JPS59144141A - Wire bonding device - Google Patents

Wire bonding device

Info

Publication number
JPS59144141A
JPS59144141A JP58017357A JP1735783A JPS59144141A JP S59144141 A JPS59144141 A JP S59144141A JP 58017357 A JP58017357 A JP 58017357A JP 1735783 A JP1735783 A JP 1735783A JP S59144141 A JPS59144141 A JP S59144141A
Authority
JP
Japan
Prior art keywords
wire
bonding
tool
neck
wire bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58017357A
Other languages
Japanese (ja)
Inventor
Tamotsu Usami
保 宇佐美
Masayuki Shirai
優之 白井
Yasuyuki Yamazaki
康行 山崎
Ken Okuya
謙 奥谷
Kanji Otsuka
寛治 大塚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58017357A priority Critical patent/JPS59144141A/en
Publication of JPS59144141A publication Critical patent/JPS59144141A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48095—Kinked
    • H01L2224/48096—Kinked the kinked part being in proximity to the bonding area on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/15165—Monolayer substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To enhance the reliability of bondings by performing the first and second bondings by a bonding tool under different directions and different conditions, thereby improving the strength of the wire and preventing the mutual contact of the wires. CONSTITUTION:The end of a wire 15 is bonded on a pad 20a of a pellet 20 in the state directed rightward at the first bonding time, a tool 14 is then moved rightward while bending the wire in reverse direction, the wire is bonded to the inner part 18a of an external lead 18 at the second bonding time, the wire is pulled and disconnected from the neck, and cut. In this manner, a crack to the net is prevented at the first bonding time to improve the bonding strength, and the cutting at the net at the second bonding time is facilitated, thereby readily bonding.

Description

【発明の詳細な説明】 本発明は高密度高集積のＬＳＩの製造において、高信頼
性のワイヤボンディングを行なうことができるワイヤボ
ンディング装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a wire bonding apparatus that can perform highly reliable wire bonding in the production of high-density, highly integrated LSIs.

半導体装置のパッケージ内に内装した半導体素子ペレッ
トとパッケージの外部リードとを電気的に接続するため
にワイヤボンディングが行なわれる。このワイヤボンデ
ィングには種々の方式のものが提案されているが、いず
れもＡ召やＡｕ等の金属細線をワイヤとして用い、これ
をボンディングツールを使用して熱或いは超音波にて押
し潰しながらペレットや外部リードに接続する点では共
通している。例えば、第１図はＡ４線をワイヤ５として
用いた例であり、ベレット１表面に設けたパッド２と、
パッケージ３の外部リードインナ部４との間に夫々超音
波を利用してワイヤ５を接続している。この場合、ボン
ディングツール６は同図示のようにペレットと外部リー
ド間にわたって往復移動され、先ずペレット側にボンデ
ィングしく第１ボンデイング）、次に外部リード側にボ
ンディング（第２ボンデイング）する。Wire bonding is performed to electrically connect a semiconductor element pellet housed in a package of a semiconductor device to an external lead of the package. Various methods have been proposed for this wire bonding, but all of them use thin metal wires such as A or Au as wires, and use a bonding tool to crush them using heat or ultrasonic waves to form pellets. They are common in that they connect to external leads. For example, FIG. 1 shows an example in which A4 wire is used as the wire 5, and the pad 2 provided on the surface of the pellet 1,
Wires 5 are connected to the outer lead inner part 4 of the package 3 using ultrasonic waves. In this case, the bonding tool 6 is moved back and forth between the pellet and the external lead as shown in the figure, first bonding to the pellet side (first bonding) and then bonding to the external lead side (second bonding).

ところでこの種のワイヤボンディングでは、ツール６先
端の後側角部の曲率が大きな問題となる。However, in this type of wire bonding, the curvature of the rear corner of the tip of the tool 6 poses a major problem.

即ち、同図のように角部７の曲率が小さいと第１ボンデ
イングＢ１のネック部Ｎ、か細くなってクラックが生じ
易くなりワイヤ切れを生じる原因となる。また、角部７
の曲率が大きいと第２ボンデイングＢ２のネック部Ｎ２
が太すぎて所謂ワイヤの引きちぎり切断を良好に行なう
ことができないという問題が生じる。That is, if the curvature of the corner portion 7 is small as shown in the figure, the neck portion N of the first bonding B1 becomes thinner and more likely to cause cracks, resulting in wire breakage. Also, the corner 7
If the curvature of is large, the neck part N2 of the second bonding B2
A problem arises in that the wire is too thick and the so-called tearing and cutting of the wire cannot be performed satisfactorily.

また、他の問題として、ワイヤ５に極細線を使用してい
るためにミ第１．第２のボンディング間に形成されるワ
イヤループ形状を所要の形状に設定することが難かしく
、ワイヤループ形状のこの無節度によって隣接するワイ
ヤ同志の短絡やワイヤとペレット、外部リードとの短絡
事故が生じ易い。特に近年の高密度、高集積のＬＳＩで
は隣接するワイヤの相互間距離が漸減する傾向にあり、
また場合によってはワイヤを立体交差させる必要もあっ
て前記したワイヤ相互の短絡が増々発生し易いものにな
っている。Another problem is that the wire 5 is made of ultra-thin wire. It is difficult to set the wire loop shape formed between the second bonding to the desired shape, and this unmoderated wire loop shape can cause short circuits between adjacent wires or short circuits between wires and pellets or external leads. Easy to occur. In particular, in recent years of high-density, highly integrated LSIs, the distance between adjacent wires has tended to gradually decrease.
Further, in some cases, it is necessary to cross the wires three-dimensionally, making it increasingly likely that the aforementioned short circuits between the wires will occur.

したがって本発明の目的は、ワイヤボンディングを容易
に行ない得る一方でワイヤ強度の向上、相互接触の防止
を図ってボンディングの信頼性を高めることができるワ
イヤボンディング装置を提供することにある。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a wire bonding apparatus that can easily perform wire bonding, improve wire strength, prevent mutual contact, and improve bonding reliability.

この目的を達成するために本発明はボンディングツール
による第１．第２のワイヤボンディングを夫々異なる方
向や異なる条件でツールを作動し得るように構成したも
のである。To achieve this objective, the present invention provides a first bonding tool. The second wire bonding is configured so that the tool can be operated in different directions and under different conditions.

以下、本発明を図示の実施例により説明する。Hereinafter, the present invention will be explained with reference to illustrated embodiments.

第２図は本発明のワイヤボンディング装置を示し、ＸＹ
テーブル１０上に塔載したボンディングヘッド１１には
超音波振動源１２を設け、この振動源１２に連設したホ
ーン１３をボンディングアームとして上下揺動可能に設
けている。このホーン１３の先端にはボンディングツー
ル１４を取着し、Ａ４の極細線からなるワイヤ１５の先
端を挿通している。一方、前記ツール１４の下方位置に
はボンディングステージ１６を配設し、ワイヤボンディ
ングされる半導体構体１７、即ち外部リード１８を有す
るパッケージ１９内にペレット２０を固着したものを載
置している。FIG. 2 shows the wire bonding apparatus of the present invention,
A bonding head 11 mounted on a table 10 is provided with an ultrasonic vibration source 12, and a horn 13 connected to the vibration source 12 is provided as a bonding arm so as to be vertically swingable. A bonding tool 14 is attached to the tip of this horn 13, and the tip of a wire 15 made of an A4 ultra-fine wire is inserted therethrough. On the other hand, a bonding stage 16 is disposed below the tool 14, and a semiconductor structure 17 to be wire-bonded, that is, a package 19 having an external lead 18 with a pellet 20 fixed thereon is placed thereon.

そして、本例にあっては前記ボンディングツール１４を
第３図に拡大して示すように、ツール１４の略中夫にワ
イヤ挿通孔２１を形成すると共に、この挿通孔２１の図
示右側開口縁部２２を曲率の大きな形状とし、また、ツ
ール１４の図示左側開口縁部２３を曲率の小さな形状と
している。In this example, as shown in an enlarged view of the bonding tool 14 in FIG. 22 has a shape with a large curvature, and the opening edge 23 on the left side of the drawing of the tool 14 has a shape with a small curvature.

以上の構成によれば、第４図に示すように、ペレット２
０のバンド２０ａ上への第１ボンディング時には、ワイ
ヤ１５の先端を図示右方へ向けた状態でワイヤボンディ
ングを行ない、その後ワイヤを逆方向に曲げながらツー
ル１４を右方向に移動して外部リード１８のインナ部１
８ａに第２ボンデイングを行ない更にそのネック部から
ワイヤを引きちぎって切断することによりワイヤボンデ
ィングを完了することができる。この場合、ツール１４
とワイヤ１５との位置関係上、第１ボンデイングはツー
ルの下端面右側で行ない、第２ボンデイングは下端面左
側で行なうことになる。According to the above configuration, as shown in FIG.
During the first bonding onto the band 20a of the wire 15, wire bonding is performed with the tip of the wire 15 facing right in the figure, and then the tool 14 is moved to the right while bending the wire in the opposite direction to connect the external lead 18. Inner part 1 of
Wire bonding can be completed by performing a second bonding on 8a and then tearing and cutting the wire from its neck. In this case, tool 14
Due to the positional relationship between the tool and the wire 15, the first bonding is performed on the right side of the lower end surface of the tool, and the second bonding is performed on the left side of the lower end surface of the tool.

したがって、このワイヤボンディングによれば、第１ボ
ンデイングにおけるワイヤのネック部は曲率の大きな右
側開口縁部２２により形成されるため、ネック部Ｎ１１
は然程押し潰されることはなく充分な強度を保持し、ク
ラックも生じない。一方、第２ボンデイングにおいては
ワイヤのネック部Ｎ、。Therefore, according to this wire bonding, since the neck portion of the wire in the first bonding is formed by the right opening edge 22 having a large curvature, the neck portion N11
It does not get crushed much and maintains sufficient strength, and no cracks occur. On the other hand, in the second bonding, the neck portion N of the wire.

を曲率の小さな左側開口縁部２３により形成しているの
でネック部の押し潰し曲率が小となり、ネック部におけ
るワイヤ切断を容易なものとする。Since the left opening edge 23 has a small curvature, the crushing curvature of the neck part is small, and the wire can be easily cut at the neck part.

更に、ワイヤは第１ボンデイングにおけるワイヤ延長方
向と逆向きにループを形成しているため、ワイヤ１５の
張設時にワイヤにしなりが入ると共にワイヤ１５とワイ
ヤ挿通孔２１の内面との間に適宜な摩擦が生じてワイヤ
バックを防止し、これにより所望のループ形状を容易に
得、かつ安定した形状にできる。Furthermore, since the wire forms a loop in the opposite direction to the wire extension direction in the first bonding, the wire 15 is bent when it is stretched, and there is an appropriate gap between the wire 15 and the inner surface of the wire insertion hole 21. Friction occurs to prevent wire back, thereby making it easier to obtain a desired loop shape and making it stable.

ここで、ワイヤループの形状を所望の形状にコントロー
ルする場合には、ループ形状の頂上に相当するワイヤ部
分に超音波を加えてワイヤにダメージを与えワイヤ曲り
を容易にしたり、ワイヤの相当部分を加熱して曲り易く
してもよい。この場合、超音波の印加はワイヤの相当部
分がツール内を通過するときにツールを振動させる構成
とすればよい。また、加熱の場合には水素トーチや電気
トーチをツールの近傍に設け、ツールの移動タイミング
に合わせてトーチをワイヤに当てるように構成すればよ
い。In order to control the shape of the wire loop into a desired shape, it is necessary to apply ultrasonic waves to the portion of the wire corresponding to the top of the loop shape to damage the wire and make it easier to bend the wire. It may be heated to make it easier to bend. In this case, the application of ultrasonic waves may be configured to cause the tool to vibrate when a substantial portion of the wire passes through the tool. Further, in the case of heating, a hydrogen torch or an electric torch may be provided near the tool, and the torch may be applied to the wire in accordance with the movement timing of the tool.

また、ワイヤループ形状をコントロールするための他の
構成としては、第５図に示すように、ツール１４の背後
に設けた公知のクランパ２４と共にノツチ形成部２５を
設けてもよい。このノツチ形成部２５は楔状に形成した
一対の挟圧片２６゜２６をワイヤ１５を挟むようにして
設け、両挟圧片２６，２６を互に近接させたときにはワ
イヤ１５にノツチ（楔状の食い込み）を形成するように
したものである。Further, as another configuration for controlling the wire loop shape, as shown in FIG. 5, a notch forming portion 25 may be provided together with a known clamper 24 provided behind the tool 14. This notch forming portion 25 is provided with a pair of wedge-shaped clamping pieces 26° 26 sandwiching the wire 15, and when the clamping pieces 26, 26 are brought close to each other, a notch (wedge-shaped bite) is formed in the wire 15. It was designed so that it could be formed.

したがって、ワイヤボンディング装置に、予めワイヤル
ープ形状の情報を入力しておけば、ツール１４の移動に
伴なってワイヤがツールに対して相対移動するときにそ
のタイミングに合わせてノツチ形成部２５を作動させ、
第６図に示すようにワイヤ１５の必要箇所（１箇所ない
し複数箇所）にノツチＮを形成する。このノツチＮによ
りワイヤ１５は曲りが容易になり、ノツチ位置に応じた
ループ形状の曲成を簡単に行なうことができる。Therefore, by inputting wire loop shape information into the wire bonding apparatus in advance, the notch forming section 25 is activated in accordance with the timing when the wire moves relative to the tool as the tool 14 moves. let me,
As shown in FIG. 6, notches N are formed at necessary locations (one or more locations) on the wire 15. This notch N allows the wire 15 to be easily bent, and can be easily bent into a loop shape depending on the notch position.

一方、前述した第１ボンデイングを良好なものにするた
めには、第２ボンデイングを行なった直後に、第７図に
示すようにツール１４Ａを後方へ移動して次の第１ボン
デイングに必要とされるワイヤ長をツール下端に確保し
、その上でワイヤ１５Ａをクランプしてワイヤ切断を行
なうようにする。On the other hand, in order to make the above-mentioned first bonding good, immediately after performing the second bonding, move the tool 14A backward as shown in FIG. The wire length is secured at the lower end of the tool, and the wire 15A is clamped on the wire length to cut the wire.

このようにすれば、従来のようなワイヤ切断後における
ワイヤフィード方法と異なってツール下方に延在させる
ワイヤ長を常に一定に保持でき、次のワイヤボンディン
グ工程の第１ボンデイングにおけるワイヤテールを一定
化して良好なワイヤボンティングを可能にする。この作
動はワイヤボンディングの制御部におけるシーケンスを
適宜に調整すれば簡単に行なうことができる。In this way, unlike the conventional wire feeding method after cutting the wire, the length of the wire extending below the tool can always be kept constant, and the wire tail in the first bonding of the next wire bonding process can be kept constant. enables good wire bonding. This operation can be easily performed by appropriately adjusting the sequence in the wire bonding control section.

更に前述した構成のものにおいて、ツール１４Ａを同図
のように後方へ移動させた時点でツールに下方の力を加
えてワイヤのその部分を若干押し潰しておけば、第８図
に鎖線で示すようにワイヤ１５Ａ、の中心がツール１４
Ａの中心位置から偏位するような現象が防止でき、同図
実線のようにワイヤ１５Ａ、を常にツール中心位置に確
保できる。Furthermore, in the configuration described above, when the tool 14A is moved backward as shown in the same figure, if a downward force is applied to the tool to slightly crush that part of the wire, the wire will be compressed as shown by the chain line in FIG. so that the center of the wire 15A is the tool 14
A phenomenon in which the wire 15A deviates from the center position can be prevented, and the wire 15A can always be maintained at the center position of the tool as shown by the solid line in the figure.

これにより、ワイヤボンディング位置を高精度に管理で
きると共に良好なワイヤボンディングを可能とする。This makes it possible to manage the wire bonding position with high precision and to perform good wire bonding.

なお、このようなワイヤ１５Ａのテール長の確保や中心
位置の確保はワイヤ１５Ａの先端方向の関係から従来と
同一構造のボンディングツールを使用した場合に特に有
効となる。Note that securing the tail length and center position of the wire 15A is particularly effective when using a bonding tool having the same structure as the conventional one due to the direction of the tip of the wire 15A.

第９図は本発明装置の他の実施例を示しており、特に第
１ボンデイングと第２ボンデイングの各ネック部を夫々
好ましい状態に確保することができる例である。即ち、
本例のボンディングツール１４Ｂは、従来のツールより
もワイヤ長さ方向の下端面寸法召、を小さくし、こめツ
ール１４Ｂをワイヤ１５Ｂに押圧しながら所定長さだけ
ワイヤ方向に移動させることによりボンディングを行な
っている。そして、第１ボンディング時にあってはツー
ルの移動に伴なって超音波のパワーを漸減させ、逆に第
２ボンディング時にあっては漸増させるように構成して
いるのである。FIG. 9 shows another embodiment of the device of the present invention, and in particular is an example in which the respective necks of the first bonding and the second bonding can be maintained in preferable conditions. That is,
The bonding tool 14B of this example has a lower end surface dimension in the wire length direction smaller than that of conventional tools, and performs bonding by moving the bonding tool 14B a predetermined length in the wire direction while pressing the wire 15B. I am doing it. The ultrasonic power is gradually decreased during the first bonding as the tool moves, and conversely, it is gradually increased during the second bonding.

このような構成とすれば、ボンディングされたワイヤ１
５Ｂは、同図のように第１ボンデイング部Ｂ、では超音
波パワーの順誠によってネック部Ｎ２．での潰され程度
が小さくて曲率の大きなネック部となり、第２ボンディ
ング部Ｂ２では超音波パワーの漸増によってネック部Ｎ
２ｔでの潰されが大きくて曲率の小さなネック部となる
。これにより、第１ボンデイングにおけるネック部の強
度を向上してクラック等の発生を防止する一方で、第２
ボンデイングにおけるネック部での切断を容易にできる
。With such a configuration, the bonded wire 1
5B, as shown in the figure, at the first bonding part B, the neck part N2. At the second bonding part B2, the degree of crushing is small and the neck part has a large curvature.At the second bonding part B2, the neck part N
The neck portion is greatly crushed at 2t and has a small curvature. This improves the strength of the neck part in the first bonding and prevents the occurrence of cracks, while the second
Cutting at the neck part during bonding can be facilitated.

なお、本例のようにネック部の曲率な相違させることは
、第３図に示した実施例のツールにおいてもツールの下
端面の半分を利用しているため、これを用いてツールの
移動および超音波ノくワーの増減を行なえば同様な結果
を得ることができる。Note that the reason why the curvature of the neck portion is different as in this example is that half of the lower end surface of the tool is used in the tool of the example shown in FIG. Similar results can be obtained by increasing or decreasing the number of ultrasonic nozzles.

以上のように本発明のワイヤボンディング装置によれば
、ワイヤボンディングツールを第１ボンディング時と第
２ボンディング時とで夫々異なる条件でボンディング作
動し得るよう（（構成しているので、第１ボンデイング
におけるネックへのクラックの発生を防止してボンディ
ング強度の向上を図る一方で第２ボンデイングにおける
ネック部での切断を容易にしてボンディングの容易化を
図り、更にワイヤループ形状のコントロールおよびその
安定性を高めて隣接するワイヤ相互間やその他の箇所と
の短絡を防止することができる等、ワイヤボンディング
の信頼性を格段に高めることができるという効果を奏す
る。As described above, according to the wire bonding apparatus of the present invention, the wire bonding tool is configured to operate under different conditions for the first bonding and the second bonding. This prevents cracks from occurring at the neck and improves bonding strength, while making it easier to cut at the neck in the second bonding process, making bonding easier, and further improving the control and stability of the wire loop shape. This has the effect that the reliability of wire bonding can be significantly improved, such as by being able to prevent short circuits between adjacent wires or with other locations.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は従来の一般的なレイヤボンディングを説明する
ための断面図、 第２図は本発明のワイヤボンディング装置の全体構成図
、 第３図はツールの拡大図、 第４図はワイヤボンディング状態を示す拡大正面図、 第５図は変形例のツール近傍の構成図、第６図はノツチ
を入れた状態のワイヤを示す図、第７図は他の有効な例
を説明するための作動説明図、 第８図はツールを左側面から見た図、 第９図は他の実施例のワイヤボンディング状態を説明す
るための正面図である。 １０・・・ＸＹテーブル、１１・・・ボンディングヘッ
ド、１３・・・ホーン、１４，１４Ａ、１４Ｂ・・・ボ
ンディングソール、１５，１５Ａ、１５Ｂ・・・ワイヤ
、１９・・・パッケージ、２０・・・ペレット、２１・
・・ワイヤ相互間、２２・・・右側開口縁部、２３・・
左側開口縁部、２４・・クランパ、２５・・・ノツチ形
成部、Ｂ。 ・・・第１ボンディング部、Ｂ２・・・第２ボンディン
グ部、Ｎ、　、　Ｎ、　、ｔ　Ｎ、、　、　Ｎ、□、　
Ｎ２８．　Ｎ、・・・ネック部。 代理人　弁理士　　高　橋　明　〜ニー第　　１　　図 σ 第　　２　図 、第　３　図 第　　５　　図Fig. 1 is a sectional view for explaining conventional general layer bonding, Fig. 2 is an overall configuration diagram of the wire bonding apparatus of the present invention, Fig. 3 is an enlarged view of the tool, and Fig. 4 is the wire bonding state. FIG. 5 is a configuration diagram near the tool of the modified example, FIG. 6 is a diagram showing the wire with the notch inserted, and FIG. 7 is an operation explanation to explain another effective example. 8 is a view of the tool seen from the left side, and FIG. 9 is a front view for explaining the wire bonding state of another embodiment. 10... XY table, 11... Bonding head, 13... Horn, 14, 14A, 14B... Bonding sole, 15, 15A, 15B... Wire, 19... Package, 20...・Pellet, 21・
... Between the wires, 22 ... Right side opening edge, 23 ...
Left opening edge, 24... clamper, 25... notch forming part, B. ...First bonding part, B2...Second bonding part, N, , N, , t N, , N, □,
N28. N...Neck part. Agent Patent Attorney Akira Takahashi - Knee Figure 1 σ Figure 2, Figure 3 Figure 5

Claims (1)

【特許請求の範囲】 １、　ワイヤを被ボンディング部に押圧してワイヤボン
ディングを行なうボンディングツールを備えるワイヤボ
ンディング装置において、前記ポンプイングツ〜ルを第
１ボンディング時と第２ボンディング時とで夫々異なる
条件でボンディングし得るよう構成したことを特徴とす
るワイヤボンディング装置。 ２、第１ボンデイングのネック部の曲率を小さくする一
方、第２ボンデイングのネック部の曲率を大きくするよ
うにボンディングツールの形状を設定してなる特許請求
の範囲第１項記載のワイヤボンディング装置。 ３、　ワイヤループを第１ポン−ディング方向と逆方向
に延在し得るように構成してなる特許請求の範囲第１項
又は第２項記載のワイヤボンディング装置。[Claims] 1. In a wire bonding apparatus equipped with a bonding tool that performs wire bonding by pressing a wire against a bonded part, the pumping tool is operated under different conditions during first bonding and during second bonding. A wire bonding device characterized in that it is configured to perform bonding. 2. The wire bonding apparatus according to claim 1, wherein the shape of the bonding tool is set so that the curvature of the neck of the first bonding is made small while the curvature of the neck of the second bonding is made large. 3. The wire bonding apparatus according to claim 1 or 2, wherein the wire loop is configured to extend in a direction opposite to the first bonding direction.
JP58017357A 1983-02-07 1983-02-07 Wire bonding device Pending JPS59144141A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58017357A JPS59144141A (en) 1983-02-07 1983-02-07 Wire bonding device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58017357A JPS59144141A (en) 1983-02-07 1983-02-07 Wire bonding device

Publications (1)

Publication Number Publication Date
JPS59144141A true JPS59144141A (en) 1984-08-18

Family

ID=11941788

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58017357A Pending JPS59144141A (en) 1983-02-07 1983-02-07 Wire bonding device

Country Status (1)

Country Link
JP (1) JPS59144141A (en)

Similar Documents

Publication Publication Date Title
US4327860A (en) Method of making slack free wire interconnections
US6662993B2 (en) Bondhead lead clamp apparatus
JPH0377662B2 (en)
JPH07335688A (en) Ball bonding method of improved capillary and fine pitch
JP3049515B2 (en) Wire bonding method
JPH04294552A (en) Wire-bonding method
JPS59144141A (en) Wire bonding device
JP3128718B2 (en) Wire bonding method
JPH0530058B2 (en)
JPH04255237A (en) Manufacture of semiconductor device
JP2914337B2 (en) Wire bonding equipment
JP3405585B2 (en) Wire bonding apparatus and wire bonding method using the same
JP3293757B2 (en) Method of manufacturing lead frame assembly for manufacturing semiconductor device
JPS5944836A (en) Wire bonding method
JPH04251948A (en) Manufacture of semiconductor
JPH10199913A (en) Wire-bonding method
JPH07263477A (en) Capillary for connecting coated bonding fine wire
JPS62108533A (en) Wire bonding method
JPS59193037A (en) Wire bonder
JPH0738398B2 (en) Wire bonding method
JPH0330345A (en) Manufacture of semiconductor device
JPH04318942A (en) Wire bonding method
JPS63138744A (en) Wire bonding
JP2000188303A (en) Ball bonding method
JPS63228724A (en) Wire bonding method