JPS59137346A - Manufacture of glass waveguide - Google Patents
Manufacture of glass waveguideInfo
- Publication number
- JPS59137346A JPS59137346A JP58010563A JP1056383A JPS59137346A JP S59137346 A JPS59137346 A JP S59137346A JP 58010563 A JP58010563 A JP 58010563A JP 1056383 A JP1056383 A JP 1056383A JP S59137346 A JPS59137346 A JP S59137346A
- Authority
- JP
- Japan
- Prior art keywords
- glass
- substrate
- quartz glass
- waveguide
- particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
- C03C17/3417—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials all coatings being oxide coatings
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Optical Integrated Circuits (AREA)
- Surface Treatment Of Glass (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は拡散によって埋め込みの低損失8次元カラス光
導波路を作製する方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of fabricating a buried low-loss eight-dimensional glass optical waveguide by diffusion.
従来のガラス導波路の拡散による作製法は、第1図(a
)に示すように、BK−7等のソーダガラス基板]の上
に、拡散源であるAgのパターン膜2を形成し、これを
第1図(b)に示すように、大気中ノ雰囲気で800〜
4100℃に加熱してAgイオンをガラス基板中に拡散
し、拡散した層8を導波路としていた。(参考文献:
G、H,0hartier 、 P。The conventional method for manufacturing glass waveguides by diffusion is shown in Figure 1 (a
), a pattern film 2 of Ag, which is a diffusion source, is formed on a soda glass substrate such as BK-7, and as shown in FIG. 800~
Ag ions were diffused into the glass substrate by heating to 4100° C., and the diffused layer 8 was used as a waveguide. (References:
G., H., Hartier, P.
Jaussaud + A、D、01iver + O
,Parriaux ” Opticalwave G
uides Publicated by E:Lec
tr:Lc FieldControlled 工o
n li:xchange in Grass
”1i:1eotron、 Lett、 Vol
、 1 4 、PP、 1 3 8〜1 34.
19781
この方法による作製方法は簡単であるが、埋め込み導波
路を実現することは不可能であるので、特にエツジに欠
けのないように、かつ1u角にM暦することは鈍しい欠
点があった。しかもクラッドが非対称になっているので
、ツCファイバとの結合損失も大きいという問題もあっ
た。Jaussaud + A, D, 01iver + O
, Parriaux ” Opticalwave G
uides Published by E:Lec
tr:Lc Field Controlled
n li:xchange in Grass
“1i:1eotron, Lett, Vol.
, 1 4 , PP, 1 3 8 - 1 34.
19781 Although this method of fabrication is simple, it is impossible to realize a buried waveguide, so it has the drawback that it is difficult to make the edges so that they are not chipped and to have a 1u angle. . Moreover, since the cladding is asymmetrical, there is also the problem that the coupling loss with the C-type fiber is large.
他の方法として、T7+イオンを含む混合塩溶液中にガ
ラス基板の片面を浸し、ガラス片面にYは極を形成し、
該混合塩溶液中に白金電極を置いて電界を印加しながら
Tノ+イオンをガラス基板中に拡散し、これを導波路と
する方法がある。(参考文献: T、Ezawa an
d H・Nakagome ” 0pticalWav
e Guicle Formed by Electr
icallyInduced Migration o
f J、ons 1nGrassP1atesAppI
−1[)hyS−Lett、VOl、211Pp−58
4〜586゜1972)
電界拡散の場合には、埋め込み導波路は可能で・あるが
、拡散工程が面倒で、大面積化が難しく、量産的でない
という欠点がある。またこの方法では拡散が極めて速い
ので、拡散の制御が鍵しく、単一モード導波路のように
、数μmのコアを得ることは不可能に近いという問題が
ある。As another method, one side of the glass substrate is immersed in a mixed salt solution containing T7+ ions, Y forms a pole on one side of the glass,
There is a method in which a platinum electrode is placed in the mixed salt solution and T+ ions are diffused into a glass substrate while applying an electric field, and this is used as a waveguide. (References: T, Ezawa an
d H. Nakagome” 0pticalWav
e Guicle Formed by Electr
ically Induced Migration o
f J, ons 1nGrassP1atesAppI
-1[)hyS-Lett, VOl, 211Pp-58
4-586° 1972) In the case of electric field diffusion, a buried waveguide is possible, but it has the drawbacks that the diffusion process is troublesome, it is difficult to enlarge the area, and it is not suitable for mass production. Furthermore, since diffusion is extremely fast in this method, control of diffusion is key, and there is a problem in that it is almost impossible to obtain a core of several μm as in a single mode waveguide.
本発明は以上の欠点を解決するためGこ、通常の熱拡散
により埋め込み形の導波路を実現することを目的とし、
屈折率を増加させる物質を、基板上に堆積した後、ガラ
ス倣粒子な透明化する過程で拡散させることを特徴とす
る。In order to solve the above-mentioned drawbacks, the present invention aims to realize a buried waveguide using ordinary thermal diffusion.
The method is characterized in that a substance that increases the refractive index is deposited on a substrate and then diffused during the process of making the glass imitation particles transparent.
第2図(a) 、(b) 、 (c)に本発明の一実施
例の工程を示す。この実施例では5j−o2石石英ガラ
ス内光導波路を作製する方法について述べる。FIGS. 2(a), (b), and (c) show the steps of an embodiment of the present invention. In this example, a method for manufacturing an optical waveguide in 5j-o2 quartz glass will be described.
第2図において、1は5108石英ガ石英ガラス内はG
e金属(拡散源)、4は8102石英ガラス粒子、5
Get拡散層、6はSiO□石英ガラス透明層である0
まずSio、石英ガラス基板1を研磨し、研磨面をフッ
化アンモニウム液で軽くエツチングした後、第2図(a
)に示すように、リフトオフ法によりバタ、−ン化した
Ge金属2の膜を電子ビーム蒸着法により単一モード用
には500人、多モード用には2000A付着する。パ
ターン形状は単一モード用のときには幅8μm1多モー
ド用のときしこは80μmであって両方とも長さ4’0
’mmである。この基板に、s iCl 4ガスを混合
したH2と02の酸水素炎内で加水熱分解反応させ、第
2図(b)に示すように、生成されたSx02石英ガラ
ス微粒子4を堆積する。In Figure 2, 1 is 5108 quartz glass and G is inside the quartz glass.
e metal (diffusion source), 4 is 8102 quartz glass particles, 5
The Get diffusion layer 6 is a SiO □ quartz glass transparent layer 0 First, the Sio, quartz glass substrate 1 is polished, and the polished surface is lightly etched with ammonium fluoride solution.
), a film of Ge metal 2, which has been turned into a butter by the lift-off method, is deposited by electron beam evaporation at a thickness of 500 for a single mode and 2000 for a multimode. The pattern shape is 8 μm in width for single mode, 80 μm in width for multimode, and 4'0 in length for both.
'mm. A hydrothermal decomposition reaction is carried out on this substrate in an oxyhydrogen flame of H2 and 02 mixed with s iCl 4 gas, and the generated Sx02 silica glass particles 4 are deposited as shown in FIG. 2(b).
Ge金属2は酸化雰囲気の昇温過程で酸化ゲルマニウム
(GeO,)に変化する。またSiO□石英ガラス微粒
子4の堆積層の厚さは単一モード用のときには200〜
300 pm、多モード用のときシこは800〜100
0μmである。堆積温度は約400°Cである。つぎに
この基板を酸化雰囲気の加熱炉シこ入れ、単一モード用
には1150℃で5時間焼鈍した後、さらに1800℃
しこ昇温して、さらに2時間焼鈍し、箋時聞〜多モード
用には1150°Cで100時間焼鈍した後、1800
℃に昇温して、さらに2時間焼鈍した。810□石英ガ
ラス微粒子4は1000℃に2時間焼鈍すれば完全に透
明化される。aeイオンは第2図(0)に示すように、
5108石英ガ石英ガラス内透明ガラス化過程で石英ガ
ラス内に、拡散し、拡散層5が石英ガラス内に埋め込め
られた導波路となる。つぎに導波路端面を研磨した0
作製した導波路特性は単一モード光ファイバで波長1.
3μmの半導体レーザ光全導入した結果、単一モード用
の場合8μm幅のパターンの近視野像は完全に単一モー
ドになっており、伝ばん損失は0.1 dB/crnで
あった。導波路5と単一モード光ファイバとの接続損失
はマツチング液を使用すると0.2dBであり、極めて
低い値を示した。Ge metal 2 changes into germanium oxide (GeO,) during the temperature rising process of the oxidizing atmosphere. In addition, the thickness of the deposited layer of SiO□ quartz glass fine particles 4 is 200~
300 pm, multi-mode timing 800-100
It is 0 μm. The deposition temperature is approximately 400°C. Next, this substrate is placed in a heating furnace in an oxidizing atmosphere, and for single mode use, it is annealed at 1150°C for 5 hours, and then further heated to 1800°C.
The temperature was raised slightly and annealed for another 2 hours, and for paper sheets to multi-modes, annealed at 1150°C for 100 hours, then 1800°C.
The temperature was raised to 0.degree. C., and annealing was further performed for 2 hours. The 810□ quartz glass fine particles 4 become completely transparent when annealed at 1000° C. for 2 hours. As shown in Figure 2 (0), the ae ion is
5108 Quartz glass diffuses into the quartz glass during the transparent vitrification process, and the diffusion layer 5 becomes a waveguide embedded in the quartz glass. Next, the end face of the waveguide was polished.The characteristics of the produced waveguide were as follows: a single mode optical fiber with a wavelength of 1.
As a result of fully introducing the 3 μm semiconductor laser beam, the near-field pattern of the 8 μm wide pattern for single mode was completely single mode, and the propagation loss was 0.1 dB/crn. The connection loss between the waveguide 5 and the single mode optical fiber was 0.2 dB when a matching liquid was used, which was an extremely low value.
なお8102石英ガ石英ガラス内の堆積法として、Ge
パターン、嘆が形成された8102石英ガ石英ガラス基
板l0〜1100℃に保持した加熱炉に設定し、5iO
7,と02の混合ガスを流しても可能である。As a deposition method in 8102 quartz glass, Ge
A 8102 quartz glass substrate with a pattern and a shape formed thereon was set in a heating furnace maintained at a temperature of 0 to 1100°C, and 5iO
It is also possible to flow a mixed gas of 7 and 02.
また拡散源としてG8以外の物質Aノ+Ti+Zr+S
b 、 Sn オよびそノ酸化物A40 、 TiO
2,Zr2O3゜8
Sb205+ SnO,! Agoも、S iog石英
ガラスが結晶化、しない条件下では拡散形光導波路の作
製は可能である。Also, as a diffusion source, substances other than G8 A+Ti+Zr+S
b, Sn oxide and oxide A40, TiO
2, Zr2O3゜8 Sb205+ SnO,! With Ago, it is also possible to fabricate a diffused optical waveguide under conditions where Siog quartz glass does not crystallize.
さらに通常の多成分系ガラスでも、基板と同じ多成分系
ガラス微粒子を堆積できれは、本発明の方法は適用でき
る。この場合、堆積するガラスは基板ガラスとほぼ同じ
熱膨張係数を有し、堆積ガラスの屈折率が基板ガラスの
屈折率より小さく、はぼ等しいことが条件となる。Furthermore, the method of the present invention can be applied to ordinary multicomponent glass as long as the same multicomponent glass particles as those on the substrate can be deposited. In this case, the conditions are that the glass to be deposited has approximately the same coefficient of thermal expansion as the substrate glass, and the refractive index of the deposited glass is smaller than, and approximately equal to, the refractive index of the substrate glass.
なお透明化過程において基板ガラスも軟化するので、基
板ガラスより軟化温度の高い材料を試料設定台として用
いなければならない。Note that since the substrate glass also softens during the transparentization process, a material with a higher softening temperature than the substrate glass must be used as the sample setting table.
以上説明したように、本発明のガラス導波路の作製法に
よれば、工程が極めて少なく、かつ量産的に埋め込みの
ガラス導波路を実現できるので、光ミキサ、光分波器時
各種の低損失、低価格な光回路へ適用できる。特に従来
不可能に近いと考えられていた拡散によるSi02石英
ガラス導波路が本発明によれば容易に作製できる利点が
ある。As explained above, according to the method for manufacturing a glass waveguide of the present invention, embedded glass waveguides can be realized in mass production with extremely few steps. , can be applied to low-cost optical circuits. In particular, the present invention has the advantage that a Si02 quartz glass waveguide by diffusion, which was conventionally thought to be nearly impossible, can be easily produced.
第1図(a) 、 (b)は従来の拡散によるガラス導
波路の作製工程図、
第2図(a) l (b) 、 (C)は本発明の一実
施例の工程図である。
1・・・ガラス基板 2・・・拡散源3.5・・
・拡散層すなわち導波路
4・・・・基板ガラスと同組戊のガラス微粒子6・・・
透明化したガラス層
特許出願人 日本電信電話公社
第2図FIGS. 1(a) and 1(b) are process diagrams for manufacturing a glass waveguide using conventional diffusion, and FIGS. 2(a), (b), and (C) are process diagrams for an embodiment of the present invention. 1... Glass substrate 2... Diffusion source 3.5...
- Diffusion layer or waveguide 4...Glass particles 6 of the same structure as the substrate glass...
Transparent glass layer patent applicant Nippon Telegraph and Telephone Corporation Figure 2
Claims (1)
望とずべき形状にパターン化した後、ガラス倣粒子をO
VD法または火炎トーチにより、該基板上に堆積し、高
温で透明ガラス化する過程で該拡散物質を拡散し、これ
を光導波路とすることを特徴とするガラス導波路の作製
法。 ム 特許請求の範囲第1項記載のガラス導波路の作製法
において、拡散物質としてGe 、 Al。 Ti 、 Z−r 、 Sb 、 Nb 、 Ta 、
Sn 、 Agおよびその酸化物であるG302+
1203. Tie□。 Zr2O3,5b205. Nb2O5,Ta205.
SnO2゜AgOを用いることを特徴とするガラス導
波路の作製法。 8、 特#’f 請求の範囲第1項記載のガラス導波路
の作製法において、拡散源が付着された8102石英ガ
ラス基板上に、3102石英ガラス導波路を形成する方
法として、5iOl、と02のガスを流し、加熱炉に置
かれた該基板上にs i、o 。 石英ガラス基板上を堆積するかもしくはH2と02の火
炎中にS IC14を流し、該基板上に8102石英ガ
ラス倣粒子を堆積し、該5i02石英ガラス倣粒子を高
温で透明化する過程で、特許請求の範囲第2項に記載さ
れた拡散物質を拡散することを特徴とするガラス導波路
の作製法。[Claims] 4. After patterning the diffusing substance into a film and desired shape on a polished glass substrate, the glass imitation particles are exposed to O.
A method for producing a glass waveguide, characterized in that the diffusion substance is deposited on the substrate by a VD method or a flame torch, and the diffusion substance is diffused in the process of being made into transparent glass at high temperature, thereby forming an optical waveguide. In the method for manufacturing a glass waveguide according to claim 1, Ge or Al is used as the diffusing substance. Ti, Z-r, Sb, Nb, Ta,
Sn, Ag and its oxide G302+
1203. Tie□. Zr2O3,5b205. Nb2O5, Ta205.
A method for manufacturing a glass waveguide characterized by using SnO2°AgO. 8. Feature #'f In the method for manufacturing a glass waveguide according to claim 1, a method for forming a 3102 quartz glass waveguide on an 8102 quartz glass substrate to which a diffusion source is attached includes 5iOl and 02 s i,o onto the substrate placed in a heating furnace. In the process of depositing on a quartz glass substrate or flowing SIC14 into a H2 and 02 flame, depositing 8102 quartz glass imitation particles on the substrate, and making the 5i02 quartz glass imitation particles transparent at high temperature, the patent A method for producing a glass waveguide, comprising diffusing the diffusing substance according to claim 2.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58010563A JPS59137346A (en) | 1983-01-27 | 1983-01-27 | Manufacture of glass waveguide |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58010563A JPS59137346A (en) | 1983-01-27 | 1983-01-27 | Manufacture of glass waveguide |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59137346A true JPS59137346A (en) | 1984-08-07 |
JPS6365619B2 JPS6365619B2 (en) | 1988-12-16 |
Family
ID=11753707
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58010563A Granted JPS59137346A (en) | 1983-01-27 | 1983-01-27 | Manufacture of glass waveguide |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59137346A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61134730A (en) * | 1984-12-06 | 1986-06-21 | Nec Corp | Production of optical control element |
JPS62217206A (en) * | 1986-03-19 | 1987-09-24 | Sumitomo Electric Ind Ltd | Production of optical waveguide |
WO2000046618A1 (en) * | 1999-02-05 | 2000-08-10 | The University Court Of The University Of Glasgow | Waveguide for an optical circuit and method of fabrication thereof |
WO2012027987A1 (en) * | 2010-09-01 | 2012-03-08 | 北京大学 | Surface treatment method for germanium-based part |
-
1983
- 1983-01-27 JP JP58010563A patent/JPS59137346A/en active Granted
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61134730A (en) * | 1984-12-06 | 1986-06-21 | Nec Corp | Production of optical control element |
JPH0644086B2 (en) * | 1984-12-06 | 1994-06-08 | 日本電気株式会社 | Method of manufacturing light control element |
JPS62217206A (en) * | 1986-03-19 | 1987-09-24 | Sumitomo Electric Ind Ltd | Production of optical waveguide |
WO2000046618A1 (en) * | 1999-02-05 | 2000-08-10 | The University Court Of The University Of Glasgow | Waveguide for an optical circuit and method of fabrication thereof |
GB2362963A (en) * | 1999-02-05 | 2001-12-05 | Univ Glasgow | Waveguide for an optical circuit and method of fabrication thereof |
GB2362963B (en) * | 1999-02-05 | 2003-03-12 | Univ Glasgow | Waveguide for an optical circuit and method of fabrication thereof |
US6735370B1 (en) | 1999-02-05 | 2004-05-11 | The University Court Of The University Of Glasgow | Waveguide for an optical circuit and method of fabrication thereof |
WO2012027987A1 (en) * | 2010-09-01 | 2012-03-08 | 北京大学 | Surface treatment method for germanium-based part |
Also Published As
Publication number | Publication date |
---|---|
JPS6365619B2 (en) | 1988-12-16 |
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