JPS59113358U - Single crystal growth equipment - Google Patents
Single crystal growth equipmentInfo
- Publication number
- JPS59113358U JPS59113358U JP330583U JP330583U JPS59113358U JP S59113358 U JPS59113358 U JP S59113358U JP 330583 U JP330583 U JP 330583U JP 330583 U JP330583 U JP 330583U JP S59113358 U JPS59113358 U JP S59113358U
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crystal growth
- growth equipment
- growth device
- capsule
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は本考案の単結晶育成装置の一実施の態様を示す
概略断面図、第２図は種結晶を強制冷却した場合Ａとし
ない場合Ｂの育成結晶中の径方向の温度分布の一例を示
すグラフ、そして第３図は、種結晶を強制冷却した場合
Ｃとしない場合りの育成結晶中の径方向の転位密度分布
を示すグラフである。
１ニルツボ、２：融液、３：不活性のカプセル剤、４：
育成結晶、５：種結晶、６：ヒートパイプ、７：冷却装
置と制御装置。FIG. 1 is a schematic cross-sectional view showing an embodiment of the single crystal growth apparatus of the present invention, and FIG. 2 is an example of the radial temperature distribution in the grown crystal in cases A when the seed crystal is forcedly cooled and cases B when the seed crystal is not forcedly cooled. and FIG. 3 is a graph showing the dislocation density distribution in the radial direction in the grown crystal when the seed crystal is forcedly cooled and when it is not. 1 Nil acupuncture point, 2: Melt, 3: Inert capsule, 4:
Growing crystal, 5: Seed crystal, 6: Heat pipe, 7: Cooling device and control device.
Claims (1)
セル剤層を通して高圧雰囲気下で単結晶を引上げるよう
にした単結晶育成装置において、′ 種結晶を保持す
る部分にヒートパイプを設置したことを特徴とする単結
晶育成装置。In a single crystal growth device that covers the melt in the crucible with an inert capsule and pulls the single crystal through this capsule layer in a high-pressure atmosphere, a heat pipe was installed in the part that holds the seed crystal. A single crystal growth device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP330583U JPS59113358U (en) | 1983-01-17 | 1983-01-17 | Single crystal growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP330583U JPS59113358U (en) | 1983-01-17 | 1983-01-17 | Single crystal growth equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59113358U true JPS59113358U (en) | 1984-07-31 |
Family
ID=30134925
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP330583U Pending JPS59113358U (en) | 1983-01-17 | 1983-01-17 | Single crystal growth equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59113358U (en) |
-
1983
- 1983-01-17 JP JP330583U patent/JPS59113358U/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS59113358U (en) | Single crystal growth equipment | |
| JPS6143275U (en) | crystal growth equipment | |
| JPS57205397A (en) | Method and apparatus for growing single crystal | |
| EP0135676A3 (en) | Apparatus for growing czochralski crystals and growth method using such apparatus | |
| JPS538374A (en) | Growing method for single crystal of semiconductor | |
| JPS6127976Y2 (en) | ||
| JPS55158196A (en) | Manufacture of single crystal | |
| JPS5361577A (en) | Growing method for horizontally pulled ribbon crystal | |
| JPS6071674U (en) | Vapor phase growth equipment | |
| JPS6124472U (en) | Sublimation crystal growth equipment | |
| JPS6010197U (en) | Crucible for single crystal growth | |
| JPS57170890A (en) | Growing method for single crystal | |
| JPS60373U (en) | Single crystal pulling device | |
| JPS60127361U (en) | Raw material introduction equipment | |
| JPS6086566U (en) | Seed crystal support with heat reflector | |
| JPS62216995A (en) | Device for growing compound semiconductor single crystal | |
| JPH0449185Y2 (en) | ||
| JPS604573U (en) | Crystal pulling device | |
| JP2706272B2 (en) | Compound semiconductor single crystal growth method | |
| JPS62187193A (en) | Method and device for growing single crystal | |
| JPS59103770U (en) | Thin film vapor phase growth equipment | |
| JPS63185885A (en) | Crystal growing device of horizontal type | |
| JPS57175796A (en) | Liquid phase epitaxial growth | |
| JPS52155189A (en) | Multiple layer crystal growth | |
| RU96113653A (en) | METHOD FOR PRODUCING (GROWING) SEMICONDUCTOR CRYSTALS FROM MELT BASED ON A4B6 COMPOUNDS (DECOMPOSABLE COMPOUNDS) |