JPS59127833A - 励起気相析出法による薄膜の製造装置 - Google Patents
励起気相析出法による薄膜の製造装置Info
- Publication number
- JPS59127833A JPS59127833A JP58003264A JP326483A JPS59127833A JP S59127833 A JPS59127833 A JP S59127833A JP 58003264 A JP58003264 A JP 58003264A JP 326483 A JP326483 A JP 326483A JP S59127833 A JPS59127833 A JP S59127833A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- gas
- reaction tank
- reaction
- reaction gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H10P14/3411—
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
-
- H10P14/24—
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58003264A JPS59127833A (ja) | 1983-01-12 | 1983-01-12 | 励起気相析出法による薄膜の製造装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58003264A JPS59127833A (ja) | 1983-01-12 | 1983-01-12 | 励起気相析出法による薄膜の製造装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15487989A Division JPH0637705B2 (ja) | 1989-06-16 | 1989-06-16 | 直接励起気相析出法による薄膜の製造装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59127833A true JPS59127833A (ja) | 1984-07-23 |
| JPH0419702B2 JPH0419702B2 (cg-RX-API-DMAC10.html) | 1992-03-31 |
Family
ID=11552601
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58003264A Granted JPS59127833A (ja) | 1983-01-12 | 1983-01-12 | 励起気相析出法による薄膜の製造装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59127833A (cg-RX-API-DMAC10.html) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59218721A (ja) * | 1983-05-27 | 1984-12-10 | Ushio Inc | 被膜形成方法 |
| US5007374A (en) * | 1988-03-22 | 1991-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus for forming thin films in quantity |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50130369A (cg-RX-API-DMAC10.html) * | 1974-04-01 | 1975-10-15 | ||
| JPS56124229A (en) * | 1980-03-05 | 1981-09-29 | Matsushita Electric Ind Co Ltd | Manufacture of thin film |
| JPS57202740A (en) * | 1981-06-05 | 1982-12-11 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
-
1983
- 1983-01-12 JP JP58003264A patent/JPS59127833A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50130369A (cg-RX-API-DMAC10.html) * | 1974-04-01 | 1975-10-15 | ||
| JPS56124229A (en) * | 1980-03-05 | 1981-09-29 | Matsushita Electric Ind Co Ltd | Manufacture of thin film |
| JPS57202740A (en) * | 1981-06-05 | 1982-12-11 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59218721A (ja) * | 1983-05-27 | 1984-12-10 | Ushio Inc | 被膜形成方法 |
| US5007374A (en) * | 1988-03-22 | 1991-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus for forming thin films in quantity |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0419702B2 (cg-RX-API-DMAC10.html) | 1992-03-31 |
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