JPS59129282A - Heat-resistant adhesive sheet - Google Patents
Heat-resistant adhesive sheetInfo
- Publication number
- JPS59129282A JPS59129282A JP331483A JP331483A JPS59129282A JP S59129282 A JPS59129282 A JP S59129282A JP 331483 A JP331483 A JP 331483A JP 331483 A JP331483 A JP 331483A JP S59129282 A JPS59129282 A JP S59129282A
- Authority
- JP
- Japan
- Prior art keywords
- adhesive sheet
- heat
- semiconductor circuit
- film
- alpha
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は高集積度半導体回路の表面上に貼り合わせて用
いられる耐熱性接着シートに関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a heat-resistant adhesive sheet that is used by being laminated onto the surface of a highly integrated semiconductor circuit.
近年、半導体回路の高集積度化に伴いその封止拐料等に
含まれている微量の放射性物質であるじ(ウラン)、T
h(トリウム)などからα線が放出され、これが半導体
メモリーに一過性の誤動作を発生させている。現在、こ
のα線から半導体回路を採掘する方法としてはポリイミ
ド系、シリコーン系等の耐熱性樹脂塗料を溶液状態で半
導体回路上にコーティングする、いわゆる溶液式若しく
は湿式と呼ばれる手段が一般に用いられている。In recent years, as semiconductor circuits have become more highly integrated, small amounts of radioactive substances such as uranium and T are contained in their sealants.
Alpha rays are emitted from thorium (h), which causes temporary malfunctions in semiconductor memories. Currently, as a method for mining semiconductor circuits from this alpha ray, a method called a so-called solution method or wet method is generally used, in which heat-resistant resin paint such as polyimide-based or silicone-based paint is coated on the semiconductor circuit in a solution state. .
しかし、この方法の場合、溶液状の塗料をコーティング
した後硬化のだめの温度と時間が必要であり、このこと
が半導体製造の生産性を著しく低下させる原因ともなっ
ている。オだ、得られた樹脂膜は第1図のごとく、その
厚さに於いて著しく均一性を欠くものでしかない。However, this method requires temperature and time for curing after coating with a solution paint, which is also a cause of a significant decrease in productivity in semiconductor manufacturing. However, as shown in FIG. 1, the resulting resin film is extremely inconsistent in thickness.
図中1は半導体チノグ、2はコーティングによって得ら
れたα線遮蔽膜である。ここに於いて半導体上に設けら
れた樹脂膜の厚さとα線遮蔽効果については、第2図の
よう密接な比例関係がある。In the figure, 1 is a semiconductor chinograph, and 2 is an α-ray shielding film obtained by coating. Here, there is a close proportional relationship between the thickness of the resin film provided on the semiconductor and the α-ray shielding effect, as shown in FIG.
すなわち、α線を遮蔽するためには30μ痛以上好まし
くは75μ痛以上の膜厚が必要であシ、第1図に於ける
a部及び0部にこの厚さを設けるためにはb部にその数
倍の厚みを設定しなければならない。まだ、このように
厚いコーティングを行った場合に発生する問題として第
3図に示す樹脂塗料の゛ダレ”がある。第3図に於ける
d部及びe部がそれであり、この問題はその後に行われ
る加熱硬化の工程に於いて起こる樹脂塗料の粘度低下現
象によって、更、に増長される結果となる。That is, in order to shield alpha rays, a film thickness of 30μ or more, preferably 75μ or more is required, and in order to provide this thickness at parts a and 0 in FIG. The thickness must be set several times that amount. Still, there is a problem that occurs when such a thick coating is applied, as shown in Figure 3, "sagging" of the resin paint.This is the case in parts d and e in Figure 3, and this problem will be solved later. The viscosity of the resin paint decreases during the heat curing process, which results in a further increase in the viscosity of the resin paint.
本発明は以上の事柄に鑑みてなされたもので、コーティ
ングでなく接着シートによる乾式のα線遮蔽膜を提供す
るものである。The present invention has been made in view of the above circumstances, and provides a dry α-ray shielding film using an adhesive sheet instead of a coating.
すなわち、本発明はポリイミドフィルム基村上にシリコ
ーン接着剤層を設けた厚さ合計が少なくとも30μ乳以
上の複合体であることを特徴とする高集積度半導体回路
の表面上に貼り合わせて用いられる耐熱性接着シートに
あるっ
以下図面に従って本発明の詳細な説明する。That is, the present invention provides a heat-resistant composite material having a total thickness of at least 30 microns or more, which is a composite material in which a silicone adhesive layer is provided on a polyimide film base layer, and is used by laminating it on the surface of a highly integrated semiconductor circuit. The present invention will be described in detail below with reference to the drawings.
第4図は本発明による耐熱性接着シートを半導体チップ
上に貼り合わせた断面図であり、図中10はポリイミド
フィルム基材、2oはシリコーン接着剤層、30は半導
体チップをそれぞれ表わす。FIG. 4 is a cross-sectional view of a heat-resistant adhesive sheet according to the present invention laminated onto a semiconductor chip, in which 10 represents a polyimide film base material, 2o represents a silicone adhesive layer, and 30 represents a semiconductor chip.
第5図は本発明の接着シートを貼9合わせた平面図でア
シ、図中50は本発明による接着シート、30は半導体
チップを表わす。FIG. 5 is a plan view of 9 adhesive sheets of the present invention pasted together. In the figure, 50 represents the adhesive sheet of the present invention, and 30 represents a semiconductor chip.
本発明の接着シートによれば半導体の必要部分にのみα
線遮蔽膜を設けることができ、寸だ半導体の製造工程内
に於ける回路形成後からパッケージング前までなら、ど
の工程ででも該接着シートを貼り付けることが可能であ
る。According to the adhesive sheet of the present invention, α can be applied only to the necessary parts of the semiconductor.
A line shielding film can be provided, and the adhesive sheet can be attached at any step in the semiconductor manufacturing process from after circuit formation to before packaging.
また、前述した湿式法のように遮蔽膜の”厚さむら″及
び樹脂塗料の”だれ”の問題もなく該遮蔽膜の硬化に要
する加熱工程及びその所要時間も一切不要である。In addition, there is no problem of "thickness unevenness" of the shielding film and "sagging" of the resin paint as in the above-mentioned wet method, and there is no need for the heating process and the time required for curing the shielding film.
へ
さらに本発明になるポリイミドフィルも基材とノリコー
ン接着剤の複合体は、耐熱性およびα線防止効果がすぐ
れているだけでなく加工性も良好であるなどきわめて実
用性に富んでいる。Furthermore, the composite of the polyimide fill base material and the Noricone adhesive according to the present invention not only has excellent heat resistance and α-ray prevention effect, but also has good processability and is extremely practical.
第1図は半導体チップ上に設けられた従来のα線遮蔽膜
(層)の概略側面図、第2図はα線遮蔽膜の膜厚とα線
透過量との関係図、第3図は従来のα線遮蔽膜形成時の
欠点説明図、第4図は本発明のα線m蔽用耐熱性接着シ
ートを半導体チップ上に設けた場合の概略断面図、第5
図はその平面図である。
1.30・・・半導体チップ、2・・・コーティングに
よって設けられたα線遮蔽膜、10・・・ポリイミドフ
ィルム基材、20・・・シリコーン接着剤層。
特許出願人
株式会社巴川製紙所
第11刀
第21」
第+14
ぐn
第ダ17Figure 1 is a schematic side view of a conventional α-ray shielding film (layer) provided on a semiconductor chip, Figure 2 is a relationship between the thickness of the α-ray shielding film and the amount of α-ray transmission, and Figure 3 is a diagram showing the relationship between the thickness of the α-ray shielding film and the amount of α-ray transmission. FIG. 4 is a schematic cross-sectional view of the case where the heat-resistant adhesive sheet for α-ray shielding of the present invention is provided on a semiconductor chip; FIG.
The figure is a plan view thereof. 1.30...Semiconductor chip, 2...α-ray shielding film provided by coating, 10...Polyimide film base material, 20...Silicone adhesive layer. Patent Applicant Tomoekawa Paper Mills Co., Ltd. No. 11 Sword No. 21” No. +14 Gun No. Da 17
Claims (1)
た厚さ合計が少なくとも30μみ以上の複合体であると
七を特徴とする高集積度半導体回路の表面上に貼り合わ
せて用いられる耐熱性接着シート。7. A heat-resistant adhesive sheet used by laminating onto the surface of a highly integrated semiconductor circuit, characterized in that it is a composite material having a silicone adhesive layer on a polyimide film base material and having a total thickness of at least 30 μm. .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP331483A JPS59129282A (en) | 1983-01-14 | 1983-01-14 | Heat-resistant adhesive sheet |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP331483A JPS59129282A (en) | 1983-01-14 | 1983-01-14 | Heat-resistant adhesive sheet |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS59129282A true JPS59129282A (en) | 1984-07-25 |
Family
ID=11553891
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP331483A Pending JPS59129282A (en) | 1983-01-14 | 1983-01-14 | Heat-resistant adhesive sheet |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59129282A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104629640A (en) * | 2015-02-13 | 2015-05-20 | 厦门新旺新材料科技有限公司 | High temperature resistant release adhesive tape as well as preparation method and use of adhesive tape |
-
1983
- 1983-01-14 JP JP331483A patent/JPS59129282A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104629640A (en) * | 2015-02-13 | 2015-05-20 | 厦门新旺新材料科技有限公司 | High temperature resistant release adhesive tape as well as preparation method and use of adhesive tape |
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