JPS59165423A - Tapered etching of organic resin film - Google Patents
Tapered etching of organic resin filmInfo
- Publication number
- JPS59165423A JPS59165423A JP3891083A JP3891083A JPS59165423A JP S59165423 A JPS59165423 A JP S59165423A JP 3891083 A JP3891083 A JP 3891083A JP 3891083 A JP3891083 A JP 3891083A JP S59165423 A JPS59165423 A JP S59165423A
- Authority
- JP
- Japan
- Prior art keywords
- organic resin
- etching
- taper angle
- polyimide
- system organic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 title claims abstract description 53
- 239000011347 resin Substances 0.000 title claims abstract description 51
- 229920005989 resin Polymers 0.000 title claims abstract description 51
- 239000004642 Polyimide Substances 0.000 claims abstract description 43
- 229920001721 polyimide Polymers 0.000 claims abstract description 43
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims description 15
- 238000001312 dry etching Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 4
- 239000010408 film Substances 0.000 description 20
- 239000007789 gas Substances 0.000 description 13
- 239000010409 thin film Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 150000003949 imides Chemical class 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 241000238558 Eucarida Species 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- WOYXQCUBRRZMPN-UHFFFAOYSA-N ethene;hydrochloride Chemical compound Cl.C=C.C=C.C=C WOYXQCUBRRZMPN-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Magnetic Heads (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Drying Of Semiconductors (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、層間絶縁膜用ポリイミド系有機樹脂のエツチ
ング方法に係り、特に薄膜磁気ヘッド喝好適なポリイミ
ド系有機樹脂のテーパーエツチング方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a method for etching a polyimide organic resin for an interlayer insulating film, and more particularly to a method for taper etching a polyimide organic resin suitable for thin film magnetic heads.
ＩＣや薄膜磁気ヘッド等の製造において、シリ。 Siri is used in the manufacture of ICs, thin film magnetic heads, etc.
コンウェファ上に回路図形を転写していく技術を。A technology that transfers circuit diagrams onto a conwafer.
ホトエツチングといっている。It's called photo etching.
ホトエツチングの工程を第１図により説明する“が、こ
こでは、ポリイミド系有機樹脂をエツチングする場合に
ついて述べる。The photoetching process will be explained with reference to FIG. 1, but here, the case of etching a polyimide organic resin will be described.
第１図α）に示したように、基板１の上にはポリ１、イ
ミド系有機樹脂２が形成されている。薄膜磁気ヘッドの
製造工程においては、ポリイミド系有機樹脂２め層内に
コイルを形成する必要があるが、このコイルはドライエ
ツチングにより形成されるため、ポリイミド系有機樹脂
２にはイオン照射を）受ける部分と受けない部分が生ず
る。As shown in FIG. 1 α), poly 1 and imide organic resin 2 are formed on a substrate 1. As shown in FIG. In the manufacturing process of thin-film magnetic heads, it is necessary to form a coil in the second layer of polyimide-based organic resin, but since this coil is formed by dry etching, the polyimide-based organic resin 2 is exposed to ion irradiation. There will be some parts that will not be accepted.
次に１有機樹脂膜２の上にレジスト膜３を塗布し、レジ
スト膜３と有機樹脂膜２との接着性を強めるため、熱処
理炉でブレベークする。レジスト膜３の上にホトマスク
４を重ね、レジスト膜３を５矢印Ｐのように露光してマ
スク図形をレジスト膜３上に焼付ける（第１図■）。尚
、レジスト膜ａには、通常ネガ型ホトレジストであるＯ
ＭＲ−８３が用いられる。Next, a resist film 3 is applied onto the first organic resin film 2, and in order to strengthen the adhesion between the resist film 3 and the organic resin film 2, it is bre-baked in a heat treatment furnace. A photomask 4 is placed on the resist film 3, and the resist film 3 is exposed in the direction of arrow P to print a mask pattern on the resist film 3 (FIG. 1 -). Note that the resist film a contains O, which is usually a negative photoresist.
MR-83 is used.
露光しただけでは、レジスト膜３上に図形な見ることが
できない。そこで、現像液で未露光部の。No figure can be seen on the resist film 3 simply by exposure. Then, remove the unexposed areas with a developer.
レジストを溶解除去する。次に、直ちにリンス液。Dissolve and remove the resist. Then rinse immediately.
に浸し、窒素等を吹付けて液を吹飛ばして乾燥さ・ゼ、
最後に熱処理炉でポストベークして残留しでいるリンス
液を蒸発させ、レジスト膜３の下地に５対する接着力と
耐薬品性を強める（第１図Ｃ３））。・次に、エツチン
グした後、不要のレジストを除去（第１図件））シて目
的の図形を得るわけである・が、エツチング方法には溶
解液による湿式（ウニ。Soak it in water, blow off the liquid with nitrogen, etc., and dry it.
Finally, the resist film 3 is post-baked in a heat treatment furnace to evaporate the remaining rinsing liquid and strengthen the adhesive strength and chemical resistance of the resist film 3 to the underlying layer 5 (FIG. 1 C3)).・Next, after etching, unnecessary resist is removed (Fig. 1) to obtain the desired pattern.
ットエッチング）と反応性ガスによる乾式（ド′７１Ｏ
イエッチング）とがある。通常、ポリイミド系有機樹脂
のエツチングは、湿式で行われており、ネガ型ホトレジ
スト（ＯＭＲ−８３）をマスク材どして、無水ヒドラジ
ン（ＮＨ，ＮＨ，）とエチレンジ。etching) and dry etching using reactive gas (do'71O
etching). Usually, polyimide-based organic resin is etched by a wet method, using a negative photoresist (OMR-83) as a mask material and etching anhydrous hydrazine (NH, NH, ) and ethylene diethylene chloride.
アミン（Ｈ，Ｎ （ＯＨ，） 、ＮＨ，）との比率が７
対３の５エツチング液を３０°Ｃ前後に加熱して、エツ
チングを行う。The ratio of amines (H,N (OH,), NH,) is 7
Etching is performed by heating the 3-5 etching solution to around 30°C.
この方式ではエツチングの進行と同時にエラ乏ング液が
レジスト膜３とポリイミド系有機樹脂２との界面から浸
み込み、ポリイミド系有機樹脂側。In this method, as the etching progresses, the etching solution permeates from the interface between the resist film 3 and the polyimide organic resin 2, and the etching process penetrates into the polyimide organic resin side.
面にテーパ角θ、 （第１図（４））をもたらす。この
テーパ角θは、特に薄膜磁気ヘッドにおいては、ヘッド
の磁気特性に影響を与えるため非常に重要である。A taper angle θ, (Fig. 1 (4)) is created on the surface. This taper angle θ is very important, especially in thin-film magnetic heads, since it affects the magnetic characteristics of the head.
しかし、湿式エツチングによるポリイミド系有機樹脂２
のテーパ角は、レジスト膜３の密着性、エツチング時間
により決まるため、テーパ角を制御することは困難であ
る。薄膜磁気ヘッドのように、絶縁用、として厚いポリ
イミド系有機樹脂膜を形成する場合は、テーパ角の制御
は更に秤しくなする。また、湿式エツチングでは、イオ
ン照射を受けたポリイミド系有機樹脂表面は、そのまま
の状態ではエツチングできず、一旦、０．プラズマアッ
シング処理を行った後でなければエツチングできない。However, polyimide organic resin 2 produced by wet etching
The taper angle is determined by the adhesion of the resist film 3 and the etching time, so it is difficult to control the taper angle. When forming a thick polyimide-based organic resin film for insulation, such as in a thin-film magnetic head, the control of the taper angle becomes even more delicate. Furthermore, in wet etching, the surface of the polyimide organic resin that has been irradiated with ions cannot be etched in its original state; Etching cannot be performed unless plasma ashing is performed.
本発明の目的は、膜厚の厚いポリイミド系有機樹脂膜の
テーパ角を高精度で制御してエツチングすることのでき
る有機樹脂膜のテーパエツチング方法を提供することに
ある。SUMMARY OF THE INVENTION An object of the present invention is to provide a method for taper etching a thick polyimide organic resin film by controlling the taper angle of the film with high precision.
上記目的を達成するため、本発明は、基板上のポリイミ
ド系有機樹脂を反応性ガスを用いて乾式エツチングする
際に、マスクパターンとなるホトレジストのポストベー
ク温度を制御し、反応性ガスはＣＦ４ と０．との混合
ガスとし、該混合ガスの混合比および圧力を制御するこ
とによりポリイ・ミド系有機樹脂をテーパエツチングす
ることを特徴とする。In order to achieve the above object, the present invention controls the post-bake temperature of the photoresist that becomes the mask pattern when dry etching the polyimide organic resin on the substrate using a reactive gas, and the reactive gas is CF4 and 0. The polyimide organic resin is taper etched by controlling the mixing ratio and pressure of the mixed gas.
以下、本発明の一実施例を図面を用いて説明する。 An embodiment of the present invention will be described below with reference to the drawings.
本実施例のテーパーエツチング方法が適用される被加工
物は、第７図（ａ）に示し、たように、基板１の上にポ
リイミド系有機樹脂２をスピンコード、１５熱硬化し、
この上にポジ型ホトレジストのマスク材３′が形成され
ている。本実施例の目的は、この被加工物をエツチング
することにより、第７図（Ｑ）に示したように、ポリイ
ミド系有機樹脂２より成る層間絶縁膜に所定のテーパ角
θ′８を設げることである。し炉し、■米の湿式エツチ
ングではテ：パ角制御が困難であるため、本実施例では
ドライ”エツチング方式を採用した。エツチング装置は
、リアクティブスパッタエツチング装置又はプラズマエ
ツチング装置を用いた。The workpiece to which the taper etching method of this embodiment is applied is shown in FIG. 7(a), as shown in FIG.
A positive photoresist mask material 3' is formed on this. The purpose of this example is to provide a predetermined taper angle θ'8 in the interlayer insulating film made of polyimide organic resin 2, as shown in FIG. 7(Q), by etching this workpiece. Is Rukoto. Since it is difficult to control the taper angle in the wet etching method, a dry etching method was adopted in this example.A reactive sputter etching device or a plasma etching device was used as the etching device.
第２図に、反応性ガスにＯ２を用いた場合のポリイミド
系有機樹脂２とポジ型ホトレジスト３′のエツチングレ
ートな示す。この場合、エツチングレートは加速度的に
増加し、両者のエツチングレートの差も時間と共に大き
くなる。従って、反応性ガスにＯｌを用いて、ポリイミ
ド系有機樹脂２のテーパ角とエツチング量をエツチング
時間により制御することは困難である。FIG. 2 shows the etching rates of the polyimide organic resin 2 and the positive type photoresist 3' when O2 is used as the reactive gas. In this case, the etching rate increases at an accelerated rate, and the difference between the two etching rates also increases with time. Therefore, it is difficult to control the taper angle and etching amount of the polyimide-based organic resin 2 by the etching time using OI as the reactive gas.
第３図に反応性ガスにＣＦ、とＯ３の混合ガスを用いた
場合のポリイミド系有機樹脂２とポジ型ホトレジスト３
′のエツチングレートな示す。エツチング深さはエツチ
ング時間に比例し、また両者のエツチングレートの差は
小さい。エラチンブレｉ゛ トは、混合ガスの圧力、Ｃ
Ｆ、とＯ２との混合比により変化する。Figure 3 shows polyimide organic resin 2 and positive photoresist 3 when a mixed gas of CF and O3 is used as the reactive gas.
' shows the etching rate. The etching depth is proportional to the etching time, and the difference in etching rate between the two is small. The elastomer plate is the pressure of the mixed gas, C
It changes depending on the mixing ratio of F and O2.
その変化を第４図、第５図に示す。第４図は、。The changes are shown in FIGS. 4 and 5. Figure 4 shows.
ＣＦ、とＯ８との混合比を変化させた時のポリイミ。Polyimide when changing the mixing ratio of CF and O8.
ド系有機樹脂２とポジ型ホトレジスト３′のエツチング
レートな示している。図から、対ＣＦ、比４０％〜６０
％の０．の場合に両者のエツチングレートの差が小さい
ことが分かる。第５図はＣＦ、と・０、との混合ガスの
圧力を変化させた時のポリイ・ミド系有機樹脂２とポジ
型ホトレジスト３′のエツチングレートを示している。The etching rates of the hard organic resin 2 and the positive type photoresist 3' are shown. From the figure, the ratio to CF is 40% to 60
% of 0. It can be seen that the difference in etching rate between the two is small in the case of . FIG. 5 shows the etching rate of the polyimide organic resin 2 and the positive type photoresist 3' when the pressure of the mixed gas of CF and .0 is changed.
図から圧力は小さい方が両者のエツチングレートの差は
小さいことが理解できる。It can be seen from the figure that the smaller the pressure, the smaller the difference in etching rate between the two.
これらの結果から、ＣＦ、とＯ８との混合比と、。From these results, the mixing ratio of CF and O8.
混合ガスの圧力を適当に選ぶことにより、ポリイミド系
有機樹脂２とポジ型ホトレジスト３′とのエツチングレ
ート差が小さい領域でエツチングでき。By appropriately selecting the pressure of the mixed gas, etching can be performed in a region where the difference in etching rate between the polyimide organic resin 2 and the positive type photoresist 3' is small.
るので、エツチング後のポリイミド系有機樹脂２のテー
バには、ポジ型ホトレジストパターンのテーパ角が転写
される。Therefore, the taper angle of the positive photoresist pattern is transferred to the taper of the polyimide organic resin 2 after etching.
更に、第３図に示したように、ポリイミド系有機樹脂２
とポジ型ホトレジスト３′のエツチング深さは、共に時
間に比例しているので、エツチング量を時間で制御する
事が容易である。Furthermore, as shown in FIG. 3, polyimide organic resin 2
Since the etching depths of the positive type photoresist 3' and the photoresist 3' are both proportional to time, it is easy to control the amount of etching with time.
第６図に・ポジ型ホトレジストポストベーク温度とポリ
イミド系有機樹脂テーパ角との関係を示すＯこの図より
、ポリイミド系有機樹脂のテーパ角は、ポジ型ホトレジ
ストポスシベーク温度を変化させることにより制御でき
ることがわかる。従って、・ホトレジストを形成する際
に、ポリイミド系有機樹脂の目標テーパ角に応じた温度
で、ホトレジストをポストベークすればよい。また、ポ
リイミド系有機樹脂の目標テーパ角は、ホトレジスト密
着性に影響されることはない。更に、このエツチング方
法によれば、イオン照射を受けたポリイミド系有機樹脂
表面と、受けていない表面のエツチングレートに差はな
い。Figure 6 shows the relationship between the positive photoresist postbake temperature and the polyimide organic resin taper angle. From this figure, the taper angle of the polyimide organic resin can be controlled by changing the positive photoresist postbake temperature. I know what I can do. Therefore, when forming the photoresist, the photoresist may be post-baked at a temperature that corresponds to the target taper angle of the polyimide organic resin. Furthermore, the target taper angle of the polyimide organic resin is not affected by photoresist adhesion. Furthermore, according to this etching method, there is no difference in the etching rate between the surface of the polyimide organic resin that has been ion irradiated and the surface that has not.
第７図はエツチング進行状態を示す。ポジ型ホトレジス
ト３は、前述のようにポリイミド系有機樹脂２の目標テ
ーパ角θ８に応じた温度でポストベークされ、テーパ角
θ、を有している。ＯＦ、。FIG. 7 shows the progress of etching. As described above, the positive photoresist 3 is post-baked at a temperature corresponding to the target taper angle θ8 of the polyimide organic resin 2, and has a taper angle θ. OF,.
とＯとの混合比及び圧力を適当に選んで、ポ免１
イミド系有機樹脂とポジ型ホトレジストとのエツチング
レート差を極小にすれば、第７図（＆）に破線で示した
表面からの深さの等しい面までが同一時間経過後にエツ
チングされて第７図（ｂ）のようになり、さらには第７
図（０）のように、深さ方向・のボ央イミド系有機樹脂
は完全に浸しよくされる。その結果、ポジ型ホ゛トレジ
ストのテーパ角θ、はポリイミド系有機樹脂のテーバに
転写されるので、ポリイミド系有機樹脂のテーパ角θ、
とポジ型ホトレジストのテーパ角θ、とは等しくなる。By appropriately selecting the mixing ratio and pressure of O and O to minimize the difference in etching rate between the imide-based organic resin and the positive photoresist, it is possible to minimize the etching rate difference between the imide-based organic resin and the positive photoresist. The surfaces with the same depth are etched after the same amount of time has elapsed, resulting in the pattern shown in Figure 7(b).
As shown in Figure (0), the boimide organic resin in the depth direction is thoroughly soaked. As a result, the taper angle θ of the positive photoresist is transferred to the taper of the polyimide organic resin, so the taper angle θ of the polyimide organic resin
and the taper angle θ of the positive photoresist are equal.
尚、本実施例では、ホトレジストとしてポジ型を用いた
が、ネガ型を用いてもポリイミド系有機樹脂膜のテーパ
角を制御できる゛ことは言うまでもない。In this embodiment, a positive type photoresist was used, but it goes without saying that the taper angle of the polyimide organic resin film can also be controlled using a negative type photoresist.
また、ポリイミド系有機樹脂テーバ上の膜付きへまわり
を向上させ、薄膜磁気ヘッドに適用ずれば磁気ヘッド性
能を向上させることができる。Furthermore, by improving the film adhesion on the polyimide-based organic resin taber and applying it to a thin-film magnetic head, the performance of the magnetic head can be improved.
以上説明したように、本発明によれば、膜厚の厚いポリ
イミド系有機樹脂のテーパ角を高精度に制御してテーバ
エツチングすることができる。As explained above, according to the present invention, the taper angle of a thick polyimide-based organic resin can be controlled with high precision to perform Taber etching.
第１図はホＦエツチングの工程を説明するための図、第
２図は０．ガスを使用、したドライエツチング方式のエ
ツチングレート、第３図はＣＦ、とＯ３との混合ガスを
使用したドライエツチング方式のエツチングレート、第
４図はＣＦ４とＯ３の混合比とエツチングレートとの関
係、第６図はＣＦ４と０゜の混合ガス圧力とエツチング
レートとの関係、第６図はポジ型ホトレジストポストベ
ーク温度とポリイミド系有機樹脂テーパ角との関係、第
７図は本実施例のエツチングの進行状態を示す図である
。
ｌ；基板、２：ポリイミド系有機樹脂、３′：ポジ型ホ
トレジスト、θ、：ポジ型ホトレジストのテーパ角、Ｏ
８！テーパエツチングされたポリイミド系有機樹脂のテ
ーパ角。
第 １ 図
第 ２ 図
第 ３ 図
第 牛 図
ト
ロ
ホトレジストボストベーク塩ｆｆ（”Ｃ）第 ７
図
３′
１ （ａ）Fig. 1 is a diagram for explaining the process of etching, and Fig. 2 is a diagram for explaining the etching process. Fig. 3 shows the etching rate of the dry etching method using a mixed gas of CF and O3, and Fig. 4 shows the relationship between the mixing ratio of CF4 and O3 and the etching rate. , Figure 6 shows the relationship between the mixed gas pressure of CF4 and 0° and the etching rate, Figure 6 shows the relationship between the positive photoresist post-bake temperature and the polyimide organic resin taper angle, and Figure 7 shows the etching of this example. It is a figure showing the progress state of. l: Substrate, 2: Polyimide organic resin, 3': Positive photoresist, θ,: Taper angle of positive photoresist, O
8! Taper angle of taper-etched polyimide organic resin. Fig. 1 Fig. 2 Fig. 3 Fig. Cow Fig. Trophoresist Bost Bake Salt ff (“C) No. 7
Figure 3' 1 (a)
Claims (1)
して、基板上のポリイミド系有機樹脂を反応性ガスを用
いて乾式エツチングする際に、前記反応性ガスはＣＦ、
と０．の混合ガスとし、前記ホトレジスｔのボスト
ベーク温度、前記混合ガスの混合比および圧力を制御す
ることを特徴とするＯｆｉ樹脂膜のテーパーエツチング
方法。α) When dry etching the polyimide organic resin on the substrate using a reactive gas using the post-baked photoresist as a mask pattern, the reactive gas is CF,
and 0. A method for taper etching an Ofi resin film, characterized in that the post-baking temperature of the photoresist t, the mixing ratio and pressure of the mixed gas are controlled.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3891083A JPS59165423A (en) | 1983-03-11 | 1983-03-11 | Tapered etching of organic resin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3891083A JPS59165423A (en) | 1983-03-11 | 1983-03-11 | Tapered etching of organic resin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59165423A true JPS59165423A (en) | 1984-09-18 |
Family
ID=12538351
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3891083A Pending JPS59165423A (en) | 1983-03-11 | 1983-03-11 | Tapered etching of organic resin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59165423A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01248607A (en) * | 1988-03-30 | 1989-10-04 | Matsushita Electric Ind Co Ltd | Film capacitor and method and apparatus for manufacturing the same |
| JPH02134805A (en) * | 1988-11-16 | 1990-05-23 | Matsushita Electric Ind Co Ltd | Film capacitor and manufacture of the same |
| JPH0334511A (en) * | 1989-06-30 | 1991-02-14 | Matsushita Electric Ind Co Ltd | Manufacture of film capacitor |
| JPH0334518A (en) * | 1989-06-30 | 1991-02-14 | Matsushita Electric Ind Co Ltd | Film capacitor and manufacture thereof |
| JPH0362911A (en) * | 1989-07-31 | 1991-03-19 | Matsushita Electric Ind Co Ltd | Metallized film capacitor and manufacture thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51117136A (en) * | 1975-04-09 | 1976-10-15 | Tokyo Shibaura Electric Co | Plasma etching process |
| JPS5785828A (en) * | 1980-11-18 | 1982-05-28 | Sumitomo Electric Ind Ltd | Etching of polyimide resin |
-
1983
- 1983-03-11 JP JP3891083A patent/JPS59165423A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51117136A (en) * | 1975-04-09 | 1976-10-15 | Tokyo Shibaura Electric Co | Plasma etching process |
| JPS5785828A (en) * | 1980-11-18 | 1982-05-28 | Sumitomo Electric Ind Ltd | Etching of polyimide resin |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01248607A (en) * | 1988-03-30 | 1989-10-04 | Matsushita Electric Ind Co Ltd | Film capacitor and method and apparatus for manufacturing the same |
| JPH02134805A (en) * | 1988-11-16 | 1990-05-23 | Matsushita Electric Ind Co Ltd | Film capacitor and manufacture of the same |
| JPH0334511A (en) * | 1989-06-30 | 1991-02-14 | Matsushita Electric Ind Co Ltd | Manufacture of film capacitor |
| JPH0334518A (en) * | 1989-06-30 | 1991-02-14 | Matsushita Electric Ind Co Ltd | Film capacitor and manufacture thereof |
| JPH0362911A (en) * | 1989-07-31 | 1991-03-19 | Matsushita Electric Ind Co Ltd | Metallized film capacitor and manufacture thereof |
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