59232439A JP S59232439 A JPS59232439 A JP S59232439A JP 58107150 A JP58107150 A JP 58107150A JP 10715083 A JP10715083 A JP 10715083A JP S59232439 A JPS59232439 A JP S59232439A
- Authority
- JP
- Japan
- Prior art keywords
- film
- groove
- region
- layer
- shaped groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H10W10/041—
-
- H10W10/40—
Landscapes
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58107150A JPS59232439A (ja) | 1983-06-15 | 1983-06-15 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58107150A JPS59232439A (ja) | 1983-06-15 | 1983-06-15 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59232439A true JPS59232439A (ja) | 1984-12-27 |
| JPH0464182B2 JPH0464182B2 (Direct) | 1992-10-14 |
Family
ID=14451771
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58107150A Granted JPS59232439A (ja) | 1983-06-15 | 1983-06-15 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59232439A (Direct) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6406982B2 (en) * | 2000-06-05 | 2002-06-18 | Denso Corporation | Method of improving epitaxially-filled trench by smoothing trench prior to filling |
| US7968970B2 (en) | 2008-05-14 | 2011-06-28 | Renesas Electronics Corporation | Semiconductor device, method for manufacturing semiconductor device, and power amplifier element |
-
1983
- 1983-06-15 JP JP58107150A patent/JPS59232439A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6406982B2 (en) * | 2000-06-05 | 2002-06-18 | Denso Corporation | Method of improving epitaxially-filled trench by smoothing trench prior to filling |
| US7063751B2 (en) | 2000-06-05 | 2006-06-20 | Denso Corporation | Semiconductor substrate formed by epitaxially filling a trench in a semiconductor substrate with a semiconductor material after smoothing the surface and rounding the corners |
| US7968970B2 (en) | 2008-05-14 | 2011-06-28 | Renesas Electronics Corporation | Semiconductor device, method for manufacturing semiconductor device, and power amplifier element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0464182B2 (Direct) | 1992-10-14 |
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