JPS59201422A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS59201422A
JPS59201422A JP7654483A JP7654483A JPS59201422A JP S59201422 A JPS59201422 A JP S59201422A JP 7654483 A JP7654483 A JP 7654483A JP 7654483 A JP7654483 A JP 7654483A JP S59201422 A JPS59201422 A JP S59201422A
Authority
JP
Japan
Prior art keywords
film
amorphous
sio2
amorphous silicon
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7654483A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0410221B2 (enExample
Inventor
Ryoichi Mukai
良一 向井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7654483A priority Critical patent/JPS59201422A/ja
Publication of JPS59201422A publication Critical patent/JPS59201422A/ja
Publication of JPH0410221B2 publication Critical patent/JPH0410221B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
JP7654483A 1983-04-30 1983-04-30 半導体装置の製造方法 Granted JPS59201422A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7654483A JPS59201422A (ja) 1983-04-30 1983-04-30 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7654483A JPS59201422A (ja) 1983-04-30 1983-04-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS59201422A true JPS59201422A (ja) 1984-11-15
JPH0410221B2 JPH0410221B2 (enExample) 1992-02-24

Family

ID=13608204

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7654483A Granted JPS59201422A (ja) 1983-04-30 1983-04-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS59201422A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6168980B1 (en) 1992-08-27 2001-01-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6214684B1 (en) * 1995-09-29 2001-04-10 Canon Kabushiki Kaisha Method of forming a semiconductor device using an excimer laser to selectively form the gate insulator
KR100954332B1 (ko) 2003-06-30 2010-04-21 엘지디스플레이 주식회사 액정표시소자와 그 제조방법
JP2018037628A (ja) * 2016-08-31 2018-03-08 国立大学法人島根大学 パターニング方法、薄膜トランジスタ作製方法、および、パターニング装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6168980B1 (en) 1992-08-27 2001-01-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US7329906B2 (en) 1992-08-27 2008-02-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US7416907B2 (en) 1992-08-27 2008-08-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6214684B1 (en) * 1995-09-29 2001-04-10 Canon Kabushiki Kaisha Method of forming a semiconductor device using an excimer laser to selectively form the gate insulator
KR100954332B1 (ko) 2003-06-30 2010-04-21 엘지디스플레이 주식회사 액정표시소자와 그 제조방법
JP2018037628A (ja) * 2016-08-31 2018-03-08 国立大学法人島根大学 パターニング方法、薄膜トランジスタ作製方法、および、パターニング装置

Also Published As

Publication number Publication date
JPH0410221B2 (enExample) 1992-02-24

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