JPS59143327A - Method for removing resist film - Google Patents

Abstract

PURPOSE:To remove the resist film with stability by immersing the body to be treated comprising resist film with the solution with bubbling inert gas or dry air into acid solution so as to remove the resist film from the body to be treated. CONSTITUTION:A tank 1 of resist removing device is composed of crystal glass and the tank contains removing solution 2. At the bottom of the tank 1, a pipe 3 provided with small holes to emit N2 gas in the bubble form from the whole surface of the bottom about uniformly is arranged and it is connected to a pressure adjuster 5 through a pipe 4. A holder 6 made of crystal is arranged on the pipe 3 and it holds a substrate to be treated. The substrate comprising the resist film is immersed with the solution with bubbling inert gas or dry air into acid solution. By this method, the resist film is completely removed from the substrate to be treated.

Description

DETAILED DESCRIPTION OF THE INVENTION lal Technical Field of the Invention The present invention relates to a method for removing a resist film applied to the manufacture of semiconductor elements, masks, etc., and in particular a method for removing and removing a resist film whose operation and effect are stabilized over a long period of time. Regarding.

(bl Technology background) Microfabrication in the manufacturing process of semiconductor devices, especially integrated circuit devices, is mainly carried out by lithography.・When patterning the dimensions, a required pattern is formed using yl/yipli, l/Alt resist film on this film, and the desired film, etc. is etched using this resist film as a mask. ing.

The material currently most commonly used as a resist film is photoresist, which has the properties of being easily soluble in a solvent (positive type) or difficult to dissolve (negative type) when irradiated with light.
The properties that can form a protective film during etching are VT
Ru. Photoresists are usually commercially available in a state dissolved in an organic solvent, that is, as a photoresist solution. When a photoresist solution is applied to a substrate to be etched and the solvent is evaporated, a photoresist film is formed on the substrate. A desired pattern shape is irradiated with light (exposure) by applying light to this through an original mask (photomask) or the like. Next, appropriate portions of the photoresist are dissolved and removed. An etching process is applied to the substrate in this state, and the portion of the substrate from which the photoresist has been removed is etched. Finally, the photoresist film is peeled off and removed, and the photolithography process is completed.

Semiconductor integrated circuit devices, etc. 0) In order to cope with the demand for finer patterns, far-ultraviolet conditioning of the light irradiated onto the photoresist,! Electron beam (CEB) resists used for sub-beam exposure, X-set resists used for x-beam exposure, etc. have also been developed and are being put into practical use.

(cl) Prior Art and Problems Sulfuric acid (82804
) and hydrogen oxide water (H20x) at a ratio of about 1O:1, for example, to which the substrate is immersed. During this immersion, the temperature of the mixed solution increases by 100 degrees.

At such temperatures, H2O decomposes rapidly and forms Al2
This results in a dilution of the solution resulting in a dilution of the solution, making it necessary to convert the stripping solution at intervals of, for example, 2 hours. When storing the H,02 aqueous solution before mixing, care must be taken such as shielding from light and limiting temperature and time. is not appropriate, and H,80,and H
, 02 and a resist stripping method that has a stable effect over a long period of time is desired.

(dl) OBJECT OF THE INVENTION It is an object of the invention to provide a method for peeling and removing a resist film that can be carried out over a period of time with stable effects.

(El Structure of the Invention This Invention θ) The above object is to create a solution while bubbling an inert gas or dry air (dry C'+) in an acidic solution.
This is achieved by immersing the object to be processed having a resist film in the hot liquid and peeling off the resist film from the object to be processed. Here, inert gas or neon (
A gas selected from Ne) is applied.

G) Implementation of the Invention The present invention will be specifically described below using examples with reference to the drawings. A schematic cross-sectional view of the resist stripping apparatus used in the non-example is shown in FIG. 1. In the figure, 1 is a tank made of quartz glass, and the stripping liquid 2 is dissolved in the tank 1. However, in non-examples, stripping solution and [/ ”'C'tkK 14 N
(1) Itail for sulfur rR(IL SO,) f in 71.

In addition, the bottom 1 of the tank 1 is provided with a conduit 3 equipped with small holes for discharging nitrogen (N2) gas as bubbles almost uniformly from the entire bottom surface. N
, connected to the gas container. A substrate to be processed 7 supported by a quartz glass holder 6 is placed on the conduit 3 .

Present invention 0] Reticle mask Q as a disaster example] Resist peeling Fr: a light T. The mask flank consists of a chromium (Cr) film and a negative type synthetic rubber film on a glass substrate. 4- After the exposure, development and etching processes are completed, the resist film is removed.

The bubbles are then generated in the concentrated sulfuric acid by passing nitrogen gas through it. In this state, the mask is placed at the position of the substrate 7 to be processed. During this process, the resist film develops fine cracks and peels off from the chrome surface of the substrate. is gradually decomposed into concentrated sulfuric acid.

Peeling of the resist film like this Q] is completed in about 20 minutes.

In the above example, the negative resist is peeled off and removed from the mask.
Although this is an example to which the invention is applied, even if the substrate 7 to be processed is a semiconductor substrate, it is the same as the above example, and other resists,
For example, it can also be applied to positive type quinonediazide resists.

This is similar to the resist removal using a mixed solution with hydrogenated water, which is observed when removing the resist according to the present invention.
Acid accumulation (0,) generated by conventional decomposition of hydrogen peroxide
Q] It is determined that nitrogen bubbles, which are supplied by bubbling instead of air bubbles, are causing distortion in the resist film.

However, in IS and other conventional technologies, the decomposition of hydrogen peroxide progresses rapidly at T6, so the mixed solution can only be used for about 3 hours (on the other hand, according to the present invention, concentrated sulfuric acid is used at a temperature of 2.
Since it is stable even at temperatures around 0.000C (°C), it can be used continuously for about a week, although it depends on the amount of peeling.

Note that although concentrated sulfuric acid is used as the stripping solution in the above embodiments, other acids such as nitric acid (NHOB) can also be used.

(gl) As described in detail, according to the present invention, a stable effect can be obtained in peeling and removing the resist film, and no special care is required in managing the materials used.

Such a significant improvement in the stability of the non-basic process will greatly contribute to the production of semiconductor devices.

[Brief explanation of drawings]

FIG. 1 is a schematic sectional view of a resist stripping apparatus used in an example of the present invention, and FIG. 2 is a T-microscope photograph showing the state of a resist film during peeling in this example. In the figure, 1 is a tank, 2 is a stripping liquid, 3 is a small hole, and 1
In this conduit, 6 is a holder, and 7 is a substrate to be processed. 7- Part 1, Part 2 Ro 8- Month, Showa ■ 1. Relationship with the case indicated Address: 1015 Kami Elementary School I'll Naka (522), Nakahara-ku, Yozaki City, Kanagawa Prefecture Name: Fujitsu Co., Ltd. 4 Agent Address: Fujitsu Co., Ltd., 1015 Nakahara-ku, I-11, Nakahara-ku, Yozaki-shi, Kanagawa Prefecture (1) "2" on page 6, lines 8 to 9 of the specification As seen in the micrograph shown in the figure (400x magnification)" is deleted. (2) "Show" on page 6, line 20 of the specification of the present application is amended to "state". (3) Page 8, line 75 to 6th line 2 of the specification of the present application
"The figure is a microscopic photograph showing the state of the resist film in progress of peeling in this example" has been deleted. (4) Delete Figure 2 of the drawing. Figure 1 2-

Claims (1)

[Claims] A process for producing a resist film, which comprises bubbling an inert gas or dry air into an acidic solution, immersing a workpiece having a resist film in the solution, and peeling off the resist film from the workpiece. Removal method.