JPS59149045A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS59149045A JPS59149045A JP58023960A JP2396083A JPS59149045A JP S59149045 A JPS59149045 A JP S59149045A JP 58023960 A JP58023960 A JP 58023960A JP 2396083 A JP2396083 A JP 2396083A JP S59149045 A JPS59149045 A JP S59149045A
- Authority
- JP
- Japan
- Prior art keywords
- base
- transistor
- polycrystalline silicon
- resistance
- isolated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 32
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000000605 extraction Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 abstract description 14
- 229910021339 platinum silicide Inorganic materials 0.000 abstract description 14
- 230000003647 oxidation Effects 0.000 abstract description 4
- 238000007254 oxidation reaction Methods 0.000 abstract description 4
- 239000012212 insulator Substances 0.000 abstract description 3
- 229920005591 polysilicon Polymers 0.000 description 9
- 150000004767 nitrides Chemical class 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910001374 Invar Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- -1 boron ions Chemical class 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58023960A JPS59149045A (ja) | 1983-02-16 | 1983-02-16 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58023960A JPS59149045A (ja) | 1983-02-16 | 1983-02-16 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59149045A true JPS59149045A (ja) | 1984-08-25 |
| JPH0425711B2 JPH0425711B2 (fr) | 1992-05-01 |
Family
ID=12125110
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58023960A Granted JPS59149045A (ja) | 1983-02-16 | 1983-02-16 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59149045A (fr) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62120354U (fr) * | 1986-01-22 | 1987-07-30 | ||
| US4951102A (en) * | 1988-08-24 | 1990-08-21 | Harris Corporation | Trench gate VCMOS |
| US5032529A (en) * | 1988-08-24 | 1991-07-16 | Harris Corporation | Trench gate VCMOS method of manufacture |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55103740A (en) * | 1979-01-31 | 1980-08-08 | Nec Corp | Semiconductor device |
| JPS55125651A (en) * | 1979-03-22 | 1980-09-27 | Nec Corp | Production of semiconductor integrated circuit |
| JPS5613020A (en) * | 1979-07-13 | 1981-02-07 | Norio Owaki | Purifying apparatus of polluted air |
| JPS56116618A (en) * | 1980-02-20 | 1981-09-12 | Toshiba Corp | Manufacture of semiconductor device |
-
1983
- 1983-02-16 JP JP58023960A patent/JPS59149045A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55103740A (en) * | 1979-01-31 | 1980-08-08 | Nec Corp | Semiconductor device |
| JPS55125651A (en) * | 1979-03-22 | 1980-09-27 | Nec Corp | Production of semiconductor integrated circuit |
| JPS5613020A (en) * | 1979-07-13 | 1981-02-07 | Norio Owaki | Purifying apparatus of polluted air |
| JPS56116618A (en) * | 1980-02-20 | 1981-09-12 | Toshiba Corp | Manufacture of semiconductor device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62120354U (fr) * | 1986-01-22 | 1987-07-30 | ||
| US4951102A (en) * | 1988-08-24 | 1990-08-21 | Harris Corporation | Trench gate VCMOS |
| US5032529A (en) * | 1988-08-24 | 1991-07-16 | Harris Corporation | Trench gate VCMOS method of manufacture |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0425711B2 (fr) | 1992-05-01 |
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