JPS59184795A - ３−５族化合物半導体単結晶の製造方法 - Google Patents

３−５族化合物半導体単結晶の製造方法

Info

Publication number
JPS59184795A
JPS59184795A JP58057925A JP5792583A JPS59184795A JP S59184795 A JPS59184795 A JP S59184795A JP 58057925 A JP58057925 A JP 58057925A JP 5792583 A JP5792583 A JP 5792583A JP S59184795 A JPS59184795 A JP S59184795A
Authority
JP
Japan
Prior art keywords
crystal
melt
temperature
seed crystal
pulling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58057925A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6241200B2 (enExample
Inventor
Kazutaka Terajima
一高 寺嶋
Toru Katsumata
徹 勝亦
Hiroaki Nakajima
中島　宏明
Tsuguo Fukuda
承生 福田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP58057925A priority Critical patent/JPS59184795A/ja
Priority to GB08408563A priority patent/GB2140704B/en
Priority to US06/596,705 priority patent/US4586979A/en
Publication of JPS59184795A publication Critical patent/JPS59184795A/ja
Publication of JPS6241200B2 publication Critical patent/JPS6241200B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/28—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using weight changes of the crystal or the melt, e.g. flotation methods

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP58057925A 1983-04-04 1983-04-04 ３−５族化合物半導体単結晶の製造方法 Granted JPS59184795A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP58057925A JPS59184795A (ja) 1983-04-04 1983-04-04 ３−５族化合物半導体単結晶の製造方法
GB08408563A GB2140704B (en) 1983-04-04 1984-04-03 Control of crystal pulling
US06/596,705 US4586979A (en) 1983-04-04 1984-04-04 Method for manufacture of III-V group compound semiconductor single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58057925A JPS59184795A (ja) 1983-04-04 1983-04-04 ３−５族化合物半導体単結晶の製造方法

Publications (2)

Publication Number Publication Date
JPS59184795A true JPS59184795A (ja) 1984-10-20
JPS6241200B2 JPS6241200B2 (enExample) 1987-09-01

Family

ID=13069577

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58057925A Granted JPS59184795A (ja) 1983-04-04 1983-04-04 ３−５族化合物半導体単結晶の製造方法

Country Status (1)

Country Link
JP (1) JPS59184795A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61136989A (ja) * 1984-12-05 1986-06-24 Toshiba Ceramics Co Ltd 引上げ法における単結晶育成時の形状制御方法
JP2017007884A (ja) * 2015-06-18 2017-01-12 住友金属鉱山株式会社 単結晶の製造方法
DE112015003778B4 (de) 2014-09-29 2024-05-23 Shin-Etsu Handotai Co., Ltd. Verfahren zum Nachschmelzen des Halbleiter-Einkristalls mit einer Einkristall-Ziehvorrichtung

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5144475A (enExample) * 1974-10-14 1976-04-16 Hitachi Ltd
JPS5641896A (en) * 1979-09-14 1981-04-18 Toshiba Corp Manufacture of single crystal

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5144475A (enExample) * 1974-10-14 1976-04-16 Hitachi Ltd
JPS5641896A (en) * 1979-09-14 1981-04-18 Toshiba Corp Manufacture of single crystal

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61136989A (ja) * 1984-12-05 1986-06-24 Toshiba Ceramics Co Ltd 引上げ法における単結晶育成時の形状制御方法
DE112015003778B4 (de) 2014-09-29 2024-05-23 Shin-Etsu Handotai Co., Ltd. Verfahren zum Nachschmelzen des Halbleiter-Einkristalls mit einer Einkristall-Ziehvorrichtung
JP2017007884A (ja) * 2015-06-18 2017-01-12 住友金属鉱山株式会社 単結晶の製造方法

Also Published As

Publication number Publication date
JPS6241200B2 (enExample) 1987-09-01

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