JPS59205776A - Optical module - Google Patents
Optical moduleInfo
- Publication number
- JPS59205776A JPS59205776A JP58081090A JP8109083A JPS59205776A JP S59205776 A JPS59205776 A JP S59205776A JP 58081090 A JP58081090 A JP 58081090A JP 8109083 A JP8109083 A JP 8109083A JP S59205776 A JPS59205776 A JP S59205776A
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- chip
- conversion element
- element chip
- optical fiber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 27
- 238000006243 chemical reaction Methods 0.000 claims abstract description 39
- 239000013307 optical fiber Substances 0.000 claims abstract description 23
- 238000000465 moulding Methods 0.000 abstract description 8
- 230000002093 peripheral effect Effects 0.000 abstract description 7
- 230000008878 coupling Effects 0.000 abstract description 4
- 238000010168 coupling process Methods 0.000 abstract description 4
- 238000005859 coupling reaction Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 3
- 239000000835 fiber Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
（ア）技術分野
この発明は光通信用光リンクに用いられる送受信用の光
モジュールに関する。DETAILED DESCRIPTION OF THE INVENTION (A) Technical Field The present invention relates to an optical module for transmitting and receiving used in an optical link for optical communication.
（イ）従来技術とその問題点
光通信用光リンクに於て、電気信すを光に変換する送信
用モジュール、或は光信号を電気信号に変換する受信用
モジュールなどの光モジュールが用いられる。(B) Prior art and its problems In optical links for optical communication, optical modules are used, such as a transmitting module that converts electrical signals to optical signals, or a receiving module that converts optical signals to electrical signals. .
光モジュールは、発光素子チップ、又は受光素子チップ
と、これら光電変換素子の周辺回路を構成するＩＣデツ
プと、光電変換素子及びＩＣデツプをマウントした複数
のリードフレームと、リードフレームをモールドして一
枚の透明の回路素子としたモールド体と、光ファイバを
接続するだめの、光フアイバ接続用ハウジングなどを含
む。An optical module consists of a light-emitting element chip or a light-receiving element chip, an IC depth that constitutes a peripheral circuit of these photoelectric conversion elements, a plurality of lead frames on which the photoelectric conversion elements and IC depths are mounted, and a molded lead frame. It includes a molded body made of a transparent circuit element, a housing for connecting an optical fiber, etc.
周辺回路としては、増幅、変調、復調、タイミング、二
値化回路・・など、光電変換回路の目的に応じて多様な
ＩＣチップが任意に用いられる。As peripheral circuits, various IC chips such as amplification, modulation, demodulation, timing, binarization circuits, etc. can be arbitrarily used depending on the purpose of the photoelectric conversion circuit.
光電変換素子が発光ダイオードであって、送信器として
用いられる光モジュールの場合もある。In some cases, the photoelectric conversion element is a light emitting diode and is an optical module used as a transmitter.
この場合、周辺回路を構成するＩｃとしては、増幅回路
、変調回路、ＬＥＤ駆動回路用・・などのＩＣが用いら
れる。In this case, as the IC constituting the peripheral circuit, an IC for an amplifier circuit, a modulation circuit, an LED drive circuit, etc. is used.
受信器として用いられる光モジュールの場合、光電変換
素子は、Ｓｉホトダイオードである事が多い。この場合
、周辺回路のＩＣとして、増幅回路、波形整形回路、二
値化回路用・・・などのＩＣが用いられる。In the case of an optical module used as a receiver, the photoelectric conversion element is often a Si photodiode. In this case, ICs for amplifier circuits, waveform shaping circuits, binarization circuits, etc. are used as peripheral circuit ICs.
いずれにしても、光モジュールは、光ファイ／くと、光
電変換素子とを効率よく結合しなければならない。In any case, the optical module must efficiently couple the optical fiber and the photoelectric conversion element.
第４図は従来例に係る光モジュールの縦断面図である。FIG. 4 is a longitudinal sectional view of an optical module according to a conventional example.
リードフレーム１０は平坦な細長い導体であって、その
上に光電変換素子チップ１１がマウントされている。光
電変換素子は、発光素子（発光ダイオード、レーザグイ
オー・ド）の場合もあるし、受光素子（ホトダイオード
、アバランシェホトダイオードなど）の場合もある。The lead frame 10 is a flat, elongated conductor, on which the photoelectric conversion element chip 11 is mounted. The photoelectric conversion element may be a light emitting element (light emitting diode, laser diode) or a light receiving element (photodiode, avalanche photodiode, etc.).
この他に、ＩＣチップをマウントしたリードフレームや
、チップをマウントしていないリードフレームもある。In addition, there are lead frames with IC chips mounted thereon and lead frames without chips mounted thereon.
光電変換素子チップ、ＩＣチップの電極、ＩＪ−ドフレ
ームなどは、ワイヤボンディングによって接続される。The photoelectric conversion element chip, the electrodes of the IC chip, the IJ-deframe, etc. are connected by wire bonding.
こうして接続されたリードフレーム、光電変換素子チッ
プ、ＩＣチップなどは、適当な型枠の中で、透明樹脂を
使ってモールドされる。モールド体１２は平板透明状で
ある。これを別体のノ・クジング（図示せず）に挿入す
る。・・クジングには、光ファイバの先端を挿入し固定
する機構が設けられている。The thus connected lead frame, photoelectric conversion element chip, IC chip, etc. are molded using transparent resin in a suitable mold. The molded body 12 is a transparent flat plate. This is inserted into a separate nozzle (not shown). ...The Kuzing is equipped with a mechanism for inserting and fixing the tip of the optical fiber.
光ファイバと光モジュールとを結合した時、光 “
ファイバの芯線は、光電変換素子１１の前方に位置する
。光ファイノく芯線（図示せず）は直接、モールド体１
２に接触する。When optical fiber and optical module are connected, light “
The core wire of the fiber is located in front of the photoelectric conversion element 11. The optical fiber core wire (not shown) is directly connected to the mold body 1.
Contact 2.
光フアイバ芯線の端面と光電変換素子１１との間にはモ
ールド体が介在する。モール１体１２は透明体であるか
ら光を通すが、集光作用はない。A mold body is interposed between the end face of the optical fiber core wire and the photoelectric conversion element 11. Since the molding unit 12 is a transparent body, it allows light to pass through, but it does not have a light condensing effect.
発光ダイオード、ホトダイオードと、光フアイバ芯線と
の間の光エネルギーの伝達効率は必ずしも良くない。The transmission efficiency of light energy between a light emitting diode, a photodiode, and an optical fiber core wire is not necessarily good.
そこで、充電変換素子１１の直上のモール１体を隆起さ
せてレンズ１３にすることも考えられる。Therefore, it is also possible to raise the molding directly above the charge conversion element 11 to form the lens 13.
しかし、このようにしても光フアイバ端面と光電変換素
子１１との距離が大きく、集光作用はあ捷り懇められな
い。However, even if this is done, the distance between the end face of the optical fiber and the photoelectric conversion element 11 is large, and the light condensing effect cannot be improved.
（つ）本発明の光モジュール
本発明の光モジュールは、リードフレームを、適当に変
形して、前述の欠点を解決した。(1) Optical module of the present invention The optical module of the present invention solves the above-mentioned drawbacks by appropriately deforming the lead frame.
リードフレームの中間部を、光電変換素子をマウントす
る方向へ隆起させ、この隆起部の一箇所を凹ませ、凹所
に光電変換素子をマウントする。The middle part of the lead frame is raised in the direction in which the photoelectric conversion element is mounted, one part of this raised part is recessed, and the photoelectric conversion element is mounted in the recess.
以下、実施例を示す図面によって説明する。Embodiments will be described below with reference to drawings showing embodiments.
第１図は光モジュールのハラジングラ除く、モールド部
を示す平面図、第２図は光電変換素子チップをマウント
したリードフレームに沿う縦断面図である。FIG. 1 is a plan view showing the molded portion of the optical module, excluding any haggling, and FIG. 2 is a longitudinal sectional view taken along a lead frame on which a photoelectric conversion element chip is mounted.
リードフレーム１．２．３け、例えば銅合金などで作ら
れる細長い板である。リードフレームの数は任意である
。Lead frame 1.2.3 is a long and narrow plate made of, for example, copper alloy. The number of lead frames is arbitrary.
この例では、リードフレーム１には、発光素子又は受光
素子などの光電変換素子チップ４がマクントシである。In this example, the lead frame 1 includes a photoelectric conversion element chip 4 such as a light emitting element or a light receiving element.
リードフレーム２には、周辺回路を構成するＩＣチップ
５がマウントしである。リードフレーム３は単なる接続
端子である。On the lead frame 2, an IC chip 5 constituting a peripheral circuit is mounted. The lead frame 3 is just a connection terminal.
これは単カる一例で、Ｉｃの数も任意で、ＩＪ−ドフレ
ームの数も任意である。This is just one example; the number of Ic's and the number of IJ-de-frames are also arbitrary.
光電変換素子チップ４と、ＩＣチップ５の電極、リード
フレーム１．２．３などは、ワイヤボンディング６によ
って、相互に接続されている。The photoelectric conversion element chip 4, the electrodes of the IC chip 5, the lead frame 1.2.3, etc. are connected to each other by wire bonding 6.
リードフレーム１．２．３、光電変換素子チップ４、Ｉ
Ｃチップ５などの全体は、透明の樹脂でモールドする。Lead frame 1.2.3, photoelectric conversion element chip 4, I
The entire C chip 5 and the like is molded with transparent resin.
透明モールド体Ｔは、さらに外ケースをなすハクレンズ
の中へ入れ接着される。The transparent mold body T is further inserted into a black lens forming an outer case and adhered.
光電変換素子チップ４をマウントしたリードフレーム１
の断面形状を第２図によって説明する。Lead frame 1 on which photoelectric conversion element chip 4 is mounted
The cross-sectional shape of will be explained with reference to FIG.
リードフレーム１は、モールド体７の中に於て平坦では
なく、中間部に於て、光電変換素子チップ４を設ける方
向へ隆起している。これは、光電変換素子チップ４と、
光ファイバ端とを接近させるためである。The lead frame 1 is not flat inside the mold body 7, but is raised in the middle portion in the direction in which the photoelectric conversion element chip 4 is provided. This includes a photoelectric conversion element chip 4,
This is to bring the end of the optical fiber closer to each other.
隆起部８の中央−筒所をくぼませてあり、ここに光電変
換素子チップ４がマウントされている。The central cylindrical portion of the raised portion 8 is recessed, and the photoelectric conversion element chip 4 is mounted here.
凹所９の中心に充電変換素子チップ４が位置するように
する。The charge conversion element chip 4 is positioned at the center of the recess 9.
凹所９の周囲のリードフレーム１の壁面ｌは凹面鏡とし
て機能する。例えば発光ダイオードの場合、光は広い角
度範囲に拡って出射される。しかし、拡散した光もリー
ドフレームの凹所９の壁面で反射され、相対する光ファ
イバの端面上に収束して入射する。The wall surface l of the lead frame 1 around the recess 9 functions as a concave mirror. For example, in the case of a light emitting diode, light is emitted over a wide angular range. However, the diffused light is also reflected by the wall surface of the recess 9 of the lead frame, and is converged and incident on the opposing end surface of the optical fiber.
発光ダイオードにしても点光源ではないがら、凹面鏡と
しての凹所９の壁面の作用で、光線を一箇所に集光する
ことはできない。しかし、光ファイバのコアは少なくと
も直径が５０〜１００μｍ程度あるので、ファイバ端面
の一箇所に収束しなければならない、ということはない
。Although a light emitting diode is not a point light source, the wall surface of the recess 9 acts as a concave mirror, making it impossible to condense light rays to one place. However, since the core of an optical fiber has a diameter of at least about 50 to 100 μm, it is not necessary to converge on one point on the fiber end face.
受光素子の場合も同様で、受光面が広いので、光ファイ
バからの出射光を、凹所９０反射によって、効率よく受
光面へ集中させることができる。The same applies to the light receiving element, and since the light receiving surface is wide, the light emitted from the optical fiber can be efficiently concentrated on the light receiving surface by reflection from the recess 90.
第３図は他の実施例を示す光モジュールの断面図である
。FIG. 3 is a sectional view of an optical module showing another embodiment.
これは、光電変換素子チップ４の直上のモール１体が、
他の部分より薄くなっている。この窪み１０の部分に、
光ファイバの先端を接触させるようにする。光ファイバ
端と、光電変換素子チップの距離はさらに接近する。This means that one molding directly above the photoelectric conversion element chip 4 is
It is thinner than other parts. In this depression 10 part,
Bring the tips of the optical fibers into contact. The distance between the optical fiber end and the photoelectric conversion element chip becomes even closer.
さらに、光電変換素子の面積が広い場合は、透明モール
ド体がレンズとしての機能も果すようになるので、より
集光性が高揚する。Furthermore, when the area of the photoelectric conversion element is large, the transparent molded body also functions as a lens, so that the light gathering ability is further improved.
（１）効 果
リードフレームを隆起させて、光電変換素子チップと、
光ファイバの距離を短くしたので、結合効率が高才る。(1) Effect By raising the lead frame, the photoelectric conversion element chip and
Since the length of the optical fiber is shortened, the coupling efficiency is high.
さらに、隆起部に凹所を形成し、この中心（て光電変換
素子チップをマウントしであるから、凹面鏡の作用によ
り、集光できる。これによってさらに、光電変換素子チ
ップと光ファイバの結合効率が商才る。発光ダイオード
と、光ファイバの結合効率は、従来、極めて低いのがふ
つうであった。Furthermore, since a recess is formed in the raised part and the photoelectric conversion element chip is mounted at the center of the recess, light can be focused by the action of the concave mirror.This further increases the coupling efficiency between the photoelectric conversion element chip and the optical fiber. It's a business idea.The coupling efficiency between light emitting diodes and optical fibers has traditionally been extremely low.
発光ダイオードから出射される光は、広い角度範囲に拡
り、指向性に乏しいからである。This is because the light emitted from the light emitting diode spreads over a wide angular range and has poor directivity.
本発明に於ては、凹所の凹面鏡としての作用、及びレン
ズとしての作用により、発光ダイオードからの出射光を
集光し、光ファイバの端面へ効率よく入射させる事がで
きる。In the present invention, the concave portion functions as a concave mirror and as a lens, so that the light emitted from the light emitting diode can be condensed and made to efficiently enter the end face of the optical fiber.
光モジュールは、第１図に示すモールド体を、ハウジン
グ（図示せず）に入れ接着して完成する。The optical module is completed by placing the molded body shown in FIG. 1 into a housing (not shown) and gluing it together.
ハウジングも含めた全体の寸法は、例えば縦横１５朋以
内、高さが１０ ｍｙｓ以内である。The overall dimensions including the housing are, for example, within 15 mm in length and width and within 10 mys in height.
第１図は本発明の実施例に係る光モジュールのモールド
部のみの平面図。
第２図は光電変換素子をマウントしたリードフレームに
沿う縦断面図。
第３図１−を他の実施例を示すモールド部の縦断面図。
第４図１ｒｉ従来例に係る光モジュールのモールド部の
縦断面図。
１．２．３・・・−・・・リードフレーム４・・ ・
光電変換素子チップ
５ ・・−・・・・・ＩＣチップ
６・・・・・・・・ ワイヤボンティング７・・・・・
・・・モールド体
８・・・・・・・・・隆起部
９ ・・・・・・・−・凹 所
１０・・・ ・・−窪 み
発 明 者 沢 井 孝 火鉢 享
三
特許出願人 住友電気工業株式会社
第１図
第２図
第３図
第４図FIG. 1 is a plan view of only the mold portion of an optical module according to an embodiment of the present invention. FIG. 2 is a longitudinal cross-sectional view along the lead frame on which the photoelectric conversion element is mounted. FIG. 3 is a vertical cross-sectional view of the mold part showing another embodiment of FIG. 1-. FIG. 4 is a longitudinal sectional view of a mold portion of an optical module according to a conventional example. 1.2.3...-Lead frame 4...
Photoelectric conversion element chip 5...IC chip 6...Wire bonding 7...
・・・Mold body 8 ・・・・・・Protuberance 9 ・・・・・・・・・Recess 10 ・・・・・・Recess Inventor Takashi Sawai Hibachi Kyozo Patent Applicant Sumitomo Electric Industries, Ltd. Figure 1 Figure 2 Figure 3 Figure 4
Claims (2)
ドフレーム１の上にマウントされる光電変換素子チップ
４と、リードフレーム２、・・・上にマウントされて光
電変換素子チップ４の周辺回路を構成するＩＣデツプ５
と、リードフレーム１．２、・・・光電変換素子チップ
４、ＩＣチップ５の電極を接続するワイヤボンティング
６と、リードフレーム１．２、・・・光電変換素子デツ
プ４、ＩＣデツプ５を囲む透明のモールド体７と、モー
ルド体を囲み光ファイバと結合するだめのハウジングと
よりなり、フレーム１は中間に隆起部８があり、隆起部
８の一箇所に凹所９があって、凹所９に光電変換素子４
がマウントされている事を特徴とする光モジュール。(1) A plurality of lead frames 1.2, . IC depth 5 that makes up the circuit
, wire bonding 6 that connects the electrodes of the lead frame 1.2, . . . photoelectric conversion element chip 4, IC chip 5, and the lead frame 1.2, . . . photoelectric conversion element depth 4, IC depth 5. The frame 1 consists of a transparent molded body 7 surrounding the molded body and a housing that surrounds the molded body and connects the optical fiber. Photoelectric conversion element 4 at location 9
An optical module characterized by being mounted with.
に光ファイバを当接すべき窪み１０が設けられている特
許請求の範囲第ｆｉ１項記載の光モジュール。(2) Mold body 7 directly above the fourth photoelectric conversion element
The optical module according to claim 1, wherein the optical module is provided with a recess 10 against which an optical fiber is to be brought into contact.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58081090A JPS59205776A (en) | 1983-05-10 | 1983-05-10 | Optical module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58081090A JPS59205776A (en) | 1983-05-10 | 1983-05-10 | Optical module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59205776A true JPS59205776A (en) | 1984-11-21 |
Family
ID=13736687
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58081090A Pending JPS59205776A (en) | 1983-05-10 | 1983-05-10 | Optical module |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59205776A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001024281A1 (en) * | 1999-09-30 | 2001-04-05 | Osram Opto Semiconductors Gmbh & Co. Ohg | Optoelectronic component that comprises a reflector and method for producing said component |
| JP2009130359A (en) * | 2007-11-19 | 2009-06-11 | Iljin Semiconductor Co Ltd | Light-emitting diode device and method of manufacturing the same |
-
1983
- 1983-05-10 JP JP58081090A patent/JPS59205776A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001024281A1 (en) * | 1999-09-30 | 2001-04-05 | Osram Opto Semiconductors Gmbh & Co. Ohg | Optoelectronic component that comprises a reflector and method for producing said component |
| JP2009130359A (en) * | 2007-11-19 | 2009-06-11 | Iljin Semiconductor Co Ltd | Light-emitting diode device and method of manufacturing the same |
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