JPS59223291A - 単結晶の製造方法 - Google Patents

単結晶の製造方法

Info

Publication number
JPS59223291A
JPS59223291A JP9482683A JP9482683A JPS59223291A JP S59223291 A JPS59223291 A JP S59223291A JP 9482683 A JP9482683 A JP 9482683A JP 9482683 A JP9482683 A JP 9482683A JP S59223291 A JPS59223291 A JP S59223291A
Authority
JP
Japan
Prior art keywords
crystal
melt
crucible
raw material
gap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9482683A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6346038B2 (enrdf_load_stackoverflow
Inventor
Takashi Fujii
高志 藤井
Jisaburo Ushizawa
牛沢　次三郎
Masayuki Watanabe
正幸 渡辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP9482683A priority Critical patent/JPS59223291A/ja
Publication of JPS59223291A publication Critical patent/JPS59223291A/ja
Publication of JPS6346038B2 publication Critical patent/JPS6346038B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP9482683A 1983-05-31 1983-05-31 単結晶の製造方法 Granted JPS59223291A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9482683A JPS59223291A (ja) 1983-05-31 1983-05-31 単結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9482683A JPS59223291A (ja) 1983-05-31 1983-05-31 単結晶の製造方法

Publications (2)

Publication Number Publication Date
JPS59223291A true JPS59223291A (ja) 1984-12-15
JPS6346038B2 JPS6346038B2 (enrdf_load_stackoverflow) 1988-09-13

Family

ID=14120853

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9482683A Granted JPS59223291A (ja) 1983-05-31 1983-05-31 単結晶の製造方法

Country Status (1)

Country Link
JP (1) JPS59223291A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62119197A (ja) * 1985-11-15 1987-05-30 Sumitomo Electric Ind Ltd 単結晶の製造方法
JPH03183689A (ja) * 1989-12-11 1991-08-09 Mitsubishi Materials Corp 単結晶引上装置および引上方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5435898A (en) * 1977-08-26 1979-03-16 Agency Of Ind Science & Technol Growing method for rare earth element gallium garnet single crystal

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5435898A (en) * 1977-08-26 1979-03-16 Agency Of Ind Science & Technol Growing method for rare earth element gallium garnet single crystal

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62119197A (ja) * 1985-11-15 1987-05-30 Sumitomo Electric Ind Ltd 単結晶の製造方法
JPH03183689A (ja) * 1989-12-11 1991-08-09 Mitsubishi Materials Corp 単結晶引上装置および引上方法

Also Published As

Publication number Publication date
JPS6346038B2 (enrdf_load_stackoverflow) 1988-09-13

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