JPS5917288A - 入射位置検出用半導体装置 - Google Patents

入射位置検出用半導体装置

Info

Publication number
JPS5917288A
JPS5917288A JP57126242A JP12624282A JPS5917288A JP S5917288 A JPS5917288 A JP S5917288A JP 57126242 A JP57126242 A JP 57126242A JP 12624282 A JP12624282 A JP 12624282A JP S5917288 A JPS5917288 A JP S5917288A
Authority
JP
Japan
Prior art keywords
conductive layer
incident
semiconductor substrate
semiconductor device
position signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57126242A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6262074B2 (enrdf_load_stackoverflow
Inventor
Seiji Yamaguchi
誠二 山口
Akinaga Yamamoto
晃永 山本
Toshihiko Tomita
俊彦 富田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu TV Co Ltd
Original Assignee
Hamamatsu TV Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu TV Co Ltd filed Critical Hamamatsu TV Co Ltd
Priority to JP57126242A priority Critical patent/JPS5917288A/ja
Publication of JPS5917288A publication Critical patent/JPS5917288A/ja
Publication of JPS6262074B2 publication Critical patent/JPS6262074B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers

Landscapes

  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
JP57126242A 1982-07-20 1982-07-20 入射位置検出用半導体装置 Granted JPS5917288A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57126242A JPS5917288A (ja) 1982-07-20 1982-07-20 入射位置検出用半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57126242A JPS5917288A (ja) 1982-07-20 1982-07-20 入射位置検出用半導体装置

Publications (2)

Publication Number Publication Date
JPS5917288A true JPS5917288A (ja) 1984-01-28
JPS6262074B2 JPS6262074B2 (enrdf_load_stackoverflow) 1987-12-24

Family

ID=14930307

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57126242A Granted JPS5917288A (ja) 1982-07-20 1982-07-20 入射位置検出用半導体装置

Country Status (1)

Country Link
JP (1) JPS5917288A (enrdf_load_stackoverflow)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59127883A (ja) * 1983-01-12 1984-07-23 Matsushita Electronics Corp 感光半導体装置
JPS6390181A (ja) * 1986-10-03 1988-04-21 Rikagaku Kenkyusho 半導体位置検出素子
JPS63289876A (ja) * 1987-05-21 1988-11-28 Hamamatsu Photonics Kk 高速応答光位置検出器
JPH01115170A (ja) * 1987-10-29 1989-05-08 Hamamatsu Photonics Kk 入射位置検出用半導体装置
JPH01115172A (ja) * 1987-10-29 1989-05-08 Hamamatsu Photonics Kk 入射位置検出用半導体装置
JPH01115169A (ja) * 1987-10-29 1989-05-08 Hamamatsu Photonics Kk 入射位置検出用半導体装置
JPH01143427U (enrdf_load_stackoverflow) * 1988-03-28 1989-10-02
JPH0480071U (enrdf_load_stackoverflow) * 1990-11-26 1992-07-13
WO2000041248A1 (en) * 1998-12-28 2000-07-13 Hamamatsu Photonics K.K. Semiconductor position detector and range finder using the same

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59127883A (ja) * 1983-01-12 1984-07-23 Matsushita Electronics Corp 感光半導体装置
JPS6390181A (ja) * 1986-10-03 1988-04-21 Rikagaku Kenkyusho 半導体位置検出素子
JPS63289876A (ja) * 1987-05-21 1988-11-28 Hamamatsu Photonics Kk 高速応答光位置検出器
JPH01115170A (ja) * 1987-10-29 1989-05-08 Hamamatsu Photonics Kk 入射位置検出用半導体装置
JPH01115172A (ja) * 1987-10-29 1989-05-08 Hamamatsu Photonics Kk 入射位置検出用半導体装置
JPH01115169A (ja) * 1987-10-29 1989-05-08 Hamamatsu Photonics Kk 入射位置検出用半導体装置
JPH01143427U (enrdf_load_stackoverflow) * 1988-03-28 1989-10-02
JPH0480071U (enrdf_load_stackoverflow) * 1990-11-26 1992-07-13
WO2000041248A1 (en) * 1998-12-28 2000-07-13 Hamamatsu Photonics K.K. Semiconductor position detector and range finder using the same
US6529281B2 (en) 1998-12-28 2003-03-04 Hamamatsu Photonics K.K. Position sensitive detectors and distance measuring apparatus using them

Also Published As

Publication number Publication date
JPS6262074B2 (enrdf_load_stackoverflow) 1987-12-24

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