JPS5921065A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS5921065A
JPS5921065A JP57129943A JP12994382A JPS5921065A JP S5921065 A JPS5921065 A JP S5921065A JP 57129943 A JP57129943 A JP 57129943A JP 12994382 A JP12994382 A JP 12994382A JP S5921065 A JPS5921065 A JP S5921065A
Authority
JP
Japan
Prior art keywords
electrode
type
layer
drain
drain electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57129943A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0354477B2 (enrdf_load_stackoverflow
Inventor
Katsuyuki Nakayama
勝之 中山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57129943A priority Critical patent/JPS5921065A/ja
Publication of JPS5921065A publication Critical patent/JPS5921065A/ja
Publication of JPH0354477B2 publication Critical patent/JPH0354477B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/664—Inverted VDMOS transistors, i.e. source-down VDMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP57129943A 1982-07-26 1982-07-26 半導体装置 Granted JPS5921065A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57129943A JPS5921065A (ja) 1982-07-26 1982-07-26 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57129943A JPS5921065A (ja) 1982-07-26 1982-07-26 半導体装置

Publications (2)

Publication Number Publication Date
JPS5921065A true JPS5921065A (ja) 1984-02-02
JPH0354477B2 JPH0354477B2 (enrdf_load_stackoverflow) 1991-08-20

Family

ID=15022264

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57129943A Granted JPS5921065A (ja) 1982-07-26 1982-07-26 半導体装置

Country Status (1)

Country Link
JP (1) JPS5921065A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4794432A (en) * 1987-01-27 1988-12-27 General Electric Company Mosfet structure with substrate coupled source
JPH03231474A (ja) * 1990-02-06 1991-10-15 Nec Corp 縦型電界効果トランジスタ
US5134448A (en) * 1990-01-29 1992-07-28 Motorola, Inc. MOSFET with substrate source contact
KR100936632B1 (ko) 2002-03-26 2010-01-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4794432A (en) * 1987-01-27 1988-12-27 General Electric Company Mosfet structure with substrate coupled source
US5134448A (en) * 1990-01-29 1992-07-28 Motorola, Inc. MOSFET with substrate source contact
JPH03231474A (ja) * 1990-02-06 1991-10-15 Nec Corp 縦型電界効果トランジスタ
KR100936632B1 (ko) 2002-03-26 2010-01-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치

Also Published As

Publication number Publication date
JPH0354477B2 (enrdf_load_stackoverflow) 1991-08-20

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