JPS59177923A - 半導体への硼素拡散方法 - Google Patents

半導体への硼素拡散方法

Info

Publication number
JPS59177923A
JPS59177923A JP58052079A JP5207983A JPS59177923A JP S59177923 A JPS59177923 A JP S59177923A JP 58052079 A JP58052079 A JP 58052079A JP 5207983 A JP5207983 A JP 5207983A JP S59177923 A JPS59177923 A JP S59177923A
Authority
JP
Japan
Prior art keywords
hydrogen
diffusion
boron
fed
nitrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58052079A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0586650B2 (https=
Inventor
Akio Saito
昭男 斉藤
Mitsuo Omi
大海　三男
Mitsuo Kishimoto
岸本　光雄
Kazuaki Matsuura
松浦　一晃
Yoshihiko Katsumoto
勝本　喜彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp, Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electronics Corp
Priority to JP58052079A priority Critical patent/JPS59177923A/ja
Publication of JPS59177923A publication Critical patent/JPS59177923A/ja
Publication of JPH0586650B2 publication Critical patent/JPH0586650B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material

Landscapes

  • Formation Of Insulating Films (AREA)
JP58052079A 1983-03-28 1983-03-28 半導体への硼素拡散方法 Granted JPS59177923A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58052079A JPS59177923A (ja) 1983-03-28 1983-03-28 半導体への硼素拡散方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58052079A JPS59177923A (ja) 1983-03-28 1983-03-28 半導体への硼素拡散方法

Publications (2)

Publication Number Publication Date
JPS59177923A true JPS59177923A (ja) 1984-10-08
JPH0586650B2 JPH0586650B2 (https=) 1993-12-13

Family

ID=12904808

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58052079A Granted JPS59177923A (ja) 1983-03-28 1983-03-28 半導体への硼素拡散方法

Country Status (1)

Country Link
JP (1) JPS59177923A (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4857480A (en) * 1986-10-29 1989-08-15 Mitel Corporation Method for diffusing P-type material using boron disks
JPH0574727A (ja) * 1991-03-20 1993-03-26 Shin Etsu Handotai Co Ltd 半導体ウエーハへの硼素拡散方法
JP2008028222A (ja) * 2006-07-24 2008-02-07 Takaoka Kasei Kogyo Kk モールド変圧器

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5538046A (en) * 1978-09-12 1980-03-17 Toshiba Corp Transformer for condenser type meter
JPS56169322A (en) * 1980-05-30 1981-12-26 Fujikura Ltd Selective diffusion of boron into silicon

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5538046A (en) * 1978-09-12 1980-03-17 Toshiba Corp Transformer for condenser type meter
JPS56169322A (en) * 1980-05-30 1981-12-26 Fujikura Ltd Selective diffusion of boron into silicon

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4857480A (en) * 1986-10-29 1989-08-15 Mitel Corporation Method for diffusing P-type material using boron disks
JPH0574727A (ja) * 1991-03-20 1993-03-26 Shin Etsu Handotai Co Ltd 半導体ウエーハへの硼素拡散方法
EP0504857A3 (en) * 1991-03-20 1995-04-12 Shinetsu Handotai Kk Process of diffusing boron into semiconductor wafers
JP2008028222A (ja) * 2006-07-24 2008-02-07 Takaoka Kasei Kogyo Kk モールド変圧器

Also Published As

Publication number Publication date
JPH0586650B2 (https=) 1993-12-13

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