JPS59132491A - センスアンプ - Google Patents
センスアンプInfo
- Publication number
- JPS59132491A JPS59132491A JP58195990A JP19599083A JPS59132491A JP S59132491 A JPS59132491 A JP S59132491A JP 58195990 A JP58195990 A JP 58195990A JP 19599083 A JP19599083 A JP 19599083A JP S59132491 A JPS59132491 A JP S59132491A
- Authority
- JP
- Japan
- Prior art keywords
- fet
- fets
- gate
- load
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Amplifiers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58195990A JPS59132491A (ja) | 1983-10-21 | 1983-10-21 | センスアンプ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58195990A JPS59132491A (ja) | 1983-10-21 | 1983-10-21 | センスアンプ |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51126092A Division JPS5946078B2 (ja) | 1976-10-22 | 1976-10-22 | センスアンプ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59132491A true JPS59132491A (ja) | 1984-07-30 |
JPS616473B2 JPS616473B2 (enrdf_load_stackoverflow) | 1986-02-26 |
Family
ID=16350378
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58195990A Granted JPS59132491A (ja) | 1983-10-21 | 1983-10-21 | センスアンプ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59132491A (enrdf_load_stackoverflow) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4858195A (en) * | 1986-05-22 | 1989-08-15 | Sony Corporation | Bit line charge sensing apparatus having CMOS threshold voltage compensation |
KR960015585A (ko) * | 1994-10-11 | 1996-05-22 | 로버트 시. 콜웰 | 감도 증폭기 |
JPH0998035A (ja) * | 1995-09-29 | 1997-04-08 | Nec Corp | 電流差動増幅回路 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6455173U (enrdf_load_stackoverflow) * | 1987-10-01 | 1989-04-05 |
-
1983
- 1983-10-21 JP JP58195990A patent/JPS59132491A/ja active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4858195A (en) * | 1986-05-22 | 1989-08-15 | Sony Corporation | Bit line charge sensing apparatus having CMOS threshold voltage compensation |
KR960015585A (ko) * | 1994-10-11 | 1996-05-22 | 로버트 시. 콜웰 | 감도 증폭기 |
JPH0998035A (ja) * | 1995-09-29 | 1997-04-08 | Nec Corp | 電流差動増幅回路 |
US5821792A (en) * | 1995-09-29 | 1998-10-13 | Nec Corporation | Current differential amplifier circuit |
Also Published As
Publication number | Publication date |
---|---|
JPS616473B2 (enrdf_load_stackoverflow) | 1986-02-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4161040A (en) | Data-in amplifier for an MISFET memory device having a clamped output except during the write operation | |
US4475178A (en) | Semiconductor regeneration/precharge device | |
JPS5916350B2 (ja) | 2進信号用再生回路 | |
JPS5914827B2 (ja) | アドレス選択システム | |
US5148399A (en) | Sense amplifier circuitry selectively separable from bit lines for dynamic random access memory | |
JPS5922316B2 (ja) | ダイナミツクメモリ装置 | |
JPS62212997A (ja) | 半導体集積回路装置 | |
US6452833B2 (en) | Semiconductor memory device | |
US6707703B2 (en) | Negative voltage generating circuit | |
JPH02246089A (ja) | 半導体集積回路 | |
US5208771A (en) | Semiconductor memory apparatus | |
JPS59132491A (ja) | センスアンプ | |
JPS592118B2 (ja) | 増巾回路 | |
US5274592A (en) | Semiconductor integrated circuit device for high-speed transmission of data and for improving reliability of transfer transistor, applicable to DRAM with voltage-raised word lines | |
KR100244666B1 (ko) | 감지 증폭기 구동 회로 | |
JPS6239912A (ja) | Mosブ−トストラツプ・ドライバ回路 | |
JPS5856194B2 (ja) | 半導体記憶装置 | |
JPH0217872B2 (enrdf_load_stackoverflow) | ||
US4794569A (en) | Semiconductor memory having a barrier transistor between a bit line and a sensing amplifier | |
JPS6284487A (ja) | 差動増幅器 | |
JPS6149760B2 (enrdf_load_stackoverflow) | ||
JPH1011977A (ja) | 半導体記憶装置 | |
JPH029084A (ja) | ダイナミックram | |
KR930003253B1 (ko) | 워드선 구동신호 발생회로 | |
JPS5946078B2 (ja) | センスアンプ |