JPS59181036A - Semiconductor device - Google Patents

Abstract

PURPOSE:To enhance the moisture resistance of a semiconductor device by molding a semiconductor element with epoxy resin composition which contains epoxy resin, phenol resin, mercaptosilane, product reacted with amine catalyst and hardening accelerator. CONSTITUTION:A semiconductor element is covered and molded with epoxy resin composition which contains 100wt.parts of epoxy resin or novolac epoxy resin, 50-70wt.parts of reactive product obtained by reacting phenol resin having at least two phenol having hydroxide group, preferably novolac phenol resin, mercaptosilane having at least one alkoxy group and/or hydroxide group in a molecule, and amine catalyst at 100:0.1-5:0.1-1, and suitable amount of hardening accelerator (third amine, third class amine group, imidazole compound).

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor device with good moisture resistance.

It is well known that epoxy resin molding materials for low-pressure molding are used to make semiconductor devices such as IO, LSI, and transistors resistant to resin weight. However, it is not possible to mold semiconductor devices using conventional molding materials. In conventional semiconductor devices, when used in a high-temperature, high-humidity atmosphere, the metal vapor deposited film such as aluminum formed on the device corrodes and deteriorates, resulting in poor moisture resistance as a device. .

The present invention improves these drawbacks. (Al
100 parts by weight of epoxy resin tBI phenolic aqueous base A phenol resin having at least two acid groups, a mercaptosilane having at least one alkoxy group and/or hydroxyl group per molecule, and an amine catalyst in a weight ratio of 100:061 to 50. The present invention relates to a semiconductor device in which a semiconductor element is coated and molded using an epoxy resin composition containing 50 to 70 parts by weight tc of the reaction product obtained by the reaction in 1 to 1 and an appropriate amount of a curing accelerator.

Preferred epoxy resins for use in the present invention are novolac-type epoxy resins.

Examples of novolac type epoxy resins include cresol novolak type epoxy resins and phenol novolac type epoxy resins.OAs the novolac type epoxy resins, those having an epoxy equivalent of 160 to 250 and a softening point of 50 to 130°C are usually used.

Furthermore, the cresol novolac type epoxy resin preferably has an epoxy equivalent of 180 to 210 and a softening point of 6 (lV11
A temperature of 0°C is used.

In the phenol novolac type epoxy resin, preferably,
An epoxy equivalent having an epoxy equivalent of 160 to 200 and a softening point of 60 to 110°C is used.

In the present invention, the phenolic resin having at least two phenolic hydroxyl groups has a hydroxyl equivalent of 90 to 120,
Those having a softening point of 60 to 100 are generally used, and novolac type phenolic resins are preferably used.

Examples of the novolak type phenolic resin include phenol novolak resin, cresol novolak resin, and bisphenol A novolak resin, and those having a softening point of 50 to 130°C are usually used.

This type of novolak resin can be obtained by condensing phenols such as phenol, cresol, and bisphenol A with aldehydes such as formaldehyde under an acidic catalyst.

The mercaptosilane having at least one alkoxy group (typically methoxy group and ethoxy group) and/or hydroxyl group in the molecule (up to 3 in the molecule) preferably has a molecular weight of 150 to About 500 can be used, for example, gamma
Examples include mercaptopropyltrimethoxysilane and gammamercabutoglobyltriethoxysilane.

Preferred as the mercaptosilane are compounds having 2 to 3 alkoxy groups and/or hydroxyl groups in the molecule.

As the amine catalyst used in the present invention, the molecule Jl
Tertiary amine with i80 to 800, tertiary amine salt,
Examples include imidazoles.

Specific examples thereof include benzyldimethylamine, α-methylbenzyldimethylamine, 2.4.6
- tris(dimethylaminomethyl)phenol (or its tri-2-ethylhexylate), 1,8-diaza-bicyclo(5.4.0)-undecene-7 (or its phenol salt, 2-ethylhexane salt), 2-methylimidazole and 2-ethyl-4-methylimidazole can be mentioned.

In the present invention, the phenol resin, mercaptosilane, and amine catalyst are reacted to obtain a reaction product used as a curing agent, and the weight ratio of the phenol resin is 100. Mercaptosilane 0.1-5, preferably 1-5, amine catalyst 0.1-1 preferably 0.2-0
．． The reason why it is set as 5 is that outside this numerical range, the reliability of the obtained semiconductor device under high temperature and high humidity becomes poor.

The reaction of the above three components can be carried out, for example, as follows. 100 parts by weight of the phenolic resin and 0.1 to 5 parts by weight of the mercaptosilane are thoroughly stirred at a temperature of 130 to 150°C, and then 0.1 to 1 part of the amine catalyst
Parts by weight are gradually added dropwise over a period of about 0.5 to 1 hour while maintaining the reaction system at the above temperature to carry out the reaction.

Foaming due to the generation of alcohol as the reaction progresses is completed in about 1 hour, but the temperature is then gradually raised to 150°C to 160°C to complete the reaction in about 2 hours. By doing so, a reaction product mainly composed of mercapto-modified phenol resin can be obtained.

Since the reaction product is generally solid at room temperature, the reaction product is usually cooled to room temperature and then pulverized for use.

In the present invention, preferred examples of the curing accelerator include tertiary amines, tertiary amine salts, and imidazole compounds. The curing accelerator usually has a molecular weight of 8
0 to 800, and specific examples of these include benzyldimethylamine, α-methylbenzyldimethylamine, 2,4,6-tris(dimethylaminomethyl)phenol (or its tri-2 −
ethylhexylate), 1,8-diaza-bicyclo(5
-4.0) Undecene-7 (Rurui's phenol salt, 2-ethyl-hexanoate), 2-methylimidazole, and 2-ethyl-4-methylimidazole can be mentioned.

The curing accelerator is preferably used in an amount of 0.1 to 3 by weight of the epoxy resin used.

In the present invention, 100 parts by weight of EBOKI 7 resin itself and 50 to 50 parts by weight of a reaction product mainly composed of mercapto-modified phenolic resin.
The reason for using 70 parts by weight is that outside this numerical range, the resulting semiconductor device will have poor moisture resistance.

In the present invention, to produce the epoxy resin composition,
For example, it can be obtained by uniformly mixing and kneading the above-mentioned components, preferably by heat kneading.

Furthermore, in the present invention, the epoxy resin composition can be prepared by adding 79 powder, an inorganic filler such as clay or talc, a flame retardant such as antimony oxide or a halide, or silica to each of the above components. 60
When an inorganic filler is used, the amount of the inorganic filler added is 50-80% in the epoxy resin composition.

According to the present invention, it is possible to obtain a semiconductor device having excellent moisture resistance by covering and molding a semiconductor element with such an epoxy resin composition. It is thought that this was due to an accident. In the second aspect of the present invention, the reedle is particularly plated with silver.
It was found that the effect was great when using the system.

The present invention will be explained below using Examples. Parts in Examples are parts by weight.

Example A (Production of mercapto-modified phenolic resin) Phenol novolak (hydroxyl group -1dllO1 softening point 83°C)
100fil+ and 0.5 part of gamma-mercaptotriethoxysilane were heated to 130°C in a flask equipped with a stirrer to form a homogeneous system. Next, while maintaining the same temperature, 0.3 part of 2,4,6-tris(dimethylaminomethyl)phenol was gradually added dropwise over 40 minutes. After the dropwise addition, the reaction system was heated to 155°C for 1 hour. The reaction produced a mercapto-modified phenolic resin.

Example B (Production of mercapto-modified phenolic resin) Cresol novola resin (hydroxyl equivalent: 110, softening point: 83°C) 1
00 parts and 2 parts of gamma-mercaptotriethoxysilane were heated to 145°C in a flask equipped with a stirrer to form a homogeneous system. After completing the dropwise addition of benzyldimethylamine while maintaining the same temperature, the reaction system was raised to 150°C. Example 1 ~ Mercapto-modified phenol resin was obtained by reacting for 1 hour by heating.
3 and Comparative Example The ingredients shown in Table 1 below were heated with a hot roll at 80°C.
The mixture was kneaded for a minute, cooled, and then finely ground to obtain an epoxy resin composition powder.

Using the powders obtained in Examples 1 to 3 and Comparative Examples,
A semiconductor device was obtained by transfer molding Bower E C under the conditions of a pressure cuff of 0° C. for 2 minutes.

Pressure cook using the obtained semiconductor device.

I did a car test.

The results are listed in Table 2 below.

Table 2 In the pressure test, 30 semiconductor devices were left at 121°C and under a water vapor pressure of 2 atmospheres for the time shown in Table 2, and the resistance value of the aluminum wiring on the PowerE-C was 4.
If the number exceeds 30, it is considered defective, and the number is listed in Table 2 as 0.As is clear from the above examples, the semiconductor device of the present invention has excellent moisture resistance.

patent applicant Nitto Electric Industry Co., Ltd. Representative Sanbe Hijikata

Claims (1)

Scope of Claims: (100 parts by weight of Al epoxy resin [Bl phenolic resin having at least two phenolic hydroxyl groups, mercaptosilane having at least one alkoxy group and/or hydroxyl group in one molecule, and amine catalyst)] Ratio 100:0.1~5:0.1
A semiconductor device formed by covering and molding a semiconductor element with an epoxy resin composition containing an appropriate amount of a curing accelerator, 50 to 70 parts by weight of a reaction product obtained by reacting with ~l.