JPS59198749A - 相補形電界効果トランジスタ - Google Patents

相補形電界効果トランジスタ

Info

Publication number
JPS59198749A
JPS59198749A JP58074274A JP7427483A JPS59198749A JP S59198749 A JPS59198749 A JP S59198749A JP 58074274 A JP58074274 A JP 58074274A JP 7427483 A JP7427483 A JP 7427483A JP S59198749 A JPS59198749 A JP S59198749A
Authority
JP
Japan
Prior art keywords
type
diffusion region
diffused region
substrate
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58074274A
Other languages
English (en)
Japanese (ja)
Inventor
Takeshi Tokuda
健 徳田
Sotohisa Asai
浅井　外壽
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP58074274A priority Critical patent/JPS59198749A/ja
Priority to DE19843414772 priority patent/DE3414772A1/de
Publication of JPS59198749A publication Critical patent/JPS59198749A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention
    • H10W20/021—

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP58074274A 1983-04-25 1983-04-25 相補形電界効果トランジスタ Pending JPS59198749A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP58074274A JPS59198749A (ja) 1983-04-25 1983-04-25 相補形電界効果トランジスタ
DE19843414772 DE3414772A1 (de) 1983-04-25 1984-04-18 Komplementaerer feldeffekttransistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58074274A JPS59198749A (ja) 1983-04-25 1983-04-25 相補形電界効果トランジスタ

Publications (1)

Publication Number Publication Date
JPS59198749A true JPS59198749A (ja) 1984-11-10

Family

ID=13542371

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58074274A Pending JPS59198749A (ja) 1983-04-25 1983-04-25 相補形電界効果トランジスタ

Country Status (2)

Country Link
JP (1) JPS59198749A (cg-RX-API-DMAC10.html)
DE (1) DE3414772A1 (cg-RX-API-DMAC10.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3743930A1 (de) * 1987-12-23 1989-07-06 Siemens Ag Integrierte schaltung mit "latch-up"-schutzschaltung in komplementaerer mos-schaltungstechnik
JP3307481B2 (ja) * 1993-11-05 2002-07-24 三菱電機株式会社 半導体装置
DE4405631C1 (de) * 1994-02-22 1995-07-20 Bosch Gmbh Robert Integriertes Bauelement
CN110534512B (zh) * 2019-09-07 2023-02-07 电子科技大学 一种抗闩锁版图结构

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5387181A (en) * 1977-01-11 1978-08-01 Sanyo Electric Co Ltd Complementary type mos transistor
JPS5843559A (ja) * 1981-09-08 1983-03-14 Mitsubishi Electric Corp 相補型半導体装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4035826A (en) * 1976-02-23 1977-07-12 Rca Corporation Reduction of parasitic bipolar effects in integrated circuits employing insulated gate field effect transistors via the use of low resistance substrate contacts extending through source region

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5387181A (en) * 1977-01-11 1978-08-01 Sanyo Electric Co Ltd Complementary type mos transistor
JPS5843559A (ja) * 1981-09-08 1983-03-14 Mitsubishi Electric Corp 相補型半導体装置

Also Published As

Publication number Publication date
DE3414772C2 (cg-RX-API-DMAC10.html) 1987-10-08
DE3414772A1 (de) 1984-10-25

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