JPS59180892A - 半導体メモリ - Google Patents

半導体メモリ

Info

Publication number
JPS59180892A
JPS59180892A JP58056077A JP5607783A JPS59180892A JP S59180892 A JPS59180892 A JP S59180892A JP 58056077 A JP58056077 A JP 58056077A JP 5607783 A JP5607783 A JP 5607783A JP S59180892 A JPS59180892 A JP S59180892A
Authority
JP
Japan
Prior art keywords
data
potential
column line
comparison
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58056077A
Other languages
English (en)
Japanese (ja)
Other versions
JPS623518B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Iwahashi
岩橋 弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58056077A priority Critical patent/JPS59180892A/ja
Priority to DE8383106729T priority patent/DE3381955D1/de
Priority to EP83106729A priority patent/EP0100011B1/en
Priority to US06/514,350 priority patent/US4613957A/en
Publication of JPS59180892A publication Critical patent/JPS59180892A/ja
Publication of JPS623518B2 publication Critical patent/JPS623518B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065Differential amplifiers of latching type

Landscapes

  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
JP58056077A 1982-07-26 1983-03-31 半導体メモリ Granted JPS59180892A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP58056077A JPS59180892A (ja) 1983-03-31 1983-03-31 半導体メモリ
DE8383106729T DE3381955D1 (de) 1982-07-26 1983-07-08 Halbleiterspeicheranlage mit datenuebertragungs- und erkennungsmitteln.
EP83106729A EP0100011B1 (en) 1982-07-26 1983-07-08 Semiconductor memory device having data transmission and detection means
US06/514,350 US4613957A (en) 1982-07-26 1983-07-15 Semiconductor memory device having a sense amplifier circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58056077A JPS59180892A (ja) 1983-03-31 1983-03-31 半導体メモリ

Publications (2)

Publication Number Publication Date
JPS59180892A true JPS59180892A (ja) 1984-10-15
JPS623518B2 JPS623518B2 (enrdf_load_stackoverflow) 1987-01-26

Family

ID=13017017

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58056077A Granted JPS59180892A (ja) 1982-07-26 1983-03-31 半導体メモリ

Country Status (1)

Country Link
JP (1) JPS59180892A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS648592A (en) * 1987-06-30 1989-01-12 Mitsubishi Electric Corp Semiconductor integrated circuit device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS575829A (en) * 1980-06-14 1982-01-12 Dowa Mining Co Ltd Separating and recovering method for tin in lead refining process

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS575829A (en) * 1980-06-14 1982-01-12 Dowa Mining Co Ltd Separating and recovering method for tin in lead refining process

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS648592A (en) * 1987-06-30 1989-01-12 Mitsubishi Electric Corp Semiconductor integrated circuit device

Also Published As

Publication number Publication date
JPS623518B2 (enrdf_load_stackoverflow) 1987-01-26

Similar Documents

Publication Publication Date Title
US5243573A (en) Sense amplifier for nonvolatile semiconductor storage devices
US4301518A (en) Differential sensing of single ended memory array
US5487043A (en) Semiconductor memory device having equalization signal generating circuit
US5349302A (en) Sense amplifier input stage for single array memory
US3953839A (en) Bit circuitry for enhance-deplete ram
US3967252A (en) Sense AMP for random access memory
US20140298146A1 (en) Apparatus and methods having majority bit detection
US4894803A (en) Memory circuit with improved data output control
JP2644261B2 (ja) ダイナミック型半導体記憶装置
US4379344A (en) Precharge circuit
JPH0640439B2 (ja) 半導体記憶装置
US5436865A (en) Output circuit for semiconductor memory device realizing extended data output upon inactivation of CAS signal
EP0096421A2 (en) Static memory device with signal transition detector
US5554942A (en) Integrated circuit memory having a power supply independent input buffer
EP0833340A1 (en) Reading circuit for semiconductor memory cells
US4042915A (en) MOS dynamic random access memory having an improved address decoder circuit
US5198709A (en) Address transition detector circuit
JPS6035755B2 (ja) センス増幅器
EP0100011B1 (en) Semiconductor memory device having data transmission and detection means
JPS59180892A (ja) 半導体メモリ
US4823322A (en) Dynamic random access memory device having an improved timing arrangement
US6100739A (en) Self-timed synchronous pulse generator with test mode
JPH08221990A (ja) 半導体記憶装置
JPS59180891A (ja) 半導体メモリ
US5687127A (en) Sense amplifier of semiconductor memory having an increased reading speed