JPS59181531A - 拡散領域の形成方法 - Google Patents

拡散領域の形成方法

Info

Publication number
JPS59181531A
JPS59181531A JP58053672A JP5367283A JPS59181531A JP S59181531 A JPS59181531 A JP S59181531A JP 58053672 A JP58053672 A JP 58053672A JP 5367283 A JP5367283 A JP 5367283A JP S59181531 A JPS59181531 A JP S59181531A
Authority
JP
Japan
Prior art keywords
silicon substrate
type silicon
diffusion region
treatment
oxidizing atmosphere
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58053672A
Other languages
English (en)
Japanese (ja)
Other versions
JPS641925B2 (en:Method
Inventor
Norio Hirashita
紀夫 平下
博 ▲おの▼田
Hiroshi Onoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP58053672A priority Critical patent/JPS59181531A/ja
Publication of JPS59181531A publication Critical patent/JPS59181531A/ja
Publication of JPS641925B2 publication Critical patent/JPS641925B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P30/20—

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Bipolar Transistors (AREA)
JP58053672A 1983-03-31 1983-03-31 拡散領域の形成方法 Granted JPS59181531A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58053672A JPS59181531A (ja) 1983-03-31 1983-03-31 拡散領域の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58053672A JPS59181531A (ja) 1983-03-31 1983-03-31 拡散領域の形成方法

Publications (2)

Publication Number Publication Date
JPS59181531A true JPS59181531A (ja) 1984-10-16
JPS641925B2 JPS641925B2 (en:Method) 1989-01-13

Family

ID=12949319

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58053672A Granted JPS59181531A (ja) 1983-03-31 1983-03-31 拡散領域の形成方法

Country Status (1)

Country Link
JP (1) JPS59181531A (en:Method)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61145818A (ja) * 1984-12-20 1986-07-03 Sony Corp 半導体薄膜の熱処理方法
JPS61283133A (ja) * 1985-06-10 1986-12-13 Hitachi Ltd 半導体素子の製造方法
JP2003059856A (ja) * 2001-08-09 2003-02-28 Fuji Electric Co Ltd 半導体装置の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61145818A (ja) * 1984-12-20 1986-07-03 Sony Corp 半導体薄膜の熱処理方法
JPS61283133A (ja) * 1985-06-10 1986-12-13 Hitachi Ltd 半導体素子の製造方法
JP2003059856A (ja) * 2001-08-09 2003-02-28 Fuji Electric Co Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS641925B2 (en:Method) 1989-01-13

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