JPS59181038A - Semiconductor device - Google Patents

Abstract

PURPOSE:To improve the moisture resistance of a semiconductor device by molding a semiconductor element with epoxy resin composition which contains novolac epoxy resin, phenol resin, hardener and phosphorus compound. CONSTITUTION:A semiconductor element is molded with epoxy resin composition which contains novolac epoxy resin, phenol resin having at least two phenol hydroxide groups, a hardener accelerator of one type selected from third amine, third class amine group, imidazole compound, at least one phosphorus compound selected from phosphoric acid ester, phosphoric acid ester metal salt, third amine phosphite, red phosphorus of 0.001-1.00wt% of total amount of the above first three.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor device with good moisture resistance.

Engineering 0. It is well known that an epoxy resin molding material for low pressure molding is used to resin-seal semiconductor elements such as LSIs and transistors.

However, when a semiconductor device obtained by molding a semiconductor element with a conventional molding material is used particularly in a high humidity atmosphere, the metal vapor deposited film such as aluminum formed on the element corrodes and deteriorates. The present invention improves these drawbacks (Al novolak type epoxy resin, fBl phenolic resin having at least two phenolic aqueous acid groups, an appropriate amount of at least one curing accelerator selected from tertiary amines, tertiary amine salts, and imidazole compounds;
001 to 1.00% by weight of at least one phosphorus compound selected from phosphoric acid ester, phosphoric ester metal salt, tertiary phosphite, and red phosphorus. As the novolac type epoxy resin in the present invention, there can be mentioned a cresol novolac type epoxy resin and a phenol novolak type epoxy resin.

As the novolak type epoxy resin, one having an epoxy equivalent of 160 to 250 and a softening point of 50 to 130°C is usually used.

Furthermore, in the case of a cresol novolac type epoxy resin, the epoxy equivalent is preferably 180 to 230 and the softening point is 60 to 110.
℃ is used.

In the phenol novolac type epoxy resin, preferably,
An epoxy equivalent having an epoxy equivalent of 160 to 200 and a softening point of 60 to 110°C is used.

The phenolic resin having at least two phenolic hydroxyl groups has a hydroxyl equivalent of 90 to 120 and a softening point of 60 to 1.
00 is generally used, but preferably a nopolar type phenolic resin is used.

Examples of the novolak type phenolic resin include phenol novolak resin, cresol novolak resin, and bisphenol A novolak resin, and those having a softening point of 50 to 130°C are usually used.

The novolak resin can be obtained by condensing phenols such as phenol, cresol, and bisphenol A with aldehydes such as formaldehyde under an acidic catalyst.

In the present invention, the phenol resin is preferably used in an amount of 0.8 to 12 hydroxyl equivalents per 1 epoxy equivalent of the epoxy resin.

Tertiary amines, tertiary amine salts, and imidazole compounds used as curing accelerators usually have a molecular weight of 80 to
About 800 are used, and specific examples of these include benzyldimethylamine, 2,4,6-tris(dimethylaminemethyl)phenol (or its tri-2-ethylhexylate), 1,8 -Diaza-
Bicyclo(5.4.0)undecene-7,2-methylimidazole, 2-ethylimidazole, 2-ethyl-4
-methylimidazole and 2-ethyl-4-methylimidazole.

The curing accelerator is 0.2 to 3% by weight of the epoxy resin used.
It is preferable to use

Examples of the phosphorus compounds used in the present invention include 2-ethylhexyl acid phosphate, indecyl acid phosphate, tridecyl acid phosphate, stearyl acid phosphate, oleyl acid phosphate, and di-2-ethylhexyl phosphate. metal salts of phosphate esters such as magnesium stearyl phosphate, aluminum stearyl phosphate, calcium stearyl phosphate, zinc stearyl phosphate, barium stearyl phosphate, triphenyl phosphite, tris(nonylphenyl ) phosphite, triinooctyl phosphite,
diphenylisodecyl phosphite, phenyl diisodecyl phosphite, triisodecyl phosphite, tristearyl phosphite, trioleyl phosphite,
Mention may be made of tertiary phosphates such as trilauryl trithiophosphate, and red phosphorus. In the present invention, the phosphorus compounds include the +A1% CB+ and (
It is preferable to use C), that is, 0.001 to 1.00 weight percent of the total amount of novola, resin-type epoxy resin, phenol resin, and curing accelerator.

The reason is that if the moisture content is less than 0.001% by weight, the moisture resistance of the resulting semiconductor device will not be improved;
This is because, if the temperature is higher than that, the moisture resistance will be lowered.

In the present invention, to produce the epoxy resin composition,
For example, it can be obtained by uniformly blending and kneading each of the above components, preferably by hot kneading.Furthermore, in the present invention, inorganic fillers such as silica powder, clay, and talc, antimony oxide, and halides are added to each of the above components. The epoxy resin composition can also be prepared by adding various additives such as flame retardants, silane coupling agents, mold release agents, and pigments.

The content is 50 to 80% by weight of the total epoxy resin composition.

The present invention will be specifically explained below using examples.

Parts in the examples are parts by weight.

Example 1 Cresol novolak epoxy resin, 100 parts (epoxy equivalent: 220) Phenol novolak...
50 parts (hydroxyl equivalent: 105, softening point: 70°C) 2-methylimidazole 0
．． 8 parts indecyl acid phos 7 eight...0.
Part 5 Carnauba wax・・・・・・・・・・・・・・・
... 2.5 parts fused silica powder...
35050 parts Silane cuff ring 1.8 parts 8 parts of the above ingredients
The mixture was kneaded for 2 minutes using heated rolls at 0°C, cooled, and then finely pulverized to obtain a resin powder.

Using the obtained resin powder, a semiconductor element (silicon chip with aluminum vapor-deposited wiring on the surface) was manufactured at a weight of 70 kg/m 180
A semiconductor device was prepared in the same manner as in Example 1, except that 0.1 part of zinc stearyl phosphate was used in place of isodecyl acid phosphate, Obtained.

Example 3 Example 1 except that 0.1 part by weight of triphenyl phosphite was used in place of isodecyl acid phosphate.
A semiconductor device was obtained in the same manner as in Example 4. Red phosphorus was used in place of isodecyl acid phosphate.
A semiconductor device was obtained in the same manner as in Example 1 except that one part was used.

Comparative Example A semiconductor device was obtained in the same manner as in Example 1 except that indecyl acid phosphate was not used.

A pressure drop test was conducted using the semiconductor devices obtained in Examples 1 to 4 and Comparative Example. The zero pressure vacuum test, whose results are listed in Table 1 below, involves leaving 100 grams of each semiconductor device at 121°C and 2 atmospheres of water vapor pressure for the time shown in Table 1. If the resistance value exceeds 100Ω, it is considered defective.
The numbers are listed in Table 1.0 As is clear from the above examples, it can be seen that the semiconductor device of the present invention has excellent moisture resistance.0 Patent applicant: Nitto Electric Industry Co., Ltd. Representative Sanbe Hijikata

Claims (1)

[Scope of Claims] (Al novolak type epoxy resin, (B) phenolic resin having at least two phenolic hydroxyl groups, (C1 tertiary amine, tertiary amine salt, imidazole compound) in an appropriate amount curing accelerator, fDl (0.0% of the total amount of At, FB+ and tar).
001 to 1.00% by weight of at least one phosphorus compound selected from phosphoric acid ester, phosphoric acid ester metal salt, tertiary phosphite, and red phosphorus. semiconductor devices.