JPS59115569A - Manufacture of photovoltaic element - Google Patents
Manufacture of photovoltaic elementInfo
- Publication number
- JPS59115569A JPS59115569A JP57224011A JP22401182A JPS59115569A JP S59115569 A JPS59115569 A JP S59115569A JP 57224011 A JP57224011 A JP 57224011A JP 22401182 A JP22401182 A JP 22401182A JP S59115569 A JPS59115569 A JP S59115569A
- Authority
- JP
- Japan
- Prior art keywords
- furnace
- cdcl2
- film
- sintered
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 229910004613 CdTe Inorganic materials 0.000 claims abstract description 13
- 239000000843 powder Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 239000011521 glass Substances 0.000 claims abstract description 5
- 229910052793 cadmium Inorganic materials 0.000 claims abstract description 4
- 238000010304 firing Methods 0.000 claims description 15
- 239000007789 gas Substances 0.000 claims description 15
- 230000004907 flux Effects 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 7
- 238000010030 laminating Methods 0.000 claims 1
- YKYOUMDCQGMQQO-UHFFFAOYSA-L cadmium dichloride Chemical compound Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 abstract description 32
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 8
- 239000011230 binding agent Substances 0.000 abstract description 3
- 239000013078 crystal Substances 0.000 abstract description 3
- 239000000203 mixture Substances 0.000 abstract description 3
- 238000001354 calcination Methods 0.000 abstract 3
- 239000003795 chemical substances by application Substances 0.000 abstract 2
- 230000008018 melting Effects 0.000 abstract 2
- 238000002844 melting Methods 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 239000011148 porous material Substances 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 13
- 238000005245 sintering Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000006073 displacement reaction Methods 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000002845 discoloration Methods 0.000 description 2
- 210000000795 conjunctiva Anatomy 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000000706 filtrate Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は太陽電池なとに使用可能なＣｄｓ／／ＣｄＴｅ
構造の光起電力素子の製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention provides Cds//CdTe that can be used in solar cells, etc.
The present invention relates to a method of manufacturing a photovoltaic device having a structure.
従来例の構成とその問題点
−すでに知られているように、ＣｄＳ／ＣｄＴｅ ｆ８
造の光起電力素子の製造方法として、ガラス基板上にｎ
形ＣａＳ焼結膜を形成し、その上に（Ｃｄ＋Ｔｅ）粉と
、融剤として作用する塩化カドミウムと粘結斉１１を加
えて混合し、泥状にしたものをスクリーン印刷し、これ
を有孔蓋伺きアルミナボートに入れベルトコンベア式連
続焼成炉で温度６００Ｃ近傍の不活性ガスを含む雰囲気
中で焼成することによってＣｄＴｅ焼結膜を形成するも
のかある。Conventional configuration and its problems - As is already known, CdS/CdTe f8
As a manufacturing method for a photovoltaic device, n
Form a CaS sintered film, add and mix (Cd + Te) powder, cadmium chloride that acts as a flux, and Caking Qi 11 on top of it, make a slurry, screen print it, and apply it to a perforated lid. There is a method in which a CdTe sintered film is formed by placing the material in an alumina boat and firing it in an atmosphere containing an inert gas at a temperature of around 600C in a belt conveyor type continuous firing furnace.
上記方法において、融剤として添加した塩化カドミウム
は、焼成中高度上昇と共に融解し、徐々に蒸発しなから
ＣｄＴｅの結晶成長作用を行い、焼成が終了した時点で
はほとんど塩化カドミウムは存在しなくなることが望ま
しい。In the above method, the cadmium chloride added as a flux melts as the altitude increases during firing, gradually evaporates, and then grows CdTe crystals, so that by the time firing is completed, almost no cadmium chloride exists. desirable.
従来の自然抽気での焼成方法では、塩化カドミウムが蒸
発して炉内で滞留し、連続焼成の場合、後続の素子は炉
内に滞留している塩化カドミウム等の影響を受け、焼成
の順序によっては特性の悪い結晶膜が出来る欠点がある
。またこれ以外にもガラス基板が黒くなったり、あるい
は炉内の雰囲気が変化して焼成不充分の形となってＣｄ
Ｔｅ粉がｄ、かれたりして特性に悪影響を及ぼし、可視
性及び早産焼成が出来ない欠点がある。In the conventional firing method using natural bleed air, cadmium chloride evaporates and remains in the furnace, and in the case of continuous firing, subsequent elements are affected by the cadmium chloride etc. that remains in the furnace, and depending on the firing order. has the disadvantage of producing a crystalline film with poor characteristics. In addition to this, the glass substrate may become black, or the atmosphere inside the furnace may change, resulting in insufficient firing, resulting in Cd.
There is a drawback that the Te powder is broken, which adversely affects the properties, and that visibility and premature firing are not possible.
発すＪの目的
本発明の目的は、前述の欠点を除去して連続焼成の場合
にも後続する素子に悪影響を一与えず、特性値か均一で
再現件のよい素子が得られる光起電力素子の製造方法を
捉供することにある。The purpose of the present invention is to provide a photovoltaic device that eliminates the above-mentioned drawbacks, does not have any adverse effect on subsequent devices even when continuously fired, and can provide devices with uniform characteristic values and good reproducibility. The purpose is to capture and provide manufacturing methods.
発明の構成
本発明の製造方法＋ａ、ｃｄ５焼結膜上にＣｄとＴｅの
粉末および融剤を含むペーストを塗イ１〕シた後、これ
を生気密性ボートに入れ、ベルトコンベア式連続焼成炉
を用い、不活性ガス雰囲気中において、炉内に発生する
融剤ガスを前記不活性ガスの流吊に対して２０〜４０％
のｆｉｌ気量で強制４′）ｌ気しながら焼結するもので
ある。Structure of the Invention Manufacturing method of the present invention +a: After applying a paste containing Cd and Te powders and a flux on the CD5 sintered film, the paste is placed in an airtight boat and placed in a belt conveyor type continuous firing furnace. In an inert gas atmosphere, the flux generated in the furnace is reduced by 20 to 40% of the inert gas flow.
The sintering is performed while forcing the filtrate to 4').
以下本発明の製造方法について図面を参照しながら具体
的に説明する。The manufacturing method of the present invention will be specifically explained below with reference to the drawings.
第１図は本発明に用いるベルトコンベア式連続焼成炉の
全体構成を示す断面図である。同図において、焼成炉は
ヒータ１１によって中央部が約６２０Ｃとなるように設
定炉入口カーテン外側１゜炉入口カーテン内側２．炉内
中央３．炉出口カーテン内側４．炉出口カーテン外側ら
にそれぞれ同流量が流されている。この炉内へガラス基
板上にＣｄＳをスクリーン印刷して焼結し、更にこの上
に、Ｃｄ粉、Ｔｅ粉、塩化カドミウムおよび粘結剤から
なる混合物をスクリーン印刷または塗布し、１００Ｃに
て乾燥後有孔蓋付きアルミナボート６に入れ、連続的に
ベルト７に乗せ、ベルトスピード２〜４ Ｃｍ ／ ｒ
ｎｉ ｎの速さで炉内に送り込む。炉内に送り込まれた
有孔蓋付きアルミナボート６内では、畠度上昇とともに
塩化カドミウムが溶解を始め、さらに蒸発して蒸気とな
る。これによってＣｄＴｅの結晶成長が進行して焼結膜
が出来る。塩化カドミウム蒸気は、アルミナボート６の
蓋の孔を通り、炉内に滞留してＮ２ガス中に混入する。FIG. 1 is a sectional view showing the overall configuration of a belt conveyor type continuous firing furnace used in the present invention. In the figure, the firing furnace is set so that the temperature at the center is about 620C by the heater 11: 1° outside the furnace entrance curtain, 2° inside the furnace entrance curtain. Center of furnace 3. Furnace outlet curtain inside 4. The same flow rate is applied to the outside of the furnace outlet curtain. CdS was screen printed on a glass substrate into this furnace and sintered, and then a mixture of Cd powder, Te powder, cadmium chloride and a binder was screen printed or applied on top of this, and after drying at 100C. Place it in an alumina boat 6 with a perforated lid and continuously place it on the belt 7 at a belt speed of 2 to 4 Cm/r.
It is fed into the furnace at a speed of ni n. In the alumina boat 6 with a perforated lid fed into the furnace, cadmium chloride begins to dissolve as the grain level increases, and further evaporates to become steam. As a result, CdTe crystal growth progresses and a sintered film is formed. Cadmium chloride vapor passes through the hole in the lid of the alumina boat 6, stays in the furnace, and mixes into the N2 gas.
連続焼結をするにつれて炉内の塩化カドミウムの蒸気の
濃度は高くなり、ＣｄＴｅ焼結膜に悪影響をｌｊえて、
従来例で述べたような欠点が生じる。As the sintering continues, the concentration of cadmium chloride vapor in the furnace increases, which has an adverse effect on the CdTe sintered film.
The drawbacks described in the conventional example arise.
このため本発明では、炉内に滞留する塩化カドミウムそ
の他の蒸気を炉外に強制排気する方法を採っている。す
なわち、第１図に示す炉内の上部に、数箇所に吸い込み
孔のある排気用ガス管８を取り伺け、その排気用ガス管
８を流量計９につなぎ、さらにこれをアスピレータ、真
空ポンプ等（図示せず）に連結している。この装置によ
って炉内のガスを強制排気させ、炉内を一定にクリーニ
ングが出来ると共に、排気…を制御することが出来る。For this reason, the present invention employs a method of forcibly exhausting cadmium chloride and other vapors remaining in the furnace to the outside of the furnace. That is, the exhaust gas pipe 8, which has suction holes in several places, is located at the upper part of the furnace shown in Fig. 1, and the exhaust gas pipe 8 is connected to a flow meter 9, which is then connected to an aspirator and a vacuum pump. etc. (not shown). This device forcibly exhausts the gas inside the furnace, making it possible to constantly clean the inside of the furnace and controlling the exhaust.
実施例の説明
次に本発明の実施例を比較例と対比しながら説明をする
。DESCRIPTION OF EXAMPLES Next, examples of the present invention will be described while comparing them with comparative examples.
（比較例１）
ガラス基板上に、スクリーン印刷法でＣｄＳ粉末に塩化
カドミウムを添加したＣｄＳペーストを塗布してｃ ａ
Ｓ 層を形成し、これを約６９０Ｃで焼成してｃ ａ
Ｓ 焼結膜を作成した。次にその上にＣｄＴｅ粉１０
０７に対して融剤として塩化カドミウムを０．５ｙ加え
、さらに粘結剤を加えてＣｄＴｅペーストを作成し、こ
れをｃａｓｇ結膜上にスクリーン印刷した。印刷後乾燥
機を用い、１ＱＯＣの温度で３０分間、不要の有機溶媒
を蒸発させて除去した。(Comparative Example 1) A CdS paste made by adding cadmium chloride to CdS powder was applied onto a glass substrate using a screen printing method.
Form an S layer and sinter it at about 690C to form a ca
A sintered film was created. Next, add 10 CdTe powder on top of that.
0.5y of cadmium chloride was added as a flux to 07, and a binder was further added to prepare a CdTe paste, which was screen printed on the casg conjunctiva. After printing, unnecessary organic solvent was removed by evaporation using a dryer at a temperature of 1QOC for 30 minutes.
次に、第１図のベルトコンベア式連続焼結炉により焼結
を行った。焼結条件は、炉内中央部温度を６２０Ｃとし
、炉入口カーテン外側１．炉入口カーテン内側２．炉内
中央３．炉出口カーテン内（ｉｊｌｌ ４ を炉出口カ
ーテン外側５に設けられた各ガス管孔よりＮ２ガスを毎
分定Ｆ−に流し、損気ガス管８より、真空ポンプで炉内
中央部のガスを排気した。排気径路途中に流量計９と排
気量調節コックを設け、排気量は、Ｎ２ガス１００ Ｑ
、／ ｍｉｎに対して１２ Ｑ ／ ｍｉｎの流量にし
た。そして印刷乾燥さぜた基板を有孔蓋伺きアルミナボ
ート６中に入れ、ベルト７上にアルミナボート６を３列
に並べ、ベルトスピードを毎分３ｃｍとして焼結を行な
った。Next, sintering was performed using a belt conveyor type continuous sintering furnace shown in FIG. The sintering conditions were as follows: The temperature at the center of the furnace was 620C, and the temperature at the outside of the furnace entrance curtain was 1. Furnace entrance curtain inside 2. Center of furnace 3. Inside the furnace exit curtain (ijll 4), N2 gas is flowed at a constant rate of F- per minute from each gas pipe hole provided on the outside of the furnace exit curtain 5, and the gas in the central part of the furnace is evacuated from the gas pipe 8 using a vacuum pump. A flow meter 9 and a displacement adjustment cock were installed in the middle of the exhaust path, and the displacement was N2 gas 100Q.
,/min to a flow rate of 12 Q/min. Then, the printed and dried substrate was placed in an alumina boat 6 with a perforated lid, the alumina boats 6 were arranged in three rows on a belt 7, and sintering was performed at a belt speed of 3 cm/min.
このようにして得られた素子は、次にＣｄＴｅ上にカー
ボン電極、さらにその上にＡｙペーストをスクリーン印
刷した。ｉ ａ Ｃｄ Ｓ膜上には（Ａｙ＋Ｉｎ）ペー
ストを印刷し、−これらを種々の条件で熱処理した。The thus obtained device was then screen-printed with a carbon electrode on CdTe and further with Ay paste on top of the carbon electrode. (Ay+In) pastes were printed on the i a Cd S films and then heat treated under various conditions.
このような方法で得られた素子は、焼結膜による特性値
のばらつきがあり、強制排気の効果はなかった。Elements obtained by such a method had variations in characteristic values due to the sintered film, and forced evacuation had no effect.
（実施例１）
大要は上記比較例１と変りかないが、異なる点は、強制
排気量を多くした点である。比較例１では、強制排気量
ばＮ２ガス１００１ ／ ｍｉｎ Ｋ対して１２ Ｑ
／ ｍｉｎとしたが、本実施例では、これをさらに多く
して強制排気量を２０ Ｑ ／ ｍｉ ｎとした。強制
排気量を多くすることにより、比較例１より排気効果が
出て、焼結順序による素子特性値のばらつきが小さくな
った。同時に基板の変色もなくなっ！こ。(Example 1) The general outline is the same as Comparative Example 1, but the difference is that the forced exhaust amount was increased. In Comparative Example 1, the forced exhaust amount is 12 Q for N2 gas 1001/min K.
However, in this example, this was further increased to make the forced displacement amount 20 Q/min. By increasing the forced evacuation amount, the evacuation effect was more effective than in Comparative Example 1, and the variation in device characteristic values due to the sintering order was reduced. At the same time, there is no more discoloration of the board! child.
（実施例２）
比較例１および実施例１と異なる点は、強制４１１気量
をさらに多くした点である。本実施例では、強制排気量
をＮ２ガス１００ Ｑ ／ ｍｉｎに対して３２ Ｑ
／ ｍｉｎとしたが、さらに排気効果が出て、焼成順序
による素子特性のばらつきが名しく改善され、基板の変
色もなくなり、外観もよくなった。(Example 2) The difference from Comparative Example 1 and Example 1 is that the forced 411 air volume was further increased. In this example, the forced exhaust amount is 32 Q/min for N2 gas 100 Q/min.
/min, but the exhaust effect was further improved, the variation in device characteristics due to the firing order was significantly improved, the discoloration of the substrate was eliminated, and the appearance was improved.
（比較例２）
比較例１および実施例１．２と異なる点は強制排気量を
さらに多くした点である。本比較例ではＮ２ガス流量１
００ Ｑ ／ ｍｉｎに対して強制排気量を５０ Ｑ
／ ｍｉｎとした。この場合には、強制排気量が多いた
めに炉内の不活性雰囲気仁度が不足しＣｄＴｅ焼結膜が
酸化した。(Comparative Example 2) The difference from Comparative Example 1 and Example 1.2 is that the forced exhaust amount was further increased. In this comparative example, the N2 gas flow rate is 1
Forced displacement is 50 Q for 00 Q/min.
/min. In this case, due to the large amount of forced exhaust, the intensity of the inert atmosphere in the furnace was insufficient and the CdTe sintered film was oxidized.
第２図および第３図に上記各実施例および比較例で得ら
れた素子の実用変換効率ηＰをＣｄＴｅ膜の焼結膜に示
した。第２図中Ａは従来の方法、Ｂは比較例１、第３図
中Ｃは実施例１、Ｄは実施例２、Ｅは比較例２のそれぞ
れの測定値である。FIGS. 2 and 3 show the practical conversion efficiency ηP of the devices obtained in the above-mentioned Examples and Comparative Examples for the sintered CdTe film. In FIG. 2, A is the conventional method, B is the measured value of Comparative Example 1, C in FIG. 3 is the measured value of Example 1, D is Example 2, and E is the measured value of Comparative Example 2.
第２図および第３図から明らかなように、本実施例で得
られた素子の実用変換効率ηＰは焼成の順序に関係々く
均一で再現性のよい素子が実現できた。As is clear from FIGS. 2 and 3, the practical conversion efficiency ηP of the device obtained in this example was uniform regardless of the firing order, and the device was realized with good reproducibility.
発明の効果
以上の説明から明らかなように、本発明の製造法は炉内
に発生する融剤ガス等を不活性ガスの流部に対応した所
定の流出で強制クト気するものであり、ベルトコンベア
炉による焼成膜の特性ばらつきがなくなるために曜産が
可能になり、史には焼成膜の色が一定となるために素子
の外観が良好となる。Effects of the Invention As is clear from the above explanation, the manufacturing method of the present invention is to forcibly vent the fluxing gas etc. generated in the furnace by a predetermined outflow corresponding to the flow part of the inert gas. Since variations in the properties of the fired film due to the conveyor furnace are eliminated, daily production becomes possible, and since the color of the fired film is constant, the appearance of the device is improved.
第１図は本発明に用いるベルトコンベ゛ア式連続ｉ：ｒ
ｌ＆成炉の全体構成を示す１わ１面図、第２図および第
３図は本発明の実施例および比較例で得られた素子の実
用変換効率を示す特性図である。
６・・・・・・有孔蓋付きアルミナボー１・、７・・・
・・・ベルト、８，１２・ ガス管、９・・・・・流覇
言）、１０・・・・・・カーテン、１１・・・・・ヒー
タ。
特Ｗ１出願人 工業技術院長 石 坂 誠１−ご１５１
図
ス党特頃
５．３３図
決紹唄Figure 1 shows a belt conveyor type continuous i:r system used in the present invention.
FIGS. 2 and 3 are characteristic diagrams showing the practical conversion efficiency of the elements obtained in the examples and comparative examples of the present invention. 6... Alumina bow with perforated lid 1, 7...
...Belt, 8, 12, gas pipe, 9...Ryuhagen), 10...Curtain, 11...Heater. Special W1 applicant Makoto Ishizaka, Director of the Agency of Industrial Science and Technology 1-151
Zusu party special 5.33 Zuketsu introduction song
Claims (1)
膜を積層して光起電力素子を製造するに際し、前記ｃａ
３焼結膜上とＣｄとＴｅの粉末および融剤を含むペース
トを塗布し７こ後、これを生気密性ホードに入れ、ベル
トコンベア式連続焼成炉を用い、不活性ガス雰囲気中に
おいて、炉内に発生する融剤ガスを前記不活性ガスの流
ｌに対して２０〜４０係の排気郊で強制刊気しながら鶴
、結することを７（Ｉｆｆ徴とする光起電力素子の製造
方法。When manufacturing a photovoltaic device by laminating a CdS conjunctive film and a CdTe sintered film on a transparent glass substrate, the above ca
3 After applying a paste containing Cd and Te powders and a flux to the sintered film, it was placed in an airtight hoard and heated in an inert gas atmosphere using a belt conveyor type continuous firing furnace. 7. A method for producing a photovoltaic device, in which the flux generated during the flow of the inert gas is tied up while being forcibly vented at 20 to 40 degrees of exhaust gas to the inert gas flow.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57224011A JPS59115569A (en) | 1982-12-22 | 1982-12-22 | Manufacture of photovoltaic element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57224011A JPS59115569A (en) | 1982-12-22 | 1982-12-22 | Manufacture of photovoltaic element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59115569A true JPS59115569A (en) | 1984-07-04 |
| JPS6227556B2 JPS6227556B2 (en) | 1987-06-15 |
Family
ID=16807184
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57224011A Granted JPS59115569A (en) | 1982-12-22 | 1982-12-22 | Manufacture of photovoltaic element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59115569A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61187281A (en) * | 1985-02-14 | 1986-08-20 | Matsushita Electric Ind Co Ltd | Manufacture of solar cell |
| WO1997045880A1 (en) * | 1996-05-28 | 1997-12-04 | Matsushita Battery Industrial Co., Ltd. | METHOD FOR FORMING CdTe FILM AND SOLAR BATTERY USING THE FILM |
| EP1788638A2 (en) * | 2005-11-17 | 2007-05-23 | Gisulfo Baccini | Apparatus for the production of thin silicon photovoltaic cells and electronic circuits made of rigid and flexible material |
| CN102261838A (en) * | 2011-05-31 | 2011-11-30 | 江苏顺风光电科技有限公司 | Caterpillar band for sintering furnace of solar cells |
-
1982
- 1982-12-22 JP JP57224011A patent/JPS59115569A/en active Granted
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61187281A (en) * | 1985-02-14 | 1986-08-20 | Matsushita Electric Ind Co Ltd | Manufacture of solar cell |
| JPH0365907B2 (en) * | 1985-02-14 | 1991-10-15 | ||
| WO1997045880A1 (en) * | 1996-05-28 | 1997-12-04 | Matsushita Battery Industrial Co., Ltd. | METHOD FOR FORMING CdTe FILM AND SOLAR BATTERY USING THE FILM |
| US5994642A (en) * | 1996-05-28 | 1999-11-30 | Matsushita Battery Industrial Co., Ltd. | Method for preparing CdTe film and solar cell using the same |
| EP1788638A2 (en) * | 2005-11-17 | 2007-05-23 | Gisulfo Baccini | Apparatus for the production of thin silicon photovoltaic cells and electronic circuits made of rigid and flexible material |
| EP1788638A3 (en) * | 2005-11-17 | 2007-06-27 | Gisulfo Baccini | Apparatus for the production of thin silicon photovoltaic cells and electronic circuits made of rigid and flexible material |
| CN102261838A (en) * | 2011-05-31 | 2011-11-30 | 江苏顺风光电科技有限公司 | Caterpillar band for sintering furnace of solar cells |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6227556B2 (en) | 1987-06-15 |
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