JPS59162267A - 蒸着装置及び蒸着方法 - Google Patents
蒸着装置及び蒸着方法Info
- Publication number
- JPS59162267A JPS59162267A JP3453883A JP3453883A JPS59162267A JP S59162267 A JPS59162267 A JP S59162267A JP 3453883 A JP3453883 A JP 3453883A JP 3453883 A JP3453883 A JP 3453883A JP S59162267 A JPS59162267 A JP S59162267A
- Authority
- JP
- Japan
- Prior art keywords
- reaction product
- vapor deposition
- light
- nozzle
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/483—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using coherent light, UV to IR, e.g. lasers
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Toxicology (AREA)
- Optics & Photonics (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3453883A JPS59162267A (ja) | 1983-03-04 | 1983-03-04 | 蒸着装置及び蒸着方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3453883A JPS59162267A (ja) | 1983-03-04 | 1983-03-04 | 蒸着装置及び蒸着方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59162267A true JPS59162267A (ja) | 1984-09-13 |
JPH0480116B2 JPH0480116B2 (enrdf_load_stackoverflow) | 1992-12-17 |
Family
ID=12417060
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3453883A Granted JPS59162267A (ja) | 1983-03-04 | 1983-03-04 | 蒸着装置及び蒸着方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59162267A (enrdf_load_stackoverflow) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6193830A (ja) * | 1984-10-15 | 1986-05-12 | Nec Corp | 光気相成長法 |
US5164040A (en) * | 1989-08-21 | 1992-11-17 | Martin Marietta Energy Systems, Inc. | Method and apparatus for rapidly growing films on substrates using pulsed supersonic jets |
JPH06283534A (ja) * | 1993-03-26 | 1994-10-07 | Hitachi Ltd | Ic素子における配線接続装置 |
JPH06283535A (ja) * | 1993-03-26 | 1994-10-07 | Hitachi Ltd | Ic素子に対する絶縁膜形成方法 |
JPH06295910A (ja) * | 1993-03-26 | 1994-10-21 | Hitachi Ltd | Ic素子およびic素子における配線接続方法 |
JPH06302603A (ja) * | 1993-03-26 | 1994-10-28 | Hitachi Ltd | Ic素子 |
JP2007049128A (ja) * | 2005-07-12 | 2007-02-22 | Seiko Epson Corp | 製膜装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5961920A (ja) * | 1982-10-01 | 1984-04-09 | Agency Of Ind Science & Technol | 薄膜製造方法およびその装置 |
-
1983
- 1983-03-04 JP JP3453883A patent/JPS59162267A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5961920A (ja) * | 1982-10-01 | 1984-04-09 | Agency Of Ind Science & Technol | 薄膜製造方法およびその装置 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6193830A (ja) * | 1984-10-15 | 1986-05-12 | Nec Corp | 光気相成長法 |
US5164040A (en) * | 1989-08-21 | 1992-11-17 | Martin Marietta Energy Systems, Inc. | Method and apparatus for rapidly growing films on substrates using pulsed supersonic jets |
JPH06283534A (ja) * | 1993-03-26 | 1994-10-07 | Hitachi Ltd | Ic素子における配線接続装置 |
JPH06283535A (ja) * | 1993-03-26 | 1994-10-07 | Hitachi Ltd | Ic素子に対する絶縁膜形成方法 |
JPH06295910A (ja) * | 1993-03-26 | 1994-10-21 | Hitachi Ltd | Ic素子およびic素子における配線接続方法 |
JPH06302603A (ja) * | 1993-03-26 | 1994-10-28 | Hitachi Ltd | Ic素子 |
JP2007049128A (ja) * | 2005-07-12 | 2007-02-22 | Seiko Epson Corp | 製膜装置 |
Also Published As
Publication number | Publication date |
---|---|
JPH0480116B2 (enrdf_load_stackoverflow) | 1992-12-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2589033B2 (ja) | レーザ補助による化学蒸着法 | |
US4886681A (en) | Metal-polymer adhesion by low energy bombardment | |
Mattox | Physical vapor deposition (PVD) processes | |
JPS6345579B2 (enrdf_load_stackoverflow) | ||
JP2597352B2 (ja) | 金属−有機基板間の接着力を改善する方法 | |
JPS599164A (ja) | 耐火金属層を基板上に光沈着させる方法 | |
US5849371A (en) | Laser and laser-assisted free electron beam deposition apparatus and method | |
JPS59162267A (ja) | 蒸着装置及び蒸着方法 | |
JP4155031B2 (ja) | 基材の表面改質方法及び改質された基材、並びに装置 | |
JPH0419701B2 (enrdf_load_stackoverflow) | ||
US5089289A (en) | Method of forming thin films | |
JPH01104776A (ja) | レーザ光による所定の微細構造の析出方法 | |
JPS5822376A (ja) | 反応蒸着によつて不均質光学的薄膜を形成する方法 | |
US3373050A (en) | Deflecting particles in vacuum coating process | |
JPH03174306A (ja) | 酸化物超電導体の製造方法 | |
Viereck et al. | Laser-induced desorption of Na-dimers | |
JPS5852473A (ja) | 金属材料の表面処理法 | |
JPH06228743A (ja) | 真空蒸着装置 | |
RU2017191C1 (ru) | Способ формирования маскирующего слоя фотошаблона | |
JPS60182128A (ja) | 薄膜形成装置 | |
US4839196A (en) | Photochemical film-forming method | |
JPS6242417A (ja) | 薄膜形成方法 | |
JPS60178622A (ja) | 半導体装置の製造方法 | |
KR20050109766A (ko) | 곡면화된 타겟을 갖는 박막 증착 장치 | |
CA1292965C (en) | Metal adhesion by low energy irradiation of an organic substrate |