JPS59232418A - 微細パタ−ン形成法 - Google Patents

微細パタ−ン形成法

Info

Publication number
JPS59232418A
JPS59232418A JP58107580A JP10758083A JPS59232418A JP S59232418 A JPS59232418 A JP S59232418A JP 58107580 A JP58107580 A JP 58107580A JP 10758083 A JP10758083 A JP 10758083A JP S59232418 A JPS59232418 A JP S59232418A
Authority
JP
Japan
Prior art keywords
pattern
exposure
fine pattern
resist
formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58107580A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0462166B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Keiichi Fukuda
啓一 福田
Yutaka Sumino
裕 角野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP58107580A priority Critical patent/JPS59232418A/ja
Publication of JPS59232418A publication Critical patent/JPS59232418A/ja
Publication of JPH0462166B2 publication Critical patent/JPH0462166B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP58107580A 1983-06-15 1983-06-15 微細パタ−ン形成法 Granted JPS59232418A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58107580A JPS59232418A (ja) 1983-06-15 1983-06-15 微細パタ−ン形成法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58107580A JPS59232418A (ja) 1983-06-15 1983-06-15 微細パタ−ン形成法

Publications (2)

Publication Number Publication Date
JPS59232418A true JPS59232418A (ja) 1984-12-27
JPH0462166B2 JPH0462166B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-10-05

Family

ID=14462766

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58107580A Granted JPS59232418A (ja) 1983-06-15 1983-06-15 微細パタ−ン形成法

Country Status (1)

Country Link
JP (1) JPS59232418A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62279628A (ja) * 1986-05-28 1987-12-04 Hitachi Ltd 樹脂膜の形成方法
JP2005149832A (ja) * 2003-11-13 2005-06-09 Toray Ind Inc プラズマディスプレイ用部材の製造方法およびプラズマディスプレイ

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4833908A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1971-09-01 1973-05-15
JPS501805A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-05-14 1975-01-09
JPS5168772A (en) * 1974-12-11 1976-06-14 Matsushita Electronics Corp Handotaisochino seizohoho

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4833908A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1971-09-01 1973-05-15
JPS501805A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-05-14 1975-01-09
JPS5168772A (en) * 1974-12-11 1976-06-14 Matsushita Electronics Corp Handotaisochino seizohoho

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62279628A (ja) * 1986-05-28 1987-12-04 Hitachi Ltd 樹脂膜の形成方法
JP2005149832A (ja) * 2003-11-13 2005-06-09 Toray Ind Inc プラズマディスプレイ用部材の製造方法およびプラズマディスプレイ

Also Published As

Publication number Publication date
JPH0462166B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-10-05

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