JPS5921038A - Releasing method for pellet - Google Patents

Releasing method for pellet

Info

Publication number
JPS5921038A
JPS5921038A JP57130960A JP13096082A JPS5921038A JP S5921038 A JPS5921038 A JP S5921038A JP 57130960 A JP57130960 A JP 57130960A JP 13096082 A JP13096082 A JP 13096082A JP S5921038 A JPS5921038 A JP S5921038A
Authority
JP
Japan
Prior art keywords
wafer
adhesive
pellet
adhesive sheet
pellets
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57130960A
Other languages
Japanese (ja)
Inventor
Akihiro Yanagi
柳　明広
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Home Electronics Ltd
NEC Corp
Original Assignee
NEC Home Electronics Ltd
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Home Electronics Ltd, Nippon Electric Co Ltd filed Critical NEC Home Electronics Ltd
Priority to JP57130960A priority Critical patent/JPS5921038A/en
Publication of JPS5921038A publication Critical patent/JPS5921038A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H01L2221/68322—Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)

Abstract

PURPOSE:To prevent the positional displacement and damage of the pellet by a method wherein an ultraviolet curing resin is used as adhesives, a wafer is pasted to an adhesive sheet, ultraviolet rays are made to irradiate a pasted structure to lower adhesive power after dicing work and the pellet is released by a physical means. CONSTITUTION:The wafer 14 in which a large number of elements such as transistors are manufactured at every partition section is pasted on the adhesive sheet 11 of which ultraviolet curing acryl group adhesives 13 are applied and formed to the surface of a transparent sheet 12 made of polyvinyl chloride. Through-cut grooves 17, 17... cut along the partition section lines 16, 16... of the pellets 15, 15... are set in depth size s slightly smaller than the thickness size t of the wafer 14. The surface is coated with an ultraviolet shielding mask 19, and ultraviolet rays 23, 23... generated from high-pressure mercury lamps 21, 21... are bundled into parallel line groups by parabolic concave mirrors 22 and irradiated to an exposed window 20. The adhesives 12 cure and adhesive power lowers remarkably, a vacuum suction collet 25 is brought near previously from an upper section, and the pellets 15 are released through a push-up by releasing bar 26 from a lower section.

Description

【発明の詳細な説明】 技術分野 この発明は、一枚のウェーハより多数の半導体素子を得
る場合に、現在数〈実施されている粘着シー　ト貼着力
式（・τおけるペレットｉｌｌ　１１ｆ技？ｎｉ　ｖｃ
　関するもので”１）る。[Detailed Description of the Invention] Technical Field This invention applies to the presently implemented adhesive sheet adhesion force method (Pellet ill 11f technique in vc
Regarding "1)".

背景技術 従来より１”７エーへの細分区画Ｃ′とに多数１１７）
素イを形成させて後、区１ｉ！ｌ　ＩＸ分線に’ｉ’Ａ
って各べＬ・ットに分割するには、次に−示す粘着シー
ト貼米方式が一般に普及している。すなわち、第１図に
示すように、伸展性が良好゛なポリ塩化ビニル等の粘着
シー）ｌへ、多数の素子を形成済みのウー丁−／＼２を
貼着させて、ウェーハ２十の素子区画境界線３゜３、・
・　（で沿って形成１．、、たスクライブ溝３’　＋　
”’　１・・・・・・で引裂き分割する方法で、粘着シ
ー　計１を矢１０ｉ４　、４　、・・・・・で示す」こ
うにつ３丁−）１２とともに放射方向に引延すやり方を
採用している。しかし、このやり方は、粘着ジートコを
引延ず際に、ウェーハ２の中央部と周縁部とで廷びに差
が生じる。BACKGROUND ART Conventionally, there are many subdivisions C' and 117)
After forming the base, ward 1i! l 'i'A on IX line
In order to divide each bed into L/lots, the following adhesive sheet pasting method is commonly used. That is, as shown in FIG. 1, 20 wafers are attached by attaching a wafer with a large number of elements formed thereon to an adhesive sheet such as polyvinyl chloride that has good extensibility. Element partition boundary line 3゜3,・
・(Form along the 1.,, scribe groove 3' +
``' A method of tearing and dividing adhesive sheet 1 with arrows 10i4, 4, ``1...'' and stretching it in the radial direction with 3 pieces of kounitsu -) 12. is adopted. However, in this method, when the adhesive GITCO is stretched, a difference occurs between the central part and the peripheral part of the wafer 2.

換言すれば、ウェーハ全面に亘って均一に引延すことが
困難である。よってウェーハ２十の急激な延びが生じる
部分５，５．・・・・　においては、第２図に示すよう
に、分割時の引裂き衝撃によって微細なりラック６，６
．・・・・・・を招いたり、ペレット７．７．・・・・
・・　と粘着シー）１との接着力が著しく弱くなり位置
ずれを生じたりする欠点があった。In other words, it is difficult to spread it uniformly over the entire wafer. Therefore, the portions 5, 5 . . . where the wafer 20 suddenly stretches. As shown in Fig. 2, the racks 6, 6 are slightly bent due to the tearing impact at the time of splitting.
．． ...... or pellets 7.7.・・・・・・
There was a drawback that the adhesive force between the adhesive sheet and the adhesive sheet 1 was significantly weakened, resulting in misalignment.

これらの欠点があると、単にウェーハ２をペレット’７
．’７．・・・・・・に分割する作業性の低下たけでな
く、ペレットマウントエ゛程へ供給する能率へも悪影普
する問題がある。With these drawbacks, simply pellet the wafer 2'7
．． '7. There is a problem that not only the workability of dividing into pellets is reduced, but also the efficiency of supplying the pellets to the pellet mounting area is adversely affected.

そこで、」二記問題解決のために１．第３図に示すヨウ
に、ウェーハ２′＼スクライブ溝を形成する際に、ダイ
サ８により粘着シート１’ｌＨで切り込み、ウェーハ２
を完全区画カットするスルーカット溝９．９．・・・・
・・を設けるやり方が考えられる。ところが、このやり
方は、粘着シート１０表面粘着層をも削ることとなるの
で、粘着剤１１　、１１．・・・・・がウェーハ２上や
ダイサ８に付着してし捷い、ペレツ）７，７．・・・・
・・を汚染してしまう問題があった。Therefore, in order to solve the problem in section 2, 1. When forming a scribe groove on the wafer 2' as shown in FIG.
Through-cut groove for completely section cutting 9.9.・・・・・・
One possible way is to set up... However, this method also scrapes the adhesive layer on the surface of the adhesive sheet 10, so the adhesive 11, 11. 7,7.・・・・・・
There was a problem of contamination of...

またウェーハ２を完全に区画カットしても、各々のペレ
ット？、７．・・・・・・の裏面は、粘着シート１に貼
着されたままであり、ペレット剥離作業が困難である新
な問題を生じていた。Also, even if wafer 2 is completely sectioned, will each pellet be cut? ,7. . . . remained attached to the adhesive sheet 1, creating a new problem in which it was difficult to remove the pellets.

発明の開示 この発明は、上述の事情を検討・考察した結果提唱され
たもので、粘着シートの引勉しを行わないスルーカット
溝を股″けるやり方を採るにもかかわらず、従来よりの
問題を解決した独特の特徴があるものである。すなわち
、この発明は、粘着シートの粘着剤に紫外線硬化性樹脂
を用いて、つ工−ハヲ粘着シートへ貼着し、ペレットの
区画毎にスルーカット溝を設けるダイシング作業後、貼
着構体へ紫外線を照射して粘着シートの粘着力を低下さ
せ、ペレット剥離棒にてウェーハ突き上げや衝撃を与え
るしごき等の物理的手段によってペレット剥離を行う方
法とするものである。したがって、この発明は、粘着シ
ート貼着方式を採るにもかかわらず、従来の諸欠点を排
除し、しかもペレットマウント工程に好適な利点をもた
らすことができるものである。DISCLOSURE OF THE INVENTION This invention was proposed as a result of studying and considering the above-mentioned circumstances, and although it adopts a method of straddling through-cut grooves that does not involve tightening the adhesive sheet, it does not solve the conventional problems. In other words, this invention uses an ultraviolet curable resin as the adhesive of the adhesive sheet, adheres it to the adhesive sheet, and cuts through each section of the pellet. After dicing to create grooves, the adhesive structure is irradiated with ultraviolet rays to reduce the adhesive strength of the adhesive sheet, and the pellets are peeled off by physical means such as pushing up the wafer with a pellet peeling rod or ironing with impact. Therefore, although the present invention employs an adhesive sheet pasting method, it can eliminate the various drawbacks of the conventional method, and can also provide advantages suitable for the pellet mounting process.

発明実施のための最良の形態 第４図〜第８図は、この発明の一実施例となるペレット
剥離方法による剥離作業工程を示している。まず第４図
は、ウエーノ１貼着構体１０の断面図で、１１は、透明
なポリ塩化ビニル製シート１２の表面に紫外線硬化性の
アクリル系粘着剤１３を塗着形成した粘着シートで、例
えば、拡散法によりＰｙｋ合を形成して各区画区分毎に
多数のトランジスタ等の素子を作ったウエーノ＼１４を
貼着したものである。この時ウエーノＸ１４は、この実
施例では従来の一例を示した第３図の構体と少し異り、
ベレツ）　１５，１５．・・・・・・の区画区分線１６
　、１６゜・・・・・・に沿って切削するスルーカット
溝１７．ｌ’７゜・・・・・・を、ウエーノ１１４の厚
さ寸法ｔより若干率さい深さ寸法８に設定されている。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIGS. 4 to 8 show the steps of a pellet peeling method according to an embodiment of the present invention. First, FIG. 4 is a cross-sectional view of the Ueno 1 adhesion structure 10, and 11 is an adhesive sheet in which an ultraviolet-curable acrylic adhesive 13 is applied and formed on the surface of a transparent polyvinyl chloride sheet 12, for example. , Ueno\14 is pasted in which a large number of elements such as transistors are made in each section by forming a Pyk junction using the diffusion method. At this time, the structure of Ueno
Berets) 15,15. Division line 16 of...
, 16°... Through-cut groove 17. l'7°... is set to a depth dimension 8 which is slightly larger than the thickness dimension t of the Ueno 114.

つぎに第５図は、ウェーハ貼着構体１０への紫外線照射
工程を示す棚５略構成図で、ウエーノ１貼着構体ｌＯは
、そのシート１２側を上面にして基台１８上に載置し、
第６図にて明らかなように、ウエーノ＼１４の剥離不要
な斜線で示した端縁部対応部１２′及びその外方を紫外
線遮光マスク１９にて覆い、つまり、ペレッ）１５，１
５．・・・・・　粘着状態の中央部分を露出室２０に設
定している。そして、２１，２１．・・・・・・　５− は、紫外線発生源である高圧水銀灯、２２，２２゜・・
・・・　は高圧水銀灯２１　、２１　、・・・・・・よ
り発生した紫外線２３，２３．・・・・　を平行線群に
束ねて露出室２０へ照射きせるための放物線形凹面鏡で
ある。Next, FIG. 5 is a schematic configuration diagram of a shelf 5 showing the process of irradiating ultraviolet rays to the wafer bonding structure 10. The wafer bonding structure 10 is placed on the base 18 with its sheet 12 side facing upward. ,
As is clear from FIG. 6, the edge corresponding portion 12' of Ueno\14 indicated by diagonal lines, which does not require peeling, and the outside thereof are covered with an ultraviolet light shielding mask 19.
5. ... The central part of the sticky state is set as the exposure chamber 20. And 21, 21.・・・・・・ 5- is a high-pressure mercury lamp that is a source of ultraviolet light, 22, 22°...
. . . are ultraviolet rays 23, 23 . . . generated from high-pressure mercury lamps 21 , 21 , . This is a parabolic concave mirror for bundling .

以上の工程によって紫外線を照射されたウェーハ貼着構
体１０は、剥離すべきペレツ）１５，１５゜・・・・・
・が貼着されている粘着剤１２が、硬化して粘着力が著
しく低下している。例えば、Ｊ工５ＺＯ２３７規格によ
った粘着力試験結果では、初期粘着力が９　ｅ　ｇ　／
　２５冑であったものが、０〜５９　／　２５　ｔｔｓ
程度に低下することが確認されている。しかし粘着剤１
３は硬化してもペレット１５，１５．・・・・・・を接
着していることには変りないので、従来の第２図に示さ
れたようなペレット位置ずれを生じる恐れはない。、そ
の原因は、紫外線によって粘着剤の分子構造が固相状態
に近づき粘性は低下するが、接着エネルギは分子構造の
変化にもかかわらず粘着剤へ吸着される公知の接着理論
に基〈ものと考えられる。The wafer bonding structure 10 that has been irradiated with ultraviolet rays through the above steps is separated into pellets (15, 15°) to be peeled off.
The adhesive 12 to which * is attached has hardened and its adhesive strength has significantly decreased. For example, according to the adhesive strength test results according to the J Engineering 5ZO237 standard, the initial adhesive strength was 9 e g /
The one that was 25 helmets is 0-59 / 25 tts
It has been confirmed that this decreases to a certain extent. However, adhesive 1
3 is pellets 15, 15 even after hardening. . . . is still attached, so there is no risk of the pellet position shifting as shown in FIG. 2 in the conventional case. The reason for this is that ultraviolet rays cause the molecular structure of the adhesive to approach a solid state and reduce its viscosity, but the adhesive energy is absorbed by the adhesive despite changes in the molecular structure.Based on the well-known adhesive theory, Conceivable.

さて、紫外線を照射されたウェーハ貼着構体ｌＯ６− は、第７図に示すように、筒状保持グイ２３とその外周
枠体２４と（（よって粘着シート］１の外周端縁部］］
′を挾みイ」け゛されて張架され、任意のベレット１５
へ−Ｌ方より真空吸引コレット２５を接近させてｊ♂き
、下方よりシート１２を介したま１ヘレツ）１５のみを
剥離棒２６により突き上げてウェー八貼着構体１０より
引き千切るとともに真空吸引コレット２５へ吸着させて
、ベレット］５の剥離を行う。ＰＪ　Ａ部を拡大して示
す第８図は、ベレツ）　Ｊ５の剥離中の状態である。Now, as shown in FIG. 7, the wafer adhesion structure lO6- which has been irradiated with ultraviolet rays is composed of a cylindrical holding gou 23, its outer peripheral frame 24 ((thus, the outer peripheral edge of the adhesive sheet 1))
15
The vacuum suction collet 25 is approached from the L direction, and only the sheet 12 is pushed up from below with the peeling rod 26 to be torn off from the wafer pasting structure 10, and the vacuum suction collet is removed. 25 and peel off the pellet] 5. FIG. 8, which shows an enlarged view of part A of PJ, shows the state in which PJ5 is being peeled off.

以１−の実施例で示したベレット剥離方法は、つニー八
貼着構体〕Ｏのシー）１２の引廷ばしを行わずに、しか
も粘着剤］２を削り取ることなくベレン）１５，１５．
・・・・・　を剥離することができるので、ペレット剥
離離における位置ずねや汚染の危険性が皆無となり、そ
の上に、照射する紫外線のマスキングを適宜パターン変
化させて所望のベレットのみを選択的に、先行パイロッ
ト剥離させることが可能である。１な、このベレット剥
離方法は、スルーカット溝１７．〕７．・・・・・・を
ウェーへ切断寸前捷で深く切り込むこノーがてきるので
、ベレットの切断側面が従来よりも著しく整い、べｌ〜
フットの区画４法が細かい場合でも作業性を損わない利
点がある。The method for peeling off the pellets shown in Example 1-1 below can be used to remove the adhesive without scraping off the adhesive. ．．
Since the pellet can be peeled off, there is no risk of misalignment or contamination during pellet peeling, and in addition, the masking pattern of the irradiated ultraviolet rays can be changed appropriately to select only the desired pellets. Generally speaking, it is possible to separate the leading pilot. 1. This pellet peeling method uses through-cut grooves 17. ]7. Because it is possible to make a deep cut into the wafer just before cutting, the cutting side of the pellet is much more uniform than before, making it easier to cut the wafer.
There is an advantage that workability is not impaired even when the foot section 4 method is fine.

尚、以−にの実施例は、物理的な剥離手段として、突き
上げるｆ段を採ったが、この発明は、紫外線照射によっ
て、ベレツ）１５，１５．・・・・・・の粘着力を低下
させでいるので、第９図に示ずようにつ工−ノＸ貼着構
体ＪＯを一ト側より水平に１．ごき棒２７にてしごき、
−斉に多数のベレツｌ−１５、］、　５　。In addition, in the above embodiments, a pushing-up f-stage was used as the physical peeling means, but in this invention, ultraviolet irradiation is used to peel off the particles (Beretsu) 15, 15. . . . , so as to reduce the adhesion of . . . , as shown in FIG. I squeezed with a shaking stick 27,
- A large number of Berets l-15,], 5.

を完全カットしてやり、剥離１−でもよい。要し するこの発明における物理的剥離手段は、引き離し力と
なる衝撃を加えるためのものである。You can cut it completely and peel it off 1-. The physical peeling means in this invention is for applying an impact as a peeling force.

この発明によれば、ベレット剥Ｍにおいて、従来不都合
にも併発していたべｔ〜・ツト位置づれや破損全防止で
き、１〜かもウェーハ中の一部のベレットのみの先行剥
離テストが可能であり、剥離作業が完壁となる。そして
さらに、べｔ−ットの切断側面を整わずことができ、ウ
ェーへのベレット化歩留り向上、高品質化にも寄与する
優れた諸効果がある。According to this invention, in the case of pellet peeling, it is possible to completely prevent the displacement and breakage of the beads, which conventionally occurred inconveniently, and it is possible to perform a preliminary peeling test of only a part of the pellets in the wafer. , the peeling work is complete. Furthermore, the cut side surface of the bed can be left untidy, and there are various excellent effects that contribute to improving the yield of pelletizing wafers and improving quality.

【図面の簡単な説明】[Brief explanation of the drawing]

第１１図は、従来のウェー八貼着構体の斜視図、第２図
はそのベレット分割時の分割不良状態の要部斜視図、第
３図はウェーハのスルーカットを行う方式の貼着構体の
断面図、第４図はこの発明の一実施例であるベレット剥
離方法にて使用するつニー八貼着構体の断面図、第５図
はその紫外線照射工程を示す概略構成図、第６図は、そ
の貼着構体に紫外線遮光マスキングを施した平面図、第
７図は、その貼着一体よりベレット剥離を行う断面視概
略構成図、第８図は、第７図における円Ａ部を拡大した
要部断面図、第９図は、この発明のその′他の実施例に
て使用ウェー八貼着構体のペレット剥離を行う要部拡大
断面図である。 １０・・・・・・ウェー八貼着構体、 １１・・・・・・粘着シート、　　　１２・・・・・・
シート、１３・・・・・・粘着剤、 １５．１５．・・・・・　・・・・・・ベレット、　９
− ２３　、２３　、・・・・・・・・・・・　紫外線、２
６・・・・・剥離棒、　　２７・・・・　しごき棒。Fig. 11 is a perspective view of a conventional wafer bonding structure, Fig. 2 is a perspective view of the main part of the wafer in a defective state when dividing the pellet, and Fig. 3 is a perspective view of a bonding structure that performs through-cutting of the wafer. 4 is a cross-sectional view of a one-knee-eight adhesion structure used in the pellet peeling method which is an embodiment of the present invention, FIG. 5 is a schematic configuration diagram showing the ultraviolet irradiation process, and FIG. , a plan view of the adhesive structure subjected to ultraviolet light shielding masking, FIG. 7 is a cross-sectional schematic configuration diagram for performing pellet peeling from the adhesive body, and FIG. 8 is an enlarged view of circle A in FIG. 7. FIG. 9 is an enlarged sectional view of the main part of the wafer bonding structure used in another embodiment of the present invention for peeling off pellets. 10...Way eight adhesion structure, 11...Adhesive sheet, 12...
Sheet, 13...Adhesive, 15.15.・・・・・・・・・・・・Berrett, 9
- 23 , 23 , ...... Ultraviolet light, 2
6... Peeling stick, 27... Straining stick.

Claims (1)

【特許請求の範囲】[Claims] 朱子を多数１し成４７ｊ）みのウェーハを粘着シートに
貼着して、憲子区両ことに々゛イシング後ペレットに−
／し・−キング［−１個々のペレットを粘着シートより
剥離する方法に関して、前記粘着シートの粘着剤に紫外
線？１ｌｌｌ化性樹脂を用いて５ダイシング後詰着構休
−＼紫外線を照射して粘着シートの粘着力を低丁させて
、剥離棒にてのウェーへ突き上げや（資）撃を与える１
〜どき等の物理的手段により剥離′させることを特徴と
するペレット剥離方法。A large number of satin wafers were attached to an adhesive sheet, and after icing, they were made into pellets.
/shi・-King [-1 Regarding the method of peeling individual pellets from an adhesive sheet, is it possible to apply ultraviolet rays to the adhesive of the adhesive sheet? After 5 dicing using 1llll-forming resin, packing is done - irradiation with ultraviolet rays to lower the adhesive strength of the adhesive sheet, and then push up and hit the wafer with a peeling rod 1
A pellet peeling method characterized by peeling off by physical means such as pounding.
JP57130960A 1982-07-27 1982-07-27 Releasing method for pellet Pending JPS5921038A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57130960A JPS5921038A (en) 1982-07-27 1982-07-27 Releasing method for pellet

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57130960A JPS5921038A (en) 1982-07-27 1982-07-27 Releasing method for pellet

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP62115388A Division JPS63211644A (en) 1987-05-12 1987-05-12 Manufacture of semiconductor pellet

Publications (1)

Publication Number Publication Date
JPS5921038A true JPS5921038A (en) 1984-02-02

Family

ID=15046650

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57130960A Pending JPS5921038A (en) 1982-07-27 1982-07-27 Releasing method for pellet

Country Status (1)

Country Link
JP (1) JPS5921038A (en)

Cited By (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6031918A (en) * 1983-07-29 1985-02-18 関西日本電気株式会社 Adhesive sheet for dicing semiconductor wafer
JPS60189938A (en) * 1984-03-12 1985-09-27 Nitto Electric Ind Co Ltd Protective method of semiconductor wafer
JPS60196956A (en) * 1984-03-12 1985-10-05 Nitto Electric Ind Co Ltd Adhesive metal sheet for fixing semiconductor wafer
JPS60201643A (en) * 1984-03-27 1985-10-12 Nitto Electric Ind Co Ltd Processing of semiconductor wafer
JPS60201642A (en) * 1984-03-27 1985-10-12 Nitto Electric Ind Co Ltd Processing of semiconductor wafer
JPS60201646A (en) * 1984-03-27 1985-10-12 Nitto Electric Ind Co Ltd Fixation of semiconductor wafer
JPS60201647A (en) * 1984-03-27 1985-10-12 Nitto Electric Ind Co Ltd Fixation of semiconductor wafer
JPS60223139A (en) * 1984-04-18 1985-11-07 Nitto Electric Ind Co Ltd Bonding sheet for fixing semiconductor wafer
JPS60172345U (en) * 1984-04-23 1985-11-15 日東電工株式会社 UV irradiation device
JPS6197848A (en) * 1984-10-19 1986-05-16 Nippon Kako Seishi Kk Manufacture of semiconductor chip
JPS61187248A (en) * 1985-02-14 1986-08-20 Bando Chem Ind Ltd Dicing method for semiconductor wafer
JPS6254777A (en) * 1985-09-04 1987-03-10 Bando Chem Ind Ltd Pressure-sensitives adhesion composition and pressure-sensitive adhesive sheet
JPS6254776A (en) * 1985-09-04 1987-03-10 Bando Chem Ind Ltd Pressure-sensitive adhesion composition and pressure-sensitive adhesive sheet
JPS6254778A (en) * 1985-09-04 1987-03-10 Bando Chem Ind Ltd Pressure-sensitive adhesion composition and pressure-sensitive adhesive sheet
JPS6254937A (en) * 1985-09-04 1987-03-10 Bando Chem Ind Ltd Dicing method of semiconductor wafer
JPS62189112A (en) * 1986-02-17 1987-08-18 ウシオ電機株式会社 Adhesive sheet treater
JPS62189110A (en) * 1986-02-17 1987-08-18 ウシオ電機株式会社 Adhesive sheet treater
JPS62189111A (en) * 1986-02-17 1987-08-18 ウシオ電機株式会社 Adhesive sheet treater
JPS62216244A (en) * 1986-03-17 1987-09-22 Fujitsu Ltd Manufacture of semiconductor device
JPS62190352U (en) * 1986-05-22 1987-12-03
JPS6343342A (en) * 1986-08-08 1988-02-24 Bando Chem Ind Ltd Method of dicing semiconductor wafer
JPH01136350A (en) * 1987-11-20 1989-05-29 Nec Kansai Ltd Manufacture of semiconductor device
JPH01139224A (en) * 1987-11-26 1989-05-31 Fujitsu Ltd Peeling method for cut semiconductor chip
JPH03167839A (en) * 1989-11-28 1991-07-19 Nec Kansai Ltd Dicing method
JPH03278444A (en) * 1990-09-07 1991-12-10 Bando Chem Ind Ltd Dicing of semiconductor wafer
JPH0766474A (en) * 1993-08-31 1995-03-10 Jgc Corp Carbon dioxide laser device
US5637395A (en) * 1984-03-12 1997-06-10 Nitto Electric Industrial Co., Ltd. Thin adhesive sheet for working semiconductor wafers
EP1458012A2 (en) * 2003-03-12 2004-09-15 Nitto Denko Corporation Ultraviolet light irradiating method and an apparatus using the same
CN102278935A (en) * 2011-04-25 2011-12-14 北京大学 Method for estimating relative position of radiation displacement damage area of COMS (Complementary Metal Oxide Semiconductor) device in channel

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4911434A (en) * 1972-05-30 1974-01-31
JPS49114345A (en) * 1973-02-28 1974-10-31
JPS5190565A (en) * 1975-02-07 1976-08-09

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4911434A (en) * 1972-05-30 1974-01-31
JPS49114345A (en) * 1973-02-28 1974-10-31
JPS5190565A (en) * 1975-02-07 1976-08-09

Cited By (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6031918A (en) * 1983-07-29 1985-02-18 関西日本電気株式会社 Adhesive sheet for dicing semiconductor wafer
US6010782A (en) * 1984-03-12 2000-01-04 Nitto Electric Industrial Co., Ltd. Thin adhesive sheet for working semiconductor wafers
JPS60189938A (en) * 1984-03-12 1985-09-27 Nitto Electric Ind Co Ltd Protective method of semiconductor wafer
JPS60196956A (en) * 1984-03-12 1985-10-05 Nitto Electric Ind Co Ltd Adhesive metal sheet for fixing semiconductor wafer
US5637395A (en) * 1984-03-12 1997-06-10 Nitto Electric Industrial Co., Ltd. Thin adhesive sheet for working semiconductor wafers
US5714029A (en) * 1984-03-12 1998-02-03 Nitto Electric Industrial Co., Ltd. Process for working a semiconductor wafer
JPS60201642A (en) * 1984-03-27 1985-10-12 Nitto Electric Ind Co Ltd Processing of semiconductor wafer
JPS60201647A (en) * 1984-03-27 1985-10-12 Nitto Electric Ind Co Ltd Fixation of semiconductor wafer
JPS60201646A (en) * 1984-03-27 1985-10-12 Nitto Electric Ind Co Ltd Fixation of semiconductor wafer
JPH0472387B2 (en) * 1984-03-27 1992-11-18 Nitto Denko Corp
JPS60201643A (en) * 1984-03-27 1985-10-12 Nitto Electric Ind Co Ltd Processing of semiconductor wafer
JPH0472386B2 (en) * 1984-03-27 1992-11-18 Nitto Denko Corp
JPS60223139A (en) * 1984-04-18 1985-11-07 Nitto Electric Ind Co Ltd Bonding sheet for fixing semiconductor wafer
JPH0570937B2 (en) * 1984-04-18 1993-10-06 Nitto Denko Corp
JPS60172345U (en) * 1984-04-23 1985-11-15 日東電工株式会社 UV irradiation device
JPS6197848A (en) * 1984-10-19 1986-05-16 Nippon Kako Seishi Kk Manufacture of semiconductor chip
JPS61187248A (en) * 1985-02-14 1986-08-20 Bando Chem Ind Ltd Dicing method for semiconductor wafer
JPH0582059B2 (en) * 1985-09-04 1993-11-17 Bando Chemical Ind
JPS6254777A (en) * 1985-09-04 1987-03-10 Bando Chem Ind Ltd Pressure-sensitives adhesion composition and pressure-sensitive adhesive sheet
JPS6254776A (en) * 1985-09-04 1987-03-10 Bando Chem Ind Ltd Pressure-sensitive adhesion composition and pressure-sensitive adhesive sheet
JPS6254778A (en) * 1985-09-04 1987-03-10 Bando Chem Ind Ltd Pressure-sensitive adhesion composition and pressure-sensitive adhesive sheet
JPH0635569B2 (en) * 1985-09-04 1994-05-11 バンドー化学株式会社 Pressure sensitive adhesive sheet
JPS6254937A (en) * 1985-09-04 1987-03-10 Bando Chem Ind Ltd Dicing method of semiconductor wafer
JPS62189112A (en) * 1986-02-17 1987-08-18 ウシオ電機株式会社 Adhesive sheet treater
JPS62189111A (en) * 1986-02-17 1987-08-18 ウシオ電機株式会社 Adhesive sheet treater
JPS62189110A (en) * 1986-02-17 1987-08-18 ウシオ電機株式会社 Adhesive sheet treater
JPS62216244A (en) * 1986-03-17 1987-09-22 Fujitsu Ltd Manufacture of semiconductor device
JPS62190352U (en) * 1986-05-22 1987-12-03
JPS6343342A (en) * 1986-08-08 1988-02-24 Bando Chem Ind Ltd Method of dicing semiconductor wafer
JPH0319705B2 (en) * 1987-11-20 1991-03-15 Kansai Nippon Electric
JPH01136350A (en) * 1987-11-20 1989-05-29 Nec Kansai Ltd Manufacture of semiconductor device
JPH01139224A (en) * 1987-11-26 1989-05-31 Fujitsu Ltd Peeling method for cut semiconductor chip
JPH03167839A (en) * 1989-11-28 1991-07-19 Nec Kansai Ltd Dicing method
JPH0542138B2 (en) * 1990-09-07 1993-06-25 Bando Chemical Ind
JPH03278444A (en) * 1990-09-07 1991-12-10 Bando Chem Ind Ltd Dicing of semiconductor wafer
JPH0766474A (en) * 1993-08-31 1995-03-10 Jgc Corp Carbon dioxide laser device
EP1458012A2 (en) * 2003-03-12 2004-09-15 Nitto Denko Corporation Ultraviolet light irradiating method and an apparatus using the same
EP1458012A3 (en) * 2003-03-12 2006-05-10 Nitto Denko Corporation Ultraviolet light irradiating method and an apparatus using the same
US7091499B2 (en) 2003-03-12 2006-08-15 Nitto Denko Corporation Ultraviolet irradiating method and an apparatus using the same
CN102278935A (en) * 2011-04-25 2011-12-14 北京大学 Method for estimating relative position of radiation displacement damage area of COMS (Complementary Metal Oxide Semiconductor) device in channel

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