JPS5920468A - Vapor deposition method - Google Patents

Abstract

PURPOSE:To enable inexpensively the production of a vapor-deposited thin film which is stable for a long time, by maintaining the acceleration voltage for electron beams for heating and evaporating higher by a specified value or above than the acceleration voltage of an electron beam for heating and melting a vapor deposition material to be supplied to a vessel for an evaporating source. CONSTITUTION:A vessel 3 of an evaporating source is formed as a vessel having the long axis in parallel with the transverse direction of a substrate 2 under movement, and preventive plates 7, 7 for sticking of splashes are provided in the stage vapor depositing orthogonally a vapor deposition material evaporating from a vessel for an evaporating source 3 onto the substrate 2 while sending the substrate 2 through intermediate rolls 10 along a cylindrical can 1 then moving though a shaft 8 to a take up shaft 9. A wire-like vapor deposition material 4 to be supplied to said vessel 3 is heated and melted with an electron beam 6 for melting, and is further heated and evaporated with an electron beam 5 for evaporation. Said electron beams are so controlled as to satisfy the conditions EV- EM>5kV where the acceleration voltage of the beam 6 for melting is designated as EMkV and the acceleration voltage of the beam 5 for evaporation EVkV.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a vapor deposition method suitable for continuously and stably producing metal thin film type magnetic recording media and other functional thin films over a long period of time.

A technique for producing a medium suitable for high-density recording by diagonally depositing Go, Co alloy, etc. on a wide polymer molded substrate in an oxygen atmosphere is attracting attention as a new manufacturing technique for magnetic tape.

As the evaporation method used for this purpose, it is said that an electron beam heating type using a refractory container is preferable.

In order to perform continuous vapor deposition on a long object using this method, it is necessary to replenish the evaporation material.

In this case, focusing on the good controllability of the electron beam, there is a method that irradiates the feed material with the electron beam and the surface of the evaporated molten metal using a single electron beam generator by devising a deflection magnetic field. Naturally, there are two possible methods: 1) and a method in which a separate electron beam generator is provided exclusively for melting and supply.

However, there have been no concrete examples of these being implemented to date, so the present inventor conducted experiments on both, and found that in the former case, evaporation becomes unstable and the melting and supplying position is located between the evaporation region and the dissolution region. Since heating is performed by scanning a single electron beam, the area very close to the edge of the evaporation zone is affected by splash, resulting in many pinholes or holes in the substrate. It has become clear that manufacturing is more likely to be inconvenient, the latter increases equipment costs, and the vacuum discharge of the electron beam generator used exclusively for melting is likely to induce a full vacuum discharge of the electron beam generator used for evaporation. Ta.

The present invention was made to eliminate the latter drawback.
The gist is that if the acceleration voltage of the electron beam for evaporation is 1Ev (KV) and the acceleration voltage of the electron beam for melt supply is kEM[:KV], then Ev-EM)5 (K
The evaporation source is heated and evaporated under conditions that satisfy the relationship V).

Embodiments of the present invention will be specifically described below with reference to the drawings.

[Example 1] As shown in the figure, a cylindrical can 1 (diameter 1 m, width 7 oc
A polyethylene terephthalate film substrate 2 (thickness 1 o m) moving at a speed of 6 o m/min
, ts μm), a magnetic layer of coso% and N12o% was formed to a thickness of 0.1 μm at a minimum incident angle of 46° in an oxygen atmosphere of 2XIQTOrr. Evaporation source container 3
is made of ZrO2 and has an internal volume of 2.54. 1.5 mm diameter made of 80% Go and Ni2O% as vapor deposition material
The acceleration voltage Ev of the electron beam 5 for short evaporation is Ev = 30 (KV"J, and the acceleration voltage EMkEM of the electron beam 6 for melting is 20 (KV"J).
).

In the figure, 7 is an adhesion prevention plate for suppressing the influence of splash, 8 is a feeding shaft, 9 is a winding shaft, and 10 is an intermediate roller.

The deposition length was 9000 m, and the deposition was performed six times.

The table below summarizes the discharge conditions in the above examples.

(Left below) This table shows that although the frequency of discharge for melting is mainly affected by splash, the electron beam generator for evaporation is hardly affected by the discharge. be understood.

On the other hand, when the test was carried out at Ev=3oKV and EM=30KV, the effect was nearly 80%.

[Example 2] Instead of the wire in Example 1, a rod (diameter, ! 32mm) as the feed material, EV=40KV.

The experiment was carried out using ξ-3QKV with the other conditions being the same as in Example 1. The results are shown in the table below.

On the other hand, Ev = 401CV, 'Kw = 40K V
The discharge affected by f-implementation was 90%. A summary of the affected rates for many other combinations shows EV
There was a strong correlation with the value of -E, and almost no correlation with other conditions.

Note that the above is based on the basic condition that a material with little splash should be used.

Now, from the above, if Ev-EM is 5KV or more,
The proportion of discharges affected by the dissolution side among the discharges on the evaporation side is suppressed to 10% or less. And preferably 10KV
By providing the above difference, it can be said that mutual interference can be further suppressed.

Here, in order to improve energy efficiency whether for evaporation or melting, conditions are selected that make it easy to focus the beam, and a high acceleration voltage is selected, resulting in Conversely, when a discharge occurs, the energy of the discharge is large.For this reason, when multiple electron beam generators are used adjacently, mutual interference is likely to occur within the range of conditions described above. It is thought that there are.

As described above, according to the present invention, it is possible to perform vapor deposition stably.

Note that the present invention is sufficiently effective in the vapor deposition of other materials in combination with, for example, evaporation of Sl, ion blating, and the like.

[Brief explanation of the drawing]

The figure is a perspective view of the main parts of a vapor deposition apparatus used in an example of the present invention. 1... Cylindrical can, 2... Substrate, 3
... Evaporation source container, 5 ... Electron beam for evaporation, 6 ... Electron beam for dissolution. Name of agent: Patent attorney Toshio Nakao and one other person) 315 (O)

Claims (1)

[Claims] A vapor deposition material supplied in a container having a long axis in a direction parallel to the width direction of a moving substrate is heated and melted by irradiation with a melting electron beam, and further the melted vapor deposition material is When forming a deposited film on the substrate by heating and evaporating it by irradiation with an evaporation electron beam, the acceleration voltage of the melting electron beam is iEM [Kv], and the acceleration voltage of the evaporation electron beam is EvCKv]. Then, Ev-EM>5 (KV
A vapor deposition method characterized by satisfying the following conditions: