JPS59205742A - Semiconductor cooling device - Google Patents
Semiconductor cooling deviceInfo
- Publication number
- JPS59205742A JPS59205742A JP8188783A JP8188783A JPS59205742A JP S59205742 A JPS59205742 A JP S59205742A JP 8188783 A JP8188783 A JP 8188783A JP 8188783 A JP8188783 A JP 8188783A JP S59205742 A JPS59205742 A JP S59205742A
- Authority
- JP
- Japan
- Prior art keywords
- insulating sheet
- blocks
- cooling device
- insulating
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
Description
【発明の詳細な説明】
この発明は半導体冷却装置に係り、特に半導体素子の絶
縁性、損失熱を効率良く伝達でき、組立作業の容易化が
図れる絶縁ディスクに関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor cooling device, and more particularly to an insulating disk that can efficiently transfer heat loss and insulate semiconductor elements, and facilitate assembly work.
従来この種の装置として第1図に示すものがあった。図
において、1は平形半導体素子、2a。A conventional device of this type is shown in FIG. In the figure, 1 is a flat semiconductor element and 2a.
2 、bはこの平形半導体素子1の陽極および陰極面に
当接接続し電気を取り出す端子板、3はこの端子板2a
と上記平形半導体1との間に介在された絶縁シートであ
って、該素子1と上記冷却ブロック4とを電気的に絶縁
する。5は絶縁座、6は圧接塵、7はバネ板、8は締付
ボルト、9はボ/l/ト、10はこのポルト10と圧接
塵6との間に配置された金属ボールである。2 and b are terminal plates that contact and connect to the anode and cathode surfaces of this flat semiconductor element 1 to extract electricity; 3 is this terminal plate 2a;
and the flat semiconductor 1, and electrically insulates the element 1 and the cooling block 4. 5 is an insulating seat, 6 is a pressurized dust, 7 is a spring plate, 8 is a tightening bolt, 9 is a bolt, and 10 is a metal ball arranged between this port 10 and the pressurized dust 6.
次に動作について説明する。Next, the operation will be explained.
通常、平形半導体素子1に通電すると該素子1の内部損
失により熱が発生する。この損失熱は該素子1の陽極お
よび陰極面より熱放散されるため、冷却ブロック4を素
子1の両極面か、いずれか一方に圧接接続して損失熱を
空気等の二次冷却媒体に熱交換する。この際、第1図に
示す絶縁シート3のない場合は、冷却ブロック4は上記
素子1に直接、圧接接続しているために、該素子1の電
位を帯びる事になるので、電気絶縁劣化あるいは危険防
止用に筐体構造のキユービクル内に収納される場合が多
かった。しかしキユービクル内の温度上昇を抑制するた
めに、外気を取り入れる必要があり、保守1点検等に問
題があった。そこで、最近、第1図に示すように、平形
半導体素子1と冷却ブロック4との電気的な絶縁には、
筐体キユービクルの外部に配置された絶縁シート3で行
う方式が行なわれている。この絶縁シート3は電気的な
絶縁と該素子1の損失熱を効率良く冷却ブロック4に伝
達できる優れた材質で、極薄形で、円形または四角形等
のシート状に形成することが必要である。Normally, when current is applied to the flat semiconductor element 1, heat is generated due to internal loss of the element 1. Since this heat loss is dissipated from the anode and cathode surfaces of the element 1, the cooling block 4 is pressure welded to either the pole surfaces of the element 1, or to either one of the pole surfaces, and the loss heat is transferred to a secondary cooling medium such as air. Exchange. At this time, if there is no insulating sheet 3 as shown in FIG. 1, the cooling block 4 is directly press-connected to the element 1, so it will be charged with the potential of the element 1, which may cause electrical insulation to deteriorate or In order to prevent danger, they were often housed in a cubicle with a housing structure. However, in order to suppress the temperature rise inside the cubicle, it was necessary to bring in outside air, which caused problems in maintenance and inspections. Recently, as shown in FIG. 1, electrical insulation between the flat semiconductor element 1 and the cooling block 4 has been improved.
A method is used in which this is done using an insulating sheet 3 placed outside the housing cubicle. This insulating sheet 3 is made of an excellent material that can provide electrical insulation and efficiently transmit the heat loss of the element 1 to the cooling block 4, and must be extremely thin and formed into a circular or rectangular sheet shape. .
従来の半導体冷却装置は以上のように構成されているの
で、絶縁に際して極薄形の絶縁シート3を冷却ブロック
4と平形半導体素子1間に挿入圧接しなければならず、
冷却ブロック4の圧接面の面加工および組立作業、例え
ば、素子1と絶縁シート3のセンター合せ、接触熱抵抗
を小さくするための導電性グリスの塗布などが非常に困
難であり、また絶縁シート3は極薄のためクラック防止
のための注意などで取扱いが極めて難しい等の欠点があ
った。Since the conventional semiconductor cooling device is constructed as described above, the ultra-thin insulating sheet 3 must be inserted and pressed between the cooling block 4 and the flat semiconductor element 1 for insulation.
It is extremely difficult to process the press-contact surface of the cooling block 4 and assemble it, such as centering the element 1 and the insulating sheet 3, and applying conductive grease to reduce contact thermal resistance. Because it is extremely thin, it has the disadvantage that it is extremely difficult to handle, as care must be taken to prevent cracks.
この発明は上記のような従来のものの欠点な除去するた
めになされたもので、絶縁シートの両正接面に銅、アル
ミニウム等のブロックを例工ばロー付またハンダ付等に
より接着し、ディスク状に一体に形成することにより組
立作業性の向上及び熱伝導性向上の信頼性が高い半導体
冷却装置を提供することを目的としている。This invention was made to eliminate the above-mentioned drawbacks of the conventional method. Blocks of copper, aluminum, etc. are bonded to both tangential surfaces of an insulating sheet by brazing or soldering, etc., and a disc-shaped The object of the present invention is to provide a highly reliable semiconductor cooling device that improves assembly workability and thermal conductivity by integrally forming the semiconductor cooling device.
以下、この発明の一実施例を図について説明する。第2
図、第3図において、2は上述の絶縁シートであって例
えばセラミック等で形成されている。11a、llbは
この絶縁シート20両圧接面にロー付ハンダ付は等によ
って固着された銅。An embodiment of the present invention will be described below with reference to the drawings. Second
In the drawings and FIG. 3, reference numeral 2 denotes the above-mentioned insulating sheet, which is made of, for example, ceramic. 11a and llb are copper pieces fixed to both pressure-contact surfaces of the insulating sheet 20 by brazing, soldering, or the like.
アルミニューム等のブロック、12a、12bはロー付
またはハンダ付面、13はこのブロック11a 、11
bに形成され、平形半導体素子1とのセンター合せ用
の穴である。Blocks such as aluminum, 12a and 12b are brazed or soldered surfaces, and 13 are blocks 11a and 11
This is a hole formed in b for center alignment with the flat semiconductor element 1.
以上の構成によれば、厚さの薄い絶縁シート2とこれに
ロー付、ハンダ付は固着されたブロック11a、11b
とによって一体化した絶縁ディスクが構成されることと
なる。かかる構造によって平形半導体素子1と冷却ブロ
ック4との電気的な絶縁および該素子1の損失熱の伝達
を極めて効率よく行うことができる。また、従来、絶縁
シート2の厚みが1〜2 mm程度であり、しかも平形
半導体素子1と冷却ブロック4との間の圧接力は100
0〜4oooKy程度と極めて大きいために、圧接面へ
の塵埃等の不純物の付着等により絶縁シートの破損や組
合せによる絶縁シート2両面の接触熱抵抗の増加などの
欠点が生じていたが、絶縁シート2に銅、アルミニウム
等のブロック11a、11bを固着一体化したので、か
かる問題は確実に解消できる。さらに上記ブロック11
a、11bにセンター合せ用の穴13を形成したので、
組立作業時に従来のように絶縁シート2のセンター合せ
の困難、偏差、捩れ等は生ずることなく、簡単に絶縁シ
ート2の挿着が行なえる。しかも、この穴13は、絶縁
シート2と上記ブロック11a、11bをロー付または
ハンダ付の時、接触面の気泡の逃げ口となり、密着性の
良い接触面を得ることが出来るため、接触熱抵抗の低い
熱伝導性の良い絶縁ディスクを製作するのに役立つ。According to the above configuration, the thin insulating sheet 2 and the blocks 11a, 11b that are brazed or soldered to the thin insulating sheet 2 are fixed.
An integrated insulating disk will be constructed. With this structure, electrical insulation between the flat semiconductor element 1 and the cooling block 4 and loss heat transfer of the element 1 can be achieved extremely efficiently. Furthermore, conventionally, the thickness of the insulating sheet 2 is about 1 to 2 mm, and the pressure force between the flat semiconductor element 1 and the cooling block 4 is 100 mm.
Due to the extremely large size of approximately 0 to 4oooKy, there were drawbacks such as damage to the insulating sheet due to the adhesion of dust and other impurities to the pressure contact surface, and an increase in contact thermal resistance on both sides of the insulating sheet when combined. Since the blocks 11a, 11b made of copper, aluminum, etc. are fixedly integrated with the block 2, this problem can be reliably solved. Furthermore, the above block 11
Since holes 13 for center alignment were formed in a and 11b,
During assembly work, the insulating sheet 2 can be easily inserted and installed without causing difficulty in centering the insulating sheet 2, deviation, twisting, etc. as in the conventional case. Moreover, when the insulating sheet 2 and the blocks 11a, 11b are brazed or soldered, the holes 13 serve as an escape port for air bubbles on the contact surface, and a contact surface with good adhesion can be obtained, resulting in a contact thermal resistance. It is useful for producing insulating disks with low thermal conductivity.
第4図はこの発明の他の実施例を示し、平形半導体装置
の一部を構成する回路中にこの発明を適用したものであ
る。図においてla、ibは大電流を流す主サイリスタ
であって、例えば1000Aクラスの平形半導体素子が
用いられている。14a、j4bは主サイリスタ1a、
1bに逆並列に接続され、無効を流をバイパスする補助
ダイオードであって、例えば300八クラスの平形半導
体素子が用いられる。15a、15bはスナバ抵抗、1
6a、16bはスナバコンデンサ、17 a 、17b
はスナバ−ダイオードである。そしてこのスナバ−ダイ
オード17a、17bのような比較的小容量の素子は損
失熱も小さいので、上記実施例の絶縁シート2に接着さ
れた同電位の鋼材等に取付可能である。FIG. 4 shows another embodiment of the present invention, in which the present invention is applied to a circuit constituting a part of a flat semiconductor device. In the figure, la and ib are main thyristors through which a large current flows, and flat semiconductor elements of, for example, 1000 A class are used. 14a, j4b are main thyristors 1a,
An auxiliary diode connected in antiparallel to 1b to bypass the reactive current, for example a flat semiconductor element of the 3008 class, is used. 15a and 15b are snubber resistors, 1
6a, 16b are snubber capacitors, 17a, 17b
is a snubber diode. Since the snubber diodes 17a and 17b, which have relatively small capacitance, have a small loss of heat, they can be attached to a steel material having the same potential bonded to the insulating sheet 2 of the above embodiment.
第5図および第6図もこの発明の他の実施例を示す。図
に示すような上記スナバ−ダイオード等を取付ける取付
穴18を備えた銅、アルミニウム等のブロック19を絶
縁シート2にロー付またはハンダ付けした絶縁ディスク
である。18はスバナーダイオード取付用のボルト穴、
20は平形半導体素子の陽極および陰極面の電気取出し
用のボルトであり、上述と同様の効果を有する。FIGS. 5 and 6 also show other embodiments of the invention. It is an insulating disk in which a block 19 of copper, aluminum, etc., having a mounting hole 18 for mounting the snubber diode, etc., as shown in the figure, is brazed or soldered to an insulating sheet 2. 18 is the bolt hole for installing the Svaner diode,
Numeral 20 is a bolt for taking out electricity from the anode and cathode surfaces of the flat semiconductor element, and has the same effect as described above.
以上のようにこの発明によれば、絶縁シートと銅、アル
ミニウム等のブロックとを一体化した絶縁ディスクに構
成したので、熱伝導率が飛躍的に向上し、しかも組立作
業等が極めて簡単となり、信頼性の高い半導体冷却装置
が得られる効果がある。As described above, according to the present invention, since the insulating disk is formed by integrating the insulating sheet and the block made of copper, aluminum, etc., the thermal conductivity is dramatically improved, and the assembly work etc. is extremely simple. This has the effect of providing a highly reliable semiconductor cooling device.
第1図は従来の半導体冷却装置の側面図、第2図はこの
発明の一実施例の平面図、第3図は第2図のA−A線縦
断面図、第4図は一般的平形半導体装置の一部を構成す
る半導体回路にこの発明を適用した他の実施例、第5図
はこの発明の他の実施例、第6図は第5図のB−Bi縦
断面図を示す。
1・・・半導体素子(平形半導体素子)、3・・・絶縁
シート、4・・・冷却片、11a、1lb−銅、アルミ
ニウム等のブロック。
図中、同一符号は同−又は相当部分を示す。
Φ
第 2 図
第 3 図
第 4 囚
第 5 図
第 6 (2)
1b
手続補正書(自発)
581021
昭和 年 月 日
特許庁長官殿
3、補正をする者
事件との関係 特許出願人
代表者片山仁へ部
4、代理人
−9
−・・・・′1゛\
5、補正の対象
明細書の発明の詳細な説明の欄
6、補正の内容
明細書第3頁第3行目から第5行目[筐体キユービクル
の外部に配置された絶縁シート6で行う方式」とあるの
を「冷却ブロックを素子1と電気的に絶縁し筐体キユー
ビクルの外部に配置する方式」と補正する。
以上Fig. 1 is a side view of a conventional semiconductor cooling device, Fig. 2 is a plan view of an embodiment of the present invention, Fig. 3 is a longitudinal sectional view taken along line A-A in Fig. 2, and Fig. 4 is a general flat type. Another embodiment in which the present invention is applied to a semiconductor circuit constituting a part of a semiconductor device, FIG. 5 shows another embodiment of the present invention, and FIG. 6 shows a B-Bi longitudinal cross-sectional view of FIG. 5. DESCRIPTION OF SYMBOLS 1... Semiconductor element (flat semiconductor element), 3... Insulating sheet, 4... Cooling piece, 11a, 1lb-block of copper, aluminum, etc. In the figures, the same reference numerals indicate the same or corresponding parts. Φ Fig. 2 Fig. 3 Fig. 4 Prisoner No. 5 Fig. 6 (2) 1b Procedural amendment (voluntary) 581021 Showa year Date Date Mr. Commissioner of the Japan Patent Office 3. Relationship with the person making the amendment Patent applicant representative Katayama Part 4, Agent-9 -...'1゛\ 5, Column 6 for detailed explanation of the invention in the specification subject to amendment, Lines 3 to 5 on page 3 of the specification of the contents of the amendment The line ``method performed using an insulating sheet 6 placed outside the housing cubicle'' is corrected to read ``a method in which the cooling block is electrically insulated from the element 1 and placed outside the housing cubicle''. that's all
Claims (1)
却を行う半導体冷却装置において、上記半導体素子と上
記冷却片との間に絶縁シートの両面に銅、アルミニウム
等のブロックを固着して一体化された絶縁ディスクを配
置したことを特徴とする半導体冷却装置。 (2)絶縁ディスクの銅、アルミニウム等のブロックに
センター合せ用の穴を設けたことを特徴とする特許請求
の範囲第1項記載の半導体冷却装置。[Scope of Claims] A semiconductor cooling device that performs cooling by placing a cooling piece in contact with one pole surface of a semiconductor element, wherein copper, aluminum, etc. are provided on both sides of an insulating sheet between the semiconductor element and the cooling piece. A semiconductor cooling device characterized by having an integrated insulating disk arranged by fixing the blocks. (2) The semiconductor cooling device according to claim 1, wherein a hole for centering is provided in the block of copper, aluminum, etc. of the insulating disk.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8188783A JPS59205742A (en) | 1983-05-09 | 1983-05-09 | Semiconductor cooling device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8188783A JPS59205742A (en) | 1983-05-09 | 1983-05-09 | Semiconductor cooling device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59205742A true JPS59205742A (en) | 1984-11-21 |
JPH0122986B2 JPH0122986B2 (en) | 1989-04-28 |
Family
ID=13758953
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8188783A Granted JPS59205742A (en) | 1983-05-09 | 1983-05-09 | Semiconductor cooling device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59205742A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5355981A (en) * | 1976-10-30 | 1978-05-20 | Shinetsu Chemical Co | Method of heat sinking for electric circuit |
JPS5722244U (en) * | 1980-07-10 | 1982-02-04 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5722244B2 (en) * | 1973-12-28 | 1982-05-12 |
-
1983
- 1983-05-09 JP JP8188783A patent/JPS59205742A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5355981A (en) * | 1976-10-30 | 1978-05-20 | Shinetsu Chemical Co | Method of heat sinking for electric circuit |
JPS5722244U (en) * | 1980-07-10 | 1982-02-04 |
Also Published As
Publication number | Publication date |
---|---|
JPH0122986B2 (en) | 1989-04-28 |
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