JPS59114815A - Manufacture of semiconductor crystal film - Google Patents

Manufacture of semiconductor crystal film

Info

Publication number
JPS59114815A
JPS59114815A JP57224732A JP22473282A JPS59114815A JP S59114815 A JPS59114815 A JP S59114815A JP 57224732 A JP57224732 A JP 57224732A JP 22473282 A JP22473282 A JP 22473282A JP S59114815 A JPS59114815 A JP S59114815A
Authority
JP
Japan
Prior art keywords
laser beam
polycrystalline silicon
laser
silicon film
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57224732A
Other languages
Japanese (ja)
Inventor
Yasuo Kano
狩野　靖夫
Setsuo Usui
碓井　節夫
Akashi Sawada
沢田　証
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP57224732A priority Critical patent/JPS59114815A/en
Publication of JPS59114815A publication Critical patent/JPS59114815A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02683—Continuous wave laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02678—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To manufacture excellent silicon film of advanced crystallization in comparison to the prior art, by a method wherein two laser beams by dividing one laser beam are partially superposed, and the laser beam having double- humped energy density distribution is constituted. CONSTITUTION:One laser beam is divided into two laser beams B1 and B2, and spots 26 and 27 of the laser beams B1 and B2 are partially overlapped with each other thereby laser beam B3 having double-humped energy density distribution 28 is formed. The laser beam B3 is projected on a polycrystalline silicon film 3 and scanned in arrow M direction thereby the polycrystalline silicon film 3 is made a single crystal. The polycrystalline silicon film 3 on which the laser beam B3 is scanned is melted by the heat energy, but corresponding to the double-humped energy the polycrystalline silicon film 3 after scanned also has double-humped characteristics at a border line 32 between a molten region 33 and a recrystallization region so that a single-crystal silicon region 32 is formed from the center to rear portion and a polycrystalline silicon region 31 is formed from the top end as the border towards both sides of the recrystallization region.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、基板上の多結晶Ｓｉ膜にレーザ・ビームを照
射して、多結晶Ｓｉ膜を結晶化（いわゆる゛単結晶化）
させる半導体結晶膜の製造方法に関する。[Detailed Description of the Invention] Industrial Application Field The present invention irradiates a polycrystalline Si film on a substrate with a laser beam to crystallize the polycrystalline Si film (so-called "single crystallization").
The present invention relates to a method for manufacturing a semiconductor crystal film.

背景技術とその問題点 シリコンの結晶薄膜を作り、この結晶薄膜を用いてシリ
コン半導体装置を製作することが行われて〜・る。この
ため、現在、絶縁基板上にシリコンの結晶薄膜を形成し
たいわゆる８０　Ｉ　（Ｓｉｌ　１ｃｏｎｏｎ　Ｉｎ５
ｕｌａｔｏｒ）の開発が進められており、その製造方法
として、例えばＡｒ　、　ＣＯ２レーザによる結晶化法
、電子ビームによる結晶化法、カーボン・ヒータによる
結晶化法がある。Ａｒ、ＣＯ２レーザによる結晶化法及
び電子ビームによる結晶化法は、第１図の斜視図及び第
２図の断面図に示すように、ガラスまたはシリコン結晶
からなる基板（１）の上に絶縁層としての８１０２層（
２）を形成し、更にその上に多結晶シリコン膜（３）を
設げ、この多結晶シリコン膜（３）の表面にレーザ、ま
たは電子ビームＢを照射し且つ走査することによって、
基板（１）を比較的低温に加熱しながら多結晶シリコン
膜（３）を結晶化させるものである。また、カーボン・
ヒータによる結晶化法は、第３図の斜視図及び第４図の
断面図に示すように、石英またはシリコン基板（５）の
よｋＳ１０２層（６）、多結晶シリコン膜Ｃ力、８ｉ０
２層（６）、８１３Ｎ４層（８）を順次被着し、基［（
５）の下に平板状のカーボン・ヒータ顛を配し、またこ
の基板（５）の上には棒状のカーボン・ヒータ（１１）
を配して、基板（５）を高温に加熱しながらカーボン・
ヒータ（ｔｌ）を移動して多結晶シリコン膜（力を結晶
化させるものである。BACKGROUND TECHNOLOGY AND PROBLEMS A silicon crystal thin film is made and a silicon semiconductor device is manufactured using this crystal thin film. For this reason, at present, so-called 80I (Sil 1conon In5
ulator) is being developed, and its manufacturing methods include, for example, a crystallization method using an Ar or CO2 laser, a crystallization method using an electron beam, and a crystallization method using a carbon heater. In the crystallization method using an Ar or CO2 laser and the crystallization method using an electron beam, an insulating layer is formed on a substrate (1) made of glass or silicon crystal, as shown in the perspective view of Fig. 1 and the cross-sectional view of Fig. 2. 8102 layer as (
2), further provide a polycrystalline silicon film (3) thereon, and irradiate and scan the surface of this polycrystalline silicon film (3) with a laser or an electron beam B.
The polycrystalline silicon film (3) is crystallized while heating the substrate (1) to a relatively low temperature. Also, carbon
In the crystallization method using a heater, as shown in the perspective view of FIG. 3 and the cross-sectional view of FIG.
2 layers (6) and 813N4 layers (8) were deposited in sequence, and the base [(
A flat carbon heater frame is arranged below the substrate (5), and a rod-shaped carbon heater (11) is placed on top of this substrate (5).
and heat the substrate (5) to a high temperature while heating the carbon.
The heater (tl) is moved to crystallize the polycrystalline silicon film (force).

本発明は、上記３種類の半導体結晶膜の製造方法のうち
、レーザ。ビームの使用に係るものであるが、従来のレ
ーザ・ビーム法によって得られた結晶膜は、１０μ×数
μ以下の微結晶の集合体であり、それ以上に大きな結晶
をもつ半導体結晶膜を製造することが困難であった。The present invention relates to a laser method among the above three types of semiconductor crystal film manufacturing methods. Regarding the use of a beam, the crystal film obtained by the conventional laser beam method is an aggregate of microcrystals of 10μ x several micrometers or less, and it is not possible to manufacture semiconductor crystal films with larger crystals. It was difficult to do so.

発明の目的 本発明は、上述の点に鑑み、従来のレーザ・ビーム法に
よる場合よりも大きな結晶を形成することができる、レ
ーザ・ビームを使用した半導体結晶膜の製造方法を提供
するものである。Purpose of the Invention In view of the above-mentioned points, the present invention provides a method for manufacturing a semiconductor crystal film using a laser beam, which can form a larger crystal than in the conventional laser beam method. .

発明の概要 本発明は、基板上の多結晶シリコン膜にレーザ・ビーム
を照射して多結晶シリコン膜を結晶化させる半導体結晶
膜の製造方法において、レーザ・ビームを２つに分割し
、且つこの２つのレーザ・ビームを一部重ならせて双峰
性エネルギー密度分布を形成するレーザ・ビームとした
ことを特徴とする半導体結晶膜の製造方法である。Summary of the Invention The present invention provides a method for manufacturing a semiconductor crystal film in which a polycrystalline silicon film on a substrate is irradiated with a laser beam to crystallize the polycrystalline silicon film. This is a method for manufacturing a semiconductor crystal film, characterized in that two laser beams are partially overlapped to form a laser beam that forms a bimodal energy density distribution.

このようにして半導体結晶膜を製造することにより、従
来のレーザ・ビームを使用する方法と比較して、大きく
結晶化された半導体結晶膜を製造することが可能になる
。By manufacturing a semiconductor crystal film in this manner, it is possible to manufacture a semiconductor crystal film that is highly crystallized compared to a conventional method using a laser beam.

実施例 第５〜８図を参照して、本発明の詳細な説明する。Example The present invention will be described in detail with reference to FIGS. 5 to 8.

本発明においては、第５図に示すように１つのレーザ９
ビームを分割して２つのレーザ拳ビームＩｈ及ヒＢ２を
作り、この２つのレーザゆビームＢ１及びＢ２のスポッ
ト（ハ）及び同を互に一部重ね合せて双峰性エネルギー
密度分布（至）を有するレーザ・ビームＢ３を形成する
。即ち、各レーザ・ビームＢｌ、Ｂ２は夫々ガウス型エ
ネルギー密度分布をもつが、２つのレーザ・ビームＢ１
．Ｂｚを一部重ね合せることによって双峰性エネルギー
１８１度分布（至）となる。In the present invention, one laser 9 is used as shown in FIG.
The beam is split to create two laser beams Ih and B2, and the spots (c) of these two laser beams B1 and B2 are partially overlapped with each other to create a bimodal energy density distribution (to). A laser beam B3 is formed having the following values. That is, each of the laser beams Bl and B2 has a Gaussian energy density distribution, but the two laser beams B1 and B2 each have a Gaussian energy density distribution.
．． By partially overlapping Bz, a bimodal energy distribution of 181 degrees (total) is obtained.

そして、このレーザ・ビームＢ３を第６図に示すように
１例えば前述したようなガラスまたはシリコン結晶の基
板（１）上に５ｉ０２層（２）を介して被着した多結晶
シリコン膜（３）（第６図参照）上に照射し、矢印Ｍ方
向に走査してこの多結晶シリコン膜（３）を単結晶化す
る。なお、この場合においても基板（１）は比較的低温
に加熱する。第６図１は結晶化状態を示すものであり、
レーザ・ビームＢ３を多結晶シリコン膜（３）上に走査
させると、多結晶シリコン膜（３）は、その双峰性エネ
ルギーの密度分布に従って結晶化され、多結晶シリコン
領域　Ｃ３１１と単結晶シリコン領域（３２１が形成さ
れる。即ち、このレーザ・ビームＢ３が走査された多結
晶シリコン膜（３）は、熱エネルギーによって溶融され
るが、レーザ・ビームＢ３が走査された後の多結晶シリ
コン膜（３）は、双峰性エネルギーに対応して、溶融域
Ｇ３１と再結晶領域との境界線０４１も双峰状となり、
この双峰状溶融域（至）の中央から後方部分には単結晶
シリコン領域（３４が形成され、そして双峰状溶融域關
の頂点を境とした再結晶領域の両側部分には多結晶シリ
コン領域Ｇυが形成される。なお、このレーザ・ビーム
Ｂ３の走査の方式は、レーザ・ビームＢ３自体を走査さ
せてもよく、また逆にレーザ・・ビームＢ３自体は定位
置に照射させたままで、多結晶シリコン膜（３）を形成
した基板（１）の方を走査させるようにしてもよい。Then, as shown in FIG. 6, this laser beam B3 is applied to a polycrystalline silicon film (3) deposited on a glass or silicon crystal substrate (1) as described above via a 5i02 layer (2). (See FIG. 6) The polycrystalline silicon film (3) is made into a single crystal by irradiating it onto the surface and scanning in the direction of arrow M. Note that in this case as well, the substrate (1) is heated to a relatively low temperature. FIG. 6 1 shows the crystallization state,
When the laser beam B3 is scanned over the polycrystalline silicon film (3), the polycrystalline silicon film (3) is crystallized according to its bimodal energy density distribution, forming a polycrystalline silicon region C311 and a single crystal silicon region. (321 is formed. That is, the polycrystalline silicon film (3) scanned by this laser beam B3 is melted by thermal energy, but the polycrystalline silicon film (3) scanned by the laser beam B3 is 3) corresponds to the bimodal energy, and the boundary line 041 between the melting region G31 and the recrystallization region also becomes bimodal,
A single crystal silicon region (34) is formed from the center to the rear of this bimodal melting region, and polycrystalline silicon is formed on both sides of the recrystallized region bordering the apex of the bimodal melting region. A region Gυ is formed.The scanning method of this laser beam B3 may be such that the laser beam B3 itself is scanned, or conversely, the laser beam B3 itself may remain irradiated at a fixed position. The substrate (1) on which the polycrystalline silicon film (3) is formed may be scanned.

次に、１つのレーザ・ビームを２つのレーザ・ビームに
分割するレーザ装置の具体例について述べる。第７図は
その一実施例である。第７図の場合は、例えばＡｒのレ
ーザ・ビームを発生させるレーザ・ビーム発生器（２υ
と、これからのレーザ・ビームＢｏを一旦収束させる凸
レンズのと、レーザ・ビームＢｏを実質的に２分割する
レンズ系■とを有して成る。レンズ系■は、凸レンズ（
至）と、これから若干離れた位置に設けた一部にプリズ
ムを形成した平版状透明板のによって形成する。即ち、
この透明版のは、側面からみてレンズ元軸Ｃを境に下側
の入射面と射出面を平行面にした平行平板部（２３ａ）
と、上側のレーザ・ビームＢＯの入射面を角度０で斜状
に切欠したプリズム（２３ｂ）とを有して構成する。こ
のレーザ装置によれば、し−ザ・ビーム発生器（２Ｉ）
から照射された１本のレーザ・ビームＢｏは、凸レンズ
ににて一旦収束させられて後、拡散してレンズ系例の平
板状透明扱いを透過し、さらに凸レンズ（ロ）を透過し
て収束する。Next, a specific example of a laser device that splits one laser beam into two laser beams will be described. FIG. 7 shows an example of this. In the case of Fig. 7, a laser beam generator (2υ
, a convex lens that once converges the upcoming laser beam Bo, and a lens system (2) that substantially divides the laser beam Bo into two. Lens system ■ is a convex lens (
) and a flat plate-like transparent plate with a prism formed on a part located at a position slightly away from the plate. That is,
This transparent version has a parallel flat plate part (23a) with the lower entrance surface and exit surface parallel to each other with the lens original axis C as the boundary.
and a prism (23b) whose upper incident surface of the laser beam BO is obliquely cut out at an angle of 0. According to this laser device, laser beam generator (2I)
A single laser beam Bo irradiated from is once converged by a convex lens, then diffused and transmitted through a flat transparent lens system example, and then transmitted through a convex lens (b) and converged. .

このとき、レンズ系例において平板状透明板ムの下側の
平行平板部（２３ａ）を透過したレーザ・ビームＢｏの
一部はレンズ光軸Ｃ上の点ＰＩに焦点を結び、上側のプ
リズム（２３ｂ）を透過したレーザ・ビームＢＯの他部
は点Ｐｌより離れた点Ｐ２に焦点を結ぶ。この結果レー
ザ・ビーム発生器（２１）からの１本のレーザ・ビーム
ＢＯが２つのレーザ・ビームＢｌ、Ｂ２に分割される。At this time, in the example lens system, a part of the laser beam Bo transmitted through the parallel flat plate part (23a) on the lower side of the flat transparent plate is focused on a point PI on the optical axis C of the lens, and the laser beam Bo on the upper side prism ( The other part of the laser beam BO that has passed through 23b) focuses on a point P2 that is distant from the point Pl. As a result, one laser beam BO from the laser beam generator (21) is split into two laser beams B1 and B2.

従って、この２つのレーザ中ビームＢｌ、Ｂ２のスボツ
）　（２６）　、　（２７）の一部分が相貫なるように
両レーザビームＢ１とＢ２間の距離２を選ぶことによっ
て全体のレーザ・ビームＢａの照射エネルギーの密度分
布、即ち双峰性エネルギー密度分布を自由に変えること
ができる。Therefore, by selecting the distance 2 between the two laser beams B1 and B2 so that the parts of these two laser beams Bl and B2 (26) and (27) are consistent, the entire laser beam Ba can be adjusted. The density distribution of irradiation energy, that is, the bimodal energy density distribution, can be changed freely.

第７図に於て、最初の凸レンズ（２りの焦点（ハ）と第
２の凸レンズＣ４との距離なａ１透明板（ハ）のブリズ
Ａ　（２３ｂ）での傾斜角をθ、第２の凸レンズ（２）
の焦点距離をｆ１透明板恭の屈折率をｎとすると、両レ
ーザ・ビームＢ１及びＢ２の中心間の距離思は、次式で
表わされる。In Fig. 7, the distance between the first convex lens (two focal points (c) and the second convex lens C4, the angle of inclination of the transparent plate (c) at bris A (23b), θ, the second Convex lens (2)
When the focal length of f1 and the refractive index of the transparent plate are n, the distance between the centers of both laser beams B1 and B2 is expressed by the following equation.

ｆ 忍″＝ｉ　（ｒｌ−１）（丁ゴ→θ　（θ（ｌの場合）
従って、この式から距Ｒ２を自由に設定できる。f Shinobu''=i (rl-1) (Dingo → θ (θ (in case of l)
Therefore, the distance R2 can be freely set from this formula.

第８図は、本発明で適用されるレーザ装置の第２の実施
例である。このレーザ装置は、レーザ・ビーム発生器（
２１）とこれよりのレーザ・ビームＢＯの径を例えば５
０倍に拡大するエキスパンダ（ハ）と側面から見て上側
と同様に上半分がプリズムとなるように斜状に切欠され
た平板状透明板間と縦割りにされた凸レンズの半分Ｇ３
７）を接合したレンズ系（至）とから成る。FIG. 8 shows a second embodiment of a laser device to which the present invention is applied. This laser device consists of a laser beam generator (
21) and the diameter of the laser beam BO from this, for example, 5
An expander that magnifies 0 times (C), a flat transparent plate cut out diagonally so that the upper half becomes a prism when viewed from the side, and a half G3 of a convex lens divided vertically.
7) and a lens system (to) cemented together.

とのレーザ装置ではレーザ・ビーム発生器（２１）から
のレーザ・ビーム１３ｏがエキスパンダ命によってその
径が拡大されて平行光線でレンズ系例に入射され、透明
＆（ト）の下半分を透過するレーザ・ビームＢＯの一部
がレンズ光軸Ｃ上の点Ｐ１に焦点な結び、上半分のプリ
ズムを透過するレーザ・ビームＢｏの他部が点Ｐ１より
離れた点Ｐ２に焦点を結ぶ。この結果、レーザ・ビーム
Ｂｏは、２つのレーザ・ビームＢ１及びＢ２に分割され
、そのレーザスボツ）　（２６）、（２７）を一部分型
ならせるように距離２を選ぶことにより、上側と同様に
双峰性エネルギー密度分布を有するレーザ・ビームＢｓ
カ得られる。In the laser device, the diameter of the laser beam 13o from the laser beam generator (21) is expanded by the expander command, and it enters the lens system as a parallel ray, passing through the lower half of the transparent & (g). A part of the laser beam BO is focused at a point P1 on the optical axis C of the lens, and the other part of the laser beam Bo, which passes through the upper half of the prism, is focused at a point P2 distant from the point P1. As a result, the laser beam Bo is split into two laser beams B1 and B2, and by choosing the distance 2 so that the laser beams (26) and (27) are partially shaped, the laser beams Bo are split into two laser beams B1 and B2, and the laser beams (26) and (27) are split into two parts, similar to the upper part. Laser beam Bs with peaked energy density distribution
You can get it.

第８図において、両レーザ・ビームＢｌ及びＢ２の中心
間の距離尼は、透明板（３６）のプリズムでの傾側角を
θ′、透明板（至）の屈折率をｎ′、半分の凸レンズ（
至）の焦点距離をｆ′とすると、次式で表わされる。In Fig. 8, the distance between the centers of both laser beams Bl and B2 is determined by θ', the angle of inclination of the transparent plate (36) at the prism, n', the refractive index of the transparent plate (to), and the half convex lens. (
Let f' be the focal length of

Ｑ吻（ｎ’−１）　ｆ’θ′　　（θ′（１の場合）こ
れらのレーザ装置で得られたレーザ・ビームＢｌ、Ｂ２
を多結晶シリコン膜（３）上に走査させることにより、
上述のように、双峰状に形成−されたエネルギー密度分
布に従って、被走査領域に第６図に示すような単結晶シ
リコン領域ｃ３秒及び再結晶した多結晶シリコン領域０
１）を生成させることができる。Q proboscis (n'-1) f'θ' (when θ' (1)) Laser beams Bl, B2 obtained with these laser devices
By scanning on the polycrystalline silicon film (3),
As described above, according to the bimodal energy density distribution, the single crystal silicon region c3 and the recrystallized polycrystal silicon region 0 are formed in the scanned region as shown in FIG.
1) can be generated.

上述の本発明に係る２分割レーザ・ビームＢｌ。The two-split laser beam Bl according to the invention described above.

Ｂ２からの合成レーザ・ビームＢ３を多結晶シリコン膜
（３１Ｋ照射すること忙より得られた単結晶シリコン曽
は、数１０μ×数１００μ以上の大きさのものである。The single crystal silicon film obtained by irradiating a polycrystalline silicon film (31K) with the combined laser beam B3 from B2 has a size of several tens of microns by several hundred microns or more.

また、本発明によるレーザ・ビームＢｌ。Also, a laser beam Bl according to the invention.

Ｂ２を使用すれば、２つのレーザ・スポット（イ）、＠
の部分約１なりによって形成される双峰性エネルギーの
密度分布を自由に変えることができるので、最良の条件
の下でシリコン結晶膜を作製することが容易である。If you use B2, two laser spots (a), @
Since the density distribution of the bimodal energy formed by the portion of about 1 can be freely changed, it is easy to produce a silicon crystal film under the best conditions.

発明の効果 上述した本発明の半導体結晶膜の層迄方法によれば、１
つのレーザ・ビームから２分割した各レーザ・・ビーム
を一部が重なるようにして双峰性エネルギー密度分布を
有するレーザ・ビームを利用することにより、従来の製
造方法による場合と比較して、大きく結晶化された良好
なシリコン膜を作製することができる。しかも、２つの
レーザ・ビームの重なり等の条件を制御することにより
その双峰性エネルギー密度分布を自由に変えられるので
、最良の製造条件を設定するためのレーザ・ビームの制
御が容易となる。Effects of the Invention According to the method for forming layers of a semiconductor crystal film of the present invention described above, 1.
By using a laser beam that has a bimodal energy density distribution by splitting each laser beam into two and partially overlapping each other, it is possible to significantly increase the A good crystallized silicon film can be produced. Furthermore, by controlling conditions such as the overlap of the two laser beams, the bimodal energy density distribution can be freely changed, making it easy to control the laser beams to set the best manufacturing conditions.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図〜第４図は従来の製造方法の説明に供する斜視図
及び断面図、第５図は本発明の半導体結晶膜の製造方法
に適用するレーザ・ビーム及びその双峰性エネルギー密
度分布を示す図、第６図はレーザ・ビーム照射後の結晶
化状態を示す模式図、第７図及び第８図は本発明の説明
に供する実施例の概略図である。 （１）は基鈑、（３）は多結晶シリコン膜、（２６）　
、　（２力はレーザ・スポット、（ハ）は双峰性エネル
ギー密度分布、ｒ３υは多結晶シリコン領域、ｃ１２は
単結晶シリコン領域、Ｂｏはレーザ・ビーム、Ｂｌ、Ｂ
２は夫々分割後のレーザ・ビームである。 第１囚　　　　　　第２図 第３図 第６図 手続補正書　　　（１） 昭和５８年２月２５日 １、事件の表示 昭和５７年特許願第２２４７３２　　号２、発明の名称
　　半導体結晶膜の製造方法３、補正をする者 事件との関係　　　特許出願人　　　　　　　　（３）
住所　東京部品用区北品用６丁目７番３５号６、補正に
より増加する発明の数 明細書中、第７頁２０行「凸し・ンズ（２）との距離を
８１」を［凸レンズ（財）及び平板状透明板（ハ）の中
心までの距離を夫々ａ及びｘｓＪと補正する。 同、第８頁５．６行 と補正する。 同、第８頁１１行及び１７行「エキスノくンダ０９」以
上1 to 4 are perspective views and cross-sectional views for explaining the conventional manufacturing method, and FIG. 5 shows a laser beam and its bimodal energy density distribution applied to the method of manufacturing a semiconductor crystal film of the present invention. FIG. 6 is a schematic diagram showing a crystallized state after laser beam irradiation, and FIGS. 7 and 8 are schematic diagrams of an embodiment for explaining the present invention. (1) is the base plate, (3) is the polycrystalline silicon film, (26)
, (2 force is the laser spot, (c) is the bimodal energy density distribution, r3υ is the polycrystalline silicon region, c12 is the single crystal silicon region, Bo is the laser beam, Bl, B
2 are laser beams after the respective divisions. 1st Prisoner Figure 2 Figure 6 Figure 6 Procedural Amendment (1) February 25, 1981 1. Indication of the case 1988 Patent Application No. 224732 2. Title of the invention Method for manufacturing semiconductor crystal film 3 , Relationship with the case of the person making the amendment Patent applicant (3)
Address: 6-7-35, Kitashinyo, Tokyo Parts Co., Ltd. Number of inventions increased due to amendment In the specification, page 7, line 20, "distance to convex lens (2) is 81" [convex lens ( Correct the distances to the centers of the flat transparent plate (c) and the center of the flat transparent plate (c) to a and xsJ, respectively. Same, page 8, line 5.6. Same, page 8, lines 11 and 17 “Exno Kunda 09” and above

Claims (1)

【特許請求の範囲】[Claims] 基板上の多結晶シリコン膜にレーザー・・ビームを照射
して該多結晶シリコン膜を結晶化させる半導体結晶膜の
製造方法において、上記レーザ・ビームを２つに分割し
、且つ該２つのレーザ・ビームを一部重ならせて双峰性
エネルギー密度分布を形成するレーザ・ビームとしたこ
とを特徴とする半導体結晶膜の製造方法。In a method of manufacturing a semiconductor crystal film in which a polycrystalline silicon film on a substrate is irradiated with a laser beam to crystallize the polycrystalline silicon film, the laser beam is divided into two, and the two laser beams are A method for manufacturing a semiconductor crystal film, characterized in that the laser beams are partially overlapped to form a bimodal energy density distribution.
JP57224732A 1982-12-21 1982-12-21 Manufacture of semiconductor crystal film Pending JPS59114815A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57224732A JPS59114815A (en) 1982-12-21 1982-12-21 Manufacture of semiconductor crystal film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57224732A JPS59114815A (en) 1982-12-21 1982-12-21 Manufacture of semiconductor crystal film

Publications (1)

Publication Number Publication Date
JPS59114815A true JPS59114815A (en) 1984-07-03

Family

ID=16818371

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57224732A Pending JPS59114815A (en) 1982-12-21 1982-12-21 Manufacture of semiconductor crystal film

Country Status (1)

Country Link
JP (1) JPS59114815A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6266617A (en) * 1985-09-19 1987-03-26 Agency Of Ind Science & Technol Laser light emitting device
JPH01246819A (en) * 1988-03-28 1989-10-02 Tokyo Electron Ltd Beam annealing

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6266617A (en) * 1985-09-19 1987-03-26 Agency Of Ind Science & Technol Laser light emitting device
JPH01246819A (en) * 1988-03-28 1989-10-02 Tokyo Electron Ltd Beam annealing

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