JPS59136981A - 半導体受光装置 - Google Patents

半導体受光装置

Info

Publication number
JPS59136981A
JPS59136981A JP58011704A JP1170483A JPS59136981A JP S59136981 A JPS59136981 A JP S59136981A JP 58011704 A JP58011704 A JP 58011704A JP 1170483 A JP1170483 A JP 1170483A JP S59136981 A JPS59136981 A JP S59136981A
Authority
JP
Japan
Prior art keywords
type
layer
inp
substrate
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58011704A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0437591B2 (enrdf_load_stackoverflow
Inventor
Kazuto Yasuda
和人 安田
Takao Kaneda
隆夫 金田
Takashi Mikawa
孝 三川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58011704A priority Critical patent/JPS59136981A/ja
Publication of JPS59136981A publication Critical patent/JPS59136981A/ja
Publication of JPH0437591B2 publication Critical patent/JPH0437591B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction

Landscapes

  • Light Receiving Elements (AREA)
JP58011704A 1983-01-27 1983-01-27 半導体受光装置 Granted JPS59136981A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58011704A JPS59136981A (ja) 1983-01-27 1983-01-27 半導体受光装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58011704A JPS59136981A (ja) 1983-01-27 1983-01-27 半導体受光装置

Publications (2)

Publication Number Publication Date
JPS59136981A true JPS59136981A (ja) 1984-08-06
JPH0437591B2 JPH0437591B2 (enrdf_load_stackoverflow) 1992-06-19

Family

ID=11785428

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58011704A Granted JPS59136981A (ja) 1983-01-27 1983-01-27 半導体受光装置

Country Status (1)

Country Link
JP (1) JPS59136981A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61154085A (ja) * 1984-12-26 1986-07-12 Fujitsu Ltd 半導体受光装置
US4775876A (en) * 1987-09-08 1988-10-04 Motorola Inc. Photon recycling light emitting diode
JPH02137376A (ja) * 1988-11-18 1990-05-25 Nec Corp アバランシェフォトダイオード
US4974061A (en) * 1987-08-19 1990-11-27 Nec Corporation Planar type heterostructure avalanche photodiode

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61154085A (ja) * 1984-12-26 1986-07-12 Fujitsu Ltd 半導体受光装置
US4974061A (en) * 1987-08-19 1990-11-27 Nec Corporation Planar type heterostructure avalanche photodiode
US4775876A (en) * 1987-09-08 1988-10-04 Motorola Inc. Photon recycling light emitting diode
JPH02137376A (ja) * 1988-11-18 1990-05-25 Nec Corp アバランシェフォトダイオード

Also Published As

Publication number Publication date
JPH0437591B2 (enrdf_load_stackoverflow) 1992-06-19

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