JPS59178769A - Solid-state image pickup device - Google Patents
Solid-state image pickup deviceInfo
- Publication number
- JPS59178769A JPS59178769A JP58052730A JP5273083A JPS59178769A JP S59178769 A JPS59178769 A JP S59178769A JP 58052730 A JP58052730 A JP 58052730A JP 5273083 A JP5273083 A JP 5273083A JP S59178769 A JPS59178769 A JP S59178769A
- Authority
- JP
- Japan
- Prior art keywords
- solid
- electrode
- diode
- region
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000006243 chemical reaction Methods 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 5
- 206010047571 Visual impairment Diseases 0.000 abstract description 12
- 239000000969 carrier Substances 0.000 abstract description 5
- 238000009825 accumulation Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 2
- 239000002344 surface layer Substances 0.000 abstract 2
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 abstract 1
- 238000003384 imaging method Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 235000009508 confectionery Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
Abstract
Description
【発明の詳細な説明】
〔発明の１１Ａする技術分野〕
せた固体撮像素子に係ジ、特に残像特性全改善した固体
撮像素子に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention 11A] The present invention relates to a solid-state image sensor, and particularly to a solid-state image sensor with completely improved afterimage characteristics.
固体撮像素子の進展は目覚ましくＳｔ基板に光電変換部
と走互部を形成するモノリシック型固体撮像素子の他に
、前記両部の機能を分けてｓｉ基板にＣＣＤやＭＯＳな
どの走査部を形成し、その上部に光導電層などの光電変
換部を重畳するいわゆる′２階建て固体撮像素子“が出
現するようになった。The progress of solid-state imaging devices has been remarkable, and in addition to monolithic solid-state imaging devices in which a photoelectric conversion section and a scanning section are formed on an ST substrate, there are also monolithic solid-state imaging devices that form a scanning section such as a CCD or MOS on an Si substrate by separating the functions of the two sections. , so-called ``two-story solid-state image sensors'' have appeared on which a photoelectric conversion section such as a photoconductive layer is superimposed.
第１図は光導電体と電荷転送菓子を組み合わせた固体撮
像素子の一画素の断面図である。Ｐ形ｓ１基板（１）に
ｎ部の埋め込みチャネルＣＣＤからなる垂直ＣＯＤ （
２１と、同じくｎ部の蓄積ダイオード（３）が形成され
る。垂直ＣＣＤ （２１の上には転送用ゲート成極とな
るポリ３ｉ電極（４）がある。蓄積ダイオード（３）の
部分では熱酸化膜を含む第一酸化膜（５）にエツチング
を行ない、蓄積ダイオードのｎ部が露出するように形成
した後、例えばＡノなどの第−電へ（６）を所定の形状
に形成する。この後に第二酸化力莫（７）全形成し、さ
らにこの膜にエツチングを行ない。FIG. 1 is a cross-sectional view of one pixel of a solid-state image sensor that combines a photoconductor and a charge transfer confectionery. Vertical COD (
21, and a storage diode (3) of the n section is also formed. Above the vertical CCD (21) there is a poly 3i electrode (4) which serves as the gate polarization for transfer. In the storage diode (3) part, the first oxide film (5) including the thermal oxide film is etched and the storage After forming the diode so that the n part is exposed, a third electrode (6), such as A, is formed in a predetermined shape.After this, a second oxidizing force (7) is completely formed, and further this film is coated. Perform etching.
第一電極は一部全露出させ、これにＡｌなどの第二電％
（８１ｋ所定の形状に形成する。この上部にａ−８１
などの光導電体層（９）全スパッタリングやグロー放電
で形成し、さらに透明導電膜（１０） ｋ形成して、走
査部と光電交換部を有する固体撮像素子全得る。A part of the first electrode is completely exposed, and a second electrode such as Al is added to this.
(81k is formed into a predetermined shape.A-81
A photoconductor layer (9) is entirely formed by sputtering or glow discharge, and a transparent conductive film (10) is further formed to obtain a solid-state imaging device having a scanning section and a photoelectric exchange section.
なお、電極の材料が第一層はボＩＪ Ｓ ｒ 、第二層
はモリブデンの例でほぼ同様の構成が特開昭５７−３２
１８３号公報に記載されている。In addition, an almost similar structure is disclosed in Japanese Patent Laid-Open No. 57-32, in which the electrode material is made of boron IJ Sr for the first layer and molybdenum for the second layer.
It is described in Publication No. 183.
このような固体撮像素子において、ａ−８ｉなどの光導
電体１層（９）にて光生成されたギヤリヤのうち、止孔
は透明導電ｊ摸（１０）側へＷ電子は蓄積ダイオード（
３）に信号電荷として蓄積される。これらの蓄積された
信号′ｉシ荷は１／６０秒又は１／３０秒後にポリＳ
Ｉ 電極（４）の一部に印加されたパルスによ−ク蓄積
ダイオード（３）から垂直ＣＯＤ （２１に転送される
。この後手ｒａ、 ｃ ＣＤを転送された信号電荷は水
平ＣＯＤレジスタ（図示せず）に入浸水平転送後、信号
出力として読み出される。In such a solid-state image sensing device, in a gear gear in which light is generated in one layer of photoconductor (9) such as a-8i, the stop hole is transferred to the transparent conductive layer (10), and the W electrons are transferred to the storage diode (10).
3) is accumulated as a signal charge. These accumulated signals 'i' load will be released after 1/60 seconds or 1/30 seconds.
A pulse applied to a part of the I electrode (4) causes the signal charge to be transferred from the storage diode (3) to the vertical COD (21).The signal charge transferred to the horizontal COD register (Fig. After horizontal transfer (not shown), it is read out as a signal output.
このような固体撮像素子は従来のｓｉモノリシックの素
子に比べて、感光面積が大きくなる利点やスミアやブル
ーミング特性が良好という利点がある反面、残像特性が
問題となる場合がある。残像の原因はａ−８ｉなどの光
電変換膜の元応答遅れに起因するものもあるが、蓄積ダ
イオードから垂直ＣＯＤへの信号電荷の転送の際に全部
の電荷が転送されずに残るためである。転送が不完全な
ために起こる残像は第１図の固体撮像素子のみならず。Although such a solid-state image sensor has the advantage of having a larger photosensitive area and better smear and blooming characteristics than conventional Si monolithic devices, it may have problems with image retention characteristics. The cause of the afterimage is partly due to the original response delay of the photoelectric conversion film such as A-8I, but it is also because when the signal charge is transferred from the storage diode to the vertical COD, not all the charge is transferred and remains. . Afterimages caused by incomplete transfer occur not only in the solid-state image sensor shown in FIG.
走査部に相当する従来のインターライン転送形固体撮像
素子でも問題とな不事が知られており、ゝイアターライ
ン転送方弐Ｃ”ＣＤイメージセンサ−の残像現象“（寺
西信−ほか、・テレビジョン学会技術報告Ｖｏ１．４．
Ｎｏ４１ｐｐ２５〜３０）や’Ｎｏ ＩｍａｇｅＬａｇ
Ｐｈｏｔｏｄｉｏｄｅｓ ５ｔｒｖｅｔｕｒｅ ｉｎ
ｔｈｅ ＩｎｔｅｒｌｒｎｅＣＣＤ Ｉｍａｇｅ ５
ｅｎｓｏｒ“（Ｎｏｂｕｋａ７ｕ Ｔｅｒａｎｉｓｈｉ
ｅｔａｌ ＩＥＤＭ８２ １２．６）に示されている
。Problems are known to occur even with the conventional interline transfer type solid-state image sensor, which corresponds to the scanning section. Academic conference technical report Vol. 1.4.
No41pp25-30) and 'No ImageLag
Photodiodes 5trveture in
the InterlrneCCD Image 5
sensor “(Nobuka7u Teranishi
etal IEDM82 12.6).
すなわち第２図に示すような第１図の蓄積ダイオードの
構成と同様のＮＰ接合のホト、タイオード（ｉｉ）を持
つインターライン転送形ＣＯＤでは不完全転送モードと
なり残像が出やすいのに対して。In other words, an interline transfer type COD having an NP junction photo diode (ii) similar to the storage diode configuration of FIG. 1 as shown in FIG. 2 is in an incomplete transfer mode and tends to cause afterimages.
第３図に示すＰＮＰ構造のホト、ダイオード（１２）で
は完全空乏の状態を実現して完全転送モードとなり、残
像が除去できる。The PNP structure photodiode (12) shown in FIG. 3 achieves a completely depleted state and enters a complete transfer mode, making it possible to eliminate afterimages.
第１図の構成の固体撮像素子ではＮＰ接合の蓄積ダイオ
ードが構成されているため、不完全転送モードになるが
、さらにＮＰ接合の静電容量のみならず、ａ−８ｉ光導
電膜の静電容量が加わυ、残像を遅くする原因にもなる
。したがって、光導電体層と組み合わせた場合の蓄積ダ
イオードでも完全転送となるような構成が望ましく前述
の残像を除去できるＰＮＰ構造の蓄積ダイオードの採用
が望ましい。しかし、第１図に見るようにＮ Ｐの蓄積
ダイオードには電子が電極（６）ヲ通して流れ込む＋
−
ようになってお！；ｌ、ＰＮＰ構成では電極（６）と接
触するのはＰ−域のため光励起された電子が、Ｐ領域を
乗り越えてＮ領域に入る事が出来ず、動作しない事にな
る。The solid-state image sensor with the configuration shown in Fig. 1 has an NP junction storage diode, which results in an incomplete transfer mode. The additional capacitance υ also causes a delay in afterimage formation. Therefore, it is desirable that the storage diode, when combined with a photoconductor layer, has a configuration that allows perfect transfer, and it is desirable to employ a storage diode with a PNP structure that can eliminate the above-mentioned afterimage. However, as shown in Figure 1, electrons flow into the NP storage diode through the electrode (6).
- Be like that! ;l. In the PNP configuration, since the electrode (6) contacts the P- region, photoexcited electrons cannot cross over the P region and enter the N region, resulting in no operation.
この発明は残像の少ない光導電体と固体のスイッチング
素子と金組み合わせた固体撮像装置全提供する裏金目的
とする。The object of the present invention is to provide a solid-state imaging device that combines a photoconductor with little afterimage, a solid-state switching element, and gold.
この発明は光導電体などの光電変換部からのキャリヤの
流入口を固体のスイッチング素子の蓄積ダイオード部に
設けると共に蓄積ダイオードの大部分が完全転送の状態
になるように固体走査部全構成した固体撮像装置である
。In this invention, an inlet for carriers from a photoelectric conversion section such as a photoconductor is provided in a storage diode section of a solid-state switching element, and a solid-state scanning section is constructed entirely so that most of the storage diode is in a state of complete transfer. It is an imaging device.
この発明により、残像の少ない固体撮像素子が得られ、
低照度の被写体の撮像が可能となる。また光電変換層が
Ｓｉの固体走査部の上部にあって。According to this invention, a solid-state image sensor with less afterimage can be obtained,
It becomes possible to image a subject in low illumination. Further, a photoelectric conversion layer is provided above the Si solid-state scanning section.
入射光が８１基板に到達せず、光電変換層内で吸収され
るので、従来Ｓｉ基板内で発生したキャリヤによるスミ
アやクロストークの偽信号が無い良質の画像を再生する
固体撮像装置が得られる。Since the incident light does not reach the 81 substrate and is absorbed within the photoelectric conversion layer, it is possible to obtain a solid-state imaging device that reproduces high-quality images without the smear caused by carriers or crosstalk false signals that conventionally occur in the Si substrate. .
本発明の実施例全図面を用いて説明する。 Embodiments of the present invention will be explained using all the drawings.
第４図は本発明の一実施例を示す、蓄積ダイオ−ド部を
除いて、第１図とはｙ同じ構成となっている。蓄積ダイ
オード部（１５）の構成を図に示すようにＰＳｌ基板（
１）に対してｎ領域（１３）を形成し、さらにＰ領域（
１４）ｋ薄く表面に形成する。このＰ＋領域は全面に形
成せず、一部を残して形成しておく。さらに、ＡＩなど
の第一電極（６）がｎ領域に接触するように所定の形状
に形成する。その後の形成方法は第１図と同じような手
順で行なう。FIG. 4 shows an embodiment of the present invention, which has the same configuration as FIG. 1 except for the storage diode section. The configuration of the storage diode section (15) is shown in the figure using a PSL substrate (
For 1), an n region (13) is formed, and a p region (13) is formed.
14) Form a thin layer on the surface. This P+ region is not formed over the entire surface, but is formed with a portion left. Furthermore, a first electrode (6) made of AI or the like is formed into a predetermined shape so as to be in contact with the n region. The subsequent formation method is similar to that shown in FIG.
蓄積ダイオード部全実施例に示したような構成とすると
、ａ−８ｔなどの光導電膜（９）にて発生したキャリヤ
のうち電子が、成界により第二電極（８）に補えられ、
第一電極（９）全通って、蓄積ダイオード（１５）へ運
ばれるが、Ｐ・領域（１４）の一部が切れて、ｎ領域（
１３）への流入口となっているため％信号電荷が容易に
蓄、漬ダイオード（１５）ＶＣ＃積できる。さらに、従
来のＮＰやＮＰの構成において心配される垂直ＣＣＤ部
への不完全転送が減少し、−ＰＮＰ蓄積蓄積ダイオード
光全転送の条件を満足して残像現象が改善される。If the structure of the storage diode section is as shown in all the examples, electrons among the carriers generated in the photoconductive film (9) such as a-8T are supplemented to the second electrode (8) by field formation.
It passes through the entire first electrode (9) and is carried to the storage diode (15), but a part of the P region (14) is cut off and the n region (
13), the signal charge can be easily accumulated and multiplied by the diode diode (15) VC#. Furthermore, incomplete transfer to the vertical CCD section, which is a concern in conventional NP and NP configurations, is reduced, and the afterimage phenomenon is improved by satisfying the condition of -PNP storage diode light transfer.
蓄積ダイオードの大部分の面積において、完全転送モー
ドとなるようにダイオードの空乏化した時の電位がポリ
Ｓｉ電極（４）で決する転送ゲートの魂１立より少くと
も３００ｍＶ程度高（なれば良く、＋
Ｐ領域がこの役目全果す。信号電荷である電子の流入は
ｎ領域から行なわれるが、この領域は電極との接触が、
可能であれば出来るだけ小さい事が望ずしい。なお、Ｐ
ＮＰの構成では本来の意味のダイオードからはずれるが
、機能としてＮＰのダイオードが主として働らくのでＰ
ＮＰも蓄積ダイオードと呼ぶことにする。In most areas of the storage diode, the potential when the diode is depleted is at least 300 mV higher than the voltage of the transfer gate determined by the poly-Si electrode (4), so that it is in complete transfer mode. + The P region fulfills this role.Electrons, which are signal charges, flow in from the n region, but the contact with the electrode in this region is
It is desirable that it be as small as possible. In addition, P
The NP configuration deviates from the original meaning of a diode, but since the NP diode primarily functions as a function, it is
NP will also be called a storage diode.
第５図に本発明の他の実施例を示す。前述の実６ｍ例と
同じく蓄積ダイオード（１７）の構成が従来例と異なる
。FIG. 5 shows another embodiment of the invention. As with the actual 6m example described above, the configuration of the storage diode (17) is different from the conventional example.
蓄積ダイオードの大部分が完全転送の状態となるように
ＰＮＰ構成全成金点は第４図の実姉例と同じであるが、
信号電荷である電子が流入する場所ｉｎ領域（１６）と
して蓄積ダイオード（１７）ｔ−構成した例である。電
子の流入はＡＩの第一電極（６）かうｎ ’を域（１３
）へなされるがｒ傾城（１６）の存在によ！ｌｌｔ悌と
の１気的接触が良好となり、遊子がより簡単に流入出来
るようになる。図示の実施例の構成ではｎ領域に、Ｉ！
：績ダイオードの全面に形成しておいた後にｎ−領域全
形成する。図ではｎ領域とＰ＋領域の深さ全回じにしで
あるが、これに限る事は無い。All the metal forming points of the PNP configuration are the same as the actual sister example in Fig. 4 so that most of the storage diodes are in a perfect transfer state.
This is an example in which a storage diode (17) is configured as an in region (16) where electrons, which are signal charges, flow. The inflow of electrons is caused by the first electrode (6) of AI or the area n' (13
) due to the existence of r Kangjyo (16)! 1st air contact with llt 悌 will be better, and Yuko will be able to flow in more easily. In the configuration of the illustrated embodiment, in the n region, I!
: After forming on the entire surface of the diode, the entire n-region is formed. In the figure, the depths of the n area and the P+ area are all the way, but the invention is not limited to this.
上記実施例では、信号電荷の流入する電極が第一の上極
と第二の電極に分かれている例について説明したが、こ
れに限らず単一の′酸他でも良い事＋
は勿論である。また成極の接触部分はｎまたはｎ領域よ
り小さいかあるいは等しい例を図示したが。In the above embodiment, an example was explained in which the electrode into which the signal charge flows is divided into the first upper electrode and the second electrode, but the invention is not limited to this, and it is of course possible to use a single acid or the like. . In addition, an example is shown in which the contact portion for polarization is smaller than or equal to n or n area.
これＶこ限らず電極の接触部分がｎ領域に延びていても
良い。ｎやＬ１領域とさえ接触していればその部分ｋ
ｉｔｈして信号電荷が流入出来るので、流入が紐かしい
ｎ領域に接触していても構わない。This is not limited to V, and the contact portion of the electrode may extend to the n region. As long as it is in contact with the n and L1 regions, that part k
Since the signal charges can flow in, it does not matter if the signal charges are in contact with the n region where the inflow is difficult.
また実施例では信号電荷として転送するキャリヤｗＮ子
として説明したが、キャリヤが正一孔の場合にはｐ型と
ｐ型をすべて逆にすれば良（／１事（ま明らかである。Further, in the embodiment, the explanation has been made using carriers wN to be transferred as signal charges, but if the carrier is a positive hole, it is sufficient to reverse the p-type and p-type (/1).
また、光′闇変換部は光導電形のみならず、光起電力形
でも良い事は勿論である。Furthermore, it goes without saying that the light/dark converter may be of a photoconductive type as well as a photovoltaic type.
いずれにしろ光′心変換部からの信号電荷を垂直ＣＯＤ
へ転送するまでの間に存在する蓄積部分のダイオード構
成が単なるＰＮ形式で無く、転送が完全転送モードとな
るように薄いＰ＋層を配しｆＣＰ＋ＮＰ−形式で大部分
が構成され、完全１倭モードを実現する２層の一部に侶
号電１ｕＪが流入出来る部分つまり、信号電荷と同じ４
電形（電子の場合はｎ形、正孔の擲合はｐ形）部分が存
在していれば良い。In any case, the signal charge from the optical center converter is converted into a vertical COD.
The diode configuration of the storage part that exists until the transfer is not just a PN type, but a thin P+ layer is arranged so that the transfer is in a complete transfer mode, and most of it is configured in an fCP+NP- type, making it a complete 1-Wa mode. In other words, the part where the signal charge 1uJ can flow into the part of the second layer that realizes the signal charge is 4
It is sufficient that an electric type (n-type for electrons, p-type for holes) exists.
また、上記９ご流物てはＳｉ基板がｐやｐ−型について
述べたが１例えばｎ基板にｐ形を拡散した構造に蓄積ダ
イオードやＣＣＤを形成しても良い。Further, in the above 9 items, the Si substrate is of p type or p- type, but for example, a storage diode or a CCD may be formed in a structure in which p type is diffused into an n substrate.
さらＶこ基板としてＳｉに限らず、半導体にて固体走食
部を製作する時には、本発明が適用できる。Furthermore, the present invention can be applied to fabricating a solid-state etching section using a semiconductor other than Si as a V-substrate.
第１図は従来の光電変換部と固体走査部からなる固体撮
像素子の断面図、第２図は従来の固体撮像素子の断面図
、〆３図は残像を改善した固体撮像素子の断面図、第４
図は本発明の光電変換部と固体疋青部からなる固体撮像
集子の断面図、及び第５図は本発明の固体撮は素子の他
の実施例である。
１・・・ｐ形ＳＩ糸板、２・・・垂直ＣＣＤ、３・・・
蓄積ダイオード、４・・・ボ１ＪＳｉ電倹、５・・・第
一酸化膜、６・・・第一電極、７・・・第二酸化膜、８
・・・第二電極、９ ・元導電体層、１０・・・透明導
電膜、１１・・・平滑化酸化１ａ、 １２・・・光導
′電膜、１３・・・ｎ領域、１４・・・ｐ＋狽域、１５
・・・蓄積ダイオード、１６・・・ｎ領域、１７・・・
蓄積グ・ｆオード。
代理人弁理士 則 近′憲 佑（ほか１名）第１図
第 ２ 図Fig. 1 is a sectional view of a conventional solid-state image sensor consisting of a photoelectric conversion section and a solid-state scanning section, Fig. 2 is a sectional view of a conventional solid-state image sensor, and Fig. 3 is a sectional view of a solid-state image sensor with improved afterimage. Fourth
The figure is a cross-sectional view of a solid-state imaging element comprising a photoelectric conversion part and a solid-state bituminous part according to the invention, and FIG. 5 shows another embodiment of the solid-state imaging element according to the invention. 1... p-type SI thread plate, 2... vertical CCD, 3...
Storage diode, 4... Bo1JSi electricity, 5... First oxide film, 6... First electrode, 7... Second oxide film, 8
...Second electrode, 9. Original conductor layer, 10.. Transparent conductive film, 11.. Smoothing oxidation 1a, 12.. Photoconductive film, 13.. N region, 14..・p+lock area, 15
...Storage diode, 16...n region, 17...
Accumulation group f-ode. Representative Patent Attorney Noriyuki Chika (and 1 other person) Figure 1 Figure 2
Claims (1)
形成された固体走査部を有する固体撮像素子において、
該光電変換部からの信号電荷を蓄積する半導体基板に設
けられた蓄積ダイオードの表面の一部分が、信号電荷と
同じ導電形の層で形成され、他の大部分の表面は信号電
荷と反対の導電形の層で形成され、光電変換部からの電
気的接触が少な（とも前記信号宵、荷と同じ導電形の層
になされて信号′を電荷の蓄積ダイオードへの流入を容
易にすると共に、前記信号電荷と反対の導電形の層で表
面全形成された蓄積ダイオード部分が、同じく半導体基
板に設けられた読み出し部への電荷In a solid-state image sensor having a photoelectric conversion section provided on a semiconductor substrate and a solid-state scanning section formed on the semiconductor substrate,
A part of the surface of the storage diode provided on the semiconductor substrate that stores signal charges from the photoelectric conversion section is formed of a layer of the same conductivity type as the signal charges, and most of the other surface is formed of a layer of the same conductivity type as the signal charges. It is formed of a layer of the same conductivity type as the signal, and there is little electrical contact from the photoelectric conversion part (both the signal and the charge are formed in a layer of the same conductivity type as the signal, which facilitates the flow of the signal into the charge storage diode, and The storage diode part, whose entire surface is made of a layer of conductivity type opposite to that of the signal charge, stores the charge to the readout section also provided on the semiconductor substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58052730A JPS59178769A (en) | 1983-03-30 | 1983-03-30 | Solid-state image pickup device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58052730A JPS59178769A (en) | 1983-03-30 | 1983-03-30 | Solid-state image pickup device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59178769A true JPS59178769A (en) | 1984-10-11 |
| JPH0430192B2 JPH0430192B2 (en) | 1992-05-21 |
Family
ID=12923039
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58052730A Granted JPS59178769A (en) | 1983-03-30 | 1983-03-30 | Solid-state image pickup device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59178769A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006253321A (en) * | 2005-03-09 | 2006-09-21 | Fuji Photo Film Co Ltd | Solid state image sensor |
| JP2009065166A (en) * | 2007-09-07 | 2009-03-26 | Dongbu Hitek Co Ltd | Image sensor, and manufacturing method thereof |
| JP2009065163A (en) * | 2007-09-07 | 2009-03-26 | Dongbu Hitek Co Ltd | Image sensor, and manufacturing method thereof |
| JP2009117802A (en) * | 2007-09-07 | 2009-05-28 | Dongbu Hitek Co Ltd | Image sensor, and manufacturing method thereof |
| JP2009158930A (en) * | 2007-12-27 | 2009-07-16 | Dongbu Hitek Co Ltd | Image sensor and method of manufacturing the same |
| JP2009158929A (en) * | 2007-12-27 | 2009-07-16 | Dongbu Hitek Co Ltd | Image sensor and method for manufacturing the same |
| JP2009188380A (en) * | 2007-12-28 | 2009-08-20 | Dongbu Hitek Co Ltd | Image sensor and method for manufacturing the same |
| WO2012105106A1 (en) * | 2011-02-04 | 2012-08-09 | 富士フイルム株式会社 | Method for manufacturing solid-state imaging element, solid-state imaging element, and imaging device |
-
1983
- 1983-03-30 JP JP58052730A patent/JPS59178769A/en active Granted
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006253321A (en) * | 2005-03-09 | 2006-09-21 | Fuji Photo Film Co Ltd | Solid state image sensor |
| JP4572130B2 (en) * | 2005-03-09 | 2010-10-27 | 富士フイルム株式会社 | Solid-state image sensor |
| JP2009065166A (en) * | 2007-09-07 | 2009-03-26 | Dongbu Hitek Co Ltd | Image sensor, and manufacturing method thereof |
| JP2009065163A (en) * | 2007-09-07 | 2009-03-26 | Dongbu Hitek Co Ltd | Image sensor, and manufacturing method thereof |
| JP2009117802A (en) * | 2007-09-07 | 2009-05-28 | Dongbu Hitek Co Ltd | Image sensor, and manufacturing method thereof |
| JP2009158930A (en) * | 2007-12-27 | 2009-07-16 | Dongbu Hitek Co Ltd | Image sensor and method of manufacturing the same |
| JP2009158929A (en) * | 2007-12-27 | 2009-07-16 | Dongbu Hitek Co Ltd | Image sensor and method for manufacturing the same |
| JP2009188380A (en) * | 2007-12-28 | 2009-08-20 | Dongbu Hitek Co Ltd | Image sensor and method for manufacturing the same |
| US8178912B2 (en) | 2007-12-28 | 2012-05-15 | Dongbu Hitek Co., Ltd. | Image sensor for minimizing a dark current and method for manufacturing the same |
| WO2012105106A1 (en) * | 2011-02-04 | 2012-08-09 | 富士フイルム株式会社 | Method for manufacturing solid-state imaging element, solid-state imaging element, and imaging device |
| JP2012164780A (en) * | 2011-02-04 | 2012-08-30 | Fujifilm Corp | Solid state imaging element manufacturing method, solid state imaging element, and imaging device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0430192B2 (en) | 1992-05-21 |
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