JPS59162695A - Storage device - Google Patents

Storage device

Info

Publication number
JPS59162695A
JPS59162695A JP3696483A JP3696483A JPS59162695A JP S59162695 A JPS59162695 A JP S59162695A JP 3696483 A JP3696483 A JP 3696483A JP 3696483 A JP3696483 A JP 3696483A JP S59162695 A JPS59162695 A JP S59162695A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
memory
writing
frequency
processor
storage device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3696483A
Inventor
Sadanobu Ikeda
Toshio Ninomiya
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards

Abstract

PURPOSE:To secure the reliability of storage contents easily by controlling the frequency of writing to a nonvolatile memory. CONSTITUTION:A microprocessor is connected to a nonvolatile and electrically erasable programmable ROM (EEPROM)2 and an RAM3. The processor 1 writes the frequency of writing up to now in a specific address (03FF) of the memory 2 prior to writing to the memory 2. The processor 1 reads the frequency COUNT of writing by a write enable signal WE to the memory 2 before writing data in the memory 2; when the frequency does not exceed a secured frequency N of writing, the value COUNT is increased by one to perform the writing to the memory 2, and when so, data to be written in the memory 2 is saved on an external storage device such as a floppy disk to let an operator know that the memory 2 should be replaced.
JP3696483A 1983-03-07 1983-03-07 Storage device Pending JPS59162695A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3696483A JPS59162695A (en) 1983-03-07 1983-03-07 Storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3696483A JPS59162695A (en) 1983-03-07 1983-03-07 Storage device

Publications (1)

Publication Number Publication Date
JPS59162695A true true JPS59162695A (en) 1984-09-13

Family

ID=12484411

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3696483A Pending JPS59162695A (en) 1983-03-07 1983-03-07 Storage device

Country Status (1)

Country Link
JP (1) JPS59162695A (en)

Cited By (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62145600A (en) * 1985-12-20 1987-06-29 Fujitsu Ltd Memory device
US5268870A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Flash EEPROM system and intelligent programming and erasing methods therefor
EP0667620A2 (en) * 1994-02-15 1995-08-16 Matsushita Electric Industrial Co., Ltd. Semiconductor memory device
EP0685852A3 (en) * 1988-06-08 1996-02-14 Eliyahou Harari Memory system and method of using same.
US5530827A (en) * 1991-11-28 1996-06-25 Fujitsu Limited Data management system for programming-limited type semiconductor memory and IC memory card employing data save/erase process with flag assignment
US5544119A (en) * 1992-10-30 1996-08-06 Intel Corporation Method for assuring that an erase process for a memory array has been properly completed
US5544356A (en) * 1990-12-31 1996-08-06 Intel Corporation Block-erasable non-volatile semiconductor memory which tracks and stores the total number of write/erase cycles for each block
US5602987A (en) * 1989-04-13 1997-02-11 Sandisk Corporation Flash EEprom system
US5630093A (en) * 1990-12-31 1997-05-13 Intel Corporation Disk emulation for a non-volatile semiconductor memory utilizing a mapping table
US5765175A (en) * 1994-08-26 1998-06-09 Intel Corporation System and method for removing deleted entries in file systems based on write-once or erase-slowly media
US5809556A (en) * 1992-05-15 1998-09-15 Toshiba Corporation Data storage system for highly frequent repetitive data writing
US5838614A (en) * 1995-07-31 1998-11-17 Lexar Microsystems, Inc. Identification and verification of a sector within a block of mass storage flash memory
US5907856A (en) * 1995-07-31 1999-05-25 Lexar Media, Inc. Moving sectors within a block of information in a flash memory mass storage architecture
US5928370A (en) * 1997-02-05 1999-07-27 Lexar Media, Inc. Method and apparatus for verifying erasure of memory blocks within a non-volatile memory structure
US5930815A (en) * 1995-07-31 1999-07-27 Lexar Media, Inc. Moving sequential sectors within a block of information in a flash memory mass storage architecture
US5963480A (en) * 1988-06-08 1999-10-05 Harari; Eliyahou Highly compact EPROM and flash EEPROM devices
US6034897A (en) * 1999-04-01 2000-03-07 Lexar Media, Inc. Space management for managing high capacity nonvolatile memory
US6076137A (en) * 1997-12-11 2000-06-13 Lexar Media, Inc. Method and apparatus for storing location identification information within non-volatile memory devices
US6081878A (en) * 1997-03-31 2000-06-27 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US6081447A (en) * 1991-09-13 2000-06-27 Western Digital Corporation Wear leveling techniques for flash EEPROM systems
US6115785A (en) * 1995-07-31 2000-09-05 Lexar Media, Inc. Direct logical block addressing flash memory mass storage architecture
US6122195A (en) * 1997-03-31 2000-09-19 Lexar Media, Inc. Method and apparatus for decreasing block write operation times performed on nonvolatile memory
US6141249A (en) * 1999-04-01 2000-10-31 Lexar Media, Inc. Organization of blocks within a nonvolatile memory unit to effectively decrease sector write operation time
US6262918B1 (en) 1999-04-01 2001-07-17 Lexar Media, Inc. Space management for managing high capacity nonvolatile memory
EP1168815A2 (en) * 1994-02-23 2002-01-02 Canon Kabushiki Kaisha Data processing apparatus using recording medium which needs data erasing processing before recording of data
US6374337B1 (en) 1998-11-17 2002-04-16 Lexar Media, Inc. Data pipelining method and apparatus for memory control circuit
US6411546B1 (en) 1997-03-31 2002-06-25 Lexar Media, Inc. Nonvolatile memory using flexible erasing methods and method and system for using same
US6462992B2 (en) 1989-04-13 2002-10-08 Sandisk Corporation Flash EEprom system
US6567307B1 (en) 2000-07-21 2003-05-20 Lexar Media, Inc. Block management for mass storage
US6728851B1 (en) 1995-07-31 2004-04-27 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US6750908B1 (en) 1994-02-03 2004-06-15 Canon Kabushiki Kaisha Image processing apparatus using recording medium which needs data erasing processing before recording of data
US6757800B1 (en) 1995-07-31 2004-06-29 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US6801979B1 (en) 1995-07-31 2004-10-05 Lexar Media, Inc. Method and apparatus for memory control circuit
US6813678B1 (en) 1998-01-22 2004-11-02 Lexar Media, Inc. Flash memory system
US6898662B2 (en) 2001-09-28 2005-05-24 Lexar Media, Inc. Memory system sectors
JP2006085868A (en) * 2004-09-17 2006-03-30 Fujitsu Ltd Rewrite limiting method and semiconductor device
US7120729B2 (en) 2002-10-28 2006-10-10 Sandisk Corporation Automated wear leveling in non-volatile storage systems
US7492660B2 (en) 1989-04-13 2009-02-17 Sandisk Corporation Flash EEprom system
US8040727B1 (en) 1989-04-13 2011-10-18 Sandisk Corporation Flash EEprom system with overhead data stored in user data sectors
US8694722B2 (en) 2001-09-28 2014-04-08 Micron Technology, Inc. Memory systems
US9032134B2 (en) 2001-09-28 2015-05-12 Micron Technology, Inc. Methods of operating a memory system that include outputting a data pattern from a sector allocation table to a host if a logical sector is indicated as being erased
US9213606B2 (en) 2002-02-22 2015-12-15 Micron Technology, Inc. Image rescue
US9576154B2 (en) 2004-04-30 2017-02-21 Micron Technology, Inc. Methods of operating storage systems including using a key to determine whether a password can be changed

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57135498A (en) * 1981-02-16 1982-08-21 Nec Corp Semiconductor memory

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57135498A (en) * 1981-02-16 1982-08-21 Nec Corp Semiconductor memory

Cited By (76)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62145600A (en) * 1985-12-20 1987-06-29 Fujitsu Ltd Memory device
US5862081A (en) * 1988-06-08 1999-01-19 Harari; Eliyahou Multi-state flash EEPROM system with defect management including an error correction scheme
US5268870A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Flash EEPROM system and intelligent programming and erasing methods therefor
US5434825A (en) * 1988-06-08 1995-07-18 Harari; Eliyahou Flash EEPROM system cell array with more than two storage states per memory cell
US5642312A (en) * 1988-06-08 1997-06-24 Harari; Eliyahou Flash EEPROM system cell array with more than two storage states per memory cell
EP0685852A3 (en) * 1988-06-08 1996-02-14 Eliyahou Harari Memory system and method of using same.
US5909390A (en) * 1988-06-08 1999-06-01 Harari; Eliyahou Techniques of programming and erasing an array of multi-state flash EEPROM cells including comparing the states of the cells to desired values
US5544118A (en) * 1988-06-08 1996-08-06 Harari; Eliyahou Flash EEPROM system cell array with defect management including an error correction scheme
US5963480A (en) * 1988-06-08 1999-10-05 Harari; Eliyahou Highly compact EPROM and flash EEPROM devices
US5712819A (en) * 1988-06-08 1998-01-27 Harari; Eliyahou Flash EEPROM system with storage of sector characteristic information within the sector
US5568439A (en) * 1988-06-08 1996-10-22 Harari; Eliyahou Flash EEPROM system which maintains individual memory block cycle counts
US5583812A (en) * 1988-06-08 1996-12-10 Harari; Eliyahou Flash EEPROM system cell array with more than two storage states per memory cell
US5835415A (en) * 1988-06-08 1998-11-10 Harari; Eliyahou Flash EEPROM memory systems and methods of using them
US5602987A (en) * 1989-04-13 1997-02-11 Sandisk Corporation Flash EEprom system
US8040727B1 (en) 1989-04-13 2011-10-18 Sandisk Corporation Flash EEprom system with overhead data stored in user data sectors
US5999446A (en) * 1989-04-13 1999-12-07 Sandisk Corporation Multi-state flash EEprom system with selective multi-sector erase
US6462992B2 (en) 1989-04-13 2002-10-08 Sandisk Corporation Flash EEprom system
US5719808A (en) * 1989-04-13 1998-02-17 Sandisk Corporation Flash EEPROM system
US7460399B1 (en) 1989-04-13 2008-12-02 Sandisk Corporation Flash EEprom system
US7492660B2 (en) 1989-04-13 2009-02-17 Sandisk Corporation Flash EEprom system
US5936971A (en) * 1989-04-13 1999-08-10 Sandisk Corporation Multi-state flash EEprom system with cache memory
US5630093A (en) * 1990-12-31 1997-05-13 Intel Corporation Disk emulation for a non-volatile semiconductor memory utilizing a mapping table
US5592669A (en) * 1990-12-31 1997-01-07 Intel Corporation File structure for a non-volatile block-erasable semiconductor flash memory
US5544356A (en) * 1990-12-31 1996-08-06 Intel Corporation Block-erasable non-volatile semiconductor memory which tracks and stores the total number of write/erase cycles for each block
US7353325B2 (en) 1991-09-13 2008-04-01 Sandisk Corporation Wear leveling techniques for flash EEPROM systems
US6230233B1 (en) 1991-09-13 2001-05-08 Sandisk Corporation Wear leveling techniques for flash EEPROM systems
US6594183B1 (en) 1991-09-13 2003-07-15 Sandisk Corporation Wear leveling techniques for flash EEPROM systems
US6081447A (en) * 1991-09-13 2000-06-27 Western Digital Corporation Wear leveling techniques for flash EEPROM systems
US6850443B2 (en) 1991-09-13 2005-02-01 Sandisk Corporation Wear leveling techniques for flash EEPROM systems
US5530827A (en) * 1991-11-28 1996-06-25 Fujitsu Limited Data management system for programming-limited type semiconductor memory and IC memory card employing data save/erase process with flag assignment
US5809556A (en) * 1992-05-15 1998-09-15 Toshiba Corporation Data storage system for highly frequent repetitive data writing
US5544119A (en) * 1992-10-30 1996-08-06 Intel Corporation Method for assuring that an erase process for a memory array has been properly completed
US6750908B1 (en) 1994-02-03 2004-06-15 Canon Kabushiki Kaisha Image processing apparatus using recording medium which needs data erasing processing before recording of data
EP0667620A3 (en) * 1994-02-15 1996-02-07 Matsushita Electric Ind Co Ltd Semiconductor memory device.
EP0667620A2 (en) * 1994-02-15 1995-08-16 Matsushita Electric Industrial Co., Ltd. Semiconductor memory device
EP1168815A2 (en) * 1994-02-23 2002-01-02 Canon Kabushiki Kaisha Data processing apparatus using recording medium which needs data erasing processing before recording of data
EP1761032A1 (en) * 1994-02-23 2007-03-07 Canon Kabushiki Kaisha Recording unit with detection of durability of recording medium
EP1168815A3 (en) * 1994-02-23 2002-11-06 Canon Kabushiki Kaisha Data processing apparatus using recording medium which needs data erasing processing before recording of data
US5765175A (en) * 1994-08-26 1998-06-09 Intel Corporation System and method for removing deleted entries in file systems based on write-once or erase-slowly media
US6172906B1 (en) 1995-07-31 2001-01-09 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US6145051A (en) * 1995-07-31 2000-11-07 Lexar Media, Inc. Moving sectors within a block of information in a flash memory mass storage architecture
US6223308B1 (en) 1995-07-31 2001-04-24 Lexar Media, Inc. Identification and verification of a sector within a block of mass STO rage flash memory
US6128695A (en) * 1995-07-31 2000-10-03 Lexar Media, Inc. Identification and verification of a sector within a block of mass storage flash memory
US6912618B2 (en) 1995-07-31 2005-06-28 Lexar Media, Inc. Direct logical block addressing flash memory mass storage architecture
US6115785A (en) * 1995-07-31 2000-09-05 Lexar Media, Inc. Direct logical block addressing flash memory mass storage architecture
US5838614A (en) * 1995-07-31 1998-11-17 Lexar Microsystems, Inc. Identification and verification of a sector within a block of mass storage flash memory
US6757800B1 (en) 1995-07-31 2004-06-29 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US9026721B2 (en) 1995-07-31 2015-05-05 Micron Technology, Inc. Managing defective areas of memory
US6728851B1 (en) 1995-07-31 2004-04-27 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US5907856A (en) * 1995-07-31 1999-05-25 Lexar Media, Inc. Moving sectors within a block of information in a flash memory mass storage architecture
US5930815A (en) * 1995-07-31 1999-07-27 Lexar Media, Inc. Moving sequential sectors within a block of information in a flash memory mass storage architecture
US6393513B2 (en) 1995-07-31 2002-05-21 Lexar Media, Inc. Identification and verification of a sector within a block of mass storage flash memory
US6801979B1 (en) 1995-07-31 2004-10-05 Lexar Media, Inc. Method and apparatus for memory control circuit
US5928370A (en) * 1997-02-05 1999-07-27 Lexar Media, Inc. Method and apparatus for verifying erasure of memory blocks within a non-volatile memory structure
US6411546B1 (en) 1997-03-31 2002-06-25 Lexar Media, Inc. Nonvolatile memory using flexible erasing methods and method and system for using same
US6081878A (en) * 1997-03-31 2000-06-27 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US6122195A (en) * 1997-03-31 2000-09-19 Lexar Media, Inc. Method and apparatus for decreasing block write operation times performed on nonvolatile memory
US6587382B1 (en) 1997-03-31 2003-07-01 Lexar Media, Inc. Nonvolatile memory using flexible erasing methods and method and system for using same
US6076137A (en) * 1997-12-11 2000-06-13 Lexar Media, Inc. Method and apparatus for storing location identification information within non-volatile memory devices
US6327639B1 (en) 1997-12-11 2001-12-04 Lexar Media, Inc. Method and apparatus for storing location identification information within non-volatile memory devices
US6813678B1 (en) 1998-01-22 2004-11-02 Lexar Media, Inc. Flash memory system
US6374337B1 (en) 1998-11-17 2002-04-16 Lexar Media, Inc. Data pipelining method and apparatus for memory control circuit
US6034897A (en) * 1999-04-01 2000-03-07 Lexar Media, Inc. Space management for managing high capacity nonvolatile memory
US6141249A (en) * 1999-04-01 2000-10-31 Lexar Media, Inc. Organization of blocks within a nonvolatile memory unit to effectively decrease sector write operation time
US6262918B1 (en) 1999-04-01 2001-07-17 Lexar Media, Inc. Space management for managing high capacity nonvolatile memory
US6134151A (en) * 1999-04-01 2000-10-17 Lexar Media, Inc. Space management for managing high capacity nonvolatile memory
US6567307B1 (en) 2000-07-21 2003-05-20 Lexar Media, Inc. Block management for mass storage
US9032134B2 (en) 2001-09-28 2015-05-12 Micron Technology, Inc. Methods of operating a memory system that include outputting a data pattern from a sector allocation table to a host if a logical sector is indicated as being erased
US6898662B2 (en) 2001-09-28 2005-05-24 Lexar Media, Inc. Memory system sectors
US9489301B2 (en) 2001-09-28 2016-11-08 Micron Technology, Inc. Memory systems
US8694722B2 (en) 2001-09-28 2014-04-08 Micron Technology, Inc. Memory systems
US9213606B2 (en) 2002-02-22 2015-12-15 Micron Technology, Inc. Image rescue
US7120729B2 (en) 2002-10-28 2006-10-10 Sandisk Corporation Automated wear leveling in non-volatile storage systems
US9576154B2 (en) 2004-04-30 2017-02-21 Micron Technology, Inc. Methods of operating storage systems including using a key to determine whether a password can be changed
US10049207B2 (en) 2004-04-30 2018-08-14 Micron Technology, Inc. Methods of operating storage systems including encrypting a key salt
JP2006085868A (en) * 2004-09-17 2006-03-30 Fujitsu Ltd Rewrite limiting method and semiconductor device

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