JPS59132146A - Packaging method of semiconductor device - Google Patents
Packaging method of semiconductor deviceInfo
- Publication number
- JPS59132146A JPS59132146A JP58006412A JP641283A JPS59132146A JP S59132146 A JPS59132146 A JP S59132146A JP 58006412 A JP58006412 A JP 58006412A JP 641283 A JP641283 A JP 641283A JP S59132146 A JPS59132146 A JP S59132146A
- Authority
- JP
- Japan
- Prior art keywords
- melting point
- glass
- low melting
- plate
- point glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 11
- 238000000034 method Methods 0.000 title claims description 10
- 238000004806 packaging method and process Methods 0.000 title claims description 10
- 239000011521 glass Substances 0.000 claims abstract description 37
- 238000002844 melting Methods 0.000 claims abstract description 21
- 230000008018 melting Effects 0.000 claims abstract description 18
- 239000000919 ceramic Substances 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
- 239000000843 powder Substances 0.000 abstract description 12
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は半導体装置のパッケージング方法の改良に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to improvements in packaging methods for semiconductor devices.
従来、半導体装置例えば固体イメージセンサのパッケー
ジングは、第１図に示す如く、表面の開口部１の底部に
チップ２をセットしたパッケージ本体３の開口周縁部５
の表面に、該周縁部５に対応する裏面外縁に低融点ガラ
ス６の粉床を塗布したガラス板７を載置するかあるいは
前記パッケージ本体３の開口周縁部５表面に予め低融点
ガラス６の粉床を塗布してガラス板７を載置させた後、
低融点ガラス６の軟化温度以上に加熱して圧着すること
により行なっていた。Conventionally, as shown in FIG. 1, packaging of a semiconductor device, such as a solid-state image sensor, is performed using an opening periphery 5 of a package body 3 in which a chip 2 is set at the bottom of an opening 1 on the front surface.
A glass plate 7 is placed on the outer edge of the back surface corresponding to the peripheral edge 5, or a powder bed of low melting glass 6 is applied to the surface of the opening peripheral edge 5 of the package body 3 in advance. After applying the powder bed and placing the glass plate 7,
This was done by heating the low-melting point glass 6 to a temperature higher than its softening temperature and pressing it.
ところで、前述したパッケージングにおいて、低融点ガ
ラス６をガラス板２の裏面あるいはパッケージ本体３の
開口周縁部５表面に塗布するには一般にシルク印刷によ
シ行なっている。しかしながら、印刷時に低融点ガラス
６の粉床が一ガラス板７の裏面中央付近に飛び散ったシ
、パッケージ本体３の開口部１内のチップ２部分に飛び
散ったシしてその部分で固着する事態が生じる。したが
って、ガラス板７やパッケージ本体３が不良品となシ、
歩留りが悪くなる。また、低融点ガラス６め粉床の飛散
を検査するために検査員を要する。このようなことから
、制品のコスト高を招くという欠点があった。By the way, in the above-mentioned packaging, silk printing is generally used to apply the low melting point glass 6 to the back surface of the glass plate 2 or the surface of the opening peripheral portion 5 of the package body 3. However, during printing, the powder of the low melting point glass 6 is scattered near the center of the back surface of the glass plate 7, and the chip 2 inside the opening 1 of the package body 3 is scattered and stuck there. arise. Therefore, if the glass plate 7 or the package body 3 is defective,
Yield deteriorates. Additionally, an inspector is required to inspect the low melting point glass powder bed for scattering. For this reason, there is a drawback that the cost of the product increases.
本発明は上記事情に鑑みてなされたもので、コスト低減
を達成し得る半導体装置のパッケージング方法を提供す
ることを目的とするものである。The present invention has been made in view of the above circumstances, and it is an object of the present invention to provide a packaging method for semiconductor devices that can achieve cost reduction.
本発明は、表面の開口部底面に半導体素子をセットした
バッケッジ本体と、このパッケージ−本体の開口周縁に
配置される光入射又は、光放射を行なうための透明板と
の間に、表裏に低融点ガラス材料を塗布しかつ外形が前
記開口部よシ大きい枠状板を配置した後、熱圧着を行な
うことによって、従来の如く低融点ガラスの粉床の飛散
に起因する歩留シの低下を阻止し、コスト低減を達成で
きるものである。The present invention provides a package body in which a semiconductor element is set at the bottom of an opening on the front surface, and a transparent plate for light input or light emission disposed around the opening of the package body. After applying a melting point glass material and arranging a frame-shaped plate whose outer shape is larger than the opening, thermocompression bonding is performed to prevent a decrease in yield due to scattering of a powder bed of low melting point glass as in the conventional method. It is possible to prevent this and achieve cost reduction.
以下、本発明を第２図（ａｉｒ、 （ｂ）を参照して説
明する。Hereinafter, the present invention will be explained with reference to FIG. 2 (air, (b)).
捷ず、第２図（、）に示す如く、予め表裏全面に低融点
ガラス１ノの粉床の塗布がなされ外形が後記開口部よシ
大きい枠状のセラミックス板（枠状板）ｉ２を用意し、
つづいて表面の開孔部１３底部に例えばＣＣＤイメージ
センサのチップ１４を有するパッケージ本体１５と、外
形が前記セラミックス板１２と同じ大きさの光入射ゞ窒
放射を行なうガラ−板（透明板）、６間に前記セラミッ
クス板１２を配置した後、これらを同図（ｂ）に示す如
く順次重ね合わせ、反応炉内で低融点ガラスの軟化温度
以上に熱圧着して封止した。As shown in Fig. 2 (,), a frame-shaped ceramic plate (frame-shaped plate) i2 is prepared in which a powder bed of low-melting glass 1 is coated on the entire front and back surfaces and whose external shape is larger than the opening described later. death,
Next, a package main body 15 having a chip 14 of, for example, a CCD image sensor at the bottom of the opening 13 on the surface, a glass plate (transparent plate) having the same size as the ceramic plate 12 for light input and emission; After arranging the ceramic plates 12 between the ceramic plates 12 and 6, they were sequentially stacked on top of each other as shown in FIG.
しかして、本発明によれば、低融点ガラス１１の粉床を
予め枠状のセラミックス板１２の表裏に塗布するため、
従来の如くパッケージ本体の枠状部やガラス板への低融
点ガラスの塗布に伴って低融点ガラスの粉床がチップ部
分やガラス板の裏面中央付近に飛散、固着することを回
避できる。したがって、パッケージ本体１５やガラス板
１６の歩留シは１００チとなる。咬た、本発明の場合セ
ラミックス板の表裏に低融点ガラスを塗布するが、この
塗布に要するコストは従来の場合と比べ数分の１以下と
なる。更に、前述したようにチップ部分やガラス分への
低融点ガラスの粉床の飛散、固着を回避できるため、従
来の如き検査工程が不要である。以上より、コストの低
減化を達成できる。According to the present invention, since the powder bed of the low melting point glass 11 is applied in advance to the front and back sides of the frame-shaped ceramic plate 12,
It is possible to avoid scattering and sticking of a powder bed of low melting point glass to the chip portion or near the center of the back surface of the glass plate, which is caused by applying low melting point glass to the frame portion of the package body or the glass plate as in the conventional case. Therefore, the yield of the package body 15 and the glass plate 16 is 100 pieces. Furthermore, in the case of the present invention, low melting point glass is coated on the front and back surfaces of the ceramic plate, and the cost required for this coating is less than a fraction of that in the conventional case. Furthermore, as described above, scattering and adhesion of the powder bed of low melting point glass to the chip portion and the glass portion can be avoided, so that the conventional inspection process is not necessary. From the above, cost reduction can be achieved.
なお、上記実施例では透明板の材質としてガラスを用い
たが、これに限らず、サファイアまたけ石英を用いても
よい。Although glass is used as the material of the transparent plate in the above embodiment, the material is not limited to this, and sapphire-covered quartz may also be used.
上記実施例では枠状板の拐質としてセラミックスを用い
たが、これに限らず金属を用いてもよい。また、上記実
施例では枠状板の表裏全面に低融点ガラスを塗布したが
、これに限らず、枠に沼って断続的に塗布してもよい。In the above embodiment, ceramics are used as the material for the frame-like plate, but the material is not limited to this, and metal may also be used. Further, in the above embodiment, the low melting point glass was applied to the entire front and back surfaces of the frame-shaped plate, but the application is not limited to this, and the glass may be applied intermittently over the frame.
上記実施例では低融点ガラスの加熱に際し反応炉を用い
たが、とれに限らず例えばレーザ光を照射してもよい。In the above embodiments, a reaction furnace was used to heat the low-melting point glass, but the method is not limited to this, and for example, laser light may be irradiated.
上記実施例では半導体素子としてＣＣＤイメージセンサ
のチップを用いたが、これに限らず、他の固体イメージ
センサのチップにも同様に適用できる。In the above embodiment, a CCD image sensor chip is used as the semiconductor element, but the present invention is not limited to this and can be similarly applied to other solid-state image sensor chips.
以上詳述した如く本発明によれば、低コスト化を達成し
得るＣＣＤイメージセンサ等の半導体装置のパッケージ
ングの方法を提供できるものである。As described in detail above, according to the present invention, it is possible to provide a method for packaging semiconductor devices such as CCD image sensors, which can achieve cost reduction.
□ 第１図は従来の固体イメージセンサの断面図、第
ｍ本、１゜実イ例、お、、、６□体イ、−。
センサのパッケージング方法を工程順に示す断面図であ
る。
１１・・・低融点ガラス、１２・・・枠状のセラミック
ス板、（枠状板）、１３・・・開口部、１４・・・チッ
プ、１５・・・パッケージ本体、１６・・・ガラス板（
“透明板）。
第１図
ｉ３ １４ １５
２３１−□ Fig. 1 is a cross-sectional view of a conventional solid-state image sensor, m-th book, 1゜actual example, 〇, 〇, 6□body □-. FIG. 3 is a cross-sectional view showing the sensor packaging method in the order of steps. DESCRIPTION OF SYMBOLS 11... Low melting point glass, 12... Frame-shaped ceramic plate, (frame-shaped plate), 13... Opening, 14... Chip, 15... Package body, 16... Glass plate (
“Transparent plate). Figure 1 i3 14 15 231-
Claims (3)
ケージ本体と、このパッケージ本体の開口−周縁に配置
される光入射又は光放射を行なうための透明板との間に
、表裏に低融点ガラス材料が塗布されかつ外形が前記開
口部よシ大きい枠状板を配置した後、熱圧着を行なうこ
とを特徴とする半導体装置のパッケージング方法。(1) Between the package body with the semiconductor element set at the bottom of the opening on the front surface and a transparent plate for light input or light emission placed around the opening of this package body, there is a low melting point glass on the front and back sides. 1. A method of packaging a semiconductor device, which comprises arranging a frame-like plate coated with a material and having an outer shape larger than the opening, and then performing thermocompression bonding.
あることを特徴とする特許請求の範囲第１項記載の半導
体装置のパッケージング方法。(2) The method for packaging a semiconductor device according to claim 1, wherein the material of the transparent plate is quartz, sapphire, or glass.
分が、金属もしくはセラミックスからなることを特徴と
する特許請求の範囲第１項記載の半導体装置のパッケー
ジング方法。(3) The method of packaging a semiconductor device according to claim 1, wherein the transparent plate and the package body portion in contact with the transparent plate are made of metal or ceramics.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58006412A JPS59132146A (en) | 1983-01-18 | 1983-01-18 | Packaging method of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58006412A JPS59132146A (en) | 1983-01-18 | 1983-01-18 | Packaging method of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59132146A true JPS59132146A (en) | 1984-07-30 |
Family
ID=11637648
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58006412A Pending JPS59132146A (en) | 1983-01-18 | 1983-01-18 | Packaging method of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59132146A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6413736U (en) * | 1987-07-17 | 1989-01-24 | ||
| JPH01277068A (en) * | 1988-04-28 | 1989-11-07 | Toppan Printing Co Ltd | Method and jig for sticking window glass of solid-state image pickup device |
-
1983
- 1983-01-18 JP JP58006412A patent/JPS59132146A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6413736U (en) * | 1987-07-17 | 1989-01-24 | ||
| JPH01277068A (en) * | 1988-04-28 | 1989-11-07 | Toppan Printing Co Ltd | Method and jig for sticking window glass of solid-state image pickup device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2017076361A1 (en) | Smd quartz crystal resonator and complete board package machining process therefor | |
| TWI597786B (en) | Semiconductor package structure and manufacturing method thereof | |
| JPS59132146A (en) | Packaging method of semiconductor device | |
| JPH03151666A (en) | Manufacture of solid image-pickup device | |
| TW200812021A (en) | Packaging substrate board and manufacturing method thereof | |
| JPH04164841A (en) | Anodic connection method | |
| JPH027453A (en) | Glass cap method | |
| JPH10340914A (en) | Manufacture of semiconductor device | |
| TW200836315A (en) | Electronic package structure and method thereof | |
| JPH0620627A (en) | Fluorescent character display tube | |
| JPH0758134A (en) | Semiconductor device and device and method for mounting same | |
| JPS6136969A (en) | Semiconductor solid-state image pickup device | |
| JPH04301879A (en) | Display panel and its production | |
| JPH06118434A (en) | Packaging method for driving ic of liquid crystal display panel | |
| JPH04342940A (en) | Vacuum envelope | |
| JPH0779110B2 (en) | Anodic bonding method of silicon wafer and glass substrate | |
| JPH01130547A (en) | Manufacture of semiconductor device | |
| JPH01130548A (en) | Semiconductor device | |
| JPH03187234A (en) | Manufacture of semiconductor device | |
| JPH03195065A (en) | Solid state image pickup device | |
| TWI229925B (en) | Package structure of photosensitive chip and method thereof | |
| JPS61129914A (en) | Production of flat package | |
| JPH0518461B2 (en) | ||
| JPH0731542Y2 (en) | Bonding tools | |
| JPH0376025B2 (en) |