JPS59113592A - 半導体メモリ - Google Patents
半導体メモリInfo
- Publication number
- JPS59113592A JPS59113592A JP57224656A JP22465682A JPS59113592A JP S59113592 A JPS59113592 A JP S59113592A JP 57224656 A JP57224656 A JP 57224656A JP 22465682 A JP22465682 A JP 22465682A JP S59113592 A JPS59113592 A JP S59113592A
- Authority
- JP
- Japan
- Prior art keywords
- output
- signal
- buffer
- level
- logic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 239000000872 buffer Substances 0.000 claims abstract description 50
- 230000015654 memory Effects 0.000 claims description 12
- 230000003321 amplification Effects 0.000 claims description 7
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 7
- 230000007257 malfunction Effects 0.000 abstract description 5
- 238000001514 detection method Methods 0.000 abstract description 2
- 238000004904 shortening Methods 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 3
- 230000003111 delayed effect Effects 0.000 description 3
- 230000002411 adverse Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- RYMZZMVNJRMUDD-HGQWONQESA-N simvastatin Chemical compound C([C@H]1[C@@H](C)C=CC2=C[C@H](C)C[C@@H]([C@H]12)OC(=O)C(C)(C)CC)C[C@@H]1C[C@@H](O)CC(=O)O1 RYMZZMVNJRMUDD-HGQWONQESA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57224656A JPS59113592A (ja) | 1982-12-21 | 1982-12-21 | 半導体メモリ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57224656A JPS59113592A (ja) | 1982-12-21 | 1982-12-21 | 半導体メモリ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59113592A true JPS59113592A (ja) | 1984-06-30 |
JPH03718B2 JPH03718B2 (enrdf_load_stackoverflow) | 1991-01-08 |
Family
ID=16817138
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57224656A Granted JPS59113592A (ja) | 1982-12-21 | 1982-12-21 | 半導体メモリ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59113592A (enrdf_load_stackoverflow) |
-
1982
- 1982-12-21 JP JP57224656A patent/JPS59113592A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH03718B2 (enrdf_load_stackoverflow) | 1991-01-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2557411B2 (ja) | 半導体集積回路 | |
EP0639000B1 (en) | Flip-flop type amplifier circuit | |
JPH0714386A (ja) | 半導体集積回路のデータ出力バッファ | |
EP0166540A2 (en) | A semiconductor memory device | |
US20020011876A1 (en) | Current sense amplifiers enabling amplification of bit line voltages provided by bit line sense amplifiers | |
KR100284985B1 (ko) | 인에이블제어회로를갖춘집적회로 | |
EP0750310B1 (en) | High speed differential current sense amplifier with positive feedback | |
US5517142A (en) | Output buffer with a reduced transient bouncing phenomenon | |
US20040105317A1 (en) | Slew rate controlling method and system for output data | |
US5038056A (en) | Output circuit | |
EP0058051A2 (en) | Static type semiconductor memory device | |
JP3805802B2 (ja) | 半導体メモリ装置のデータ出力回路 | |
KR0147712B1 (ko) | 에스램의 저전압 동작용 비트 라인 회로 | |
US4907189A (en) | Cache tag comparator with read mode and compare mode | |
JPS59113592A (ja) | 半導体メモリ | |
JPH03717B2 (enrdf_load_stackoverflow) | ||
EP0320779A2 (en) | Sense amplifier | |
JPH0423359B2 (enrdf_load_stackoverflow) | ||
JPH02154393A (ja) | 半導体記憶回路 | |
US5565802A (en) | Semiconductor device with differential amplifier operable at high speed | |
US5901097A (en) | Read bus controlling apparatus for semiconductor storage device | |
US6625066B1 (en) | Data path decoding technique for an embedded memory array | |
JPS5819791A (ja) | 半導体記憶装置 | |
JP3639050B2 (ja) | 入力回路及び半導体装置 | |
JP2659794B2 (ja) | データ出力回路 |