JPS5921091B2 - Method for manufacturing magnetic recording media - Google Patents

Method for manufacturing magnetic recording media

Info

Publication number
JPS5921091B2
JPS5921091B2 JP7055276A JP7055276A JPS5921091B2 JP S5921091 B2 JPS5921091 B2 JP S5921091B2 JP 7055276 A JP7055276 A JP 7055276A JP 7055276 A JP7055276 A JP 7055276A JP S5921091 B2 JPS5921091 B2 JP S5921091B2
Authority
JP
Japan
Prior art keywords
substrate
evaporation source
film
magnetic recording
recording media
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP7055276A
Other languages
Japanese (ja)
Other versions
JPS52153411A (en
Inventor
紘一 篠原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP7055276A priority Critical patent/JPS5921091B2/en
Publication of JPS52153411A publication Critical patent/JPS52153411A/en
Publication of JPS5921091B2 publication Critical patent/JPS5921091B2/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation

Description

【発明の詳細な説明】 本発明は、真空内被膜形成法の改良に係り、磁性材料か
らなる被膜を高分子成形物からなるフィルム等の基板上
に得る方法に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improved method for forming a film in vacuum, and relates to a method for obtaining a film made of a magnetic material on a substrate such as a film made of a polymer molded product.

従来、磁性材料の蒸着においてみられる一軸異方性を工
業規模において利用する上での障害は、形状異方性を得
る上で斜め蒸着が必要であり、このために蒸発源よりー
般に2πラジアンに放射される蒸気流を限定して、ごく
一部の成分により被膜を形成する必要がある。
Conventionally, an obstacle to utilizing the uniaxial anisotropy observed in the evaporation of magnetic materials on an industrial scale is that oblique evaporation is necessary to obtain shape anisotropy. It is necessary to limit the vapor flow radiated to radians and form a film with only a small portion of the components.

そのため、生産速度が小さく、未だに実用に至つていな
い。本発明は、このような欠点を排除して、高速で斜め
蒸着効果を達成する方法の提供を目的とするもので、公
知の蒸発源と基板を真空容器内に対向して配設し、基板
と蒸発源の間に少なくとも1ケ以上の蒸気の反射板を配
設して蒸着を行うことによりその目的を達成するもので
ある。
Therefore, the production rate is low, and it has not yet been put into practical use. The present invention aims to eliminate such drawbacks and provide a method for achieving an oblique evaporation effect at high speed. This objective is achieved by arranging at least one vapor reflection plate between the vapor source and the evaporation source.

以下本発明を実施するために使用する装置の構成例を図
面に示し、それについて説明すると、まず真空容器1内
に磁性材料よりなる蒸発源2と基板として高分子成形物
からなるフィルム3を対向して配設する。
An example of the configuration of the apparatus used to carry out the present invention is shown in the drawings below, and will be explained. First, an evaporation source 2 made of a magnetic material and a film 3 made of a polymer molded product as a substrate are placed facing each other in a vacuum container 1. and arrange it.

基板フィルム3は必ずしも高分子成形物である必要はな
いが、多くの場合、送り出しロール4と巻き取りロール
5とを基本とした搬送系で連続して搬送されるものにお
いて、本発明の効果はより顕著である。6は防着板で、
通常水冷管Tまたは冷媒等により冷却される場合が多い
The substrate film 3 does not necessarily have to be a polymer molded product, but in many cases, the effects of the present invention are effective when the substrate film 3 is continuously transported using a transport system based on a delivery roll 4 and a take-up roll 5. more noticeable. 6 is an anti-adhesion plate,
Usually, it is often cooled by a water cooling pipe T or a refrigerant.

必ずしも必要条件ではないが、本発明においては特に高
分子成形物等の低融点材料への熱影響を軽減するために
幾何学的配置において工夫するかいずれかを必要とする
。そして本発明の特長点は、図において示される反射板
8、9で、この反射板8、9の基本的作用は蒸発源2よ
りの蒸気流の一部を反射して、基板フィルム3へ向わせ
るもので、その数および配置関係等により蒸発源2の虚
像が基板フィルム3に対して斜め成分を多く有する、い
わゆる斜め蒸着と同等の作用を発揮させるものである。
この基本的作用をさせるために、例えば反射板8、9は
タンタルまたはタングステン等の高融点金属板で構成さ
れかつ高温に保持される。高温に保持するには、輻射熱
によるか、電子衝撃加熱による等の公知のいずれによつ
てもよいが、図では最も一般的な抵抗加熱方式を示した
。10、11はそれぞれの加熱電源であり、12は蒸発
源用の加熱電源である。
Although not necessarily a necessary condition, in the present invention, it is necessary to take some measures in the geometrical arrangement in order to reduce the thermal influence particularly on low melting point materials such as polymer molded articles. The feature of the present invention is the reflecting plates 8 and 9 shown in the figure, and the basic function of these reflecting plates 8 and 9 is to reflect a part of the vapor flow from the evaporation source 2 toward the substrate film 3. The virtual image of the evaporation source 2 has a large oblique component with respect to the substrate film 3 due to the number and arrangement of the evaporation sources, thereby exerting an effect equivalent to so-called oblique evaporation.
In order to perform this basic function, for example, the reflecting plates 8 and 9 are made of high melting point metal plates such as tantalum or tungsten, and are maintained at a high temperature. To maintain the high temperature, any known method such as radiant heat or electron impact heating may be used, but the figure shows the most common resistance heating method. 10 and 11 are respective heating power sources, and 12 is a heating power source for the evaporation source.

13は真空容器1内を排気する真空排気系で、14は絶
縁導入端子である。
13 is a vacuum evacuation system for evacuating the inside of the vacuum container 1, and 14 is an insulation introduction terminal.

また15は蒸発源2のシャッターである。次に本発明の
具体的な実施例について説明する。
Further, 15 is a shutter of the evaporation source 2. Next, specific examples of the present invention will be described.

。真空度:5×10−5nH9〇蒸発源:抵抗加熱方式 o蒸発材料:コバルト O 基板フイルムリポリイミドフイルム(厚さ200μ
)o フイルム速度:15m/― o基板フイルムと蒸発源間の距離:20CfL0反射板
:0.17n厚のタングステン板、平均温度1500℃
o蒸発源と反射板8間の距離:15crrL0蒸発源と
反射板9間の距離:18CTIL0基板フイルム面と反
射板8の面の交わる角度θ:000基板フイルム面と反
射板9の面の交わる角度θ:40イ0蒸発源中心線より
反射板8までの水平距離:d1=10c1n0蒸発源中
心線より反射板9までの水平距離:D2=8C!n上記
各条件により基板フイルム上に被膜を形成したところ、
次表のようであつた。
. Vacuum degree: 5 x 10-5nH9〇 Evaporation source: Resistance heating method o Evaporation material: Cobalt O Substrate film Polyimide film (thickness 200μ
)o Film speed: 15m/- oDistance between substrate film and evaporation source: 20CfL0 reflector: 0.17n thick tungsten plate, average temperature 1500℃
o Distance between the evaporation source and the reflection plate 8: 15crrL0 Distance between the evaporation source and the reflection plate 9: 18CTIL0 Angle of intersection between the substrate film surface and the surface of the reflection plate 8 θ: 000 Angle of intersection between the substrate film surface and the surface of the reflection plate 9 θ: 40i0 Horizontal distance from the center line of the evaporation source to the reflection plate 8: d1=10c1n0Horizontal distance from the center line of the evaporation source to the reflection plate 9: D2=8C! n When a film was formed on the substrate film under each of the above conditions,
It was as shown in the table below.

この表より明らかなように、本発明によれば、抗磁力が
向上していることがわかる。
As is clear from this table, it can be seen that according to the present invention, the coercive force is improved.

なお、上記数値例は一例にすぎないが、最も顕著な抗磁
力における増加効果は、恐らく斜め蒸着効果によるもの
と推定される。
Although the above numerical example is just one example, it is estimated that the most significant increase in coercive force is probably due to the oblique vapor deposition effect.

反射板の形状、構成、数、配置関係等は適宜工夫される
ものであるが、上記した一例からも明らかなように、高
密度記録の要求に不可欠の抗磁力の向上に対する効果は
著しく、その産業性は極めて大きい。また本発明におい
ては、膜厚の差から容易に推察できるように、同一膜厚
を得るには、基板の移動速度を大きくとれ、生産性があ
がる効果も見逃すことはできず、各種蒸着に用いその効
果を発揮しうるものである。またいわゆる蒸着法のいず
れにおいても、すなわち抵抗加熱蒸着に限らず、電子ビ
ーム加熱蒸着、レザービーム加熱蒸着、イオンプレーテ
イングまたはその変形等、すなわち反応性気体を導入し
ての各種蒸着法等のいずれにおいても有効である。以上
のように本発明の製造方法によれば、特性の良い磁気記
録媒体の製造が高速で行えるという利点があるものであ
る。
Although the shape, structure, number, arrangement, etc. of the reflectors can be modified as appropriate, as is clear from the above example, the effect of improving coercive force, which is essential for high-density recording, is remarkable. The industrial potential is extremely large. In addition, in the present invention, as can be easily inferred from the difference in film thickness, in order to obtain the same film thickness, the moving speed of the substrate can be increased, and the effect of increasing productivity cannot be overlooked. This can be effective. Furthermore, in any of the so-called vapor deposition methods, in other words, not only resistance heating vapor deposition, but also electron beam heating vapor deposition, laser beam heating vapor deposition, ion plating, or variations thereof, in other words, various vapor deposition methods using reactive gases, etc. It is also effective in As described above, the manufacturing method of the present invention has the advantage that magnetic recording media with good characteristics can be manufactured at high speed.

【図面の簡単な説明】[Brief explanation of the drawing]

図面は本発明による製造方法を実施するために使用する
装置の一実施例の断面正面図である。 1・・・・・・真空容器、2・・・・・・蒸発源、3・
・・・・・基板、8,9・・・・・・反射板。
The drawing is a sectional front view of an embodiment of an apparatus used to carry out the manufacturing method according to the present invention. 1... Vacuum container, 2... Evaporation source, 3.
...Substrate, 8,9...Reflector.

Claims (1)

【特許請求の範囲】 1 真空容器内に磁性材料よりなる蒸発源と基板を対向
して配設し、かつ前記蒸発源と基板間の空間に少なくと
も1ケの高温に保持された反射板を配設し、前記蒸発源
よりの蒸気流の一部を前記反射板に射突させながら前記
基板上に連続して前記蒸気流による被膜を形成すること
を特徴とする磁気記録媒体の製造方法。 2 基板として高分子成形物からなるフィルムを用いる
ことを特徴とする特許請求の範囲第1項記載の磁気記録
体の製造方法。
[Claims] 1. An evaporation source made of a magnetic material and a substrate are disposed facing each other in a vacuum container, and at least one reflector plate maintained at a high temperature is disposed in a space between the evaporation source and the substrate. A method of manufacturing a magnetic recording medium, characterized in that a part of the vapor flow from the evaporation source is made to impinge on the reflection plate, and a film is continuously formed by the vapor flow on the substrate. 2. The method for manufacturing a magnetic recording medium according to claim 1, characterized in that a film made of a polymer molded product is used as the substrate.
JP7055276A 1976-06-15 1976-06-15 Method for manufacturing magnetic recording media Expired JPS5921091B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7055276A JPS5921091B2 (en) 1976-06-15 1976-06-15 Method for manufacturing magnetic recording media

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7055276A JPS5921091B2 (en) 1976-06-15 1976-06-15 Method for manufacturing magnetic recording media

Publications (2)

Publication Number Publication Date
JPS52153411A JPS52153411A (en) 1977-12-20
JPS5921091B2 true JPS5921091B2 (en) 1984-05-17

Family

ID=13434791

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7055276A Expired JPS5921091B2 (en) 1976-06-15 1976-06-15 Method for manufacturing magnetic recording media

Country Status (1)

Country Link
JP (1) JPS5921091B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11384437B2 (en) 2017-06-22 2022-07-12 Samsung Display Co., Ltd. Etchant composition and forming method of wiring using etchant composition
US11437246B2 (en) 2019-12-27 2022-09-06 Samsung Electronics Co. , Ltd. Etchant compositions and methods of manufacturing integrated circuit devices using the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11384437B2 (en) 2017-06-22 2022-07-12 Samsung Display Co., Ltd. Etchant composition and forming method of wiring using etchant composition
US11437246B2 (en) 2019-12-27 2022-09-06 Samsung Electronics Co. , Ltd. Etchant compositions and methods of manufacturing integrated circuit devices using the same

Also Published As

Publication number Publication date
JPS52153411A (en) 1977-12-20

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