CN106876586A - Solar Cell - Google Patents
Solar Cell Download PDFInfo
- Publication number
- CN106876586A CN106876586A CN201610874876.8A CN201610874876A CN106876586A CN 106876586 A CN106876586 A CN 106876586A CN 201610874876 A CN201610874876 A CN 201610874876A CN 106876586 A CN106876586 A CN 106876586A
- Authority
- CN
- China
- Prior art keywords
- electrode
- solar cell
- seal
- gas
- light absorbing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007789 gas Substances 0.000 claims abstract description 87
- 230000027756 respiratory electron transport chain Effects 0.000 claims abstract description 67
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 40
- 239000001301 oxygen Substances 0.000 claims abstract description 40
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 40
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 35
- 150000001875 compounds Chemical class 0.000 claims abstract description 28
- 150000001768 cations Chemical class 0.000 claims abstract description 27
- 239000004065 semiconductor Substances 0.000 claims abstract description 25
- 239000000203 mixture Substances 0.000 claims abstract description 21
- -1 halide anion Chemical group 0.000 claims abstract description 20
- 210000004027 cell Anatomy 0.000 claims description 176
- 230000005540 biological transmission Effects 0.000 claims description 61
- 239000000758 substrate Substances 0.000 claims description 37
- 239000003463 adsorbent Substances 0.000 claims description 16
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical group O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 10
- 230000005611 electricity Effects 0.000 claims description 8
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 8
- 210000002706 plastid Anatomy 0.000 claims description 6
- 238000000034 method Methods 0.000 description 59
- 239000000463 material Substances 0.000 description 35
- 238000006243 chemical reaction Methods 0.000 description 23
- 230000000052 comparative effect Effects 0.000 description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 16
- 238000007789 sealing Methods 0.000 description 15
- 230000000694 effects Effects 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002904 solvent Substances 0.000 description 10
- 239000002184 metal Substances 0.000 description 9
- 230000009471 action Effects 0.000 description 8
- 239000002585 base Substances 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 239000005001 laminate film Substances 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 230000009467 reduction Effects 0.000 description 8
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 7
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052783 alkali metal Inorganic materials 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
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- 239000010408 film Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 230000004941 influx Effects 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
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- 238000004458 analytical method Methods 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 239000002608 ionic liquid Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 4
- 239000011358 absorbing material Substances 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 4
- 230000005525 hole transport Effects 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 150000001340 alkali metals Chemical class 0.000 description 3
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 3
- 150000001342 alkaline earth metals Chemical class 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 239000005416 organic matter Substances 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000003115 supporting electrolyte Substances 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 239000011135 tin Substances 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- 229910002971 CaTiO3 Inorganic materials 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-O Methylammonium ion Chemical compound [NH3+]C BAVYZALUXZFZLV-UHFFFAOYSA-O 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910002367 SrTiO Inorganic materials 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 150000003863 ammonium salts Chemical class 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- 239000003575 carbonaceous material Substances 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000006392 deoxygenation reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- XLYOFNOQVPJJNP-ZSJDYOACSA-N heavy water Substances [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 description 2
- 150000002460 imidazoles Chemical class 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 1
- IBZJNLWLRUHZIX-UHFFFAOYSA-N 1-ethyl-3-methyl-2h-imidazole Chemical compound CCN1CN(C)C=C1 IBZJNLWLRUHZIX-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- PNKUSGQVOMIXLU-UHFFFAOYSA-N Formamidine Chemical compound NC=N PNKUSGQVOMIXLU-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical group O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 229910003090 WSe2 Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- JTCFNJXQEFODHE-UHFFFAOYSA-N [Ca].[Ti] Chemical compound [Ca].[Ti] JTCFNJXQEFODHE-UHFFFAOYSA-N 0.000 description 1
- ADHOFFHMSKLZED-UHFFFAOYSA-J [F-].[K+].[B+3].[F-].[F-].[F-] Chemical compound [F-].[K+].[B+3].[F-].[F-].[F-] ADHOFFHMSKLZED-UHFFFAOYSA-J 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229920005549 butyl rubber Polymers 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000039 congener Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- PDZKZMQQDCHTNF-UHFFFAOYSA-M copper(1+);thiocyanate Chemical compound [Cu+].[S-]C#N PDZKZMQQDCHTNF-UHFFFAOYSA-M 0.000 description 1
- KVMPQUTWRWVTQP-UHFFFAOYSA-N cyanatoboronic acid Chemical class OB(O)OC#N KVMPQUTWRWVTQP-UHFFFAOYSA-N 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002148 esters Chemical group 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229910003472 fullerene Inorganic materials 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002391 heterocyclic compounds Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 150000002466 imines Chemical class 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- RQQRAHKHDFPBMC-UHFFFAOYSA-L lead(ii) iodide Chemical compound I[Pb]I RQQRAHKHDFPBMC-UHFFFAOYSA-L 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910003473 lithium bis(trifluoromethanesulfonyl)imide Inorganic materials 0.000 description 1
- MHCFAGZWMAWTNR-UHFFFAOYSA-M lithium perchlorate Chemical compound [Li+].[O-]Cl(=O)(=O)=O MHCFAGZWMAWTNR-UHFFFAOYSA-M 0.000 description 1
- 229910001486 lithium perchlorate Inorganic materials 0.000 description 1
- QSZMZKBZAYQGRS-UHFFFAOYSA-N lithium;bis(trifluoromethylsulfonyl)azanide Chemical compound [Li+].FC(F)(F)S(=O)(=O)[N-]S(=O)(=O)C(F)(F)F QSZMZKBZAYQGRS-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 150000002892 organic cations Chemical class 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000033116 oxidation-reduction process Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 150000003233 pyrroles Chemical class 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910052959 stibnite Inorganic materials 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 125000006617 triphenylamine group Chemical group 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2004—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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Abstract
A mode of the invention is related to a kind of solar cell, and it has：1st electrode；Electron transfer layer, it is located on the 1st electrode, and contains semiconductor；Light absorbing zone, it is located on the electron transfer layer, comprising using composition formula AMX3The perovskite-type compounds that (in formula, A is 1 valency cation, and M is divalent cation, and X is halide anion) represents；2nd electrode, it is located on the light absorbing zone；And seal, it is sealed at least a portion of at least a portion of the 1st electrode, the electron transfer layer, the light absorbing zone and the 2nd electrode.At least a portion for the 1st electrode sealed in the seal and by the seal, between the electron transfer layer, the light absorbing zone and at least a portion of the 2nd electrode, exist containing aerobic gas.The concentration of the oxygen in the gas is calculated as more than 5% with volume fraction, and the concentration of water is calculated as below 300ppm with volume fraction.
Description
Technical field
The present invention relates to a kind of solar cell.
Background technology
In recent years, carried out that AMX will be used3The perovskite-type compounds and its similar structures body of expression are used as light absorbing material
Solar cell research and development.Japanese Unexamined Patent Publication 2014-175472 publications disclose a kind of solar cell, and it is in substrate
On successively have first electrode layer, electron transfer layer, by perovskite-type compounds (RNH3)nPbI(2+n)The light absorbing zone of composition,
Hole transmission layer and the second electrode lay.
The content of the invention
A mode of the invention is related to a kind of solar cell, and it has：1st electrode；Electron transfer layer, it is located at described
On 1st electrode, and contain semiconductor；Light absorbing zone, it is located on the electron transfer layer, comprising using composition formula AMX3(in formula,
A be 1 valency cation, M be divalent cation, X is halide anion) represent perovskite-type compounds；2nd electrode, it is located at institute
State on light absorbing zone；And seal, it is by least a portion, the electron transfer layer, the light absorbs of the 1st electrode
At least a portion of layer and the 2nd electrode is sealed.In the seal and the 1st electricity sealed by the seal
Between at least a portion of at least a portion of pole, the electron transfer layer, the light absorbing zone and the 2nd electrode, deposit
Containing aerobic gas.The concentration of the oxygen in the gas is calculated as more than 5% with volume fraction, and the concentration of water is with volume fraction
For below 300ppm.
Other manner of the invention is related to a kind of solar cell, and it has：1st electrode；Electron transfer layer, it is located at institute
State on the 1st electrode, and contain semiconductor；Light absorbing zone, it is located on the electron transfer layer, comprising using composition formula AMX3(formula
In, A be 1 valency cation, M be divalent cation, X is halide anion) represent perovskite-type compounds；2nd electrode, its position
In on the light absorbing zone；Seal, it is by least a portion, the electron transfer layer, the light absorbs of the 1st electrode
At least a portion of layer and the 2nd electrode is sealed；And moisture adsorbent, its be located at the seal with by described close
Seal at least a portion, the electron transfer layer, the light absorbing zone and the 2nd electrode of the 1st electrode of body sealing
Between at least a portion.In the seal and at least a portion, the electricity of the 1st electrode sealed by the seal
Between at least a portion of sub- transport layer, the light absorbing zone and the 2nd electrode, exist containing aerobic gas.The gas
The concentration of the oxygen in body is calculated as more than 5% with volume fraction.
Brief description of the drawings
Fig. 1 is the sectional view of the solar cell of the 1st implementation method of the invention.
Fig. 2 is the sectional view of the solar cell of the 2nd implementation method of the invention.
Fig. 3 is the sectional view of the solar cell of the 3rd implementation method of the invention.
Fig. 4 is the sectional view of the solar cell of the 4th implementation method of the invention.
Fig. 5 is the sectional view of the solar cell of the 5th implementation method of the invention.
Fig. 6 is the sectional view of the solar cell of the 6th implementation method of the invention.
Specific embodiment
Before embodiments of the present invention are illustrated, the opinion to being obtained by the present inventor is illustrated.By calcium
Titanium ore type compound is used as the former solar cell of light absorbing material with the extension of use time, conversion efficiency reduction.
As a reason of conversion efficiency reduction, light absorbing material i.e. perovskite-type compounds can be included because of the moisture in air
And decompose.In addition, in the case where solar cell has hole transmission layer, can be by making the sky in hole transmission layer
Hole transport materials part oxidation, so as to improve cavity transmission ability.But, the oxysome of hole mobile material is by air
Moisture is reduced.Thus, it is possible to thinking the reduction of cavity transmission ability also turns into a reason of conversion efficiency reduction.
On the other hand, as long as the composition of a mode of the invention, it is possible to suppress the light containing perovskite-type compounds
Contact with moisture in absorbed layer and hole transmission layer and air.Thus, it is possible to provide a kind of durability solar-electricity higher
Pond.
The present invention includes the solar cell described in following project.
[project 1]
A mode of the invention is related to a kind of solar cell, and it has：1st electrode；Electron transfer layer, it is located at described
On 1st electrode, and contain semiconductor；Light absorbing zone, it is located on the electron transfer layer, comprising using composition formula AMX3(in formula,
A be 1 valency cation, M be divalent cation, X is halide anion) represent perovskite-type compounds；2nd electrode, it is located at institute
State on light absorbing zone；And seal, it is by least a portion, the electron transfer layer, the light absorbs of the 1st electrode
At least a portion of layer and the 2nd electrode is sealed.In the seal and the 1st electricity sealed by the seal
Between at least a portion of at least a portion of pole, the electron transfer layer, the light absorbing zone and the 2nd electrode, deposit
Containing aerobic gas.The concentration of the oxygen in the gas is calculated as more than 5% with volume fraction, and the concentration of water is with volume fraction
For below 300ppm.
[project 2]
Other manner of the invention is related to a kind of solar cell, and it has：1st electrode；Electron transfer layer, it is located at institute
State on the 1st electrode, and contain semiconductor；Light absorbing zone, it is located on the electron transfer layer, comprising using composition formula AMX3(formula
In, A be 1 valency cation, M be divalent cation, X is halide anion) represent perovskite-type compounds；2nd electrode, its position
In on the light absorbing zone；Seal, it is by least a portion, the electron transfer layer, the light absorbs of the 1st electrode
At least a portion of layer and the 2nd electrode is sealed；And moisture adsorbent, its be located at the seal with by described close
Seal at least a portion, the electron transfer layer, the light absorbing zone and the 2nd electrode of the 1st electrode of body sealing
Between at least a portion.In the seal and at least a portion, the electricity of the 1st electrode sealed by the seal
Between at least a portion of sub- transport layer, the light absorbing zone and the 2nd electrode, exist containing aerobic gas.The gas
The concentration of the oxygen in body is calculated as more than 5% with volume fraction.
[project 3]
Solar cell according to project 1 or project 2, wherein, the gas further contains inactive gas, institute
The concentration for stating the inactive gas in gas can also be more than 50% with volume fraction.
[project 4]
Solar cell according to any one of project 1~3, wherein, the concentration of the water in the gas is with volume
Fraction meter can also be below 130ppm.
[project 5]
Solar cell according to any one of project 1~4, wherein, the gas and the light absorbing zone also may be used
To contact.
[project 6]
Solar cell according to any one of project 1~5, wherein, the solar cell can also be further
With the hole transmission layer being configured between the light absorbing zone and the 2nd electrode, the seal can also further by
The hole transmission layer sealing.
[project 7]
Solar cell according to project 6, wherein, the gas and the hole transmission layer can also be contacted.
[project 8]
Solar cell according to any one of project 1~7, wherein, one can also be entered in the light absorbing zone
Step has porous layer, and the porous layer is configured in the position being in contact with the electron transfer layer, and comprising porous plastid.
[project 9]
Solar cell according to any one of project 1~8, wherein, the semiconductor can also be titanium oxide.
[project 10]
Solar cell according to any one of project 1~9, wherein, the 1 valency cation can also be containing being selected from
At least one among methyl ammonium cation, carbonamidine (formamidinium) cation.
[project 11]
Solar cell according to any one of project 1~10, wherein, the divalent cation can also contain choosing
From Pb2+、Ge2+And Sn2+Among at least one.
[project 12]
Solar cell according to any one of project 1~11, wherein, the solar cell can also be further
With the substrate for supporting the 1st electrode.
With reference to the accompanying drawings, embodiments of the present invention are illustrated.
(the 1st implementation method)
The solar cell 100 of present embodiment is as shown in figure 1, have the 1st electrode 2, electron transfer layer 3, light absorbing zone
4th, the 2nd electrode 5 and seal 6.
Electron transfer layer 3 is located on the 1st electrode 2.Electron transfer layer 3 includes semiconductor.Light absorbing zone 4 is configured at electronics biography
On defeated layer 3.Light absorbing zone 4 is included and uses composition formula AMX3The perovskite-type compounds of expression.Wherein, A is 1 valency cation, and M is 2
Valency cation, X is halide anion.2nd electrode 5 is located on light absorbing zone 4.Seal 6 by the 1st electrode 2, electron transfer layer 3,
The electrode 5 of light absorbing zone 4 and the 2nd is sealed.1st electrode 2 and the 2nd electrode 5 are electrically connected with outside seal 6 respectively.
In seal 6 and the 1st electrode 2, electron transfer layer 3, the electrode 5 of light absorbing zone 4 and the 2nd sealed by seal 6
Between there is gas.The gas is containing aerobic.The concentration of the oxygen in the gas is calculated as more than 5% with volume fraction, the concentration of water with
Volume fraction is calculated as below 300ppm.
Solar cell 100 can also have substrate 1.In the case, as shown in figure 1, the 1st electrode 2 is configured at substrate 1
On.
Then, the basic action effect with regard to the solar cell 100 of present embodiment is illustrated.If making light irradiation
On solar cell 100, then light absorbing zone 4 absorbs light, so as to produce the electronics and hole being excited.The electronics being excited
Moved to electron transfer layer 3.On the other hand, moved to the 2nd electrode 5 in the hole for being produced in light absorbing zone 4.Electron transfer layer 3 with
1st electrode 2 is connected, the 1st electrode 2 and the 2nd electrode 5 respectively with the external electrical connections of seal 6.Therefore, it can from solar cell
In 100, the 1st electrode 2 is taken out into electric current as positive pole as negative pole, using the 2nd electrode 5.
In addition, in seal 6 and the 1st electrode 2, electron transfer layer 3, the light absorbing zone 4 and the 2nd sealed by seal 6
Between electrode 5, there is the gas containing the oxygen that more than 5% is calculated as with volume fraction.The concentration of the water in the gas is with volume integral
Number is calculated as below 300ppm.Therefore, solar cell 100 has durability higher.Its reason is described as follows.
The perovskite-type compounds AMX contained in light absorbing zone 43Valence band energy level be in than water redox
Current potential position higher.
Therefore, in presence of water, in perovskite-type compounds, there is the oxidation reaction of water as shown below,
So as to produce oxygen, proton and electronics.
2H2O→O2+4H++4e- (1)
It is CH for example in perovskite-type compounds3NH3PbI3In the case of, in the proton produced by the reaction of formula (1)
And in the presence of oxygen, there is following reaction.
CH3NH3PbI3+H+→CH3NH3 ++HPbI3 (2)
CH3NH3PbI3+1/2O2→CH3NH3I+PbO+I2 (3)
From formula (1) to the result of the reaction of (3), perovskite-type compounds are decomposed and become and turn to yellow or white.
Therefore, the light absorpting ability reduction of light absorbing zone 4.
According to formula (1) and Le Chatelier's principle (Le Chatelier Principle), in perovskite-type compounds
Ambient water it is more or oxygen is fewer, the reaction of formula (1) is got over and is susceptible to.It is contained in the space sealed by seal 6
In gas, oxygen contains more than 5% with volume fraction, and the concentration of water is calculated as below 300ppm with volume fraction.Therefore, in the sun
In energy battery 100, the possibility of the reaction of generating polynomial (1) can be reduced.Therefore, in solar cell 100, light can be suppressed
The decomposition of the perovskite-type compounds contained in absorbed layer 4.Thus, it is possible to suppress the conversion efficiency of solar cell 100 with
The process of time and reduce, thus can be improved the durability of solar cell 100.
The measure of water concentration and oxygen concentration in the space sealed by seal 6 in contained gas can for example be used
Atmospheric pressure ionization mass spectrograph (API-MS) is carried out.First, solar cell 100 is placed in the torpescence gas such as argon or krypton
In the chamber that body is full of.Make seal 6 damaged in chamber, thus make gas contained in the space that is sealed by seal 6
Outflow in from solar cell 100.Then, quantitative analysis is carried out to the gas in chamber using API-MS.To close by seal 6
All the components in the space of envelope in contained gas are quantified, and calculate the ratio of the water or oxygen in the summation of its amount,
It is possible thereby to obtain water concentration and oxygen concentration.As the gas beyond deoxygenation, water contained in the space sealed by seal 6
Body, can include the inactive gas such as nitrogen and rare gas, carbon dioxide etc..
If additionally, with the analysis of gas in use full of the congener inactive gas of inactive gas in chamber
It is contained within the space sealed by seal 6, then the analysis of accurate gas is possible to become difficult.Then, by seal 6
In the case that the species of contained gas is not clear in the space of sealing, prepare 2 same solar cells, as full of chamber
2 solar cells, using the mutually different inactive gas of species, are pressed above-mentioned step by indoor inactive gas respectively
Carry out the analysis of gas.By comparing 2 analysis results, gas contained in the space sealed by seal 6 just can be obtained
The composition of body.
The solar cell 100 of present embodiment can for example be made using following method.First, in substrate 1
Surface formed the 1st electrode 2.Then, electron transfer layer 3 is formed using sputtering method etc. on the 1st electrode 2.Then, passed in electronics
Light absorbing zone 4 is formed using rubbing method etc. on defeated layer 3.Then, the 2nd electrode 5 is formed on light absorbing zone 4.Then, by the 1st cloth
Line 7 is connected with the 1st electrode 2, and the 2nd wiring 8 is connected with the 2nd electrode 5.Finally, connected up by a part for the 1st wiring 7 and the 2nd
8 part is taken out in the state of outside, forms seal 6, so as to substrate 1, the 1st electrode 2, electron transfer layer 3, light be inhaled
The electrode 5 of layer 4 and the 2nd is received to be sealed.Operation more than, just can obtain solar cell 100.
Each inscape with regard to solar cell 100 is specifically described below.
The ＞ of ＜ substrates 1
Subsidiary inscape is each layer that substrate 1 remains solar cell 100.As the material of substrate 1, can make
With transparent material such as glass substrate or plastic base.As plastic base, it is also possible to use plastic sheeting.In addition,
When 1st electrode 2 has sufficient intensity, because just can keep each layer by means of the 1st electrode 2, thus base can be set
Plate 1.
The ＞ of the 1st electrodes of ＜ 2
1st electrode 2 is conductive.In addition, the 1st electrode 2 has translucency.1st electrode 2 for example have make visible ray with
And the characteristic that near infrared light is passed through.1st electrode 2 can for example be come using materials such as transparent and conductive metal oxides
Formed.Transparent and conductive metal oxide is, for example, indium-tin composite oxides, is doped with the tin oxide of antimony, adulterates
The tin oxide of fluorine, it is doped with boron, aluminium, gallium, the zinc oxide of indium or their compound.
In addition, the 1st electrode 2 can be formed using the pattern of opaque material and the permeable light of design.1st electrode 2
The metal level that there is following pattern as the pattern of permeable light can be included：Such as wire (striated), wave wire, lattice
Sub- shape (latticed), the pattern of multiple fine this shapes of through hole regularly or is brokenly arranged with, or makes this
A little patterns and the pattern that region as figuratum region does not invert.If metal level has these patterns, light can
With through the part in the absence of electrode material.As opaque electrode material, can for example include platinum, gold, silver, copper, aluminium,
Rhodium, indium, titanium, iron, nickel, tin, zinc or the alloy containing any one among them.In addition, as electrode material, it is also possible to
Use conductive carbon material.
The transmissivity of the light of the 1st electrode 2 is, for example, more than 50%.The transmissivity of the light of the 1st electrode 2 can also for 80% with
On.The wavelength of the light that should be passed through depends on the absorbing wavelength of light absorbing zone 4.The thickness of the 1st electrode 2 is for example in 1nm~1000nm
In the range of.
The ＞ of ＜ electron transfer layers 3
Electron transfer layer 3 includes semiconductor.Electron transfer layer 3 can also be the semiconductor of more than 3.0eV containing band gap.It is logical
The semiconductor that uses band gap for more than 3.0eV is crossed to form electron transfer layer 3, visible ray and infrared light can be made until
Light absorbing zone 4.As the example of semiconductor, organic or inorganic n-type semiconductor can be included.
As organic n-type semi-conductor, imide compound, naphtoquinone compounds and fullerene and its derivative can be included
Thing etc..In addition, as inorganic semiconductor, such as the oxide or perofskite type oxide of metallic element can be used.As
The oxide of metallic element, can for example include Cd, Zn, In, Pb, Mo, W, Sb, Bi, Cu, Hg, Ti, Ag, Mn, Fe, V, Sn,
The oxide of Zr, Sr, Ga, Cr.As more specifically example, TiO can be included2.As the example of perofskite type oxide,
SrTiO can be included3、CaTiO3。
In addition, electron transfer layer 3 can also be formed by material of the band gap more than 6eV.Thing as band gap more than 6eV
Matter, can include the alkali gold of halide, the magnesia of the alkali metal such as lithium fluoride and calcirm-fluoride or alkaline-earth metal etc
Category oxide, silica etc..In the case, in order to ensure the electron-transporting of electron transfer layer 3, it is also possible to which electronics is passed
The thickness of defeated layer 3 is for example set as below 10nm.
Electron transfer layer 3 can both be formed by being laminated identical material, or can also be different by interaction cascading
Material formed.
The ＞ of ＜ light absorbing zones 4
Light absorbing zone 4 includes to have uses composition formula AMX3The compound of the perovskite structure of expression.A is 1 valency cation.
As the example of A, 1 valency cation of alkali metal cation or organic cation etc can be included.Further specifically
Say, methyl ammonium cation (CH can be included3NH3 +), carbonamidine cation (NH2CHNH2 +), caesium cation (Cs+).M is divalent
Cation.It is the divalent cation of transition metal or the 13rd race's element to the 15th race's element as the example of M.It is further specific
Ground say, Pb can be included2+、Ge2+、Sn2+.X is the 1 valency anion such as halide anion.The respective site of A, M, X can also be by
Different kinds of ions is occupied.As the specific example of the compound with perovskite structure, CH can be included3NH3PbI3、
NH2CHNH2PbI3、CH3CH2NH3PbI3、CH3NH3PbBr3、CH3NH3PbCl3、CsPbI3、CsPbBr3Deng.
The thickness of light absorbing zone 4 is, for example, 100nm~1000nm.Light absorbing zone 4 can using based on solution rubbing method,
Or vapour deposition method etc. is formed.
The ＞ of the 2nd electrodes of ＜ 5
2nd electrode 5 is conductive.In addition, the 2nd electrode 5 and the no Ohmic contact of light absorbing zone 4.Furthermore, the 2nd electrode 5
With the block for the electronics from light absorbing zone 4.The so-called block for the electronics from light absorbing zone 4, refer to
Only make the hole in the generation of light absorbing zone 4 by the property without passing through electronics.The material having the quality that is that light is inhaled
Receive the fermi level of layer 4 material higher than the energy level of its conduction band upper end.As specific material, gold, Graphene can be included
Deng carbon material.
The ＞ of ＜ seals 6
Seal 6 hardly passes through vapor.The water vapo(u)r transmission of seal 6 for example can also be 1000cm3
(STP)·cm/(cm2·sec·cmHg×109) below.The water vapo(u)r transmission of seal 6 can also be 100cm3(STP)·
cm/(cm2·sec·cmHg×109) below.Additionally, so-called cm3(STP) refer to, that volume is converted into the body after standard state
Product.Seal 6 can also will not pass through vapor completely.In addition, seal 6 has translucency.
As seal 6, for example, can use and the films such as metal or oxide are formed with transparent resin film
Laminate film.By being designed as such composition, can obtain with translucency and hardly through the spy of vapor
Property.Laminate film can also have thermoplasticity.
As the specific example of transparent thin-film material, resin material can be included.More specifically, can for example arrange
Enumerate polyethylene, polystyrene, vinyl chloride, butyl rubber (butylene rubber).Be formed as on transparent film
The material of film, can include the carbide such as the oxides such as aluminum oxide, silica, carborundum, and the gold such as aluminium, copper, titanium
Category.
The method of sealing is for example as described below.First, respectively by the 1st electrode 2 and the 1st the 7 and the 2nd electrode 5 of wiring and the
2 wirings 8 are attached with silver paste or soft solder etc..The wiring 8 of 1st wiring the 7 and the 2nd can for example use copper cash.In this shape
Under state, by the sandwich being laminated by the electrode 5 of substrate 1 to the 2nd picked up with laminate film come.In the wiring 8 of the 1st wiring the 7 and the 2nd
It is taken out in the state of the outside of laminate film, heats and make to be bonded together between film.Thus, it is possible to form close
Envelope body 6.
Gas is contained within the space sealed by seal 6.The gas with volume fraction, containing more than 5% oxygen, and
Water containing below 300ppm.The gas can also mainly contain inactive gas.Here, so-called " main ", refers to volume
Fraction is calculated as more than 50%.The gas in space sealed by seal 6 more contains inactive gas, thus such as formula
(1) redox reaction of~formula (3) etc becomes to be difficult to the generation in solar cell 100.Therefore, it can stably use
Solar cell 100.As the specific example of inactive gas, nitrogen, rare gas can be included.As the tool of rare gas
Style, can include argon, helium.The gas in space sealed by seal 6 can both contain 10% with volume fraction
Oxygen above, it is also possible to contain more than 15% oxygen.The oxygen concentration in space sealed by seal 6 can also be 100%.Separately
Outward, the gas in space that is sealed by seal 6 both can be containing below 130ppm water, it is also possible to containing below 30ppm
Water.The gas in space sealed by seal 6 is, for example, dry air.
As the method that is controlled of constituting of the gas in the space to being sealed by seal 6, can include and set
Being set under the atmosphere of target composition carries out the sealing of solar cell 100, and gas is enclosed in the sealing of solar cell 100,
In the sealing of solar cell 100 gas is enclosed after perforate on seal 6 and again by hole plug etc..
(the 2nd implementation method)
The solar cell 100 of the implementation method of solar cell 101 and the 1st of present embodiment is in the form of seal
It is different.
Solar cell 101 is illustrated below.With with regard to solar cell 100 carried out explanation inscape
Identical function and the inscape for constituting mark common symbol and omit the description.
The solar cell 101 of present embodiment is as shown in Fig. 2 have substrate 1, the 1st electrode 2, electron transfer layer 3, light
Absorbed layer 4, the 2nd electrode 5 and seal 16.
Seal 16 is located on substrate 1.Seal 16 is by a part for the 1st electrode 2, electron transfer layer 3, light absorbing zone 4
And the 2nd electrode 5 sealed.
Then, the basic action effect with regard to the solar cell 101 of present embodiment is illustrated.Solar cell
101 work is same with solar cell 100.
In addition, set on substrate 1 by by seal 16, compared with solar cell 100, can be by solar cell
101 forms for being set as more save space.
The solar cell 101 of present embodiment can for example be made using following method.In solar cell
In 101 manufacture method, until the operation for forming the 2nd electrode 5 is the operation same with the manufacture method of solar cell 100,
Thus illustrated to be omitted.After the 2nd electrode 5 is formed, the 2nd wiring 8 is attached with the 2nd electrode 5.Finally, inciting somebody to action
A part for 1st electrode 2 and a part for the 2nd wiring 8 are partly taken out in the state of outside, form seal 16, so that
The remainder of the 1st electrode 2, electron transfer layer 3, the electrode 5 of light absorbing zone 4 and the 2nd are sealed, it is hereby achieved that too
Positive energy battery 101.
The inscape with regard to solar cell 101 is specifically described below.
The ＞ of ＜ seals 16
Seal 16 hardly passes through vapor.The water vapo(u)r transmission of seal 16 for example can also be 1000cm3
(STP)·cm/(cm2·sec·cmHg×109) below.The water vapo(u)r transmission of seal 16 can also be 100cm3
(STP)·cm/(cm2·sec·cmHg×109) below.Seal 16 can also will not pass through vapor completely.In addition, sealing
Body 16 has translucency.
As seal 16, it is possible to use by glass, resin etc. for example formed as box like component.
The method of sealing is for example as described below.First, the 2nd wiring 8 is attached with the 2nd electrode 5.In this case,
Seal 16 is covered on the sandwich being laminated by the electrode 5 of substrate 1 to the 2nd so that a part for the 1st electrode 2 and
A part for 2nd wiring 8 is exposed in the outside of seal 16.The adhering method of substrate 1 and seal 16 is as described below.For example,
Low-melting glass is pre-coated with the marginal portion of seal 16.After seal 16 is covered on above-mentioned sandwich, make
The partial melting of low-melting glass is attached with, it is possible thereby to make seal 16 integrated with substrate 1.Alternatively, it is also possible to by means of
Ultraviolet curable resin and make seal 16 integrated with substrate 1.In the case, applied in the marginal portion of seal 16 in advance
Cloth ultraviolet curable resin, seal 16 is covered on above-mentioned sandwich, then irradiation ultraviolet radiation.
Additionally, in a same manner as in the first embodiment, it is also possible to be designed as the form that the 1st wiring 7 is connected with the 1st electrode 2.
The constituting for the gas in space sealed by seal 16 and constituting for the gas in the space sealed by seal 6
Equally.
(the 3rd implementation method)
The solar cell 200 of present embodiment moisture adsorbent is arranged at by seal seal space in this
Solar cell 100 on point from the 1st implementation method is different.
Solar cell 200 is illustrated below.With with regard to solar cell 100 carried out explanation inscape
Identical function and the inscape for constituting mark common symbol and omit the description.
The solar cell 200 of present embodiment is as shown in figure 3, have the 1st electrode 2, electron transfer layer 3, light absorbing zone
4th, the 2nd electrode 5 and seal 6.
Moisture adsorbent 9 is located in the space sealed by seal 6.In the present embodiment, moisture adsorbent 9 is configured
On the face opposite with the 2nd electrode 5 of seal 6.In addition, there is gas in the space sealed by seal 6.By sealing
Gas in the space of the sealing of body 6 mainly contains inactive gas, contains the oxygen that more than 5% is calculated as with volume fraction.
Solar cell 200 can also have substrate 1.In the case, as shown in figure 3, the 1st electrode 2 is configured at substrate 1
On.
Then, the basic action effect with regard to the solar cell 200 of present embodiment is illustrated.Solar cell
200 work is same with solar cell 100.
In addition, by setting moisture adsorbent 9 in the space sealed by seal 6, can reduce and be sealed by seal 6
Space in amount of moisture.Therefore, with solar cell 100 it is also possible to suppress the conversion efficiency of solar cell 200 with
The process of time and reduce, thus can be improved the durability of solar cell 200.
Solar cell 200 can be made using the method same with solar cell 100.Moisture adsorbent 9
Inner side, the first-class place of the 2nd electrode 5 of the laminate film for constituting seal 6 can be such as arranged on.
The inscape with regard to solar cell 200 is specifically described below.
The ＞ of ＜ moisture adsorbents 9
The moisture in space that moisture adsorbent 9 pairs is sealed by seal 6 is adsorbed.Moisture adsorbent 9 is, for example, to protect
Hold the sealing gasket of the powder of adsorption moisture.As the powder of adsorption moisture, can include metal simple-substance, metal oxide,
Or the powder such as the carbonate of metal.As metal, for example, can include alkali metal, alkaline-earth metal.As alkali metal
Specific example, can include sodium, potassium.As the specific example of alkaline-earth metal, calcium, magnesium can be included.
(the 4th implementation method)
The solar cell 300 of present embodiment further have hole transmission layer on this point with the 1st implementation method
Solar cell 100 it is different.
Solar cell 300 is illustrated below.With with regard to solar cell 100 carried out explanation inscape
Identical function and the inscape for constituting mark common symbol and omit the description.
The solar cell 300 of present embodiment is as shown in figure 4, have the 1st electrode 32, electron transfer layer 3, light absorbing zone
4th, hole transmission layer 10, the 2nd electrode 35 and seal 6.
Hole transmission layer 10 is configured between the electrode 35 of light absorbing zone 4 and the 2nd.Seal 6 passes the 1st electrode 32, electronics
Defeated layer 3, light absorbing zone 4, the electrode 35 of hole transmission layer 10 and the 2nd are sealed.
Solar cell 300 can also have substrate 31.In the case, as shown in figure 4, the 1st electrode 32 is configured at base
On plate 31.
Then, the basic action effect with regard to the solar cell 300 of present embodiment is illustrated.
If making light irradiation on solar cell 300, light absorbing zone 4 absorbs light, so as to produce the electronics being excited
And hole.The electronics that this is excited is moved to electron transfer layer 3.On the other hand, the hole for being produced in light absorbing zone 4 passes to hole
Defeated layer 10 is moved.Electron transfer layer 3 is connected with the 1st electrode 32, and hole transmission layer 10 is connected with the 2nd electrode 35, the He of the 1st electrode 32
2nd electrode 35 respectively with the external electrical connections of seal 6.Therefore, it can from solar cell 300, using the 1st electrode 32 as negative
Pole, the 2nd electrode 35 is taken out into electric current as positive pole.
In the present embodiment, it is also possible to obtain effect in a same manner as in the first embodiment.
In addition, in the present embodiment, being provided with hole transmission layer 10.Therefore, the 2nd electrode 35 is for from light absorbing zone
4 electronics can also not have block.Therefore, the width of the material selection of the 2nd electrode 35 is wider.
In addition, solar cell 300 has seal 6.The gas existed in the space sealed by seal 6 contain with
Volume fraction is calculated as more than 5% oxygen, and the concentration of the water in the gas is calculated as below 300ppm with volume fraction.Therefore, the sun
Energy battery 300 has durability higher.Its reason is described as follows.
In the hole transmission layer 10 of solar cell 300, by the addition of oxidant, make the oxidation of hole mobile material
Body and Reduction Body coexist.Due to the presence of the oxysome of hole mobile material, the cavity transmission ability of hole transmission layer 10 is able to
Rise.The energy level of the valence band of hole mobile material is in the position higher than the oxidation-reduction potential of water.
Therefore, in presence of water, in hole transmission layer 10, there is the oxidation reaction of water as shown below, from
And produce oxygen, proton and electronics.
2H2O→O2+4H++4e- (1)
For example in the case where hole mobile material is Spiro-OMeTAD, in the effect of the electronics produced by the reaction
Under, there is following reaction.
Spiro-OMeTAD++e-→Spiro-OMeTAD (4)
Formula (1), the result of the reaction of formula (4), the oxysome of hole mobile material are reduced.Therefore, hole transmission layer 10
Cavity transmission ability reduction.
It is more in the ambient water of hole transmission layer 10 or oxygen is fewer, formula according to formula (1) and Le Chatelier's principle
(1) reaction is got over and is susceptible to.In gas in the space sealed by seal 6, oxygen with volume fraction contain 5% with
On, the concentration of water is calculated as below 300ppm with volume fraction.Therefore, in solar cell 300, generating polynomial (1) can be reduced
Reaction possibility.Therefore, in solar cell 300, the hole transport material contained in hole transmission layer 10 can be suppressed
The oxysome of material is reduced.Thus, it is possible to suppress the conversion efficiency of solar cell 300 process over time and reduce, because
And can be improved the durability of solar cell 300.
Each inscape with regard to solar cell 300 is specifically described below.Additionally, for solar cell
100 common key elements, are illustrated to be omitted.
The electrodes 32 of ＜ the 1st and the ＞ of the 2nd electrode 35
Due to using hole transmission layer 10 in the present embodiment, thus the 2nd electrode 35 is for the electricity from light absorbing zone 4
Son can also not have block.That is, the material of the 2nd electrode 35 can also carry out Ohmic contact with light absorbing zone 4
Material.Therefore, the 2nd electrode 35 can also be formed as with translucency.
At least one party among 1st electrode 32 and the 2nd electrode 35 can also have translucency, it is also possible to the 1st embodiment party
The 1st electrode 2 in formula is similarly constituted.One side of the 1st electrode 32 and the 2nd electrode 35 can also not have translucency.In this feelings
Under condition, the electrode without translucency can not also form the region in the absence of electrode material.
The ＞ of ＜ substrates 31
Substrate 31 can be designed as the composition same with the substrate 1 in the 1st implementation method.In addition, having in the 2nd electrode 35
In the case of translucency, it is possible to use opaque material forms substrate 31.It is, for example possible to use metal, ceramics or thoroughly
The less resin material of the property crossed.
The ＞ of ＜ hole transmission layers 10
Hole transmission layer 10 is made up of organic matter or inorganic semiconductor etc..Hole transmission layer 10 both can be by stacking
Identical constituent material is formed, or can also be formed by the different material of interaction cascading.
Used as organic matter, can include be contained within the aniline of tertiary amine, triphenylamine derivative in skeleton and contain thiophene
PEDOT compounds of structure etc..Molecular weight is not particularly limited, or polymer body.Formed using organic matter
In the case of hole transmission layer 10, the thickness of hole transmission layer 10 can be 1nm~1000nm, or 100nm~
500nm.As long as the thickness of hole transmission layer 10 is within the range, it is possible to show sufficient hole transport ability.As long as in addition,
The thickness of hole transmission layer 10 is within the range, it is possible to maintain low resistance, it is thus possible to expeditiously carry out light generating.
As inorganic semiconductor, it is possible to use CuO, Cu2The p-type semiconductors such as O, CuSCN, molybdenum oxide and nickel oxide.
In the case of forming hole transmission layer 10 using inorganic semiconductor, the thickness of hole transmission layer 10 can be 1nm~1000nm,
Can be 10nm~50nm.As long as the thickness of hole transmission layer 10 is within the range, it is possible to show sufficient hole transport
Property.As long as in addition, the thickness of hole transmission layer 10 is within the range, it is possible to maintain low resistance, it is thus possible to expeditiously enter
Row light generates electricity.
As the forming method of hole transmission layer 10, rubbing method or print process can be used.As rubbing method, for example may be used
To include doctor blade method, stick coating method, spraying process, Dipcoat method, method of spin coating.As print process, for example, can include
Silk screen print method.Hole transmission layer 10 is made alternatively, it is also possible to as needed, be designed as mixing multiple material, is then carried out
Pressurize or burn till.In the case where the material of hole transmission layer 10 is for organic low molecular body or inorganic semiconductor, it is also possible to
Made using vacuum vapour deposition etc..
Hole transmission layer 10 can also contain supporting electrolyte and solvent.
As supporting electrolyte, ammonium salt, alkali metal salt etc. can be included.As ammonium salt, for example, can include chlorine high
Sour TBuA, tetraethylammonium hexafluorophosphate, imidazole salts and pyridiniujm (pyridinium salt).As alkali metal
Salt, can include lithium perchlorate and tetrafluoride boron potassium etc..
The solvent contained in hole transmission layer 10 can also be the excellent solvent of ionic conductivity.As hole transmission layer 10
In the solvent that contains, water solvent and organic solvent can be used.If organic solvent be used as in hole transmission layer 10
The solvent for containing, then can be such that solute more stabilizes.As specific example, tert .-butylpyridine, pyridine, N- can be included
The heterocyclic compound solvent such as methyl pyrrolidone.
In addition, as solvent, both can be used alone ionic liquid, or can also in another solvent hybrid ionic
Liquid is used.Ionic liquid has that volatility is low, anti-flammability such advantage high.
As ionic liquid, for example, can include imidazoles system, the pyrroles such as 1- ethyl-3-methylimidazole four cyano borates
Pyridine system, ester ring type amine system, aliphatic amine system and azo amine system ionic liquid.
These supporting electrolytes and solvent have the stabilized effect in hole made in hole transmission layer 10.
(the 5th implementation method)
The solar cell 400 of present embodiment further have porous layer 11 on this point with the 1st implementation method
Solar cell 100 it is different.
Solar cell 400 is illustrated below.With with regard to solar cell 100 carried out explanation inscape
Identical function and the inscape for constituting mark common symbol and omit the description.
The solar cell 400 of present embodiment is as shown in figure 5, have the 1st electrode 2, electron transfer layer 3, porous layer
11st, light absorbing zone 4, the 2nd electrode 5 and seal 6.
Porous layer 11 is configured at the position being in contact with electron transfer layer 3 in light absorbing zone 4.Porous layer 11 is included
Porous plastid.
Hole in porous layer 11 is communicated to the Porous being in contact with electron transfer layer 3 from the upper end of porous layer 11
The lower end of layer 11.Thus, the material of light absorbing zone 4 is filled with the hole of porous layer 11, can reach the table of electron transfer layer 3
Face.Therefore, light absorbing zone 4 and electron transfer layer 3 are in contact, it is thus possible to directly carry out giving and accepting for electronics.
Solar cell 400 can also have substrate 1.In the case, as shown in figure 5, the 1st electrode 2 is configured at substrate 1
On.
Then, the basic action effect with regard to the solar cell 400 of present embodiment is illustrated.Solar cell
400 work is same with solar cell 100.In the present embodiment, it is also possible to obtain effect in a same manner as in the first embodiment
Really.
In addition, by setting porous layer 11 on electron transfer layer 3, can obtain can be on porous layer 11 easily
Form the effect of light absorbing zone 4.The material of light absorbing zone 4 is invaded in the hole of porous layer 11, so that porous layer 11 turns into
The base station of light absorbing zone 4.Therefore, the material of light absorbing zone 4 is difficult to that incompatible or cohesion occurs on the surface of porous layer 11
Situation.Therefore, it can for light absorbing zone 4 to be formed as uniform film.
The solar cell 400 of present embodiment can be made using the method same with solar cell 100.It is many
Hole matter layer 11 is formed using rubbing method etc. on electron transfer layer 3.
Each inscape with regard to solar cell 400 is specifically described below.
The ＞ of ＜ porous layers 11
Porous layer 11 turns into base station when forming light absorbing zone 4.Porous layer 11 will not hinder the light of light absorbing zone 4 to inhale
Receive and moved from light absorbing zone 4 to the electronics of electron transfer layer 3.
Porous layer 11 includes porous plastid.As porous plastid, for example, can include insulating properties or semiconductor
The porous plastid that particle is formed by connecting.As the particle of insulating properties, it is possible to use the particle such as aluminum oxide, silica.As partly leading
Body particle, it is possible to use inorganic semiconductor particle.As inorganic semiconductor, it is possible to use the oxide of metallic element, perovskite
Type oxide, sulfide and metal chalcogenide compound.As the example of the oxide of metallic element, can include Cd, Zn,
The oxide of In, Pb, Mo, W, Sb, Bi, Cu, Hg, Ti, Ag, Mn, Fe, V, Sn, Zr, Sr, Ga, Si, Cr.As more specifically gold
Belong to the example of the oxide of element, TiO can be included2.As the example of perofskite type oxide, SrTiO can be included3、
CaTiO3.As the example of sulfide, CdS, ZnS, In can be included2S3、PbS、Mo2S、WS2、Sb2S3、Bi2S3、ZnCdS2、
Cu2S.As the example of metal chalcogenide compound, CdSe, In can be included2Se3、WSe2、HgS、PbSe、CdTe。
The thickness of porous layer 11 can be 0.01 μm~10 μm, or 0.1 μm~1 μm.In addition, porous layer
11 surface roughness values can be more than 10, or more than 100.The surface roughness values of object can be by inciting somebody to action
The real area of object is obtained divided by the projected area of object.Additionally, so-called projected area, refers to use up from front irradiation
During object, the area of the shade formed below.So-called real area, refers to the actual surface area of object.Real area can be with
Come by projected area and the thickness volume obtained and the specific surface area and bulk density of the material for constituting object from object
Calculate.
(the 6th implementation method)
The solar cell 500 of present embodiment further have porous layer on this point with the 4th implementation method
Solar cell 300 is different.In addition, solar cell 500 further have hole transmission layer on this point with the 5th embodiment party
The solar cell 400 of formula is different.
Solar cell 500 is illustrated below.With entering with regard to solar cell 300 and solar cell 400
The inscape identical function of illustrating of the going symbol common with the inscape mark for constituting simultaneously is omitted the description.
The solar cell 500 of present embodiment is as shown in fig. 6, have the 1st electrode 32, electron transfer layer 3, porous layer
11st, light absorbing zone 4, hole transmission layer 10, the 2nd electrode 35 and seal 6.
Solar cell 500 can also have substrate 31.In the case, as shown in fig. 6, the 1st electrode 32 is configured at base
On plate 31.
Then, the basic action effect with regard to the solar cell 500 of present embodiment is illustrated.Solar cell
500 work is same with solar cell 300 and solar cell 400.In the present embodiment, it is also possible to obtain and the 3rd
Implementation method and the same effect of the 4th implementation method.
The solar cell 500 of present embodiment can use same with solar cell 300 and solar cell 400
Method made.
Additionally, the solar cell of the 3rd implementation method may be designed in and add on the solar cell of the 2nd implementation method
Plus the composition of moisture adsorbent 9.The solar cell of the 4th implementation method may be designed in the solar energy in the 2nd implementation method
The composition of hole transmission layer 10 is added on battery.The solar cell of the 5th implementation method may be designed in the 2nd implementation method
Solar cell on add porous layer 11 composition.The solar cell of the 6th implementation method may be designed in real the 2nd
Apply the composition that hole transmission layer 10 and porous layer 11 are added on the solar cell of mode.Even if in these cases, also may be used
To obtain the effect same with the solar cell of the 2nd implementation method.In addition, in the 4th implementation method to the 6th implementation method,
Moisture adsorbent 9 can also be set in the space sealed by seal 6.By with moisture adsorbent 9, easily will be by sealing
The concentration of the water in gas in the space of the sealing of body 6 maintains below 300ppm with volume fraction.Therefore, it can further
Suppress the decomposition of light absorbing material and hole mobile material.
(embodiment)
Below by embodiment, the present invention is specifically described.Produce embodiment 1~8 and comparative example 1~5
Solar cell, and its characteristic is evaluated.Evaluation result is concluded and is shown in table 1.
[embodiment 1]
Produce has mutually isostructural solar cell with the solar cell 500 shown in Fig. 6.Each inscape is as follows
It is described.
Substrate 31：Glass substrate (thickness 1mm)
1st electrode 32：Fluorin doped SnO2Layer (10 Ω of sheet resistance/sq.)
Electron transfer layer 3：Titanium oxide (thickness 30nm)
Porous layer 11：Porous titanium oxide
Light absorbing zone 4：CH3NH3PbI3
Hole transmission layer 10：Spiro-OMeTAD (production of Merck companies)
2nd electrode 35：Golden (thickness 80nm)
Seal 6：Laminate film (Mitsubishi Gas Chemical produces PTS bags of PB180250P)
The wiring 8 of 1st wiring the 7, the 2nd：Copper cash
The solar cell of embodiment 1 is made using following method.
The use of thickness is the glass substrate (NHTechno production) of 1mm as substrate 31.On the substrate 31, it is configured with
As the Fluorin doped SnO of the 1st electrode 322Layer.
On the 1st colelctor electrode 32, it is about the titanium oxide layer of 30nm as electron transfer layer to form thickness using sputtering method
3。
Then, the high-purity mangesium oxide titanium powder for making average 1 particle diameter be 20nm is scattered in ethyl cellulose, so as to make
Go out silk-screen printing titania slurry.Titania slurry is coated with electron transfer layer 3 and it is dried.And then at 500 DEG C,
Carry out burning till for 30 minutes in air, so as to form the Porous titanium oxide layer i.e. porous layer 11 that thickness is 0.2 μm.
Then, prepare to contain PbI with the concentration of 3mol/L2And CH is contained with the concentration of 3mol/L3NH3The dimethyl sulfoxide of I
(DMSO) solution.Then, using rotary coating by the solution coating on porous layer 11.Then, it is right on 130 DEG C of hot plate
Substrate 31 is heat-treated, so as to obtain as the CH with perovskite structure of light absorbing zone 43NH3PbI3Layer.Light absorbs
The thickness of layer 4 is 300nm.
Prepare to contain Spiro-OMeTAD with the concentration of 60mmol/L, contained double (trifluoro sulphonyl) with the concentration of 30mmol/L
Imine lithium (LiTFSI), tert .-butylpyridine (tBP) is contained with the concentration of 200mmol/L, Co networks are contained with the concentration of 1.2mmol/L
Compound (FK209：Dyesol companies produce) chlorobenzene solution, be coated on light absorbing zone 4 using rotary coating, so as to make
Make hole transmission layer 10.The thickness of hole transmission layer 10 is 100nm.Then, the gold of 80nm is deposited with hole transmission layer 10,
Set it to the 2nd electrode 35.
Later operation is carried out in glove box.In glove box, dew point is set as -60 DEG C, and make air with
The flow velocity of 200ml/min is flowed into.Here, air mixes nitrogen by with 20% volume ratio mixture of oxygen, with 80% volume ratio
Gas makes.Bag moisture adsorbent calciferous is configured with the 2nd electrode 35.Then, the 7 and the 1st electrode 32 is connected up by the 1st
Connection, the 2nd wiring 8 is connected with the 2nd electrode 35.From using laminate film up and down in the way of to sandwich the wiring 8 of the 1st wiring the 7 and the 2nd
Covering.End to laminate film at 200 DEG C is heated, and it is melted and is sealed, so as to form seal 6.
[embodiment 2~6 and comparative example 1~4]
In the solar cell of embodiment 1, by adjusting the dew point in glove box and big air-flow as shown in table 1
Enter amount to change the moisture concentration and oxygen concentration in the space sealed by seal 6, so as to produce embodiment 2~6 and
The solar cell of comparative example 1~4.Additionally, for embodiment 3~6, comparative example 2 and comparative example 4, with the amount shown in table 1 to
Nitrogen is flowed into glove box.
[embodiment 7,8 and comparative example 5]
In each inscape of solar cell, light absorbing zone 4 is with (CH (NH2)2)0.85(CH3NH3)0.15Pb
(I0.85Br0.15)3The perovskite-type compounds of expression, in addition to this point, produce has with the solar cell of embodiment 1
The embodiment 7,8 and the solar cell of comparative example 5 for equally constituting.
The light absorbing zone 4 of the solar cell of embodiment 7,8 and comparative example 5 is made using following method.Light
Operation beyond absorbed layer 4 similarly to Example 1, thus is illustrated to be omitted.
Preparation contains PbBr with the concentration of 0.45mol/L2, CH contained with the concentration of 0.45mol/L3NH3Br, with
The concentration of 2.55mol/L contains PbI2, CH (NH are contained with the concentration of 2.55mol/L2)2Dimethyl sulfoxide (DMSO) solution of I.So
Afterwards, using rotary coating by the solution coating on porous layer 11.Then, heat is carried out to substrate 31 on 130 DEG C of hot plate
Treatment, so as to obtain as (CH (the NH with perovskite structure of light absorbing zone 42)2)0.85(CH3NH3)0.15Pb
(I0.85Br0.15)3Layer.The thickness of light absorbing zone 4 is 500nm.
Seal 6 is formed using operation similarly to Example 1, so as to produce the solar cell of embodiment 7.To hand
In casing, air is flowed into the flow velocity of 180ml/min, and oxygen is flowed into the flow velocity of 20ml/min, aside from these points, used
Operation similarly to Example 1 forms seal 6, so as to produce the solar cell of embodiment 8.To in glove box, with
The flow velocity of 200ml/min flows into nitrogen to replace air, in addition to this point, forms close using operation similarly to Example 1
Envelope body 6, so as to produce the solar cell of comparative example 5.
＜ Te Evaluation valencys ＞
[composition analysis of gas]
Moisture concentration in the gas in space sealed by seal 6 is measured using following method.For reality
Example 1, embodiment 6 and comparative example 2 are applied, API-MS measure is carried out.For embodiment 2, comparative example 1 and comparative example 4, base is carried out
The measure of device is determined in Karl Fischer.For embodiment 3~5,7,8, comparative example 3 and comparative example 5, by solar-electricity
The dew point in glove box, air influx, nitrogen influx and oxygen influx when pond makes are calculated.
In glove box when the concentration of the oxygen in the gas in space sealed by seal 6 is made by solar cell
Dew point, air influx, nitrogen influx and oxygen influx are calculated.Additionally, the gas in the space sealed by seal 6
In, beyond deoxygenation and water, also contain nitrogen.In addition, the moisture concentration and oxygen concentration shown in table 1 are represented with volume fraction.
[conversion efficiency measure]
It is 100mW/cm to each solar cell irradiation illumination using solar simulator2Light.To each solar cell
I-E characteristic is measured, and obtains the conversion efficiency after stabilizing, and sets it to initial stage conversion efficiency.In addition, first
After the measure of phase conversion efficiency, by the keeping of each solar cell being set as in 85 DEG C of thermostat, with carry out 72 hours plus
Heat test.The conversion efficiency of each solar cell after the measure of I-E characteristic obtains heat run.Heating is tried
Conversion efficiency after testing is calculated relative to the ratio of initial stage conversion efficiency as the sustainment rate of each solar cell.
Table 1
According to the result of table 1, in the solar cell of embodiment 1~8, more than 82% can also be obtained after heat run
Sustainment rate.On the other hand, in the solar cell of comparative example 1~5, sustainment rate is only below 62%.
For example, being to use CH to light absorbing zone 43NH3PbI3The perovskite-type compounds and oxygen concentration of expression are equal and are
20% embodiment 1, embodiment 2 are compared with comparative example 1, comparative example 3.It is the implementation of below 130ppm in moisture concentration
In example 1, embodiment 2, sustainment rate is improved, and is more than 97%.On the other hand, it is the comparative example 1 of 380ppm in moisture concentration
In, sustainment rate reduction, is 62%, and in moisture concentration is for the comparative example 3 of 8600ppm, sustainment rate is very low, is 3%.Thus may be used
Know：It is dense by reducing the moisture in the space sealed by seal in the case of oxygen concentration fully height in solar cell
Degree, can improve the durability of solar cell.
In addition, being to use CH to light absorbing zone 43NH3PbI3The perovskite-type compounds and moisture concentration of expression are 2~5ppm
Embodiment 1, embodiment 3~5 compares with comparative example 2.In the embodiment 3 that oxygen concentration is 5%, it is also possible to obtain
82% sustainment rate, in embodiment 1, embodiment 4, the embodiment 5 that oxygen concentration is more than 10%, can obtain more than 95%
Sustainment rate.On the other hand, in comparative example 2, oxygen concentration is 3%, and sustainment rate is also reduced, and is 37%.It can thus be appreciated that：It is dense in moisture
In the case that degree is substantially low, by improving oxygen concentration, the durability of solar cell can be improved.
In addition, knowable to the result of embodiment 7,8 and comparative example 5：It is with (CH (NH in light absorbing zone 42)2)0.85
(CH3NH3)0.15Pb(I0.85Br0.15)3In the case of the perovskite-type compounds of expression, when moisture concentration is substantially low, by carrying
High oxygen concentration, it is also possible to improve the durability of solar cell.
Result according to more than, by setting seal in solar cells, the gas in space sealed by seal 6
Body contains more than 5% oxygen with volume fraction, and the concentration of the water in the gas is set as into 300ppm with volume fraction
Hereinafter, just it is improved the durability of solar cell.
Symbol description：
1st, 31 substrate
2nd, 32 the 1st electrode
3 electron transfer layers
4 light absorbing zones
5th, 35 the 2nd electrode
6th, 16 seal
7 the 1st wirings
8 the 2nd wirings
9 moisture adsorbents
10 hole transmission layers
11 porous layers
100th, 101,200,300,400,500 solar cell
Claims (13)
1. a kind of solar cell, it has：
1st electrode；
Electron transfer layer, it is located on the 1st electrode, and contains semiconductor；
Light absorbing zone, it is located on the electron transfer layer, comprising using composition formula AMX3The perovskite-type compounds of expression, in formula,
A is 1 valency cation, and M is divalent cation, and X is halide anion；
2nd electrode, it is located on the light absorbing zone；And
Seal, its by least a portion of the 1st electrode, the electron transfer layer, the light absorbing zone and it is described 2nd electricity
At least a portion of pole is sealed；
Wherein, in the seal and at least a portion, the electric transmission of the 1st electrode sealed by the seal
Layer, between the light absorbing zone and at least a portion of the 2nd electrode there is gas；
The gas is containing aerobic；
The concentration of the oxygen in the gas is calculated as more than 5% with volume fraction；
The concentration of the water in the gas is calculated as below 300ppm with volume fraction.
2. a kind of solar cell, it has：
1st electrode；
Electron transfer layer, it is located on the 1st electrode, and contains semiconductor；
Light absorbing zone, it is located on the electron transfer layer, comprising using composition formula AMX3The perovskite-type compounds of expression, in formula,
A is 1 valency cation, and M is divalent cation, and X is halide anion；
2nd electrode, it is located on the light absorbing zone；
Seal, its by least a portion of the 1st electrode, the electron transfer layer, the light absorbing zone and it is described 2nd electricity
At least a portion of pole is sealed；And
Moisture adsorbent, its at least a portion, institute for being located at the seal and the 1st electrode sealed by the seal
State between at least a portion of electron transfer layer, the light absorbing zone and the 2nd electrode；
Wherein, in the seal and at least a portion, the electric transmission of the 1st electrode sealed by the seal
Layer, between the light absorbing zone and at least a portion of the 2nd electrode there is gas；
The gas is containing aerobic；
The concentration of the oxygen in the gas is calculated as more than 5% with volume fraction.
3. solar cell according to claim 1 and 2, wherein,
The gas further contains inactive gas,
The concentration of the inactive gas in the gas is calculated as more than 50% with volume fraction.
4. solar cell according to claim 2, wherein, the concentration of the water in the gas is calculated as with volume fraction
Below 300ppm.
5. solar cell according to claim 1 and 2, wherein, the concentration of the water in the gas is with volume fraction
For below 130ppm.
6. solar cell according to claim 1 and 2, wherein, the gas and the light absorbing zone are in contact.
7. solar cell according to claim 1 and 2, wherein,
The solar cell further has the hole transmission layer being configured between the light absorbing zone and the 2nd electrode,
The seal further seals the hole transmission layer.
8. solar cell according to claim 7, wherein, the gas and the hole transmission layer are in contact.
9. solar cell according to claim 1 and 2, wherein, further there are Porous in the light absorbing zone
Layer, the porous layer is configured in the position being in contact with the electron transfer layer, and comprising porous plastid.
10. solar cell according to claim 1 and 2, wherein, the semiconductor is titanium oxide.
11. solar cells according to claim 1 and 2, wherein, the 1 valency cation contain selected from ammonium methyl sun from
At least one among son, carbonamidine cation.
12. solar cells according to claim 1 and 2, wherein, the divalent cation contains selected from Pb2+、Ge2+And
Sn2+Among at least one.
13. solar cells according to claim 1 and 2, wherein, the solar cell further has supports described
The substrate of the 1st electrode.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015228332 | 2015-11-24 | ||
| JP2015-228332 | 2015-11-24 |
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| US (1) | US20170149005A1 (en) |
| JP (1) | JP2017103450A (en) |
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| WO2022218089A1 (en) * | 2021-04-13 | 2022-10-20 | 宁德时代新能源科技股份有限公司 | Perovskite solar cell and preparation method therefor, and electrical device |
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2016
- 2016-09-30 CN CN201610874876.8A patent/CN106876586A/en active Pending
- 2016-10-04 JP JP2016196318A patent/JP2017103450A/en active Pending
- 2016-11-16 US US15/352,686 patent/US20170149005A1/en not_active Abandoned
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| JP2017103450A (en) | 2017-06-08 |
| US20170149005A1 (en) | 2017-05-25 |
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