JPS59189683A - 太陽電池の製造方法 - Google Patents

太陽電池の製造方法

Info

Publication number
JPS59189683A
JPS59189683A JP58065928A JP6592883A JPS59189683A JP S59189683 A JPS59189683 A JP S59189683A JP 58065928 A JP58065928 A JP 58065928A JP 6592883 A JP6592883 A JP 6592883A JP S59189683 A JPS59189683 A JP S59189683A
Authority
JP
Japan
Prior art keywords
substrate
amorphous silicon
thin film
film
silicon thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58065928A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0518269B2 (enrdf_load_stackoverflow
Inventor
Atsushi Kudo
淳 工藤
Masayoshi Koba
木場　正義
Hiroshi Imagawa
今川　容
Setsu Akiyama
秋山　節
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Toyobo Co Ltd
Original Assignee
Sharp Corp
Toyobo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp, Toyobo Co Ltd filed Critical Sharp Corp
Priority to JP58065928A priority Critical patent/JPS59189683A/ja
Publication of JPS59189683A publication Critical patent/JPS59189683A/ja
Publication of JPH0518269B2 publication Critical patent/JPH0518269B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
JP58065928A 1983-04-13 1983-04-13 太陽電池の製造方法 Granted JPS59189683A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58065928A JPS59189683A (ja) 1983-04-13 1983-04-13 太陽電池の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58065928A JPS59189683A (ja) 1983-04-13 1983-04-13 太陽電池の製造方法

Publications (2)

Publication Number Publication Date
JPS59189683A true JPS59189683A (ja) 1984-10-27
JPH0518269B2 JPH0518269B2 (enrdf_load_stackoverflow) 1993-03-11

Family

ID=13301110

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58065928A Granted JPS59189683A (ja) 1983-04-13 1983-04-13 太陽電池の製造方法

Country Status (1)

Country Link
JP (1) JPS59189683A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60194582A (ja) * 1984-03-16 1985-10-03 Matsushita Electric Ind Co Ltd 非晶質シリコン光起電力素子の製造法
JPS60195979A (ja) * 1984-03-17 1985-10-04 Semiconductor Energy Lab Co Ltd 薄膜太陽電池
JPS61168271A (ja) * 1985-01-21 1986-07-29 Sumitomo Bakelite Co Ltd 非晶質シリコン太陽電池

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60194582A (ja) * 1984-03-16 1985-10-03 Matsushita Electric Ind Co Ltd 非晶質シリコン光起電力素子の製造法
JPS60195979A (ja) * 1984-03-17 1985-10-04 Semiconductor Energy Lab Co Ltd 薄膜太陽電池
JPS61168271A (ja) * 1985-01-21 1986-07-29 Sumitomo Bakelite Co Ltd 非晶質シリコン太陽電池

Also Published As

Publication number Publication date
JPH0518269B2 (enrdf_load_stackoverflow) 1993-03-11

Similar Documents

Publication Publication Date Title
US4490229A (en) Deposition of diamondlike carbon films
EP0032788B1 (en) Method for depositing coatings in a glow discharge
US4120700A (en) Method of producing p-n junction type elements by ionized cluster beam deposition and ion-implantation
US4511756A (en) Amorphous silicon solar cells and a method of producing the same
TW201042065A (en) Methods for fabricating copper indium gallium diselenide (CIGS) compound thin films
JP3146112B2 (ja) プラズマｃｖｄ装置
US4581113A (en) Process for forming an amorphous silicon film
JPS6039106A (ja) 微粒子の製造方法
US4394210A (en) Process for forming a lead film
JPS59189683A (ja) 太陽電池の製造方法
CN115029669B (zh) 一种采用液态金属高功率脉冲磁控溅射提高沉积效率的方法
CN111235532A (zh) 一种离子镀膜与电子束蒸发镀膜结合的镀膜装置及其镀膜方法
JP2732352B2 (ja) カルコパイライト型化合物の薄膜の作製方法
JP3639453B2 (ja) 化合物半導体薄膜の製造装置およびこれを用いた化合物半導体薄膜の製造方法
JPS59189684A (ja) 非晶質シリコン太陽電池
CN119913470B (zh) 一种用于提高硅晶片性能的中熵合金薄膜及其制备方法
JPS59119877A (ja) 太陽電池
CN208430226U (zh) 一种连续镀膜工艺室
Kirkpatrick et al. Amorphous Silicon Films for Solar Cells by Ionized Cluster Beam Deposition
JPS6146046B2 (enrdf_load_stackoverflow)
JPH07263344A (ja) 半導体薄膜形成方法
JPS6017070A (ja) 薄膜形成方法及びその装置
JP3102540B2 (ja) 低水素量非晶質シリコン半導体薄膜の形成方法
JP2000196118A (ja) 太陽電池の製造方法
JPS58100672A (ja) 薄膜形成法及びその装置