JPS5858824B2 - Optical coupling semiconductor device - Google Patents

Optical coupling semiconductor device

Info

Publication number
JPS5858824B2
JPS5858824B2 JP52061527A JP6152777A JPS5858824B2 JP S5858824 B2 JPS5858824 B2 JP S5858824B2 JP 52061527 A JP52061527 A JP 52061527A JP 6152777 A JP6152777 A JP 6152777A JP S5858824 B2 JPS5858824 B2 JP S5858824B2
Authority
JP
Japan
Prior art keywords
semiconductor light
recess
light emitting
receiving element
light receiving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52061527A
Other languages
Japanese (ja)
Other versions
JPS53145587A (en
Inventor
昇一 柿本
進 吉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP52061527A priority Critical patent/JPS5858824B2/en
Publication of JPS53145587A publication Critical patent/JPS53145587A/en
Publication of JPS5858824B2 publication Critical patent/JPS5858824B2/en
Expired legal-status Critical Current

Links

Description

【発明の詳細な説明】 この発明は、発光素子と受光素子とからなる光結合半導
体装置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an optically coupled semiconductor device comprising a light emitting element and a light receiving element.

最近新しい固体素子として、半導体発光素子と半導体受
光素子とを組み合わせてなる光結合半導体装置(ホトカ
プラ)が注目されている。
Recently, an optically coupled semiconductor device (photocoupler), which is a combination of a semiconductor light-emitting element and a semiconductor light-receiving element, has been attracting attention as a new solid-state element.

ホトカプラにおいては信号伝達が光によってなされ、入
出力間は電気的にアイソレーションされているので電位
の異なる部分の間での信号伝達に適している。
In a photocoupler, signal transmission is performed by light, and the input and output are electrically isolated, so it is suitable for signal transmission between parts with different potentials.

また出力側から入力側へのフィードバックがなく、信号
の伝達の方向性が優れている。
Furthermore, there is no feedback from the output side to the input side, and the directionality of signal transmission is excellent.

このような従来のホトカプラの構造を第1図によって説
明する。
The structure of such a conventional photocoupler will be explained with reference to FIG.

第1図において、10は発光側、20は受光側を示す。In FIG. 1, 10 indicates the light emitting side and 20 indicates the light receiving side.

発光側10において11は半導体発光素子であり、半導
体発光素子11の一方の電極12は金属リード13上に
固着されている。
On the light emitting side 10, 11 is a semiconductor light emitting element, and one electrode 12 of the semiconductor light emitting element 11 is fixed onto a metal lead 13.

半導体発光素子11の他方の電極14は、リード細線1
5により他の金属リード16と電気的に接続されている
The other electrode 14 of the semiconductor light emitting device 11 is connected to the thin lead wire 1
5, it is electrically connected to another metal lead 16.

受光側20において、21は半導体受光素子であり、こ
の半導体受光素子21の一方の電極22は、金属リード
23上に固着されており、他方の電極24はリード細線
25により、他の金属リード26と電気的に接続されて
いる。
On the light receiving side 20, 21 is a semiconductor light receiving element, one electrode 22 of this semiconductor light receiving element 21 is fixed on a metal lead 23, and the other electrode 24 is connected to another metal lead 26 by a thin lead wire 25. electrically connected to.

第1図では省略したが、半導体発光素子11と、半導体
受光素子21との間には通常屈折率の大きい透明な絶縁
物、例えばエポキシ樹脂やシリコン樹脂等が配置され、
半導体発光素子11から半導体受光素子21へ到達する
光束を増加させる工夫がなされる。
Although omitted in FIG. 1, a transparent insulator with a high refractive index, such as epoxy resin or silicone resin, is usually placed between the semiconductor light emitting element 11 and the semiconductor light receiving element 21.
Efforts are made to increase the luminous flux reaching the semiconductor light receiving element 21 from the semiconductor light emitting element 11.

発光側10の金属リード13と金属リード16との間に
電圧を印加すれば、半導体発光素子11内で光が発生す
る。
When a voltage is applied between the metal leads 13 and 16 on the light emitting side 10, light is generated within the semiconductor light emitting device 11.

これらの光は半導体発光素子11の表面(主面17)か
ら放射され、一部の光は半導体受光素子21へ到達する
These lights are emitted from the surface (principal surface 17) of the semiconductor light emitting device 11, and some of the light reaches the semiconductor light receiving device 21.

これらの光は半導体受光素子21で吸収され、電気的信
号となって受光側20の金属リード23と金属リード2
6との間で検出される。
These lights are absorbed by the semiconductor light receiving element 21 and become electrical signals between the metal lead 23 on the light receiving side 20 and the metal lead 2.
Detected between 6 and 6.

しかし、上述の従来の構造のホトカプラには次のような
欠点がある。
However, the photocouplers having the conventional structure described above have the following drawbacks.

まず半導体発光素子11内で発生した光は主面17から
ばかりではなく、両側面18からも点線で示すように外
部に放射されるが、これらの側面18から放射される光
は半導体受光素子21には照射されない。
First, light generated within the semiconductor light emitting device 11 is emitted to the outside not only from the main surface 17 but also from both side surfaces 18 as shown by dotted lines. is not irradiated.

また主面17から放射される光もすべて半導体受光素子
21に照射されるのではなく、一部だけが照射に用いら
れるにすぎない。
Further, not all of the light emitted from the principal surface 17 is irradiated onto the semiconductor light receiving element 21, but only a portion thereof is used for irradiation.

すなわち、光信号が発光側10から受光側20へ有効に
伝達されない。
That is, the optical signal is not effectively transmitted from the light emitting side 10 to the light receiving side 20.

さらに従来の構造のホトカプラでは、半導体発光素子1
1の組み立て(グイボンド、ワイヤボンド)と半導体受
光素子21の糺み立てとを独立に行い、その後、両者を
一体化させるので、絹み立て工程が複雑となり、両者の
位置合せが厄介である。
Furthermore, in a photocoupler with a conventional structure, the semiconductor light emitting device 1
1 (guibond, wire bond) and the gluing of the semiconductor light-receiving element 21 are performed independently, and then the two are integrated, which makes the gluing process complicated and the alignment of the two difficult.

この発明は、上述の点にかんがみなされたもので、半導
体発光素子から半導体受光素子へ有効に光信号の伝達が
行えるとともに、組み立て工程の簡単な光結合半導体装
置を提供するものである。
The present invention has been made in consideration of the above-mentioned points, and provides an optically coupled semiconductor device that can effectively transmit optical signals from a semiconductor light emitting element to a semiconductor light receiving element and that has a simple assembly process.

以下この発明について説明する。This invention will be explained below.

第2図a、 bはこの発明の第1の実施例を示すもので
ある。
Figures 2a and 2b show a first embodiment of the invention.

第2図aは蓋を取り除いた平面図、第2図すは断面図を
示す。
Figure 2a shows a plan view with the lid removed, and Figure 2a shows a sectional view.

第2図a、 bにおいて31は絶縁基板であり、この
絶縁基板31には所要形状の凹部32が形成されている
In FIGS. 2a and 2b, 31 is an insulating substrate, and a recess 32 of a desired shape is formed in this insulating substrate 31. As shown in FIG.

凹部32の側壁の各表面33には光反射部材34が設け
られている。
A light reflecting member 34 is provided on each surface 33 of the side wall of the recess 32 .

そして金属リード13. 16.23.26は絶縁基板
31を貫通し、そのヘッドが凹部32の底面にあるよう
に形成されている。
and metal lead 13. 16, 23, and 26 are formed so as to penetrate through the insulating substrate 31 and have their heads located on the bottom surface of the recess 32.

その他発光側10、受光側20は第1図のものと同様に
形成されている。
In addition, the light emitting side 10 and the light receiving side 20 are formed in the same manner as in FIG.

41はその下面42に光反射部材43が設けられた蓋で
あり、この蓋41は凹部32を橋絡するように配置され
ている。
Reference numeral 41 denotes a lid having a light reflecting member 43 provided on its lower surface 42, and this lid 41 is arranged so as to bridge the recess 32.

次に動作について説明する。Next, the operation will be explained.

発光側10の金属リード13と金属リード16との間に
電圧を印加すれば、半導体発光素子11内で光が発生す
る。
When a voltage is applied between the metal leads 13 and 16 on the light emitting side 10, light is generated within the semiconductor light emitting device 11.

これらの光は半導体発光素子11の主面17、前側面1
8F、後側面18B、左側面18L、右側面18Rから
放射される。
These lights are transmitted to the main surface 17 and front side surface 1 of the semiconductor light emitting device 11.
8F, rear side 18B, left side 18L, and right side 18R.

これら4個面のうち、前側面18Fから放射される光は
直接半導体受光素子21へ、左右側面18L、18Rか
ら放射される光は四部32の側壁の表面33に設けられ
た光反射部材34で反射されて半導体受光素子21へ、
主面17から放射される光は蓋41の下面42に設けら
れた光反射部材43で反射されて半導体受光素子21へ
照射される。
Of these four surfaces, the light emitted from the front side surface 18F is directly directed to the semiconductor light receiving element 21, and the light emitted from the left and right side surfaces 18L and 18R is emitted from the light reflecting member 34 provided on the surface 33 of the side wall of the four parts 32. reflected to the semiconductor light receiving element 21,
The light emitted from the main surface 17 is reflected by a light reflecting member 43 provided on the lower surface 42 of the lid 41 and is irradiated onto the semiconductor light receiving element 21 .

半導体受光素子21に照射された光は吸収されて電気的
信号に変換され、受光側20の金属リード23と金属リ
ード26との間で検出される。
The light irradiated onto the semiconductor light receiving element 21 is absorbed and converted into an electrical signal, which is detected between the metal lead 23 and the metal lead 26 on the light receiving side 20.

このようにこの発明による光結合半導体装置では半導体
発光素子11の主面17および各側面18F、18L、
18Rから放射される光が有効に半導体受光素子21に
到達し、光伝達効率が大きい。
As described above, in the optically coupled semiconductor device according to the present invention, the main surface 17 and each side surface 18F, 18L,
The light emitted from 18R effectively reaches the semiconductor light receiving element 21, and the light transmission efficiency is high.

さらに凹部32内に透明な絶縁物質、例えばエポキシ樹
脂やシリコン樹脂を充填しであるので(図示は省略)屈
折率整合により、ここが空気である場合よりもさらに有
効に半導体発光素子11から半導体受光素子21へ光が
伝達される。
Furthermore, since the recess 32 is filled with a transparent insulating material such as epoxy resin or silicone resin (not shown), the refractive index matching allows the semiconductor light to be received from the semiconductor light emitting element 11 more effectively than when the recess is filled with air. Light is transmitted to element 21.

第3図a、 bはこの発明による光結合半導体装置の第
2の実施例である。
3a and 3b show a second embodiment of the optically coupled semiconductor device according to the present invention.

第3図aは白色の蓋41′を取り除いた平面図、第3図
すは断面図である。
FIG. 3a is a plan view with the white lid 41' removed, and FIG. 3 is a sectional view.

第3図の各符号で第2図の符号と同一のものは第2図に
おけるそれにそれぞれ相当する。
Each reference numeral in FIG. 3 that is the same as that in FIG. 2 corresponds to that in FIG. 2, respectively.

第3図a。bにおいて31′は白色の絶縁基板であり、
この白色の絶縁基板31′には凹部32が形成されてお
り、この凹部32内に半導体発光素子11と半導体受光
素子21が配置されている。
Figure 3a. In b, 31' is a white insulating substrate,
A recess 32 is formed in this white insulating substrate 31', and a semiconductor light emitting element 11 and a semiconductor light receiving element 21 are arranged within this recess 32.

凹部32の側壁の表面33は絶縁基板31′自体が白色
であるので大きな光反射性を有する。
Since the insulating substrate 31' itself is white, the surface 33 of the side wall of the recess 32 has high light reflectivity.

第3図において前側面18Fから放射される光は直接半
導体受光素子21へ、左側面18L、右側面18Rから
放射される光は凹部32の側壁の表面33で反射して半
導体受光素子21へ、主面17から放射される光は白色
の蓋41′の光反射性を有する下面42で反射して半導
体受光素子21へ照射される。
In FIG. 3, the light emitted from the front side 18F is directly directed to the semiconductor light receiving element 21, and the light emitted from the left side 18L and right side 18R is reflected by the surface 33 of the side wall of the recess 32 and is directed to the semiconductor light receiving element 21. The light emitted from the main surface 17 is reflected by the light-reflecting lower surface 42 of the white lid 41' and is irradiated onto the semiconductor light-receiving element 21.

このように、第3図のこの発明による光結合半導体装置
でも、半導体発光素子11の主面17および各側面18
F、18L、18Rから放射される光が有効に半導体受
光素子21へ到達し、光伝達効率が大きい。
In this way, also in the optically coupled semiconductor device according to the present invention shown in FIG.
The light emitted from F, 18L, and 18R effectively reaches the semiconductor light receiving element 21, and the light transmission efficiency is high.

第2図の場合と同様、四部32内に透明な絶縁物質、例
えばエポキシ樹脂やシリコン樹脂を充填しであるので屈
折率整合により、ここが空気である場合よりもさらに有
効に半導体発光素子11から半導体受光素子21へ光が
伝達される。
As in the case of FIG. 2, since the four parts 32 are filled with a transparent insulating material, such as epoxy resin or silicone resin, the semiconductor light emitting element 11 can be more effectively removed from the semiconductor light emitting element 11 by matching the refractive index. Light is transmitted to the semiconductor light receiving element 21.

第4図はこの発明による光結合半導体装置の第3の実施
例を示すもので、絶縁基板31に複数個、この実施例で
は3個の凹部32を設け、各凹部32ごとに第3図に示
す光結合半導体装置を構成したものである。
FIG. 4 shows a third embodiment of the optically coupled semiconductor device according to the present invention, in which a plurality of recesses 32, three in this embodiment, are provided in an insulating substrate 31, and each recess 32 is shown in FIG. The optically coupled semiconductor device shown in FIG.

この実施例では各半導体発光素子11と各半導体受光素
子21の対が1つの凹部32内に配置され、凹部32の
開口上を蓋41が覆っているので、ある四部32内の半
導体発光素子11から放射される光信号はその凹部32
内の半導体受光素子21にのみ照射され、他の凹部32
内の半導体受光素子21に到達することはなく、従つて
誤動作が防止できる。
In this embodiment, a pair of each semiconductor light emitting element 11 and each semiconductor light receiving element 21 is arranged in one recess 32, and the lid 41 covers the opening of the recess 32. The optical signal emitted from the recess 32
The light is irradiated only to the semiconductor light-receiving element 21 inside, and the other recesses 32 are irradiated.
The light does not reach the semiconductor light-receiving element 21 inside, so malfunctions can be prevented.

なお、上述の実施例では凹部32内に1個の半導体発光
素子11と1個の半導体受光素子21を配置したが、複
数個の半導体発光素子11や複数個の半導体受光素子2
1を1グループとして配置してもよい。
In the above-described embodiment, one semiconductor light emitting element 11 and one semiconductor light receiving element 21 were arranged in the recess 32, but a plurality of semiconductor light emitting elements 11 and a plurality of semiconductor light receiving elements 2
1 may be arranged as one group.

また凹部32内にはエポキシ樹脂やシリコン樹脂以外の
他の透明な屈折率の大きい絶縁物質を充填しても、半導
体発光素子11から半導体受光素子21へ有効に光を伝
達させることができる。
Furthermore, even if the recess 32 is filled with a transparent insulating material other than epoxy resin or silicone resin having a high refractive index, light can be effectively transmitted from the semiconductor light emitting element 11 to the semiconductor light receiving element 21.

半導体発光素子11としては発光ダイオード、電界発光
素子の外、半導体レーザ等を配置してもよい。
As the semiconductor light emitting device 11, in addition to a light emitting diode and an electroluminescent device, a semiconductor laser or the like may be arranged.

以上詳細に説明したようにこの発明の光結合半導体装置
では、半導体発光素子と半導体受光素子とを同一平面上
、例えば、凹部底面に配置することができるので、組み
立て工程が著しく簡略化される。
As described above in detail, in the optically coupled semiconductor device of the present invention, the semiconductor light emitting element and the semiconductor light receiving element can be arranged on the same plane, for example, on the bottom surface of the recess, so that the assembly process is significantly simplified.

また、凹部を蓋で被い、凹部の開口部には透明絶縁物質
を充填しであるので、内部の半導体発光素子や半導体受
光素子がしっかりと固定されるばかりでなく、半導体発
光素子から半導体受光素子への光の伝達効率を大きくす
ることができる等の利点がある。
In addition, since the recess is covered with a lid and the opening of the recess is filled with a transparent insulating material, not only the semiconductor light emitting element and the semiconductor light receiving element inside are firmly fixed, but also the semiconductor light receiving element is received from the semiconductor light emitting element. There are advantages such as being able to increase the efficiency of transmitting light to the element.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の光結合半導体装置の構成断面図、第2図
a、bはこの発明による光結合半導体装置の第1の実施
例を示す蓋を取除いた平面図および断面図、第3図a、
bはこの発明による光結合半導体装置の第2の実施
例を示す蓋を取除いた平面図および断面図、第4図はこ
の発明による光結合半導体装置の第3の実施例を示す断
面図である。 図中、10は発光側、11は半導体発光素子、12.1
4は電極、13.16は金属リード、15はリード細線
、17は主面、18F、18L、18Rは側面、20は
受光側、21は半導体受光素子、22.24は電極、2
3.26は金属リード、25はリード細線、31は絶縁
基板、31′は白色の絶縁基板、32は凹部、33は側
壁の表面、34は光反射部材、41は蓋、41′は白色
の蓋、42は下面、43は光反射部材である。 なお、図中の同一符号は同一または相当部分を示す。
FIG. 1 is a cross-sectional view of the structure of a conventional optically coupled semiconductor device, FIGS. Figure a,
b is a plan view and a cross-sectional view with the lid removed showing a second embodiment of the optically coupled semiconductor device according to the present invention, and FIG. 4 is a cross-sectional view showing a third embodiment of the optically coupled semiconductor device according to the present invention. be. In the figure, 10 is a light emitting side, 11 is a semiconductor light emitting element, 12.1
4 is an electrode, 13.16 is a metal lead, 15 is a thin lead wire, 17 is a main surface, 18F, 18L, 18R are side surfaces, 20 is a light receiving side, 21 is a semiconductor light receiving element, 22.24 is an electrode, 2
3.26 is a metal lead, 25 is a thin lead wire, 31 is an insulating substrate, 31' is a white insulating substrate, 32 is a recess, 33 is a side wall surface, 34 is a light reflecting member, 41 is a lid, 41' is a white insulating substrate The lid, 42 is a lower surface, and 43 is a light reflecting member. Note that the same reference numerals in the figures indicate the same or corresponding parts.

Claims (1)

【特許請求の範囲】[Claims] 1 絶縁基板に所要形状の凹部を形成し、この凹部内に
少なくとも一つの半導体発光素子と少なくとも一つの半
導体受光素子とを配置し、前記凹部に蓋を被せるととも
に、前記凹部の内面および蓋の内面の所要部を光反射部
材で被い、さらに前記凹部の開口部に透明絶縁物質を充
填したことを特徴とする光結合半導体装置。
1. A recess of a desired shape is formed in an insulating substrate, at least one semiconductor light emitting element and at least one semiconductor light receiving element are arranged in the recess, a lid is placed over the recess, and the inner surface of the recess and the inner surface of the lid are A light-coupled semiconductor device characterized in that a required portion of the recess is covered with a light reflecting member, and an opening of the recess is filled with a transparent insulating material.
JP52061527A 1977-05-25 1977-05-25 Optical coupling semiconductor device Expired JPS5858824B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52061527A JPS5858824B2 (en) 1977-05-25 1977-05-25 Optical coupling semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52061527A JPS5858824B2 (en) 1977-05-25 1977-05-25 Optical coupling semiconductor device

Publications (2)

Publication Number Publication Date
JPS53145587A JPS53145587A (en) 1978-12-18
JPS5858824B2 true JPS5858824B2 (en) 1983-12-27

Family

ID=13173655

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52061527A Expired JPS5858824B2 (en) 1977-05-25 1977-05-25 Optical coupling semiconductor device

Country Status (1)

Country Link
JP (1) JPS5858824B2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6242270U (en) * 1985-08-30 1987-03-13
US7847301B2 (en) * 2004-12-08 2010-12-07 Agilent Technologies, Inc. Electronic microcircuit having internal light enhancement
TWI684268B (en) * 2017-04-20 2020-02-01 億光電子工業股份有限公司 Sensor module and method of manufacturing the same

Also Published As

Publication number Publication date
JPS53145587A (en) 1978-12-18

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