JPS59156426A - プラズマ気相成長装置のプラズマ発生用電極 - Google Patents
プラズマ気相成長装置のプラズマ発生用電極Info
- Publication number
- JPS59156426A JPS59156426A JP2926383A JP2926383A JPS59156426A JP S59156426 A JPS59156426 A JP S59156426A JP 2926383 A JP2926383 A JP 2926383A JP 2926383 A JP2926383 A JP 2926383A JP S59156426 A JPS59156426 A JP S59156426A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- reaction tube
- plasma
- negative electrode
- tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006243 chemical reaction Methods 0.000 claims description 28
- 238000007740 vapor deposition Methods 0.000 claims 1
- 238000001947 vapour-phase growth Methods 0.000 claims 1
- 239000012495 reaction gas Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- ZFXYFBGIUFBOJW-UHFFFAOYSA-N theophylline Chemical compound O=C1N(C)C(=O)N(C)C2=C1NC=N2 ZFXYFBGIUFBOJW-UHFFFAOYSA-N 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Landscapes
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2926383A JPS59156426A (ja) | 1983-02-25 | 1983-02-25 | プラズマ気相成長装置のプラズマ発生用電極 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2926383A JPS59156426A (ja) | 1983-02-25 | 1983-02-25 | プラズマ気相成長装置のプラズマ発生用電極 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59156426A true JPS59156426A (ja) | 1984-09-05 |
| JPS6245307B2 JPS6245307B2 (enExample) | 1987-09-25 |
Family
ID=12271389
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2926383A Granted JPS59156426A (ja) | 1983-02-25 | 1983-02-25 | プラズマ気相成長装置のプラズマ発生用電極 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59156426A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12555752B2 (en) | 2022-03-23 | 2026-02-17 | Kokusai Electric Corporation | Substrate processing apparatus, electrode structure and method of manufacturing semiconductor device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01111109U (enExample) * | 1988-01-20 | 1989-07-26 |
-
1983
- 1983-02-25 JP JP2926383A patent/JPS59156426A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12555752B2 (en) | 2022-03-23 | 2026-02-17 | Kokusai Electric Corporation | Substrate processing apparatus, electrode structure and method of manufacturing semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6245307B2 (enExample) | 1987-09-25 |
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