JPS58141391A - Manufacture of shadow mask - Google Patents

Abstract

PURPOSE:To obtain a shadow mask having a highly accurate, small-diameter hole for passing electron beam, by providing a heat treatment stage executed at higher heat treatment temperature than that of postbake stage in the course of an etching stage. CONSTITUTION:A resist liquid is coated on both sides of a platelike shadow mask member 11, and resist patterning is performed through a prebake stage, exposing stage, developing stage and postbake stage. A specified hole 13 for passing electron beam is pierced on the shadow mask member 11 in the etching stage. In the etching process, etching is stopped once when 1/3-1/2 of the thickness of the shadow mask member 11 is etched. After performing heat treatment at postbake temperature or above, for instance, 250 deg.C, for about one minute, etching is resumed, and the hole 13 for passing electron beam is pierced.

Description

[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to a method for manufacturing a shadow mask, and relates to a method for forming two electron beam passage holes in a special plate-shaped shadow mask member. .

[Technical background of the invention and electric point between them]

A shadow mask for a color picture tube is usually a single piece of metal with five electron and -5 passage holes drilled in a predetermined arrangement, and this electron beam passage hole has poles on both sides of the pot. benevolent.

This electron beam passage hole is formed by -Ili+:4A eclipse JQi technique 6; Next 4: %1 figure to 5th
6: An outline of the process will be explained below.

First, as shown in 1-, a certain thickness, for example, 0.15w1
A flat plate-shaped shadow mask S material (1) having a thickness of ~0.18 mm is prepared, and this shadow mask member (1)
Light-curable to a predetermined thickness inward! kjl& (Lenst and thick in the following book) [(21) Apply. Next, a pre-baking process was performed to dry this lens) [(2M), and then a small diameter negative was applied to one side of Shimakores) II (2) as shown. A negative original plate having a diameter 1 and a negative original plate having a large diameter negative image on the other side are placed in close contact with each other, and each negative image is printed in a register using ultraviolet light or the like. Next, the uncured resist jl11 of the uncut light part of the resist group
1v development stage i [(: 1l1
As shown in 3k, the exposure of the shadow mask S material (1) where the electron beam passage hole Hhv is drilled is (la) (lb)
will be established. Next-2 remaining hardened resist) jl (2a)
(2b) To improve the water resistance and adhesion to the shadow mask member and prevent peeling due to etching 4: Torionjima 1 & Processing process (hereinafter referred to as post-bake process)
and resist patterning.

Next, an electron beam passage hole (3J) is drilled in which the etching solution S is not applied using the etching solution in the order shown in Fig. 44 (bl). The common method is to immerse the resist in a solution and rinse it off.Finally, the C double-cured resist group (2m) (2b) is removed, and the shadow mask member (1) is filled with electron beam passage holes ( 3) Shadow mask with perforations (actually 62 is a flat mask)
((1) occurs) (-In the etching process described above, the shape of the electron beam passage hole (3) and the shape of the electron beam passage hole (3) are shown in FIG. 4.).

Uzi Etsudenchu cil! Resist ml (2a
) (Over-etching H4k (5a) (5b) is formed between 2 and the shadow mask member (11), and the electron and Resist oxidized as a king '114
(2a) (zb) and the shadow mask member... Etching liquid resistance properties of the resist family (2m) (2m+) These properties are due to water resistance (1) These properties are similar to saponified resists) & ( 2a) (2k)) T-It depends on the characteristics of the resist formed, but it also changes depending on the conditions of the post-bake process, and the hole diameter and shape of the screw beam passage hole (31 is formed) varies. easy to do (, special ζ
Knee thousand beam passage hole (3) Small l of pip dimension of cabinet
There was an extremely difficult problem in the Jllt construction of the shadow mask, which has small-diameter electrons and passage holes.

[Purpose of the invention]

The present invention has been made in view of the above-mentioned conventional problems,
It is the object of the present invention to provide a different method for forming a shadow mask having an extremely good electron beam passage hole in the shape and edge of the cliff. In the present invention, resist buttering is performed on both sides of a plate-shaped 7-yado mask part H through a bridging process, an exposure machine, a developing process, and a post-baking process, and a predetermined pattern is applied to the shadow mask member using an etching process @62. In the shadow mask straight-through method 62 in which the electron beam passage hole Ilv is formed, during the etching process, the heat II & island l&
O is a method of passing through a shadow mask, which is characterized by the provision of a phoenix. Q to 1st
2- will be explained.

First ss factor g: constant thickness as shown, for example 0.15w
Prepare a flat plate-shaped shadow mask part IF6 with a thickness of −0.18 m, and add 1 itc of this shadow mask ilK material + a constant thickness resist) II (12*) to m
have

Next &: this register) II (approximately 1 to dry the 12θ
Pre-bake for 1 minute at 00°C for 11vj1711
0, as shown in (NiRegis) IilO, one side of this resist film part (: a negative original plate with a small diameter negative image t-, and the other side a negative original plate with a large diameter image space V!Is). and print the resist)*1 onto each negative gII' using ultraviolet light or the like. Next, the uncured resist in the unexposed part of the resist group is dissolved and removed using hot water using hot water. Exposure of I @(l1m)(llb)t' is provided.

Next, the remaining hardened resist group (12a) (12b)
Adhesion to the water resistant feces shadow mask S material v #1 and etching 1 & approx. 22 to prevent peeling due to etching.
A post bake process is performed at 0° C. for 1 minute to perform resist buttering. Next, spray etching with a ferric chloride solution in the same manner as shown in Figure 9. Etsut while being etched
y7v canceled.

In this case (as shown in BL 9, there is overetching 11 (16a) (1st+) between the hardened resist group (12a) (12b) and the shadow mask S material base υ.
was formed and therefore hardened regime) II (12&)
(121)) has an overhang part (16a).
(16b) is formed.

Next C: After cleaning the shadow mask member aυl in this state, the temperature is higher than the post-bake temperature of 111 cycles, for example 250
° # Performing 1 minute of Todoro Onshima treatment (; more ml
(As shown in IQ, overhang part (16m) (t
ab) is formed into a straight island shape so that the over-etched part (lsm) (is'b) shown in # in Etsuden is eliminated, and can be used as a protective layer in the next etching step.

Next 4: Etching @& is resumed, and an electron beam passing hole 11 (L3) as shown in FIG. 11 is drilled.

Resist agriculture hardened after moth (12a) (121))%
Overhang @ (16 turtle) (16b) t' line removal 1st
2-12 shadows to show Naruji! The shaft Puff (1) in which the electron beam passing hole 5 (13) is drilled
41 or completed.

〔Effect of the invention〕

As described above, according to the method for developing a shadow mask according to the present invention, the shadow mask member is made by drilling an electronic beam escape hole sv! 142 It becomes possible to suppress the fluctuation in hole shape and hole diameter as much as possible, which makes it possible to outperform shadow masks with high precision and small diameter electron beam passage holes, and its industrial enjoyment. It is extremely large.

4. Figures 914x to s5 are diagrams that clearly show the conventional method of manufacturing a 7YF mask, and figure s1 shows the process of applying resist liquid to both sides of the shadow mask member. Explanatory W showing the state m
#Self-drawing) Figure 2 shows the resist line formed by the t-prebaking machine (11) for explanatory purposes.
- indicates the state of the layer after the exposure and development process.
! J (al lbl lcl is an etching preview in the etching process t' * g: An illustration for the sake of light, and the 5th WA is an explanatory cutout showing the completed shadow mask.
1s6 Ugly to 12th diagram is a water T diagram showing an example of the manufacturing method of the 7YF mask of the present invention, and s6 diagram is an explanatory 1ffFka showing a state in which the shadow mask 1iIt material is coated with a resist solution vmet. ! 2. Figure 7 is an explanatory ``l1r-'' diagram showing the state of the resist liquid formed into a resist line in the pre-paking process, and Figure 8 is an explanatory self-diagram 1 showing the state of exposure, current government work, and Ii. Figure 11 is an explanatory section showing the state of the overhang part after the treatment of Hiroshima. The illustrative Wt-1 12- shown in the figure 11 in which the electron beam passage hole was formed by the etching process is the illustrative hole shown in the finished shard mask.

1%1l-J-Shadow mask component type benefactor Benkoushi Inoue-Male #I 1 Figure 2
Solid solution 3 Figure 4
Figure 6 Figure 7 Figure 10 Figure 1 Figure 12, j/4 ill

Claims (1)

[Claims] Apply resist liquid in both directions of the plate-shaped shadow mask II material]1
! In 11 different methods of forming a shadow mask, the shadow mask member is fabricated, a pre-bake process, a path light process, a development process, a post-bake process of 8 times are performed, resist patterning is performed, and a predetermined electron beam passing hole 11V is formed in the shadow mask member by an etching process. . A method for manufacturing a shadow mask, characterized in that a thermal process at a temperature higher than the thermal temperature of the post-baking process is provided in the middle of the etching process.