JPS59224122A - 化合物半導体のｐ型層の形成方法 - Google Patents

化合物半導体のｐ型層の形成方法

Info

Publication number
JPS59224122A
JPS59224122A JP58097955A JP9795583A JPS59224122A JP S59224122 A JPS59224122 A JP S59224122A JP 58097955 A JP58097955 A JP 58097955A JP 9795583 A JP9795583 A JP 9795583A JP S59224122 A JPS59224122 A JP S59224122A
Authority
JP
Japan
Prior art keywords
temperature
ions
substrate crystal
compound semiconductor
annealing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58097955A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6364049B2 (enExample
Inventor
Sumio Sugata
菅田　純雄
Masato Nakajima
真人 中島
Noriaki Tsukada
塚田　紀昭
Akira Mita
三田　陽
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP58097955A priority Critical patent/JPS59224122A/ja
Publication of JPS59224122A publication Critical patent/JPS59224122A/ja
Publication of JPS6364049B2 publication Critical patent/JPS6364049B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping

Landscapes

  • Bipolar Transistors (AREA)
JP58097955A 1983-06-03 1983-06-03 化合物半導体のｐ型層の形成方法 Granted JPS59224122A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58097955A JPS59224122A (ja) 1983-06-03 1983-06-03 化合物半導体のｐ型層の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58097955A JPS59224122A (ja) 1983-06-03 1983-06-03 化合物半導体のｐ型層の形成方法

Publications (2)

Publication Number Publication Date
JPS59224122A true JPS59224122A (ja) 1984-12-17
JPS6364049B2 JPS6364049B2 (enExample) 1988-12-09

Family

ID=14206085

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58097955A Granted JPS59224122A (ja) 1983-06-03 1983-06-03 化合物半導体のｐ型層の形成方法

Country Status (1)

Country Link
JP (1) JPS59224122A (enExample)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4953375A (enExample) * 1972-09-25 1974-05-23

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4953375A (enExample) * 1972-09-25 1974-05-23

Also Published As

Publication number Publication date
JPS6364049B2 (enExample) 1988-12-09

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