JPS59158127A - ゲ−トタ−ンオフサイリスタのゲ−ト駆動回路 - Google Patents
ゲ−トタ−ンオフサイリスタのゲ−ト駆動回路Info
- Publication number
- JPS59158127A JPS59158127A JP58030769A JP3076983A JPS59158127A JP S59158127 A JPS59158127 A JP S59158127A JP 58030769 A JP58030769 A JP 58030769A JP 3076983 A JP3076983 A JP 3076983A JP S59158127 A JPS59158127 A JP S59158127A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- thyristor
- current
- wide
- turns
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004804 winding Methods 0.000 claims description 8
- 230000002265 prevention Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 7
- 238000002955 isolation Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
- H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for DC voltages or currents
- H03K17/732—Measures for enabling turn-off
Landscapes
- Protection Of Static Devices (AREA)
- Power Conversion In General (AREA)
- Thyristor Switches And Gates (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58030769A JPS59158127A (ja) | 1983-02-28 | 1983-02-28 | ゲ−トタ−ンオフサイリスタのゲ−ト駆動回路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58030769A JPS59158127A (ja) | 1983-02-28 | 1983-02-28 | ゲ−トタ−ンオフサイリスタのゲ−ト駆動回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59158127A true JPS59158127A (ja) | 1984-09-07 |
JPH0324817B2 JPH0324817B2 (enrdf_load_stackoverflow) | 1991-04-04 |
Family
ID=12312883
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58030769A Granted JPS59158127A (ja) | 1983-02-28 | 1983-02-28 | ゲ−トタ−ンオフサイリスタのゲ−ト駆動回路 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59158127A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018074619A (ja) * | 2016-10-24 | 2018-05-10 | ニチコン株式会社 | ゲートパルス発生回路およびパルス電源装置 |
-
1983
- 1983-02-28 JP JP58030769A patent/JPS59158127A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018074619A (ja) * | 2016-10-24 | 2018-05-10 | ニチコン株式会社 | ゲートパルス発生回路およびパルス電源装置 |
Also Published As
Publication number | Publication date |
---|---|
JPH0324817B2 (enrdf_load_stackoverflow) | 1991-04-04 |