JPS59151428A - 反応性イオンビ−ムエツチング装置 - Google Patents

反応性イオンビ−ムエツチング装置

Info

Publication number
JPS59151428A
JPS59151428A JP2473583A JP2473583A JPS59151428A JP S59151428 A JPS59151428 A JP S59151428A JP 2473583 A JP2473583 A JP 2473583A JP 2473583 A JP2473583 A JP 2473583A JP S59151428 A JPS59151428 A JP S59151428A
Authority
JP
Japan
Prior art keywords
ion
electrode
processing chamber
sample processing
ion beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2473583A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0310224B2 (enrdf_load_html_response
Inventor
Kiyoshi Asakawa
浅川　潔
Takao Uchiumi
孝雄 内海
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP2473583A priority Critical patent/JPS59151428A/ja
Publication of JPS59151428A publication Critical patent/JPS59151428A/ja
Publication of JPH0310224B2 publication Critical patent/JPH0310224B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP2473583A 1983-02-18 1983-02-18 反応性イオンビ−ムエツチング装置 Granted JPS59151428A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2473583A JPS59151428A (ja) 1983-02-18 1983-02-18 反応性イオンビ−ムエツチング装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2473583A JPS59151428A (ja) 1983-02-18 1983-02-18 反応性イオンビ−ムエツチング装置

Publications (2)

Publication Number Publication Date
JPS59151428A true JPS59151428A (ja) 1984-08-29
JPH0310224B2 JPH0310224B2 (enrdf_load_html_response) 1991-02-13

Family

ID=12146402

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2473583A Granted JPS59151428A (ja) 1983-02-18 1983-02-18 反応性イオンビ−ムエツチング装置

Country Status (1)

Country Link
JP (1) JPS59151428A (enrdf_load_html_response)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59184529A (ja) * 1983-04-04 1984-10-19 Mitsubishi Electric Corp 反応性イオンビ−ムエツチング装置
JPH01127668A (ja) * 1987-11-09 1989-05-19 Nec Corp 集束荷電ビーム装置
JP2007027097A (ja) * 2005-07-13 2007-02-01 Samsung Electronics Co Ltd プラズマを分離加速させる中性ビームエッチング装置
JP2007042609A (ja) * 2005-07-29 2007-02-15 Samsung Electronics Co Ltd プラズマ加速装置及び該装置を備えるプラズマ処理システム

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59184529A (ja) * 1983-04-04 1984-10-19 Mitsubishi Electric Corp 反応性イオンビ−ムエツチング装置
JPH01127668A (ja) * 1987-11-09 1989-05-19 Nec Corp 集束荷電ビーム装置
JP2007027097A (ja) * 2005-07-13 2007-02-01 Samsung Electronics Co Ltd プラズマを分離加速させる中性ビームエッチング装置
US7789992B2 (en) 2005-07-13 2010-09-07 Samsung Electronics Co., Ltd. Neutral beam etching device for separating and accelerating plasma
JP2007042609A (ja) * 2005-07-29 2007-02-15 Samsung Electronics Co Ltd プラズマ加速装置及び該装置を備えるプラズマ処理システム
US7609002B2 (en) 2005-07-29 2009-10-27 Samsung Electronics Co., Ltd. Plasma accelerating apparatus and plasma processing system having the same

Also Published As

Publication number Publication date
JPH0310224B2 (enrdf_load_html_response) 1991-02-13

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