JPS59121696A - 不揮発性半導体メモリ - Google Patents

不揮発性半導体メモリ

Info

Publication number
JPS59121696A
JPS59121696A JP57227760A JP22776082A JPS59121696A JP S59121696 A JPS59121696 A JP S59121696A JP 57227760 A JP57227760 A JP 57227760A JP 22776082 A JP22776082 A JP 22776082A JP S59121696 A JPS59121696 A JP S59121696A
Authority
JP
Japan
Prior art keywords
writing
memory cell
data
threshold
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57227760A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0547920B2 (de
Inventor
Hideki Sumihara
住原　英樹
Hiroshi Iwahashi
岩橋　弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP57227760A priority Critical patent/JPS59121696A/ja
Publication of JPS59121696A publication Critical patent/JPS59121696A/ja
Publication of JPH0547920B2 publication Critical patent/JPH0547920B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards

Landscapes

  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
JP57227760A 1982-12-28 1982-12-28 不揮発性半導体メモリ Granted JPS59121696A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57227760A JPS59121696A (ja) 1982-12-28 1982-12-28 不揮発性半導体メモリ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57227760A JPS59121696A (ja) 1982-12-28 1982-12-28 不揮発性半導体メモリ

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP14416892A Division JP2502008B2 (ja) 1992-06-04 1992-06-04 不揮発性半導体メモリ

Publications (2)

Publication Number Publication Date
JPS59121696A true JPS59121696A (ja) 1984-07-13
JPH0547920B2 JPH0547920B2 (de) 1993-07-20

Family

ID=16865941

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57227760A Granted JPS59121696A (ja) 1982-12-28 1982-12-28 不揮発性半導体メモリ

Country Status (1)

Country Link
JP (1) JPS59121696A (de)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61165892A (ja) * 1985-01-17 1986-07-26 Matsushita Electric Ind Co Ltd 不揮発性メモリの書込回路
US5889698A (en) * 1995-01-31 1999-03-30 Hitachi, Ltd. Nonvolatile memory device and refreshing method
US6320785B1 (en) 1996-07-10 2001-11-20 Hitachi, Ltd. Nonvolatile semiconductor memory device and data writing method therefor
US6418052B1 (en) * 1998-06-01 2002-07-09 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory equipped with data latch circuits for transferring one-bit data or multi-bit data
US6525960B2 (en) 1996-07-10 2003-02-25 Hitachi, Ltd. Nonvolatile semiconductor memory device including correction of erratic memory cell data
US7266017B2 (en) 1989-04-13 2007-09-04 Sandisk Corporation Method for selective erasing and parallel programming/verifying of cell blocks in a flash EEprom system
US7492660B2 (en) 1989-04-13 2009-02-17 Sandisk Corporation Flash EEprom system

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5146841A (de) * 1974-10-21 1976-04-21 Tokyo Shibaura Electric Co
JPS54161853A (en) * 1978-06-12 1979-12-21 Seiko Epson Corp Read-only memory

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5146841A (de) * 1974-10-21 1976-04-21 Tokyo Shibaura Electric Co
JPS54161853A (en) * 1978-06-12 1979-12-21 Seiko Epson Corp Read-only memory

Cited By (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61165892A (ja) * 1985-01-17 1986-07-26 Matsushita Electric Ind Co Ltd 不揮発性メモリの書込回路
US7492660B2 (en) 1989-04-13 2009-02-17 Sandisk Corporation Flash EEprom system
US7283397B2 (en) 1989-04-13 2007-10-16 Sandisk Corporation Flash EEprom system capable of selective erasing and parallel programming/verifying memory cell blocks
US7266017B2 (en) 1989-04-13 2007-09-04 Sandisk Corporation Method for selective erasing and parallel programming/verifying of cell blocks in a flash EEprom system
US7161830B2 (en) 1995-01-31 2007-01-09 Renesas Technology Corp. Clock synchronized nonvolatile memory device
US6850434B2 (en) 1995-01-31 2005-02-01 Renesas Technology Corp. Clock synchronized nonvolatile memory device
US6256230B1 (en) 1995-01-31 2001-07-03 Hitachi, Ltd. Nonvolatile memory device and refreshing method
US7542339B2 (en) 1995-01-31 2009-06-02 Solid State Storage Solutions, Llc Clock synchronized non-volatile memory device
US6366495B2 (en) 1995-01-31 2002-04-02 Hitachi, Ltd. Nonvolatile memory device and refreshing method
US5889698A (en) * 1995-01-31 1999-03-30 Hitachi, Ltd. Nonvolatile memory device and refreshing method
US6459614B1 (en) 1995-01-31 2002-10-01 Hitachi, Ltd. Non-volatile memory device and refreshing method
US7327604B2 (en) 1995-01-31 2008-02-05 Renesas Technology Corporation Clock synchronized non-volatile memory device
US6747941B2 (en) 1995-01-31 2004-06-08 Renesas Technology Corp. Clock synchronized non-volatile memory device
US6751119B2 (en) 1995-01-31 2004-06-15 Renesas Technology Corp. Clock synchronized non-volatile memory device
US6751120B2 (en) 1995-01-31 2004-06-15 Renesas Technology Corp. Clock synchronized non-volatile memory device
US6757194B2 (en) 1995-01-31 2004-06-29 Renesas Technology Corp. Clock synchronized non-volatile memory device
US6768672B2 (en) 1995-01-31 2004-07-27 Renesas Technology Corp. Clock Synchronized Non-Volatile Memory Device
US6801452B2 (en) 1995-01-31 2004-10-05 Renesas Technology Corp. Clock synchronized non-volatile memory device
US6804147B2 (en) 1995-01-31 2004-10-12 Renesas Technology Corp. Clock synchronized non-volatile memory device
US6829163B2 (en) 1995-01-31 2004-12-07 Hitachi, Ltd. Clock synchronized nonvolatile memory device
US6847549B2 (en) 1995-01-31 2005-01-25 Renesas Technology Corp. Clock synchronized non-volatile memory device
US6166949A (en) * 1995-01-31 2000-12-26 Hitachi, Ltd. Nonvolatile memory device and refreshing method
US6868006B2 (en) 1995-01-31 2005-03-15 Renesas Technology Corp. Clock synchronized non-volatile memory device
US6898118B2 (en) 1995-01-31 2005-05-24 Renesas Technology Corp. Clock synchronized non-volatile memory device
US7324375B2 (en) 1995-01-31 2008-01-29 Solid State Storage Solutions, Llc Multi-bits storage memory
US6912156B2 (en) 1995-01-31 2005-06-28 Renesas Technology Corp. Clock synchronized nonvolatile memory device
US6965525B2 (en) 1995-01-31 2005-11-15 Renesas Technology Corp. Clock synchronized nonvolatile memory device
US6111790A (en) * 1995-01-31 2000-08-29 Hitachi, Ltd. Non-volatile memory device and refreshing method
US7193894B2 (en) 1995-01-31 2007-03-20 Renesas Technology Corp. Clock synchronized nonvolatile memory device
US6038167A (en) * 1995-01-31 2000-03-14 Hitachi, Ltd. Nonvolatile memory device and refreshing method
US6038165A (en) * 1995-01-31 2000-03-14 Hitachi, Ltd. Nonvolatile memory device and refreshing method
US7286397B2 (en) 1995-01-31 2007-10-23 Renesas Technology Corporation Clock synchronized nonvolatile memory device
US6906952B2 (en) 1996-07-10 2005-06-14 Renesas Technology Corp. Nonvolatile semiconductor memory device and data writing method therefor
US6525960B2 (en) 1996-07-10 2003-02-25 Hitachi, Ltd. Nonvolatile semiconductor memory device including correction of erratic memory cell data
US6320785B1 (en) 1996-07-10 2001-11-20 Hitachi, Ltd. Nonvolatile semiconductor memory device and data writing method therefor
USRE44350E1 (en) 1996-07-10 2013-07-09 Renesas Electronics Corporation Nonvolatile semiconductor memory including multi-threshold voltage memory cells including voltage ranges indicating either an erase state or a two or more program state
US6418052B1 (en) * 1998-06-01 2002-07-09 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory equipped with data latch circuits for transferring one-bit data or multi-bit data

Also Published As

Publication number Publication date
JPH0547920B2 (de) 1993-07-20

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