JPS59229480A - スパツタリング装置 - Google Patents

スパツタリング装置

Info

Publication number
JPS59229480A
JPS59229480A JP10275783A JP10275783A JPS59229480A JP S59229480 A JPS59229480 A JP S59229480A JP 10275783 A JP10275783 A JP 10275783A JP 10275783 A JP10275783 A JP 10275783A JP S59229480 A JPS59229480 A JP S59229480A
Authority
JP
Japan
Prior art keywords
target
electrode
substrate
film
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10275783A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6361387B2 (enrdf_load_stackoverflow
Inventor
Tadashi Serikawa
正 芹川
Akio Okamoto
章雄 岡本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP10275783A priority Critical patent/JPS59229480A/ja
Publication of JPS59229480A publication Critical patent/JPS59229480A/ja
Publication of JPS6361387B2 publication Critical patent/JPS6361387B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/225—Oblique incidence of vaporised material on substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP10275783A 1983-06-10 1983-06-10 スパツタリング装置 Granted JPS59229480A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10275783A JPS59229480A (ja) 1983-06-10 1983-06-10 スパツタリング装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10275783A JPS59229480A (ja) 1983-06-10 1983-06-10 スパツタリング装置

Publications (2)

Publication Number Publication Date
JPS59229480A true JPS59229480A (ja) 1984-12-22
JPS6361387B2 JPS6361387B2 (enrdf_load_stackoverflow) 1988-11-29

Family

ID=14336072

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10275783A Granted JPS59229480A (ja) 1983-06-10 1983-06-10 スパツタリング装置

Country Status (1)

Country Link
JP (1) JPS59229480A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05287524A (ja) * 1992-04-09 1993-11-02 Anelva Corp マグネトロンスパッタリング用ターゲット
JPH0616461U (ja) * 1992-01-29 1994-03-04 ライボルト アクチエンゲゼルシヤフト カソードスパッタリング装置用ターゲット
US5919345A (en) * 1994-09-27 1999-07-06 Applied Materials, Inc. Uniform film thickness deposition of sputtered materials
JP2001064770A (ja) * 1999-06-24 2001-03-13 Ulvac Japan Ltd スパッタリング装置
SG85732A1 (en) * 1999-10-28 2002-01-15 Applied Komatsu Technology Inc Tilted sputtering target with shield to block contaminants
JP2011061063A (ja) * 2009-09-11 2011-03-24 Sharp Corp アルミニウム含有窒化物中間層の製造方法、窒化物層の製造方法および窒化物半導体素子の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5776185A (en) * 1980-10-30 1982-05-13 Ulvac Corp Sputtering device
JPS57141930A (en) * 1981-02-27 1982-09-02 Hitachi Ltd Device for formation of thin film

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5776185A (en) * 1980-10-30 1982-05-13 Ulvac Corp Sputtering device
JPS57141930A (en) * 1981-02-27 1982-09-02 Hitachi Ltd Device for formation of thin film

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0616461U (ja) * 1992-01-29 1994-03-04 ライボルト アクチエンゲゼルシヤフト カソードスパッタリング装置用ターゲット
JPH05287524A (ja) * 1992-04-09 1993-11-02 Anelva Corp マグネトロンスパッタリング用ターゲット
US5919345A (en) * 1994-09-27 1999-07-06 Applied Materials, Inc. Uniform film thickness deposition of sputtered materials
JP2001064770A (ja) * 1999-06-24 2001-03-13 Ulvac Japan Ltd スパッタリング装置
SG85732A1 (en) * 1999-10-28 2002-01-15 Applied Komatsu Technology Inc Tilted sputtering target with shield to block contaminants
JP2011061063A (ja) * 2009-09-11 2011-03-24 Sharp Corp アルミニウム含有窒化物中間層の製造方法、窒化物層の製造方法および窒化物半導体素子の製造方法

Also Published As

Publication number Publication date
JPS6361387B2 (enrdf_load_stackoverflow) 1988-11-29

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