JPS59150435A - Wire bonding method - Google Patents
Wire bonding methodInfo
- Publication number
- JPS59150435A JPS59150435A JP58020093A JP2009383A JPS59150435A JP S59150435 A JPS59150435 A JP S59150435A JP 58020093 A JP58020093 A JP 58020093A JP 2009383 A JP2009383 A JP 2009383A JP S59150435 A JPS59150435 A JP S59150435A
- Authority
- JP
- Japan
- Prior art keywords
- wire
- connection point
- bonding
- ball
- capillary
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4846—Connecting portions with multiple bonds on the same bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/786—Means for supplying the connector to be connected in the bonding apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/851—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector the connector being supplied to the parts to be connected in the bonding apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
との発明はたとえば半導体装置の組立工程において、Ｋ
レットとリードとを接続するワイヤボンディング方法に
関する。[Detailed Description of the Invention] [Technical Field of the Invention] The invention relates to the invention, for example, in the assembly process of semiconductor devices.
The present invention relates to a wire bonding method for connecting leads and leads.
半導体装置の組立工程においてほぼレット上の第１接続
点にワイヤ薔接続し、ついでリードフレーム上の第２接
続点に接続し、たのち１．ワイヤをクランプ装置でクラ
ンプした状態で引上げグルカットすることとしている。In the process of assembling a semiconductor device, a wire is connected to a first connection point approximately on the lead, and then connected to a second connection point on the lead frame, and then 1. The wire is clamped with a clamp device and then pulled up and cut.
そして破断したワイヤの先端をワイヤ加熱装置たとえば
ガストーチまたはスパーク電極によシ加熱してボールを
形成している。しかして、従来のワイヤ加熱装置は特開
昭５６−１１８６４９号公報゛のように、第２接続点の
接続が終了したのち、ワイヤを破断し、ワイヤを上昇さ
せ、破断したワイヤの下方にスパーク電極を移動させて
放電を行わせ、ワイヤの先端にボールを形成している。The tip of the broken wire is then heated by a wire heating device such as a gas torch or a spark electrode to form a ball. However, the conventional wire heating device, as disclosed in Japanese Unexamined Patent Publication No. 56-118649, breaks the wire after the connection at the second connection point is completed, raises the wire, and causes sparks below the broken wire. The electrodes are moved to create a discharge, forming a ball at the tip of the wire.
したがってスノ９−り電極を移動させるための時間と複
雑な機構が必要で信頼性が悪く高速化を困難にしていた
。さらに、振動、騒音の発生源となυ＋！？ンディング
の安定性、歩留を低下させる原因ともなっていた。また
従来装置においてワ・１ヤにスパークを飛ばすだめのト
ーチ棒を使用している場合は、トーチ棒のス・９−り点
附近に酸化物がたまシすぐ汚れるので定期的に洗浄しな
くてはならないという欠点を有していた。Therefore, it requires time and a complicated mechanism to move the snowboard electrode, resulting in poor reliability and difficulty in increasing the speed. Furthermore, it is a source of vibration and noise! ? This was also a cause of lowering the stability and yield of loading. In addition, if a conventional device uses a torch rod that is designed to send sparks to the wire, the area around the torch rod's 9-point point will accumulate oxides and get dirty easily, so it must be cleaned regularly. It had the disadvantage that it could not be used.
壕だ従来はワイヤとスパーク電極の間は０．２間程度の
ギヤラグをもうけておき、これに高圧（数１０００■）
をかけていた。このため高圧発生回路が複雑でまた高圧
であるため危険かつノイズが発生しやすいという欠点を
有していた。Conventionally, a gear lag of about 0.2 mm is provided between the wire and the spark electrode, and high voltage (several 1000 mm) is applied to this.
was running. For this reason, the high voltage generation circuit is complicated, and the high voltage is dangerous and tends to generate noise.
この発明は上記事情を考慮してなされたものでその目的
とするところは、ワイヤと第２接栓点の間に直接放電を
行わせることによシトーチやスノ４−り電極の移動をな
くし高速ボンディングを可能にするワイヤデンディング
方法を提供するものである。This invention was made in consideration of the above circumstances, and its purpose is to eliminate the movement of the torch and snow four-point electrode by causing a direct discharge between the wire and the second contact point, and to achieve high speed. The present invention provides a wire ending method that enables bonding.
この発明においては、定電流電源のマイナス側をリード
フレームに接続し、プラス側をワイヤに′接続する回路
を形成し、この回路にはスイッチを設けておき、ワイヤ
をリードフレーム上 ゛の第２接続点にデンディン
グしたのちキャピラリが上方に移動し、ワイヤをプルカ
ットするとき上記スイッチをオンに口、ワイヤが破断す
るとき放電エネルギーによシワイヤ先端を溶融し、ぎ−
ルを形成するようにしたものである。In this invention, a circuit is formed in which the negative side of a constant current power supply is connected to a lead frame, and the positive side is connected to a wire, a switch is provided in this circuit, and the wire is connected to the second terminal on the lead frame. After dending to the connection point, the capillary moves upward and pulls and cuts the wire.Turn on the above switch, and when the wire breaks, the discharging energy melts the tip of the sheared wire and cuts the wire.
It is designed to form a file.
以下、この発明の実施例を添付図面を参照して説明する
。第１図中１はボンディングヘッド本体で、この本体Ｉ
の上部にはワイヤスプール２が設けられている。上記本
体１のワ・イヤ繰出し側にはワイヤ３を案内するワイヤ
ガイド４が設けられている。また、ワイヤガイド４の自
由端部には上記ワイヤ３を下方へ案内するだめの湾曲部
８が形成されている。このワイヤガイド４の湾曲部８の
下部には導入されたワイヤ３をクランプしたり解放した
シする上クランプ９が設けられている。この上クランプ
９は本体１の側方に突設されたアーム９ａに支持され、
図示しないソレノイドによシ開閉し、ワイヤ３をクラン
プしたシ解放するようになっている。また上クランプ９
の他の役目は、第１接続にボンディングツールがその先
端にボールを保持し、下降する時にワイヤにパックテン
シコンを与えることである。Embodiments of the present invention will be described below with reference to the accompanying drawings. 1 in Figure 1 is the bonding head main body, and this main body I
A wire spool 2 is provided on the upper part of the wire. A wire guide 4 for guiding the wire 3 is provided on the wire feeding side of the main body 1. Further, a free end portion of the wire guide 4 is formed with a curved portion 8 for guiding the wire 3 downward. An upper clamp 9 for clamping and releasing the introduced wire 3 is provided at the lower part of the curved portion 8 of the wire guide 4. This upper clamp 9 is supported by an arm 9a projecting from the side of the main body 1,
It is opened and closed by a solenoid (not shown), and the wire 3 is clamped and released. Also upper clamp 9
Another role of the bonding tool in the first connection is to hold the ball at its tip and give the wire a pack tensile strength as it descends.
一方下クランプ１１は揺動ブラケット１２の先端部に設
けられていて、図示しないソレノイドによって開閉し、
ワイヤ３をクランプしたシ解放したシするようになって
いる。上記揺動ブラケット１２の下側には□これとはげ
平行なボンディングアーム１３が設けられている。この
デンディングアーム１３の先端部にはワイヤ３が挿通さ
れるボンディングツールとしてのキャピラリ１４が設け
られている。上記ポンディングアームノ３は揺動ブラケ
ットに板ばね１３ａ１引張バネ１３ｂを介して保持され
ており、揺動ブラケット１２の基端部を軸支する回動軸
Ｉ５を中心として上下方向に回動するようになっている
。すなわち、下クランプ１１およびキャピラリ）４は一
体となって上下方向に移動するようになっている。上記
キャピラリ１４の先端部から突出するワイヤ３の先端に
はだ−ル１６が後述するス・ぐ−ク発生装置１２によ多
形成されるようになっている。そ°して、ワイヤ３を上
記ボール１６を介してベレット１８にゼンディングしだ
のち、上記キャピラリ１４を移動させリードフレームノ
９にワイヤ３をデンディングするようになっている。上
記スＡ’−り発生装置１７は第２図に示すように構成さ
れている。との第２図はベレット１８上の第１接続点に
ワイヤ３がボール１６を介して圧着された・のち、キャ
ピラリ１４が移動しワイヤ３がさらにリードフレーム１
９の第２接続点に圧着され、上クランｆ９と下クランプ
１０を開放しキャピラリ１４が再び所定位置（＝ｈ）ま
で上昇し下クラン・ぐを閉じてワイヤ３を引きち切らん
とする瞬間の状態を示している。そして図中２０は定電
流源で、この定電流源２０はそのマイナス側をスイッチ
２１を介してリードフレーム１９ＶＣ接Ｆｊｃされ、プ
ラス側をワイヤ３に接続されている。On the other hand, the lower clamp 11 is provided at the tip of the swing bracket 12, and is opened and closed by a solenoid (not shown).
The wire 3 is clamped and released. A bonding arm 13 is provided on the lower side of the swing bracket 12 and parallel to the swing bracket. A capillary 14 serving as a bonding tool through which the wire 3 is inserted is provided at the distal end of the bending arm 13. The above-mentioned pounding arm 3 is held by the swing bracket via a plate spring 13a1 and a tension spring 13b, and rotates in the vertical direction about a rotation axis I5 that pivotally supports the base end of the swing bracket 12. It looks like this. In other words, the lower clamp 11 and the capillary 4 move together in the vertical direction. At the tip of the wire 3 protruding from the tip of the capillary 14, a flange 16 is formed in a spark generator 12, which will be described later. Then, the wire 3 is dended to the pellet 18 via the ball 16, and then the capillary 14 is moved to dend the wire 3 to the lead frame 9. The above-mentioned drift generation device 17 is constructed as shown in FIG. Figure 2 shows that the wire 3 is crimped to the first connection point on the bellet 18 via the ball 16.Then, the capillary 14 is moved and the wire 3 is further connected to the lead frame 1.
The moment when the capillary 14 is crimped to the second connection point of the wire 9, the upper clamp f9 and the lower clamp 10 are opened, the capillary 14 rises again to the predetermined position (=h), the lower clamp is closed, and the wire 3 is about to be torn off. It shows the status of. In the figure, reference numeral 20 denotes a constant current source, the negative side of which is connected to the lead frame 19VC Fjc via a switch 21, and the positive side connected to the wire 3.
上記スイッチ２１は半導体を使用した無接点スイッチで
あシワイヤ３がリードフレーム１９に接続されたのち、
キャピラリが所定の高さまで上昇し、たあと下クランパ
１１が閉じる直前にＯＮとカリワイヤに一定電流を流す
ようになっている。The switch 21 is a non-contact switch using a semiconductor, and after the wire 3 is connected to the lead frame 19,
After the capillary rises to a predetermined height, a constant current is applied to the ON and pot wires immediately before the lower clamper 11 closes.
一方定電流源２０と直列に′電流検出用抵抗２２ （＝
１０Ω）が設置されており、これは両端における電圧降
下からワイヤに流れる電流を検出するために用いられる
。この電流を検出することによりワイヤが第２接続点で
切れた時点を検出することも可能となる。On the other hand, a current detection resistor 22 (=
10Ω), which is used to detect the current flowing in the wire from the voltage drop across it. By detecting this current, it is also possible to detect when the wire is broken at the second connection point.
スイッチ２１の開閉タイミング、定電流源への電流指令
値はボンディング制御装置２３から出される。−実電流
検出用抵抗２２はデンディング制御装置に接続され、そ
の電圧降下から電流が求められる。The opening/closing timing of the switch 21 and the current command value to the constant current source are output from the bonding control device 23. - The actual current detection resistor 22 is connected to a dending control device, and the current is determined from the voltage drop.
つぎに、上記のように構成されたこの発明の作用につい
て説明する。ワイヤ３がリードフレーム１９上の第２接
続点に接続されたのち、キャピラリが一定高さく＝ｈ）
まで上昇し、下クランパ１ノでワイヤをフランジする。Next, the operation of this invention configured as described above will be explained. After the wire 3 is connected to the second connection point on the lead frame 19, the capillary is at a certain height = h)
and flange the wire with the lower clamper 1.
そのあと上クランパはキャピラリ１４と一体となシ再度
上方へ上昇する。この上昇時にワイヤ３に一定電流が流
れる。ワイヤ３は第２接続点の近傍で破断するが、との
形）１間スパークが生じ、この放電エネルギーでワイヤ
３の先端が溶融し１、第３図（ｂ）に示すようにボール
１６が形成される。このボール１６の直径はワイヤ３に
流す電流の強さ、放電の発生時間および第２接続点にボ
ンディングしたのちワイヤ３を上方に移動させるスピー
ドを変化させることによシ大きく変化する。そして上記
実施例においてはワイヤ３を上方に移動させるスピード
と放電の発生時間を一定とし電流の強さによシボールＩ
６の直径を制御している。しかし、一定電流を流し、放
電時間を変化させてもゴール１６の直径を容易に制御す
るととができる。放電時間を変化させるには、スパーク
の発生を検出したのち一定時間後にスイッチ２ノをオフ
にすればよい。Thereafter, the upper clamper moves upward again together with the capillary 14. A constant current flows through the wire 3 during this rise. The wire 3 breaks near the second connection point, but a spark occurs (in the form of 1), and this discharge energy melts the tip of the wire 3, causing the ball 16 to break as shown in Figure 3(b). It is formed. The diameter of this ball 16 can be greatly varied by changing the strength of the current flowing through the wire 3, the time at which the discharge occurs, and the speed at which the wire 3 is moved upward after bonding to the second connection point. In the above embodiment, the speed at which the wire 3 is moved upward and the time at which the discharge occurs are kept constant, and the strength of the current varies depending on the current strength.
6 diameter is controlled. However, the diameter of the goal 16 can be easily controlled even if a constant current is applied and the discharge time is varied. In order to change the discharge time, it is sufficient to turn off the switch 2 after a certain period of time after detecting the occurrence of a spark.
一方他の実施例とし５て、ワイヤの切断及び放電の発生
を検出したあと、ワイヤの上昇を停止させ、この状態で
ワイヤに流す電流と時間を制御しボールを形成すること
もできた。On the other hand, as another example 5, after detecting the wire breakage and the occurrence of discharge, the wire was stopped from rising, and in this state, the current and time applied to the wire were controlled to form a ball.
この方法では若干の時間（約１０ｍ５）を消費するがよ
りボール径のバラツキが少い結果が得られた。Although this method consumed some time (approximately 10 m5), results with less variation in ball diameter were obtained.
つぎに第４図はこの発明の他の実施例を示し。Next, FIG. 4 shows another embodiment of this invention.
たものでワイヤ３をリードフレーム１９上の第２接続点
Ａに接続し７たのち、ワイヤを繰す出１−７てさらにこ
の第２接続点Ａの近傍のＢ点にボンディングし、続いて
ワイヤ３を切断し、ス・り一りを発生させゾール１６を
形成する・
このように第２接続点に２回ポンディングすることによ
り、第４図（ｂ）の従来方法の場合にス・や−クの発生
によシ第２接続点Ａ′のボンデイン／
グ強度が弱くなるという虞れがなくなりワイヤ６１
ボンディングの信頼性が線上１′ル。After connecting the wire 3 to the second connection point A on the lead frame 19 with a wire 7, the wire is fed out and bonded to a point B near the second connection point A, and then The wire 3 is cut, a slit is generated, and a sol 16 is formed. By pounding the second connection point twice in this way, the slit 16 is formed by bonding the wire 3 twice in the case of the conventional method shown in FIG. 4(b). There is no longer any possibility that the bonding strength of the second connection point A' will be weakened due to the occurrence of a leak, and the reliability of the bonding of the wire 61 is now on the level of 1'.
以下説明したように、この発明においてυ−、ワイヤに
ボールを形成するのにワイヤに電流を流しワイヤが破断
するときス・ぐ−クによりボールを形成するので従来１
のようにトーチまたは電極をワイヤの直下まで移動させ
る必要がなくなシビンディングスピードを短縮すること
が城能となるだけでなく構造が簡単となシ装置の信頼性
が向上しコストタ゛ウンとなる。、さらに電流を直接ワ
イヤに流し破断時のスｉＺ−りによｐボールを形成する
ことによシボール径が均一となシボンディングの品質が
向上するという効果を奏する。As explained below, in the present invention, in order to form a ball on a wire, a current is applied to the wire and when the wire breaks, the ball is formed by squeezing.
It is not necessary to move the torch or electrode directly under the wire as in the case of the present invention, which not only makes it possible to shorten the shebbing speed, but also improves the reliability of the device due to its simple structure and reduces costs. Moreover, by directly passing a current through the wire and forming a p-ball by the zigzag at the time of rupture, the quality of the bonding with uniform p-ball diameter is improved.
また従来行っていたトーチ棒にたまる酸化物を洗浄する
という手数もはぶくことができた。It also eliminates the hassle of cleaning the oxide that accumulates on the torch rod, which was previously done.
さらに従来は約１０００Ｖの高圧によシス・ぐ−りを発
生させていたが、このような電気回路が不用となシノイ
ズの発生も少くなった。Furthermore, conventionally, a high voltage of approximately 1000 V was used to generate noise, but this type of electric circuit is no longer necessary, and the generation of noise has been reduced.
第１図はとの発明の一実施例に用いられるワイヤデンデ
ィング装置を示す側面図、第２図は同じくがンディング
装置の要部のみを示す側面図、第３図はとの発明の動作
説明図、第４図はこの発明の他の実施例を示す斜視図で
ある。
２・・・ワイヤスグール、３・・・ワイヤ、４・・・ワ
イヤガイド、９・・・上フラング、１１・・・下フラン
ジ、１４・・・キャビ゛ラリ（ボンディングツール）、
１６・・・ボール、１２・・・揺動ブラケット、１３・
・・ビンディングアーム。
出願人代理人 弁理士 鈴 江 武 音節１図
第２図Fig. 1 is a side view showing a wire ending device used in one embodiment of Hato's invention, Fig. 2 is a side view showing only the main parts of the same wire ending device, and Fig. 3 is an explanation of the operation of Hato's invention. 4 are perspective views showing other embodiments of the present invention. 2... Wire guide, 3... Wire, 4... Wire guide, 9... Upper flange, 11... Lower flange, 14... Cavity (bonding tool),
16... Ball, 12... Rocking bracket, 13.
・Binding arm. Applicant's representative Patent attorney Takeshi Suzue Syllable 1 Figure 2
Claims (4)
イヤガイドを介してクランＡ’およ′びボンディングツ
ールに順次導入し、このビンディングツールの上下動に
よって上記ワイヤを第１接続点および第２接続点に順に
接続する方法において、ワイヤを第２接続点に接続した
のちワイヤをプルカットする際ワイヤと第２接続点の間
に電流を流し、ワイヤが破断したときスパークを発生さ
せることによシワイヤ先端にボールを形成することを特
徴とするワイヤボンディング方法。(1) The wire fed out from the wire feeding device is sequentially introduced into the clan A' and the bonding tool via the wire guide, and the wire is connected to the first connection point and the second connection point by vertical movement of the binding tool. In this method, when the wire is connected to the second connection point and then the wire is pulled cut, a current is passed between the wire and the second connection point, and when the wire breaks, a spark is generated and the tip of the shear wire is pulled. A wire bonding method characterized by forming a ball.
−だのちにワイヤに流す電流及び時間を変えるととによ
り？−ルの直径を制御することを特徴とする特許請求の
範囲第１項記載のワイヤボンディング方法。(2) A spark occurs between the second connection point and the wire.
-By changing the current and time applied to the wire later? 2. The wire bonding method according to claim 1, wherein the diameter of the wire is controlled.
が上昇してプルカットし、とのゾルカットにおいて、ス
パークの発生を検出したのち、クランパの上昇を停止さ
せ放電時間を制御することによυボールの直径を制御す
ると♂を特徴とする特許請求の範囲第１項記載のワイヤ
ボンディング方法。(3) Clamp/Flange the wire with clamper 4
Claims characterized in that the diameter of the υ ball is controlled by stopping the rise of the clamper and controlling the discharge time after detecting the occurrence of a spark in the sol cut with the rise of the clamper. The wire bonding method according to item 1.
らに微小量のワイヤを繰り出し上記第２接続点の近傍に
ボンディングし１、その後にゾルカットすることを特徴
とする特Ｗ「請求の範囲第１項記載のワイヤどンディン
グ方法。(4) After bonding the wire to the F2 connection point, a minute amount of wire is fed out and bonded near the second connection point 1, and then sol cut is performed. Wire ending method described.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58020093A JPS59150435A (en) | 1983-02-09 | 1983-02-09 | Wire bonding method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58020093A JPS59150435A (en) | 1983-02-09 | 1983-02-09 | Wire bonding method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59150435A true JPS59150435A (en) | 1984-08-28 |
Family
ID=12017494
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58020093A Pending JPS59150435A (en) | 1983-02-09 | 1983-02-09 | Wire bonding method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59150435A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7227095B2 (en) * | 2003-08-06 | 2007-06-05 | Micron Technology, Inc. | Wire bonders and methods of wire-bonding |
-
1983
- 1983-02-09 JP JP58020093A patent/JPS59150435A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7227095B2 (en) * | 2003-08-06 | 2007-06-05 | Micron Technology, Inc. | Wire bonders and methods of wire-bonding |
| US7977597B2 (en) | 2003-08-06 | 2011-07-12 | Micron Technology, Inc. | Wire bonders and methods of wire-bonding |
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