JPS59111329A - Manufacture of coated thin-film - Google Patents
Manufacture of coated thin-filmInfo
- Publication number
- JPS59111329A JPS59111329A JP22116782A JP22116782A JPS59111329A JP S59111329 A JPS59111329 A JP S59111329A JP 22116782 A JP22116782 A JP 22116782A JP 22116782 A JP22116782 A JP 22116782A JP S59111329 A JPS59111329 A JP S59111329A
- Authority
- JP
- Japan
- Prior art keywords
- film
- thin film
- thickness
- film thickness
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000010408 film Substances 0.000 claims abstract description 47
- 238000000034 method Methods 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims abstract description 11
- 239000002356 single layer Substances 0.000 claims abstract 5
- 239000010410 layer Substances 0.000 claims abstract 3
- 238000000151 deposition Methods 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 230000000694 effects Effects 0.000 abstract description 10
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 8
- 238000009413 insulation Methods 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 230000001143 conditioned effect Effects 0.000 abstract 1
- 230000003750 conditioning effect Effects 0.000 abstract 1
- 239000012299 nitrogen atmosphere Substances 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 description 3
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0209—Pretreatment of the material to be coated by heating
- C23C16/0218—Pretreatment of the material to be coated by heating in a reactive atmosphere
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
【発明の詳細な説明】
この発明は、固体装置製造の歩留り向上及び固体装置の
信頼性向上に必要な基板表面被着保護膜又は絶縁膜の製
造方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a protective film or an insulating film deposited on a substrate surface, which is necessary for improving the yield of manufacturing solid-state devices and improving the reliability of solid-state devices.
この種の技術としては、化学的気相成長法（以下ＣＶＤ
法と記す）、スパッタ法、蒸着法等による酸化膜、窒化
膜、アルミナ膜あるい、は各種シリケートガラス等の被
着技術が知れているが、いずれの方法、膜種にしても、
基板に対する保護又は絶縁の効果を上げるためには、膜
厚を大きくする必要がある。しかし、基板と被着膜との
熱膨張係数の差（例えばシリコン基板と酸化膜とでは膨
張係数が約１桁異る）により、膜種に固有の厚み以上の
膜では、加熱工程中に膜の全面もしくは一部にクランク
か発生する。一旦クラックが発生すれば、被着膜の保護
又は絶縁の効果は減殺され、膜厚を大きくしたことが逆
の効果を生じる結果になってしまうという欠点がある。This type of technology includes chemical vapor deposition (CVD)
There are known techniques for depositing oxide films, nitride films, alumina films, various types of silicate glasses, etc. by sputtering, vapor deposition, etc.;
In order to increase the effect of protection or insulation on the substrate, it is necessary to increase the film thickness. However, due to the difference in the coefficient of thermal expansion between the substrate and the deposited film (for example, the coefficient of expansion differs by about one order of magnitude between a silicon substrate and an oxide film), if the film has a thickness that exceeds that specific to the film type, the film may not be deposited during the heating process. Crank occurs on all or part of the area. Once cracks occur, the protective or insulating effect of the deposited film is diminished, and increasing the film thickness has the drawback of producing the opposite effect.
この発明は、上述の欠点を除去し、基板表面に薄膜を被
着するに際して、保護又は絶縁の効果を上げるために膜
厚を太き（しつつクランクの発生を抑える方法を提供す
ることを目的とする。The purpose of this invention is to eliminate the above-mentioned drawbacks and to provide a method for increasing the thickness of a thin film to increase the protection or insulation effect (while suppressing the occurrence of cranking) when depositing a thin film on the surface of a substrate. shall be.
第１図はこの発明の実施例を示すもので、シリコン基板
ｌ上に０．８μｍ以上、１．６μｍ以下の酸化膜をＣＶ
Ｄ法で被着する方法を示す。シリコン基板上に酸化膜Ｃ
ＶＤ法で被着する場合、酸化膜単層の厚みが０．８μｍ
を越えると酸化膜中にクランクが発生する。従って０．
８μｍ以上の酸化膜を無クラツクで得るには以下の工程
が１例として考えられろ。FIG. 1 shows an embodiment of the present invention, in which an oxide film of 0.8 μm or more and 1.6 μm or less is formed on a silicon substrate by CVD.
A method of deposition using method D is shown. Oxide film C on silicon substrate
When deposited by VD method, the thickness of the single oxide film is 0.8 μm.
If the value exceeds this value, cranks will occur in the oxide film. Therefore 0.
The following process can be considered as an example of how to obtain an oxide film of 8 μm or more without cracking.
１）シリコン基板１に前処理を施こした後、ＣＶＤ法の
所定の手順条件に従って０．８μｍの酸化膜２をシリコ
ン基板上に被着する。1) After performing pretreatment on the silicon substrate 1, an oxide film 2 of 0.8 μm is deposited on the silicon substrate according to predetermined procedure conditions of the CVD method.
２）酸化膜２の緻密化のために温度９００〜１０００°
Ω蟹素界囲気中で７ニールを３０分間行う。2) Temperature 900 to 1000° for densification of oxide film 2
7 cycles are performed for 30 minutes in an Ω crab atmosphere.
３）前処理後、ＣＶＤ法の所定の手順２条件に従って不
足分の膜厚の酸化膜３を被着する。3) After the pretreatment, an oxide film 3 with the insufficient thickness is deposited according to the predetermined procedure 2 conditions of the CVD method.
４）上述と同様のアニールを行う。4) Perform the same annealing as above.
１．６μｍ以上の膜厚の場合は同様の工程に従って０．
８μｍ以下の酸化膜の３Ｎ以上の積層構造とする。If the film thickness is 1.6 μm or more, follow the same process.
It has a laminated structure of 3N or more of oxide film of 8 μm or less.
第２図は第１図の実施例の変形例を示すもので、第１図
と異る点は第１図と同厚の膜を得るのに、０．８μｍ以
下の酸化膜を３層２１，２２．２３重ねる方法をとるこ
とである。この結果、更にクランク発生数の少い酸化膜
を得ることができる。Fig. 2 shows a modification of the embodiment shown in Fig. 1, and the difference from Fig. 1 is that to obtain a film of the same thickness as Fig. , 22.23. As a result, an oxide film with fewer cranks can be obtained.
第３図は、第１図の実施例の別の変形例を示すもので、
第１図と異る点は、第１図の酸化膜３の代りに１．５μ
ｍ以下のリンガラス３１を被着することである。この結
果、第１実施例に示す効果の他に、リンガラスか塑性に
富むためにクランクが極めて入りにくい点と、リンガラ
スのパッシベーション効果及びゲッタリング効果を利用
することができる。又第３図に於いて、リンガラス３１
の代りに１．０μｍ以下の窒化膜を被着した場合は、窒
化膜の強いパッシベーション効果を利用できる。FIG. 3 shows another modification of the embodiment shown in FIG.
The difference from Figure 1 is that the oxide film 3 in Figure 1 is replaced by a 1.5μ
The method is to deposit phosphor glass 31 with a thickness of m or less. As a result, in addition to the effects shown in the first embodiment, it is possible to utilize the fact that the crank is extremely difficult to insert due to the high plasticity of phosphorus glass, and the passivation effect and gettering effect of phosphorus glass. In addition, in Figure 3, the ring glass 31
If a nitride film of 1.0 μm or less is deposited instead, the strong passivation effect of the nitride film can be utilized.
この発明は以上の例にとどまるものではな（、製造すべ
き装置及びその目的により、膜種、膜厚及びその組合せ
には、極めて多数例にわβつて考えることができる。The present invention is not limited to the above-mentioned examples; however, it is possible to consider a large number of examples of film types, film thicknesses, and combinations thereof depending on the equipment to be manufactured and its purpose.
この発明によれば、基板表面に薄膜な被着するに際して
、薄膜を複数の層に分は積層構造として被着するように
したために、
１）各層の膜厚をクランクの発生しない大きさに抑えら
れる。According to this invention, when a thin film is deposited on the surface of a substrate, the thin film is deposited in a laminated structure in multiple layers. It will be done.
２）たとえ発生しても隣接する層による遮断効果がある
ためクランクの影響を低減できり。2) Even if it occurs, the influence of the crank can be reduced because of the shielding effect of the adjacent layer.
３）種々の膜の特性を組合せて使用することができる。3) Characteristics of various membranes can be used in combination.
の利点が得られる。Benefits can be obtained.
この発明は、薄膜被着法として、上記説明したＣＶＤ法
に限らず、スパッタ法、蒸着法を用いる場合にも適用す
ることができる。更に、この発明は基板としてシリコン
に限定されるものではな（、各種基板に対して応用でき
ることは自明である。The present invention is applicable not only to the above-described CVD method but also to sputtering and vapor deposition methods as a thin film deposition method. Furthermore, this invention is not limited to silicon as a substrate (it is obvious that it can be applied to various types of substrates).
第１図ないし第３図本発明のそれぞれ異なる実施例を示
す断面図である。FIGS. 1 to 3 are cross-sectional views showing different embodiments of the present invention.
Claims (1)
、前記薄膜を前記基板上に単層で被着した場合に前記薄
膜中にクランクが発生し始める膜厚より薄い層から成る
積層構造に被着して、所望の膜厚を得ることを特徴とす
る被着薄膜の製造方法。 ２、特許請求の範囲第１項記載の方法に於いて、酸化シ
リコン膜を主体とする薄膜をシリコン基板上に被着する
に際しては、酸化シリコン膜単層の厚みｔｔＯ０８μｍ
以下とすることを特徴とする被着薄膜の製造方法。 ３）特許請求の範囲第１項記載の方法に於いて、リンガ
ラス膜を主体とする薄膜をシリコン基板上に被着するに
際しては、リンガラス膜単層の厚みｔｌ、５μｍ以下と
することを特徴とする被着薄膜の製造方法。 ４）％許請求の範囲第１項記載の方法に於いて、窒化シ
リコン膜を主体とする薄膜をシリコン基板上に被着する
に際しては、窒化シリコン膜単層の厚みをＩＤμｍ以下
とすることを特徴とする被着薄膜の製造方法。[Claims] 1) In a method of forming a thin film on a substrate by a deposition method, a film thickness at which cranks begin to occur in the thin film when the thin film is deposited as a single layer on the substrate. A method for producing a deposited thin film, the method comprising depositing the deposited thin film on a laminated structure consisting of thinner layers to obtain a desired film thickness. 2. In the method described in claim 1, when depositing a thin film mainly composed of a silicon oxide film on a silicon substrate, the thickness of the single layer of the silicon oxide film is ttO08 μm.
A method for producing an adhered thin film, characterized by the following: 3) In the method described in claim 1, when depositing a thin film mainly composed of phosphorus glass film on a silicon substrate, the thickness tl of the single layer of phosphorus glass film should be 5 μm or less. Features: A method for producing a deposited thin film. 4) % Allowance In the method described in claim 1, when depositing a thin film mainly composed of silicon nitride film on a silicon substrate, the thickness of the single layer of silicon nitride film should be equal to or less than IDμm. Features: A method for producing a deposited thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22116782A JPS59111329A (en) | 1982-12-17 | 1982-12-17 | Manufacture of coated thin-film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22116782A JPS59111329A (en) | 1982-12-17 | 1982-12-17 | Manufacture of coated thin-film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS59111329A true JPS59111329A (en) | 1984-06-27 |
Family
ID=16762517
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22116782A Pending JPS59111329A (en) | 1982-12-17 | 1982-12-17 | Manufacture of coated thin-film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59111329A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5693333A (en) * | 1979-11-02 | 1981-07-28 | Licentia Gmbh | Method of manufacturing insulating layer for covering one side surface of semiconductor |
| JPS5745931A (en) * | 1980-09-04 | 1982-03-16 | Fujitsu Ltd | Semiconductor device with multilayer passivation film and manufacture thereof |
-
1982
- 1982-12-17 JP JP22116782A patent/JPS59111329A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5693333A (en) * | 1979-11-02 | 1981-07-28 | Licentia Gmbh | Method of manufacturing insulating layer for covering one side surface of semiconductor |
| JPS5745931A (en) * | 1980-09-04 | 1982-03-16 | Fujitsu Ltd | Semiconductor device with multilayer passivation film and manufacture thereof |
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