JPS59181318A - Manufacture of optical waveguide - Google Patents
Manufacture of optical waveguideInfo
- Publication number
- JPS59181318A JPS59181318A JP58055857A JP5585783A JPS59181318A JP S59181318 A JPS59181318 A JP S59181318A JP 58055857 A JP58055857 A JP 58055857A JP 5585783 A JP5585783 A JP 5585783A JP S59181318 A JPS59181318 A JP S59181318A
- Authority
- JP
- Japan
- Prior art keywords
- waveguide
- buffer layer
- annealed
- layer
- alumina
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
（１）発明の技術分野
本発明は先導波路作製方法、詳しくは平面導波路と電極
との間に形成するバッファ一層を湿（ｗｅｔ ） Ｍ素
雰囲気でアニールするごとによりＤＣドリフトを防止す
る方法に関する。DETAILED DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to a method for producing a leading waveguide, specifically, by annealing a buffer layer formed between a planar waveguide and an electrode in a wet M atmosphere. The present invention relates to a method for preventing DC drift.
（２）技術の背景
リチウムナイオヘーｈ （ＬｉＮｂ０３） ＪＪｓ板に
平面導波路を形成する技術は公知である。第１図の肋■
η図を参照すると、リチウムナイオヘート基扱（以下に
は単に基板という）１上にチタン２を配置し、１ｏｏｏ
℃程度の温度でアニールするとチタンは基板中に拡散し
てチタン拡散領域が形成され、この領域は光の屈折率が
基板１の他の部分より大きくなるために光の導波路とな
る。この領域を以下には導波路３と呼称する。(2) Background of the technology The technology for forming a planar waveguide on a lithium nioheh (LiNb03) JJs board is well known. Ribs in Figure 1■
Referring to the
When annealing is carried out at a temperature of about .degree. C., titanium is diffused into the substrate to form a titanium diffusion region, which has a higher refractive index for light than other parts of the substrate 1, and thus becomes an optical waveguide. This region will be referred to as waveguide 3 below.
導波路３上に電極４を形成しく電極４の形成において拡
散後のチタン２の透明残留）模をそのまま残存せしめて
もなんら支障はない）、電極４に電流を通して電界をか
けると、スイッチング、変調などの操作を行うことが可
能になる。When an electrode 4 is formed on the waveguide 3, there is no problem even if the transparent residue of titanium 2 after diffusion is left as it is in the formation of the electrode 4. When an electric field is applied to the electrode 4 by passing a current through it, switching and modulation occur. It becomes possible to perform operations such as
（３）従来技術と問題点
第１図に示した例においては、光は電極４に吸収される
。光の伝播において、光の水平方向に偏波するＴＥモー
ドと垂直力向に偏波する１″Ｍモードとが存在するが、
図示例で１’Ｅモートは減衰することなく、ＴＭモート
が減衰し、前記した光の吸収現象が発生する。(3) Prior Art and Problems In the example shown in FIG. 1, light is absorbed by the electrode 4. In the propagation of light, there are TE mode, which polarizes the light in the horizontal direction, and 1″M mode, which polarizes the light in the vertical force direction.
In the illustrated example, the 1'E moat is not attenuated, but the TM moat is attenuated, and the above-described light absorption phenomenon occurs.
それを防止するため、基板１と電極４との間に透明な物
質でバッファ一層５を第２図に示す如く形成する。なお
第２図において、第１図に図示した部分と簡じ部分は同
一符号をイリシて表示する。In order to prevent this, a buffer layer 5 made of a transparent material is formed between the substrate 1 and the electrode 4 as shown in FIG. In FIG. 2, the same parts as those shown in FIG. 1 are indicated by the same reference numerals.
かかる透明な物質とじ一〇二酸化シリコン（Ｓｉ０２）
、アルミナ（ｉ２０３）が々ｆ適である。Such transparent material binds silicon dioxide (Si02).
, alumina (i203) is most suitable.
前記の如くにバッファ一層５を設けたところ、電界をか
け°ζスイッチングまたは変調を行う場合、時間が経過
するにつれて電界の効果が薄れること、すなわち、ある
時間が経過した後においては弱い電界がかけられたと同
様になり、経時的に実効電界が弱くなり、十分なスイッ
チングまたは変調を実現しえなくなる。かかる現象ば１
〕Ｃドリフトと呼称される。When the buffer layer 5 is provided as described above, when an electric field is applied to perform switching or modulation, the effect of the electric field weakens over time, that is, after a certain period of time, a weak electric field is applied. The effective electric field weakens over time, making it impossible to achieve sufficient switching or modulation. Such a phenomenon
] It is called C drift.
１］Ｃドリフトの原因についての理論的解明は未だ十分
になされていないが、バッファ一層に電流が洩れる（リ
ークする）か、または基板１とバッファ一層５との界面
に電流がリークするために前記したＤＣドリフＩ・が発
生ずるのでばないかと考えられている。1] Although the cause of C drift has not yet been fully theoretically elucidated, current leaks into the buffer layer or at the interface between the substrate 1 and the buffer layer 5. It is thought that this may be due to the occurrence of DC drift I.
かかるＤＣドリフトを防止するため、５ｉ０２で形成さ
れたバッファ一層をアニールすることが提案された（Ｅ
ｌｅｃｔｒｏｏｐｔｉｃ ｄｉｆｆｒａｃｔｉｏｎ ｍ
ｏｄｕｌａｔｉｏｎｉｎ ｉ’１−ｄｉｆｆｕｓｅｄ
ＬｉＴａ０：＋ ＋ Ｇ、Ｌ、 １’ａｎｇｏｎａｎ
ｅｔ ａｌ、。In order to prevent such DC drift, it has been proposed to anneal the buffer layer formed with 5i02 (E
electrooptic diffraction m
oduration in i'1-diffused
LiTa0: + + G, L, 1'angonan
et al.
Ａｐｐｌ、 Ｏｐｔ、、 １７．３２５９ （１９７８
） ）。しかし、このアニール条件例えば詳細なアニー
ル時間等についてのデータは公にされていない。Appl, Opt., 17.3259 (1978
) ). However, data regarding the annealing conditions, such as detailed annealing time, etc., have not been made public.
（４）発明の目的
本発明は上記従来の問題点に鑑め、導波路が形成された
基板上にバッファ一層を設け、このノ＼ソファ一層上に
電極を形成した光導波路において、バッファ一層に起因
するドリフト現象が防止された先導波路の作製方法を提
供することを目的とする。(4) Purpose of the Invention In view of the above conventional problems, the present invention provides an optical waveguide in which a buffer layer is provided on a substrate on which a waveguide is formed, and an electrode is formed on this layer. It is an object of the present invention to provide a method for manufacturing a leading waveguide in which the drift phenomenon caused by the present invention is prevented.
（５）発明の構成
そしてこの目的は本発明によれば、平面導波路と電極と
の間にアルミナによりバッファーＪｆ？を形成し、該バ
ッファ一層を湿酸素雰囲気中でアニールすることを特徴
とする光導波路の作製方法を提供することによって達成
される。(5) Structure of the Invention According to the present invention, a buffer Jf? is provided between the planar waveguide and the electrode by alumina. This is achieved by providing a method for fabricating an optical waveguide, characterized in that the buffer layer is formed and the buffer layer is annealed in a humid oxygen atmosphere.
（６）発明の実施例 以下本発明実施例を図面によって詳述する。(6) Examples of the invention Embodiments of the present invention will be described in detail below with reference to the drawings.
本願発明者は上記ＤＣドリフトの防［に方法を探求する
ための実験において、バッファ一層をアルミナで形成し
、それを異なった条件の下において“アニールした。In an experiment to find a method for preventing the DC drift, the inventor formed a buffer layer of alumina and "annealed it under different conditions."
先ず、バッファ一層を、アルミナを約２０００人の膜厚
に蒸着することによって形成し、これを、／！Ｉｉ！酸
幸雰囲酸中雰囲気中℃、・１０時間アニールした。First, a buffer layer is formed by depositing alumina to a thickness of about 2000 nm, and this is /! Ii! Annealing was performed for 10 hours at °C in an acidic atmosphere.
かかるアニールは通當の技術でなされた。しかる後に電
極４を第２図に示される如くに形成した。Such annealing was performed using conventional techniques. Thereafter, the electrode 4 was formed as shown in FIG.
上記の如くにして形成された光導波路はＤＣドリフトが
全く観測されなかった。しかし、アニール時間が５時間
のものでは直流電圧を５分印加すると実効的な電界が９
０％になっ”ζしまった。No DC drift was observed in the optical waveguide formed as described above. However, when the annealing time is 5 hours, applying a DC voltage for 5 minutes reduces the effective electric field to 9
It became 0%.
また、本願発明者は乾＜ｄｒｙ ）酸素雰囲気中でバッ
ファ一層のアニールを行ったが、その結果はＤＣドリフ
トの防止については効果が不十分であることを確認した
。Further, the inventor of the present application annealed one layer of the buffer in a dry oxygen atmosphere, but the results confirmed that the effect of preventing DC drift was insufficient.
（７）発明の効果
以上詳細に説明した如く、本発明によれば、リチウムナ
イオベート基板にチタンの熱拡散によって導波路を形成
し、基板上に２０００Ａの厚さのアルミナのバッファ一
層を設け、それを湿酸素雰囲気中で５６０°Ｃ１１０時
間アニールｊ−ることにより、ドリフト防止についζき
わめて顕著な効果を得ることが可能となり、光柴積回路
の信頼性向上に効果大であることが判明した。(7) Effects of the Invention As explained in detail above, according to the present invention, a waveguide is formed on a lithium niobate substrate by thermal diffusion of titanium, and a single layer of alumina buffer with a thickness of 2000 A is provided on the substrate. By annealing it at 560°C for 110 hours in a humid oxygen atmosphere, it was possible to obtain a very significant effect in preventing drift, which was found to be highly effective in improving the reliability of Hikari product circuits. .
第１図はリチウム・す・フイオヘート７板に形成された
導波路と電極を示す断面図、第２図は本発明の方法によ
る先導波路の断面図である。
１−・−リチウムナイトベート基板、
２−チタン、３−導波路、４−電極
性 許 出願人 富士通株式会社
代理人 弁理士 松 岡 宏四部
第１図
３
第２図FIG. 1 is a cross-sectional view showing a waveguide and electrodes formed on a lithium-sulphiohate 7 plate, and FIG. 2 is a cross-sectional view of a leading waveguide formed by the method of the present invention. 1-.-Lithium nightbate substrate, 2-Titanium, 3-Waveguide, 4-Polarity Applicant Fujitsu Limited Representative Patent Attorney Hiroshi Matsuoka Department Figure 1 3 Figure 2
Claims (1)
を形成し、該バッファ一層を／！Ｉｉ！酸素雰囲気中で
アニールすることを特徴とする先導波路の作製方法。A buffer layer of alumina is formed between the planar waveguide and the electrode, and the buffer layer is /! Ii! A method for producing a leading waveguide, the method comprising annealing in an oxygen atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58055857A JPS59181318A (en) | 1983-03-31 | 1983-03-31 | Manufacture of optical waveguide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58055857A JPS59181318A (en) | 1983-03-31 | 1983-03-31 | Manufacture of optical waveguide |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59181318A true JPS59181318A (en) | 1984-10-15 |
Family
ID=13010722
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58055857A Pending JPS59181318A (en) | 1983-03-31 | 1983-03-31 | Manufacture of optical waveguide |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59181318A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0247607A (en) * | 1988-08-09 | 1990-02-16 | Fujitsu Ltd | Semiconductor device and its production |
| JPH03170909A (en) * | 1989-11-29 | 1991-07-24 | Hikari Keisoku Gijutsu Kaihatsu Kk | Optical modulating element |
-
1983
- 1983-03-31 JP JP58055857A patent/JPS59181318A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0247607A (en) * | 1988-08-09 | 1990-02-16 | Fujitsu Ltd | Semiconductor device and its production |
| JPH03170909A (en) * | 1989-11-29 | 1991-07-24 | Hikari Keisoku Gijutsu Kaihatsu Kk | Optical modulating element |
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